Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>S=SI<.>)

Общее количество найденных документов : 6
Показаны документы с 1 по 6

Theoretical study of the diffusion of lithium in crystalline and amorphous silicon / A. S. Fedorov [et al.] // JETP Letters. - 2012. - Vol. 95, Is. 3. - P. 143-147, DOI 10.1134/S0021364012030058. - Cited References: 28. - We are grateful to the Institute of Computational Modeling, Siberian Branch, Russian Academy of Sciences; the Interdepartmental Supercomputer Center, Russian Academy of Sciences; and the Computer Center, Siberian Federal University, for the use of their computer clusters for performing all calculations. This work was supported by the Ministry of Education and Science of the Russian Federation (federal program "Human Capital for Science and Education in Innovative Russia" for 2009-2013). . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
ACCELERATED MOLECULAR-DYNAMICS
   AB-INITIO
   INFREQUENT EVENTS
   SIMULATION
   RELAXATION
   HYDROGEN
   POINTS
   SI
Аннотация: The effect of the lattice deformation on potential barriers for the motion of a lithium atom in crystalline silicon has been studied through ab initio density functional calculations. A new universal method of calculating the diffusion coefficient of an admixture in amorphous solid media through the activation mechanism has been proposed on the basis of these data. The method is based on the calculation of the statistical distribution of potential barriers for the motion of an admixture atom between minima depending on the position of neighboring atoms. First, the amorphous structure, which is generated by annealing from the crystalline structure with vacancies, has been simulated. Then, the statistical distribution of the potential barriers in the amorphous structure for various local environments of the admixture atoms has been calculated by means of linear regression with the parameters determined for barriers in crystalline silicon subjected to different deformations. The diffusion coefficient of the admixture has been calculated from this distribution by using the Arrhenius formula. This method has been tested by the example of crystalline and amorphous silicon with admixture of lithium atoms. The method demonstrates that the diffusion of lithium in amorphous silicon is much faster than that in crystalline silicon; this relation is confirmed experimentally.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ

Публикация на русском языке Теоретическое исследование диффузии лития в кристаллическом и аморфном кремнии [Текст] / А. С. Федоров [и др.] // Письма в Журн. эксперим. и теор. физ. : Наука, 2012. - Т. 95 Вып. 3-4. - С. 159-163

Держатели документа:
[Fedorov, A. S.
Popov, Z. I.
Ovchinnikov, S. G.] Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Kuzubov, A. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Fedorov, A. S.; Федоров, Александр Семенович; Popov, Z. I.; Попов, Захар Иванович; Kuzubov, A. A.; Кузубов, Александр Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

Growth of α-FeSi2 nanocrystals on si(100) with Au catalyst / I. A. Tarasov [et al.] // Mater. Lett. - 2016. - Vol. 168. - P. 90-94, DOI 10.1016/j.matlet.2016.01.033. - Cited References: 25. - The work was supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), The Russian Foundation for Basic Research (RFBR) (Grants no. 13-02-01265), State Contract no. 02.G25.31.0043 and State Task no. 16.663.2014К). . - ISSN 0167-577X

