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Solid-state formation of ferromagnetic δ-Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy / V. G. Myagkov [et al.] // Phys. Status Solidi B. - 2012. - Vol. 249, Is. 8. - P. 1541-1545, DOI 10.1002/pssb.201248064. - Cited References: 39 . - ISSN 0370-1972

РУБ Physics, Condensed Matter
Рубрики:
EPITAXIAL-GROWTH
   PERPENDICULAR ANISOTROPY
   MAGNETIC-PROPERTIES
   PHASE-FORMATION
   GAAS
   GAN
Кл.слова (ненормированные):
high anisotropy constants -- MnxGa1-x alloys -- rotatable magnetic anisotropies -- thin films
Аннотация: Solid-state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X-ray study showed that the formation of the Ga/Mn → (250 °C) ϕ-Ga7.7Mn2.3 → (350 °C) δ-Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ-Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H > HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Bondarenko, G. N.
Mikhlin, Yu. L.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Mikhlin, Y. L.; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films / L. Badía-Romano [et al.] // J. Magn. Magn. Mater. - 2014. - Vol. 364. - P. 24-33, DOI 10.1016/j.jmmm.2014.04.029. - Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPUTTERED FE/SI SUPERLATTICES
   INTERLAYER EXCHANGE
   GIANT MAGNETORESISTANCE
   MAGNETIC-PROPERTIES
   SILICIDE FORMATION
   EPITAXIAL-GROWTH
   ROOM-TEMPERATURE
   IRON DISILICIDE
   TRILAYER FILMS
   THIN-FILMS
Кл.слова (ненормированные):
Fe-Si multilayer -- Chemical transformation -- Fe silicide -- Interlayer exchange coupling -- Magnetic domain -- in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5
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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Univ Porto, Fac Ciencias, Dept Fis Astron, IN IFIMUP, P-4169007 Oporto, Portugal
Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
Univ Oviedo Principado Asturias, CSIC, CINN, E-33007 Oviedo, Spain
Forschungszentrum Julich, Elect Properties, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Aerospace Univ, Krasnoyarsk 660014, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Badía-Romano, L.; Rubín, J.; Magén, C.; Bartolomé, F.; Sesé, J.; Ibarra, M.R.; Bartolomé, J.; Hierro-Rodriguez, A.; Martín, J.I.; Alameda, J.M.; Bürgler, D.E.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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Growth of α-FeSi2 nanocrystals on si(100) with Au catalyst / I. A. Tarasov [et al.] // Mater. Lett. - 2016. - Vol. 168. - P. 90-94, DOI 10.1016/j.matlet.2016.01.033. - Cited References: 25. - The work was supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), The Russian Foundation for Basic Research (RFBR) (Grants no. 13-02-01265), State Contract no. 02.G25.31.0043 and State Task no. 16.663.2014К). . - ISSN 0167-577X

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
EPITAXIAL-GROWTH
   LOW-TEMPERATURE
   FeSi2
   NANOWIRES
   Si(111)
   FILMS
   Si
Кл.слова (ненормированные):
Nanomaterials -- Molecular beam epitaxy -- α-FeSi2 -- Electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.

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Держатели документа:
Siberian State Aerospace University, 31 Krasnoyarsky Rabochiy Av., Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok 50, bld. 38, Krasnoyarsk, Russian Federation
Far Eastern State Transport University, Serysheva str. 47, Khabarovsk, Russian Federation
Krasnoyarsk Scientific Centre, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Nemtsev, I. V.; Немцев, Иван Васильевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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    Ca6La4(SiO4)2(PO4)4O2:Eu2+: a novel apatite green-emitting phosphor for near-ultraviolet excited w-LEDs / Y. F. Xia [et al.] // J. Mater. Chem. C. - 2016. - Vol. 4, Is. 21. - P. 4675-4683, DOI 10.1039/c6tc01418f. - Cited References:37. - This study was sponsored by the National Natural Science Foundation of China (Grant No. 51472223), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-12-0951) and the Fundamental Research Funds for the Central Universities (Grant No. 2652015020 and Grant No. 2652015008). . - ISSN 2050-7526. - ISSN 2050-7534
   Перевод заглавия: Ca6La4(SiO4)2(PO4)4O2:Eu2+: Новый зеленый люминофор со структурой апатита для белых люминесцентных ламп (w-LED), облучающихся ультрафиолетом

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
SOLID-SOLUTION PHOSPHORS
   PULSED-LASER DEPOSITION
   HIGH THERMAL-STABILITY
   WHITE-LIGHT
   LUMINESCENCE PROPERTIES
   ENERGY-TRANSFER
   SINGLE-PHASE
   CRYSTAL-STRUCTURE
   RED LUMINESCENCE
   EPITAXIAL-GROWTH
Аннотация: A novel apatite phosphor Ca6La4(SiO4)2(PO4)4O2:Eu2+ was prepared by conventional high-temperature solid-state reaction. Phase purity was examined by XRD and XPS analysis. The crystal structure information, such as space group, cell parameters and atomic coordinates, were refined by the Rietveld method, revealing that Eu2+ occupied the sites of Ca2+ ions. Moreover, low-temperature experiments, including low-temperature PL spectra and low-temperature decay curve, were used to prove the existence of two luminescence centers in Ca6La4(SiO4)2(PO4)4O2:Eu2+. With the increase in doping concentration of Eu2+, the emission wavelength shows a red shift from 498 nm to 510 nm, which is mainly caused by the increase in crystal-field splitting by Eu2+. The optimized concentration of Eu2+ was confirmed to be 0.01, the Rc was calculated to be 20.09 Å and the energy transfer between Eu2+ was demonstrated to be by exchange interaction. Moreover, good thermal stability has been proved by a temperature-dependence experiment; it shows that the phosphor can maintain 55% of emitting intensity at 150 °C compared to that at room temperature. Finally, the Ca6La4(SiO4)2(PO4)4O2:Eu2+ phosphor was fabricated with commercial red (CaAlSiN3:Eu2+) and blue (BAM:Eu2+) phosphor coating on a n-UV chip. This proves that this green phosphor has the potential to be used in a w-LED lamp.

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Держатели документа:
China Univ Geosci, Beijing Key Lab Mat Utilizat Nonmetall Minerals &, Sch Mat Sci & Technol, Natl Lab Mineral Mat, Beijing 100083, Peoples R China.
SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.

Доп.точки доступа:
Xia, Y. F.; Liu, Y. G.; Huang, Z. H.; Fang, M. H.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Mei, L. F.
}
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Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase / V. G. Myagkov [et al.] // JETP Letters. - 2010. - Vol. 92, Is. 10. - P. 687-691, DOI 10.1134/S0021364010220108. - Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010." . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
PERPENDICULAR ANISOTROPY
   EPITAXIAL-GROWTH
   GA
   SEMICONDUCTORS
   SPINTRONICS
   CRYSTAL
   ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.
Solov'ev, L. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Solov'ev, L. A.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, ul. Karla Marksa 43, Krasnoyarsk 660049, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solov'ev, L. A.; Соловьев, Леонид Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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