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Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect / A. S. Tarasov, A. V. Luk'yanenko, I. A. Bondarev [et al.]> // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P. 665-668, DOI 10.1134/S1063785020070135. - Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886)
. - ISSN 1063-7850. - ISSN 1090-6533РУБ Physics, Applied Рубрики: TRANSPORT Кл.слова (ненормированные): iron silicide -- ferromagnet/semiconductor structures -- Hanle effect -- spin accumulation -- electric spin injection Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
Смотреть статью, Scopus, WOS, Читать в сети ИФ Публикация на русском языке Эффект спиновой аккумуляции в эпитаксиальной структуре Fe3Si/n-Si и влияние на него электрического смещения [Текст] / А. С. Тарасов, А. В. Лукьяненко, И. А. Бондарев [и др.] // Письма в Журн. техн. физ. - 2020. - Т. 46 № 13. - С. 43-46
Держатели документа: Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia. Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia. Доп.точки доступа: Tarasov, A. S.; Тарасов, Антон Сергеевич; Luk'yanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886] } Найти похожие
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