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Synthesis of 6H-SiC single-crystal nanowires in a flow of carbon-silicon high-frequency arc plasma / G. A. Glushchenko [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 10. - P. 2107-2111, DOI 10.1134/S106378341410014X. - Cited References: 34. - This study was supported by the National Academy of Sciences of Belarus and the Siberian Branch of the Russian Academy of Sciences within the framework of the Interdisciplinary Integration project no. 24. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LARGE-SCALE SYNTHESIS
   BETA-SIC NANOWIRES
   FIELD-EMISSION PROPERTIES
   CARBIDE NANOWIRES
   NANORODS
   GROWTH
   NANOSTRUCTURES
   FULLERENES
   DISCHARGE
Аннотация: Silicon carbide 6H-SiC nanoparticles and nanowires were obtained in carbon-silicon high-frequency arc plasma plasma in a helium atmosphere at a pressure of 0.1-0.6 MPa. It was shown that 6H-SiC nanowires grow from the arc plasma, as well as from the vapor, according to the known mechanism of vapor-solid condensation on a cold surface covered with single-crystal silicon carbide nuclei. The content of silicon carbide nanowires in the condensate reached 60 wt %. The obtained single-crystal silicon 6H-SiC nanowires had the diameter of 15-18 nm and length of 200-600 nm.

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Публикация на русском языке Синтез монокристаллических нанопроволок 6H-SiC в потоке углеродно-кремниевой плазмы высокочастотной дуги [Текст] / Г. А. Глущенко [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 10. - С. 2039-2043

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Glushchenko, G. A.; Глущенко, Гарий Анатольевич; Leonova, T. A.; Kolonenko, A. L.; Колоненко, Андрей Леонидович; Dudnik, A. I.; Дудник, Александр Иванович; Osipova, I. V.; Осипова, Ирина Владимировна; Vnukova, N. G.; Внукова, Наталья Григорьевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Churilov, G. N.; Чурилов, Григорий Николаевич
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Thin fullerene-containing films synthesized by ion beam sputtering of fullerene mixtures with doping additives in vacuum / A. P. Semenov [et al.] // Tech. Phys. Lett. - 2005. - Vol. 31, Is. 12. - P. 1022-1025, DOI 10.1134/1.2150887. - Cited References: 11 . - ISSN 1063-7850

РУБ Physics, Applied
Рубрики:
DISCHARGE
Аннотация: A new approach to the synthesis of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of their occurrence between fullerene molecules. The proposed method has been experimentally implemented by using an Ar+ ion beam to sputter C-60 /C-70 fullerene mixtures (synthesized in a plasmachemical reactor at a pressure of 10(5) Pa) pressed into disk targets with a doping element (Fe, Na, B, Gd, or Se). The ion beam sputtering of dopant-containing fullerene mixtures in a vacuum of similar to 10(-2) Pa allowed micron-thick films containing C-60 and C-70 fullerenes and the corresponding dopant element (Fe, Na, B, Gd, or Se) to be grown on quartz substrates. (C) 2005 Pleiades Publishing, Inc.

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Держатели документа:
Russian Acad Sci, Siberian Div, Presidium Buryatian Sci Ctr, Dept Phys Problems, Ulan Ude, Buryatia, Russia
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Russian Acad Sci, Siberian Div, Inst Geol, Ulan Ude, Buryatia, Russia
ИФ СО РАН
Department for Physical Problems, Presidium of the Buryatian Scientific Center, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Institute of Geology, Siberian Division, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation

Доп.точки доступа:
Semenov, A. P.; Semenova, I. A.; Bulina, N. V.; Булина, Наталья Васильевна; Lopatin, V. A.; Лопатин, Владислав Александрович; Karmanov, N. S.; Churilov, G. N.; Чурилов, Григорий Николаевич
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Comparative analysis of two methods for synthesis of fullerenes at different helium pressures / A. I. Dudnik, I. V. Osipova, N. S. Nikolaev, G. N. Churilov // Fuller. Nanotub. Carbon Nanostruct. - 2020. - Vol. 28, Is. 9. - P. 697-701, DOI 10.1080/1536383X.2020.1746281. - Cited References: 16. - The reported study was funded by RFBR according to the research project No 18-32-20011 . - ISSN 1536-383X. - ISSN 1536-4046

РУБ Chemistry, Physical + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Atomic, Molecular & Chemical
Рубрики:
PLASMA
   YIELD
   DISCHARGE
   PARAMETERS
   DEPENDENCE
   C60
Кл.слова (ненормированные):
Fullerene synthesis -- alternating current -- direct current
Аннотация: The results of the effect of helium pressure in the chamber on the amount and composition of the produced fullerenes (C60, C70, etc.) synthesized in the arc plasma with graphite electrodes are presented. The findings obtained when the arc is powered by a direct (DC) and alternating (AC) currents of low frequency were compared in the same chamber with the electrodes located at the same angle to each other. These two methods are drastically different. The complete conversion of graphite into fullerene soot in AC occurs, but a part of the graphite is converted into a cathode deposit that does not contain fullerenes in DC, the relative amount of which increases when decreasing the helium pressure in the chamber. The highest fullerene content in fullerene soot of 10.2 wt.% is produced at a pressure of 127.5 kPa in AC arc, but in DC arc, the highest content of fullerenes in fullerene soot of 8.3 wt.% is produced at a pressure of 33.3 kPa.

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Держатели документа:
RAS, SB, Fed Res Ctr KSC, Kirensky Inst Phys, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Dudnik, A. I.; Дудник, Александр Иванович; Osipova, I. V.; Осипова, Ирина Владимировна; Nikolaev, N. S.; Николаев, Никита Сергеевич; Churilov, G. N.; Чурилов, Григорий Николаевич; RFBRRussian Foundation for Basic Research (RFBR) [18-32-20011]
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