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Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films / V. G. Myagkov [et al.] // J. Alloys Compd. - 2014. - Vol. 612. - P. 189-194, DOI 10.1016/j.jallcom.2014.05.176. - Cited References: 56 . - ISSN 0925-8388. - ISSN 1873-4669

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
HIGH-TEMPERATURE FERROMAGNETISM
   PHASE-FORMATION
   In2O
   OXIDE
   NANOPARTICLES
   CO
   SEMICONDUCTORS
   NANOCRYSTALS
   COMBUSTION
   SYSTEMS
Кл.слова (ненормированные):
Thermite reactions -- Reactive films -- Ferromagnetic nanocomposite films -- Transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Yu. L.; Volochaev, M. N.; Bondarenko, G. N.; Бондаренко, Галина Николаевна
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Characterization of LSMO/C60 spinterface by first-principle calculations / E. A. Kovaleva [et al.] // Org. Electron.: Phys. Mater. Appl. - 2016. - Vol. 37. - P. 55-60, DOI 10.1016/j.orgel.2016.06.021. - Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers. . - ISSN 1566-1199

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
INITIO MOLECULAR-DYNAMICS
   TOTAL-ENERGY CALCULATIONS
   AUGMENTED-WAVE METHOD
   ORGANIC SPIN-VALVES
   BASIS-SET
   SEMICONDUCTORS
   INJECTION
   SPINTRONICS
   TEMPERATURE
   ALGORITHM
Кл.слова (ненормированные):
C60 -- LSMO -- Spinterface -- DFT -- Magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.

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Держатели документа:
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation
L.V. Kirensky Institue of Physics, 50 Akademgorodok, Krasnoyarsk, Russian Federation
Kyungpook National University, 80 Daekharo Bukgu, Daegu, South Korea
Siberian State Technological University, 82 Mira pr., Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kovaleva, E. A.; Kuzubov, A. A.; Кузубов, Александр Александрович; Avramov, P. V.; Аврамов, Павел Вениаминович; Kuklin, A. V.; Куклин, Артем Валентинович; Mikhaleva, N. S.; Krasnov, P. O.; Краснов, Павел Олегович
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Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase / V. G. Myagkov [et al.] // JETP Letters. - 2010. - Vol. 92, Is. 10. - P. 687-691, DOI 10.1134/S0021364010220108. - Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010." . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
PERPENDICULAR ANISOTROPY
   EPITAXIAL-GROWTH
   GA
   SEMICONDUCTORS
   SPINTRONICS
   CRYSTAL
   ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.
Solov'ev, L. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Solov'ev, L. A.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, ul. Karla Marksa 43, Krasnoyarsk 660049, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solov'ev, L. A.; Соловьев, Леонид Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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Abramova, G. M.
Metal-insulator transition, magnetoresistance, and magnetic properties of 3d-sulfides (Review) / G. M. Abramova, G. A. Petrakovskii // Low Temp. Phys. - 2006. - Vol. 32, Is. 8-9. - P. 725-734 ; Физика низких температур, DOI 10.1063/1.2219495. - Cited References: 74 . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
GIANT-MAGNETORESISTANCE
   PHASE-TRANSITION
   ALPHA-MNS
   COLOSSAL MAGNETORESISTANCE
   SINGLE-CRYSTALS
   FES-MNS
   SULFIDES
   FERROMAGNETISM
   SEMICONDUCTORS
   TEMPERATURE
Аннотация: The results of a study of the transport and magnetic properties of some sulfides of 3d elements are reported. The concentration transitions with a change of conductivity type and a change of magnetic order are considered, and the features of the colossal magnetoresistance in FexMn1-xS and CuVxCr1-xS2 solid solutions are discussed.

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Держатели документа:
Russian Acad Sci, LV Kirenskii Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
L. V. Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Akademgorodok 660036, Russian Federation

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Абрамова, Галина Михайловна

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Electrical properties of thin In2O3/C films / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P. 374-381, DOI 10.1134/S0020168520040019. - Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6). . - ISSN 0020-1685. - ISSN 1608-3172

РУБ Materials Science, Multidisciplinary
Рубрики:
SEMICONDUCTORS
GAS
Кл.слова (ненормированные):
amorphous and crystalline structures -- electrical resistance -- heat treatment
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h <70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.

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Публикация на русском языке Электрические свойства тонких пленок In2O3/С [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Неорган. матер. - 2020. - Т. 56 № 4. - С. 393-401

Держатели документа:
Voronezh State Tech Univ, Moskovskii Pr 14, Voronezh 394026, Russia.
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk Sci Ctr,Fed Res Ctr, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Yu. E.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.; Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
}
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