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
EPITAXIAL-GROWTH
   LOW-TEMPERATURE
   FeSi2
   NANOWIRES
   Si(111)
   FILMS
   Si
Кл.слова (ненормированные):
Nanomaterials -- Molecular beam epitaxy -- α-FeSi2 -- Electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Siberian State Aerospace University, 31 Krasnoyarsky Rabochiy Av., Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok 50, bld. 38, Krasnoyarsk, Russian Federation
Far Eastern State Transport University, Serysheva str. 47, Khabarovsk, Russian Federation
Krasnoyarsk Scientific Centre, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Nemtsev, I. V.; Немцев, Иван Васильевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe / A. S. Parshin [et al.] // Phys. Solid State. - 2016. - Vol. 58, Is. 5. - P. 908-914, DOI 10.1134/S106378341605019X. - Cited References: 29 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
Loss-spectroscopy
   Quantitative-analysis
   Iron
   Si
   Ge
Аннотация: The inelastic electron scattering cross section spectra of Fe have been calculated based on experimental spectra of characteristic reflection electron energy loss as dependences of the product of the inelastic mean free path by the differential inelastic electron scattering cross section on the electron energy loss. It has been shown that the inelastic electron scattering cross-section spectra have certain advantages over the electron energy loss spectra in the analysis of the interaction of electrons with substance. The peaks of energy loss in the spectra of characteristic electron energy loss and inelastic electron scattering cross sections have been determined from the integral and differential spectra. It has been shown that the energy of the bulk plasmon is practically independent of the energy of primary electrons in the characteristic electron energy loss spectra and monotonically increases with increasing energy of primary electrons in the inelastic electron scattering cross-section spectra. The variation in the maximum energy of the inelastic electron scattering cross-section spectra is caused by the redistribution of intensities over the peaks of losses due to various excitations. The inelastic electron scattering cross-section spectra have been analyzed using the decomposition of the spectra into peaks of the energy loss. This method has been used for the quantitative estimation of the contributions from different energy loss processes to the inelastic electron scattering cross-section spectra of Fe and for the determination of the nature of the energy loss peaks. © 2016, Pleiades Publishing, Ltd.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Сравнительный анализ спектров характеристических потерь энергии электронов и спектров сечения неупругого рассеяния в Fe [Текст] / А. С. Паршин [и др.] // Физ. тверд. тела : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 58 Вып. 5. - С. 881–887

Держатели документа:
Siberian State Aerospace University, ul. Gazety Krasnoyarskii Rabochii 31, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/24, Krasnoyarsk, Russian Federation
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/38, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Y.; Mikhlin, Y. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
}
Найти похожие

Electron spectroscopy of iron disilicide / A. S. Parshin [et al.] // Tech. Phys. - 2016. - Vol. 61, Is. 9. - P. 1418-1422, DOI 10.1134/S1063784216090176. - Cited References: 33 . - ISSN 1063-7842

РУБ Physics, Applied
Рубрики:
SCATTERING CROSS-SECTIONS
   ENERGY-LOSS SPECTROSCOPY
   QUANTITATIVE-ANALYSIS
   LOSS SPECTRA
   SURFACE
   SI
   HETEROSTRUCTURES
   INTERFACE
   PARAMETER
   PHASE
Аннотация: We have reported on the results of a complex investigation of iron disilicide FeSi2 using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi2 is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy. © 2016, Pleiades Publishing, Ltd.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Исследование дисилицида железа методами электронной спектроскопии [Текст] / А. С. Паршин [и др.] // Журн. техн. физ. : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 86 Вып. 9. - С. 136–140

Держатели документа:
Rechetnev Siberian State Aerospace University, ul. Krasnoyarskii rabochii 31, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/24, Krasnoyarsk, Russian Federation
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosobirsk, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodor 50/38, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Y.; Mikhlin, Y. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
}
Найти похожие

Theoretical investigation of molecular and electronic structures of buckminsterfullerene-silicon quantum dot systems / A. S. Fedorov [et al.] // J. Phys. Chem. A. - 2016. - Vol. 120, Is. 49. - P. 9767-9775, DOI 10.1021/acs.jpca.6b06959. - Cited References:20. - The work was supported by Ministry of Education and Science of Russia (Russian-Japanese joined project, Agreement 14.613.21.0010, ID RFMEFI61314X0010). We are grateful to the Joint Supercomputer Center of Russian Academy of Sciences, Moscow and Siberian Supercomputer Center of SB RAS, Novosibirsk for the opportunity to use their computer clusters to perform the calculations. S.I. acknowledges partial support from a JST CREST grant. . - ISSN 1089-5639

