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Theoretical study of the diffusion of lithium in crystalline and amorphous silicon / A. S. Fedorov [et al.] // JETP Letters. - 2012. - Vol. 95, Is. 3. - P. 143-147, DOI 10.1134/S0021364012030058. - Cited References: 28. - We are grateful to the Institute of Computational Modeling, Siberian Branch, Russian Academy of Sciences; the Interdepartmental Supercomputer Center, Russian Academy of Sciences; and the Computer Center, Siberian Federal University, for the use of their computer clusters for performing all calculations. This work was supported by the Ministry of Education and Science of the Russian Federation (federal program "Human Capital for Science and Education in Innovative Russia" for 2009-2013). . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
ACCELERATED MOLECULAR-DYNAMICS
   AB-INITIO
   INFREQUENT EVENTS
   SIMULATION
   RELAXATION
   HYDROGEN
   POINTS
   SI
Аннотация: The effect of the lattice deformation on potential barriers for the motion of a lithium atom in crystalline silicon has been studied through ab initio density functional calculations. A new universal method of calculating the diffusion coefficient of an admixture in amorphous solid media through the activation mechanism has been proposed on the basis of these data. The method is based on the calculation of the statistical distribution of potential barriers for the motion of an admixture atom between minima depending on the position of neighboring atoms. First, the amorphous structure, which is generated by annealing from the crystalline structure with vacancies, has been simulated. Then, the statistical distribution of the potential barriers in the amorphous structure for various local environments of the admixture atoms has been calculated by means of linear regression with the parameters determined for barriers in crystalline silicon subjected to different deformations. The diffusion coefficient of the admixture has been calculated from this distribution by using the Arrhenius formula. This method has been tested by the example of crystalline and amorphous silicon with admixture of lithium atoms. The method demonstrates that the diffusion of lithium in amorphous silicon is much faster than that in crystalline silicon; this relation is confirmed experimentally.

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Публикация на русском языке Теоретическое исследование диффузии лития в кристаллическом и аморфном кремнии [Текст] / А. С. Федоров [и др.] // Письма в Журн. эксперим. и теор. физ. : Наука, 2012. - Т. 95 Вып. 3-4. - С. 159-163

Держатели документа:
[Fedorov, A. S.
Popov, Z. I.
Ovchinnikov, S. G.] Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Kuzubov, A. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Fedorov, A. S.; Федоров, Александр Семенович; Popov, Z. I.; Попов, Захар Иванович; Kuzubov, A. A.; Кузубов, Александр Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Mobility of Vacancies under Deformation and Their Effect on the Elastic Properties of Graphene / A. S. Fedorov [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 5. - P. 820-824, DOI 10.1134/S1063776111040042. - Cited References: 35 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
WALLED CARBON NANOTUBES
   INITIO MOLECULAR-DYNAMICS
   AB-INITIO
   GRAPHITE SURFACES
   DEFECTS
   IRRADIATION
   HYDROGEN
   POINTS
Кл.слова (ненормированные):
Ab initio -- Applied strain -- Density-functional methods -- Elastic properties -- Graphene sheets -- Linear dependence -- Potential barriers -- Transition state theories -- Young's Modulus -- Elasticity -- Graphene
Аннотация: The effect of isolated vacancies on the elastic properties of a graphene sheet has been investigated by the ab initio density functional method. An almost inverse linear dependence of the Young's modulus on the concentration of vacancies has been revealed. The height of potential barriers for the motion of vacancies in various directions has been calculated as a function of various independent applied strains. The velocity of vacancies at various temperatures has been calculated as a function of applied strains using the transition state theory. DOI: 10.1134/S1063776111040042

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Держатели документа:
[Fedorov, A. S.
Popov, Z. I.
Kuzubov, A. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Fedorov, D. A.
Anan'eva, Yu. E.
Eliseeva, N. S.
Kuzubov, A. A.] Siberian Fed Univ, Krasnoyarsk 660028, Russia
ИФ СО РАН
Siberian Branch, Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660028, Russian Federation

Доп.точки доступа:
Fedorov, A. S.; Федоров, Александр Семенович; Fedorov, D. A.; Федоров, Дмитрий Александрович; Popov, Z. I.; Попов, Захар Иванович; Anan'eva, Y. E.; Eliseeva, N. S.; Kuzubov, A. A.; Кузубов, Александр Александрович
}
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Reply to "Comment on 'Unusual magnetic transitions and nature of magnetic resonance spectra in oxide glasses containing gadolinium' " / J. . Kliava [et al.] // Phys. Rev. B. - 2006. - Vol. 74, Is. 2. - Ст. 26404, DOI 10.1103/PhysRevB.74.026404. - Cited References: 8 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
WALLED CARBON NANOTUBES
HYDROGEN
Аннотация: In this Reply we show that, contrary to the suggestion of Dubroca, Hack, and Hummel (DHH), the feature observed at ca. 55 K in the magnetic susceptibility of gadolinium-containing oxide glasses [as in our earlier paper, Kliava Phys. Rev. B 71, 104406 (2005)] cannot be due to a magnetic transition in oxygen contaminant. In support of this statement, we supply transformed data at low Gd content as well as magnetization curves for a series of glasses containing dysprosium oxide measured with the same superconducting quantum interference device as in our earlier paper. In all these cases the feature in question is absent. Thus, our previous assignment of the 55 K feature to a paramagnetic-to-ferromagnetic transition in Gd clusters in the glass remains the only one consistent with the experimental results.

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Держатели документа:
Univ Bordeaux 1, CPMOH, UMR 5798, CNRS, F-33405 Talence, France
Bar Ilan Univ, Dept Chem, IL-52900 Ramat Gan, Israel
RAS, SB, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
SI Vavilov State Opt Inst, St Petersburg 199034, Russia
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
ИФ СО РАН
CPMOH, UMR 5798 CNRS, Universite Bordeaux-I, 33405 Talence Cedex, France
Department of Chemistry, Bar-Ilan University, Ramat-Gan 52900, Israel
L. V. Kirensky Institute of Physics SB RAS, Krasnoyarsk 660036, Russian Federation
S. V. Vavilov State Optical Institute, St. Petersburg 199034, Russian Federation
Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel

Доп.точки доступа:
Kliava, J.; Malakhovskii, A. V.; Малаховский, Александр Валентинович; Edelman, I. S.; Эдельман, Ирина Самсоновна; Potseluyko, A. M.; Melnikova, S. V.; Мельникова, Светлана Владимировна; Petrakovskaja, E. A.; Петраковская, Элеонора Анатольевна; Zarubina, T. V.; Petrovskii, G.; Bruckental, I.; Yeshurun, Y.
}
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