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Electronic Structure of p-Type La1-xMx2+MnO3 Manganites in the Ferromagnetic and Paramagnetic Phases in the LDA plus GTB Approach / V. A. Gavrichkov [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 5. - P. 860-876, DOI 10.1134/S1063776111030101. - Cited References: 47. - This study was supported financially by integration project no. 40 of the Ural and Siberian Branches of the Russian Academy of Sciences, the program "Strong Electron Correlations" of the Russian Academy of Sciences, and the Russian Foundation for Basic Research (project no. 10-02-00251-a). . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
DOUBLE-EXCHANGE
   COLOSSAL MAGNETORESISTANCE
   THIN-FILMS
   PHYSICS
   LA1-XSRXMNO3
   RESISTIVITY
   SEPARATION
   TRANSPORT
   MODEL
Кл.слова (ненормированные):
Complex structure -- Cubic materials -- Ferromagnetic phase -- Half metals -- Jahn Teller effect -- Metal properties -- Metal types -- Orbitals -- P-type -- Paramagnetic phase -- Paramagnetic phasis -- Quasi particles -- Spectral intensity -- Spin projections -- Strong electron correlations -- Barium -- Density functional theory -- Electron correlations -- Electron density measurement -- Electronic properties -- Electronic structure -- Fermi level -- Ferromagnetic materials -- Ferromagnetism -- Manganese oxide -- Manganites -- Paramagnetic materials -- Paramagnetism -- Valence bands -- Lanthanum
Аннотация: The band structure, spectral intensity, and position of the Fermi level in doped p-type La1-xMx2+ MnO3 manganites (M = Sr, Ca, Ba) is analyzed using the LDA + GBT method for calculating the electronic structure of systems with strong electron correlations, taking into account antiferro-orbital ordering and using the Kugel-Khomskii ideas and real spin S = 2. The results of the ferromagnetic phase reproduce the state of a spin half-metal with 100% spin polarization at T = 0, when the spectrum is of the metal type for a quasiparticle with one spin projection and of the dielectric type for the other. It is found that the valence band becomes approximately three times narrower upon a transition to the paramagnetic phase. For the paramagnetic phase, metal properties are observed because the Fermi level is located in the valence band for any nonzero x. The dielectrization effect at the Curie temperature is possible and must be accompanied by filling of d(x) orbitals upon doping. The effect itself is associated with strong electron correlations, and a complex structure of the top of the valence band is due to the Jahn-Teller effect in cubic materials. DOI: 10.1134/S1063776111030101

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Публикация на русском языке Электронная структура манганитов La[1-x]M[x]2+MnO[3] p-типа в ферромагнитной и парамагнитной фазах в рамках LDA+GTB-подхода [Текст] / В. А. Гавричков [и др.] // Журнал экспериментальной и теоретической физики. - 2011. - Т. 139 Вып. 5. - С. 983-1000

Держатели документа:
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Nekrasov, I. A.] Russian Acad Sci, Ural Branch, Inst Electrophys, Ekaterinburg 620016, Russia
[Pchelkina, Z. V.] Russian Acad Sci, Ural Branch, Inst Met Phys, Ekaterinburg 620990, Russia
ИФ СО РАН
Siberian Branch, Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Ural Branch, Institute of Electrophysics, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federation
Ural Branch, Institute of Metal Physics, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nekrasov, I. A.; Pchelkina, Z. V.
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Zakharov, Y. V.
Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal / Y. V. Zakharov, L. S. Titov // Phys. Solid State. - 2004. - Vol. 46, Is. 2. - P. 303-305, DOI 10.1134/1.1649428. - Cited References: 9 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
RESISTIVITY
WALLS
Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660062, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Krasnoyarsk State University, Svobodnyi pr. 79, Krasnoyarsk 660062, Russian Federation

Доп.точки доступа:
Titov, L. S.
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Gavrichkov, V. A.
Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS
   HGCR2SE4
   RESISTIVITY
   FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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Study of electroconductivity in cobalt nanocrystalline films / G. I. Frolov [и др.] // Fiz. Tverd. Tela. - 1996. - Vol. 38, Is. 4. - P. 1208-1213. - Cited References: 13 . - ISSN 0367-3294

РУБ Physics, Condensed Matter
Рубрики:
METAL-FILMS
   RESISTIVITY
   CONDUCTION
   ELECTRONS
   DENSITY

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Доп.точки доступа:
Frolov, G. I.; Zhigalov, V. S.; Polskii, A. I.; Pozdnyakov, V. G.
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Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides / O. B. Romanova [et al.] // J. Appl. Phys. - 2019. - Vol. 125, Is. 17. - Ст. 175706, DOI 10.1063/1.5085701. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research (Project No. 18-52-00009 Bel_a). The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Project No. 18-42-240001 r_a), to the research project: "Inversion of the Sign of the Components of the Magnetoelectric Tensor on the Temperature in Films of Bismuth Garnet Ferrite Replaced by Neodymium." This study was carried out in the framework of the state task No. 3.5743.2017/6.7. . - ISSN 0021-8979. - ISSN 1089-7550

РУБ Physics, Applied
Рубрики:
MAGNETIC-PROPERTIES
RESISTIVITY
Аннотация: New multifunction materials in the AgXMn1‒XS (Х = 0.05) system have been synthesized and investigated in the temperature range of 77‒500 K in magnetic fields up to 12 kOe. Near the temperature of the magnetic transition (ТN = 176 K), the anomalous behavior of the temperature dependence of magnetization has been observed and has been attributed to the formation of ferrons. An analysis of the infrared spectroscopy data and I‒V characteristics has revealed the spin-polaron subband splitting. Several conductivity channels have been found from the impedance spectra. The temperature and magnetic field dependences of the carrier relaxation time have been obtained. The magnetoresistance (−21%), magnetoimpedance (−65%), magnetothermopower (−40%), and photoconductivity effects have been detected. The majority carrier type, density, and mobility have been determined from the Hall-effect measurement data. The observed effects have been explained using a ferron model.
Синтезированы и исследованы новые многофункциональные материалы системы AgXMn1-XS (Х=0.05) в интервале температур 77-500К в магнитных полях до 12 кЭ. В близи температуры магнитного перехода (ТN=176К) наблюдается аномальное поведение температурной зависимости намагниченности, вызванное образованием ферронов. Найдено расщепление спин-поляронной подзоны из ИК спектроскопии и вольт-амперных характеристик. Установлено несколько каналов проводимости из спектров импеданса, отличающихся частоте. Определена зависимость времени релаксации носителей заряда от температуры и магнитного поля. Обнаружено четыре эффекта: магнитосопротивление (-21%), магнитоимпеданс (-65%), магнитотермоЭДС (-40%) и фотопроводимость. Найдены: тип, концентрация и подвижность основных носителей заряда из холловских измерений. Обнаруженные эффекты объясняются в модели ферронов.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Siberian State Univ Sci & Technol, Dept Phys, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Sitnikov, M. N.; Kretinin, V. V.; Yanushkevich, K. I.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Russian Foundation for Basic Research [18-52-00009 Bel_a]; Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-240001 r_a]
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