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Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation / I. A. Tambasov [et al.] // Semicond. Sci. Technol. - 2014. - Vol. 29, Is. 8. - Ст. 82001, DOI 10.1088/0268-1242/29/8/082001. - Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156. . - ISSN 0268-1242. - ISSN 1361-6641

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
TRANSPARENT CONDUCTING OXIDES
   Ga-DOPED ZnO
   LOW-TEMPERATURE
   HIGH-PERFORMANCE
   SUBSTRATE-TEMPERATURE
   INSULATOR-TRANSITION
   ROOM-TEMPERATURE
   TRANSISTORS
   COMBUSTION
   PHOTOREDUCTION
Кл.слова (ненормированные):
indium oxide thin films -- autowave oxidation -- metal-semiconductor transition -- UV irradiation -- photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Eremin, E. V.; Еремин, Евгений Владимирович; Yozhikova, E. V.; Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
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Growth of α-FeSi2 nanocrystals on si(100) with Au catalyst / I. A. Tarasov [et al.] // Mater. Lett. - 2016. - Vol. 168. - P. 90-94, DOI 10.1016/j.matlet.2016.01.033. - Cited References: 25. - The work was supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), The Russian Foundation for Basic Research (RFBR) (Grants no. 13-02-01265), State Contract no. 02.G25.31.0043 and State Task no. 16.663.2014К). . - ISSN 0167-577X

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
EPITAXIAL-GROWTH
   LOW-TEMPERATURE
   FeSi2
   NANOWIRES
   Si(111)
   FILMS
   Si
Кл.слова (ненормированные):
Nanomaterials -- Molecular beam epitaxy -- α-FeSi2 -- Electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.

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Держатели документа:
Siberian State Aerospace University, 31 Krasnoyarsky Rabochiy Av., Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok 50, bld. 38, Krasnoyarsk, Russian Federation
Far Eastern State Transport University, Serysheva str. 47, Khabarovsk, Russian Federation
Krasnoyarsk Scientific Centre, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Nemtsev, I. V.; Немцев, Иван Васильевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) / I. A. Tarasov [et al.] // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 654-659, DOI 10.1134/S1063782618050330. - Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
BETA-FESI2 THIN-FILMS
   LOW-TEMPERATURE
   GROWTH
   FESI2
   SI(100)
   SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.

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Публикация на "русском языке" Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001) [Текст] / I. A. Tarasov [et al.] // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.523

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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