РУБ Chemistry, Physical + Physics, Atomic, Molecular & Chemical
Рубрики:
Si
NANOPARTICLES
DYNAMICS
Аннотация: Density functional theory (DFT) and density functional tight binding (DFTB) molecular dynamics Density functional theory (DFT) and density functional tight binding (DFTB) molecular dynamics (DFTB/MD) simulations of embedding and relaxation of buckminsterfullerene C60 molecules chemisorbed on (001) and (111) surfaces and inside bulk silicon lattice were performed. DFT calculations of chemisorbed fullerenes on both surfaces show that the C60 molecule deformation was very small and the C60 binding energies were roughly ∼4 eV. The charge analysis shows that the C60 molecule charges on (001) and (111) surfaces were between −2 and −3.5 electrons, respectively, that correlates well with the number of C–Si bonds linking the fullerene molecule and the silicon surface. DFT calculations of the C60 molecule inside bulk silicon confirm that the C60 molecule remains stable with the deformation energy values of between 11 and 15 eV for geometries with different C60 configurations. The formation of some C–Si bonds causes local silicon amorphization and corresponding electronic charge uptake on the embedded fullerene cages. Charge analysis confirms that a single C60 molecule can accept up to 20 excessive electrons that can be used in practice, wherein the main charge contribution is located on the fullerene’s carbon atoms bonded to silicon atoms. These DFT calculations correlate well with DFTB/MD simulations of the embedding process. In this process, the C60 molecule was placed on the top of the Si(111) surface, and it was further exposed by a stream of silicon dimers, resulting in subsequent overgrowth by silicon.

Смотреть статью,
WOS,
Читать в сети ИФ
Держатели документа:
Siberian Branch RAS, Fed Res Ctr KSC, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, 79 Svobodny Prospect, Krasnoyarsk 660041, Russia.
Univ Bremen, Bremen Ctr Cormputat Mat Sci, D-28359 Bremen, Germany.
Nagoya Univ, Grad Sch Sci, Inst Transformat Biomol WPI ITbM, Nagoya, Aichi 4648602, Japan.
Nagoya Univ, Grad Sch Sci, Dept Chem, Nagoya, Aichi 4648602, Japan.
Atotech Deutschland GmbH, D-10553 Berlin, Germany.

Доп.точки доступа:
Fedorov, A. S.; Федоров, Александр Семенович; Kuzubov, A. A.; Кузубов, Александр Александрович; Kholtobina, A. S.; Kovaleva, E. A.; Knaup, J.; Irle, S.
}
Найти похожие

    Atypical quantum confinement effect in silicon nanowires / P. B. Sorokin [et al.] // J. Phys. Chem. A. - 2008. - Vol. 112, Is. 40. - P9955-9964, DOI 10.1021/jp805069b. - Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. - Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096] . - OCT 9. - ISSN 1089-5639
Рубрики:
ELECTRONIC-STRUCTURE
   OPTICAL-PROPERTIES
   SI
   DENSITY
   WIRES
   EXCHANGE
   ATOMS
   DOTS
Кл.слова (ненормированные):
Electric wire -- Energy gap -- Gallium alloys -- Mathematical models -- Nanostructured materials -- Nanostructures -- Nanowires -- Quantum confinement -- Quantum electronics -- Semiconductor quantum dots -- Silicon -- Ami methods -- Band gaps -- Blue shifts -- Dinger equations -- Linear junctions -- Monotonic decreases -- Quantum confinement effects -- Quantum dots -- Semiempirical -- Silicon nanowires -- System sizes -- Theoretical models -- Nanocrystalline silicon -- nanowire -- quantum dot -- silicon -- article -- chemistry -- electron -- quantum theory -- Electrons -- Nanowires -- Quantum Dots -- Quantum Theory -- Silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

WOS,
Scopus,
eLibrary
Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia
LV Kirenskii Inst Phys, SB RAS, Krasnoyarsk 660036, Russia
RAS, N M Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

Доп.точки доступа:
Sorokin, P. B.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Avramov, P. V.; Chernozatonskii, L.A.; Fedorov, D.G.
}
Найти похожие