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Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films / V. G. Myagkov [et al.] // J. Alloys Compd. - 2014. - Vol. 612. - P. 189-194, DOI 10.1016/j.jallcom.2014.05.176. - Cited References: 56 . - ISSN 0925-8388. - ISSN 1873-4669

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
HIGH-TEMPERATURE FERROMAGNETISM
   PHASE-FORMATION
   In2O
   OXIDE
   NANOPARTICLES
   CO
   SEMICONDUCTORS
   NANOCRYSTALS
   COMBUSTION
   SYSTEMS
Кл.слова (ненормированные):
Thermite reactions -- Reactive films -- Ferromagnetic nanocomposite films -- Transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Yu. L.; Volochaev, M. N.; Bondarenko, G. N.; Бондаренко, Галина Николаевна
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Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation / I. A. Tambasov [et al.] // Semicond. Sci. Technol. - 2014. - Vol. 29, Is. 8. - Ст. 82001, DOI 10.1088/0268-1242/29/8/082001. - Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
TRANSPARENT CONDUCTING OXIDES
   Ga-DOPED ZnO
   LOW-TEMPERATURE
   HIGH-PERFORMANCE
   SUBSTRATE-TEMPERATURE
   INSULATOR-TRANSITION
   ROOM-TEMPERATURE
   TRANSISTORS
   COMBUSTION
   PHOTOREDUCTION
Кл.слова (ненормированные):
indium oxide thin films -- autowave oxidation -- metal-semiconductor transition -- UV irradiation -- photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Eremin, E. V.; Еремин, Евгений Владимирович; Yozhikova, E. V.; Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
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Methane oxidation over A-site ordered and disordered Sr0.8Gd0.2CoO3−δ perovskites / S. N. Vereshchagin [et al.] // Chem. Commun. - 2014. - Vol. 50, Is. 46. - P. 6112-6115, DOI 10.1039/c4cc00913d. - Cited References: 20. - The authors acknowledge the financial support from SB RAS project N 38 (2012) and RFBR grant 13-02-00358. . - ISSN 1359-7345. - ISSN 1364-548X

РУБ Chemistry, Multidisciplinary
Рубрики:
MEMBRANE REACTORS
   OXYGEN
   OXIDES
   PERFORMANCE
   COMBUSTION
   FEATURES
   PHASES
Аннотация: A tetragonal phase Sr0.8Gd0.2CoO3−δ with ordered Gd3+/Sr2+ ions and oxygen vacancy sites is found to be about five times less active in the reaction of methane combustion than a quenched cubic perovskite phase with randomly distributed (disordered) Gd3+/Sr2+ ions over the A-sites of the crystal lattice.

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Держатели документа:
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Vereshchagin, S. N.; Solovyov, L. A.; Соловьев, Леонид Александрович; Rabchevskii, E. V.; Dudnikov, V. A.; Дудников, Вячеслав Анатольевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Anshits, A. G.; Аншиц, Александр Георгиевич; SB RAS project [38]; RFBR [13-02-00358]
}
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Self-propagating high-temperature synthesis and solid-phase reactions in bilayer thin films / V. G. Myagkov [et al.] // Tech. Phys. - 1998. - Vol. 43, Is. 10. - P. 1189-1192, DOI 10.1134/1.1259177. - Cited References: 14 . - ISSN 1063-7842

РУБ Physics, Applied
Рубрики:
COMBUSTION
Аннотация: Self-propagating high-temperature synthesis (SHS) in Al/Ni, Al/Fe, and Al/Co bilayer thin films is investigated. It is established that SHS is achieved in thin films at initiation temperatures 300-350 degrees lower than in powders. The mechanism of SHS in thin films is similar to the process of explosive crystallization. It is shown that at the initial stage solid-phase reactions arising on the contact surface of condensate films can be self-propagating high-temperature synthesis. SHS could find application in different technologies for obtaining film components for microelectronics. (C) 1998 American Institute of Physics. [S1063-7842(98)01010-1].

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
L. V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mal'tsev, V. K.; Maltsev, V. K.
}
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