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    Structure and optical properties of Li2Ga2GeS6 nonlinear crystal / L. I. Isaenko [et al.] // Opt. Mater. - 2015. - Vol. 47. - P. 413-419, DOI 10.1016/j.optmat.2015.06.014. - Cited References:23. - This work was supported by the Russian Foundation of Basic Research (Grant No. 15-02-03408a) . - ISSN 0925-3467
   Перевод заглавия: Структура и оптические свойства нелинейного кристалла Li2Ga2GeS6

РУБ Materials Science, Multidisciplinary + Optics
Рубрики:
PHASE-MATCHING PROPERTIES
   MID-IR
   PARAMETRIC AMPLIFICATION
   GENERATION
   LiGaS2
   GROWTH
   DAMAGE
   Ga
   Te
   Se
Кл.слова (ненормированные):
Li2Ga2GeS6 -- Structure -- Absorption -- Raman -- Luminescence -- Excitons
Аннотация: Structure and optical properties of new nonlinear crystal - Li2Ga2GeS6 single crystal of optical quality, grown by the Bridgman technique were studied. The data on transmission, Raman scattering, luminescence emission, excitation and thermal quenching as well as thermostimulated luminescence are presented. Fundamental absorption edge is determined by the direct allowed electronic transitions: The values of optical band gap are estimated. Absorption band at 8.0 mu m is due to S-S vibrations. Features in photoluminescence spectra are associated with excitons: both free (narrow line at 371 nm) and self-trapped ones (broad bands at 596, 730 and 906 nm). Spontaneous emission in the 80-170 K range, both at crystal heating and cooling, is typical of pyroelectrics: This confirms the absence of symmetry center in Li2Ga2GeS6 and an opportunity of laser frequency nonlinear conversion. (C) 2015 Elsevier B.V. All rights reserved.

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Держатели документа:
SB RAS, VS Sobolev Inst Geol & Mineral, Novosibirsk 630090, Russia.
Novosibirsk State Univ, Novosibirsk 630090, Russia.
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia.
Far Eastern State Transport Univ, Khabarovsk 680021, Russia.

Доп.точки доступа:
Isaenko, L. I.; Исаенко Л. И.; Yelisseyev, A. P.; Елисеев, Александр Павлович; Lobanov, S. I.; Лобанов С. И.; Krinitsin, P. G.; Криницын, Павел Геннадьевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Russian Foundation of Basic Research [15-02-03408a]
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Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase / V. G. Myagkov [et al.] // JETP Letters. - 2010. - Vol. 92, Is. 10. - P. 687-691, DOI 10.1134/S0021364010220108. - Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010." . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
PERPENDICULAR ANISOTROPY
   EPITAXIAL-GROWTH
   GA
   SEMICONDUCTORS
   SPINTRONICS
   CRYSTAL
   ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.
Solov'ev, L. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Solov'ev, L. A.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, ul. Karla Marksa 43, Krasnoyarsk 660049, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solov'ev, L. A.; Соловьев, Леонид Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
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