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Spin-crossover-induced Mott transition and the other scenarios of metallization in 3d(n) metal compounds / I. S. Lyubutin [et al.] // Phys. Rev. B. - 2009. - Vol. 79, Is. 8. - Ст. 85125, DOI 10.1103/PhysRevB.79.085125. - Cited References: 41 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
RARE-EARTH ORTHOFERRITES
   NARROW ENERGY BANDS
   HIGH-PRESSURE
   MAGNETIC COLLAPSE
   ELECTRON CORRELATIONS
   PHASE-TRANSITION
   STATE
   Y3FE5O12
   OXIDES
   EQUATION
Кл.слова (ненормированные):
bismuth compounds -- Hubbard model -- localised states -- metal-insulator transition -- metallisation -- spin systems
Аннотация: A different "Hubbard energy control" mechanism of the insulator-metal transition (IMT) in Mott-Hubbard insulators is discussed. This mechanism can be initiated by the lattice compression and it is driven by a spin crossover of 3d(5) ions from the high-spin state to the low-spin state. The spin crossover suppresses the effective Hubbard parameter U-eff down to the value enabling the insulator-metal transition according to the Mott mechanism U-eff/W approximate to 1. The classification of possible scenarios of metallization in the other 3d(n) metal compounds is also performed.

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Держатели документа:
[Lyubutin, I. S.] Russian Acad Sci, Inst Crystallog, Moscow 119333, Russia
[Ovchinnikov, S. G.] Russian Acad Sci, Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
[Gavriliuk, A. G.] RAS, Inst High Pressure Phys, Troitsk 142190, Moscow Region, Russia
[Struzhkin, V. V.] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA
ИФ СО РАН
Institute of Crystallography, Russian Academy of Sciences, Leninsky Pr. 59, Moscow 119333, Russian Federation
Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Institute for High Pressure Physics, RAS, Troitsk, Moscow Region, Russian Federation
Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015, United States

Доп.точки доступа:
Lyubutin, I. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Gavriliuk, A. G.; Struzhkin, V. V.
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