Библиотека института физики им. Л.В. Киренского СО РАН

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Bulgakov, E. N.
Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation / E. N. Bulgakov, A. F. Sadreev // J. Phys.: Condens. Matter. - 1996. - Vol. 8, Is. 45. - P. 8869-8887, DOI 10.1088/0953-8984/8/45/020. - Cited References: 38 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
SEMICONDUCTOR DOUBLE-BARRIER
   OSCILLATING QUANTUM-WELL
   DEPENDENT TRANSPORT
   INFRARED-RADIATION
   TUNNELING TIMES
   HETEROSTRUCTURES
   TRANSMISSION
   MODEL
   FREQUENCIES
   COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.

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Держатели документа:
Kirensky Institute of Physics, 660036, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
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Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

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Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
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Electron spectroscopy of iron disilicide / A. S. Parshin [et al.] // Tech. Phys. - 2016. - Vol. 61, Is. 9. - P. 1418-1422, DOI 10.1134/S1063784216090176. - Cited References: 33 . - ISSN 1063-7842

РУБ Physics, Applied
Рубрики:
SCATTERING CROSS-SECTIONS
   ENERGY-LOSS SPECTROSCOPY
   QUANTITATIVE-ANALYSIS
   LOSS SPECTRA
   SURFACE
   SI
   HETEROSTRUCTURES
   INTERFACE
   PARAMETER
   PHASE
Аннотация: We have reported on the results of a complex investigation of iron disilicide FeSi2 using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi2 is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy. © 2016, Pleiades Publishing, Ltd.

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Публикация на русском языке Исследование дисилицида железа методами электронной спектроскопии [Текст] / А. С. Паршин [и др.] // Журн. техн. физ. : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 86 Вып. 9. - С. 136–140

Держатели документа:
Rechetnev Siberian State Aerospace University, ul. Krasnoyarskii rabochii 31, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/24, Krasnoyarsk, Russian Federation
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosobirsk, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodor 50/38, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Y.; Mikhlin, Y. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
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Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films / M. N. Volochaev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 11. - P. 1465-1471, DOI 10.1134/S106378261911023X. - Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
HETEROSTRUCTURES
Кл.слова (ненормированные):
thin films -- multilayers -- oxide semiconductors -- hopping conductivity -- thermal stability
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).

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Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk, Russia.
Voronezh State Tech Univ, Voronezh 394026, Russia.

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Kalinin, Yu E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu; Bassarab, V. V.; Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
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Bikbaev, R. G.
Hyperbolic metamaterial for the Tamm plasmon polariton application / R. G. Bikbaev, S. Y. Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2020. - Vol. 37, Is. 8. - P. 2215-2220, DOI 10.1364/JOSAB.394935. - Cited References: 51. - Russian Foundation for Basic Research (18-32-00053, 19-42-240004, 19-52-52006) . - ISSN 0740-3224. - ISSN 1520-8540

РУБ Optics
Рубрики:
PHOTONIC CRYSTAL
   PERFECT ABSORBER
   STATES
   HETEROSTRUCTURES
Аннотация: The possibility of using a hyperbolic metamaterial to form conventional and epsilon-near-zero Tamm plasmon polaritons in the near-infrared and visible spectral ranges is demonstrated. The spectral properties of the hyperbolic metamaterial are investigated in the framework of the effective medium theory and confirmed by the transfer matrix method. It is found that at the oblique incidence of light onto a structure, the I-type hyperbolic metamaterial can be implemented, while II-type cannot. The sensitivity of the epsilon-near-zero wavelength to the variation in the angle of light incidence for TE and TM waves is demonstrated. It is shown that both the high-quality and broadband Tamm plasmon polaritons are excited in the investigated structures.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-32-00053, 19-42-240004, 19-52-52006]
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