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1.


   
    Strain-induced charge ordering above room temperature in rare-earth manganites / Yu. Samoshkina, M. Rautskii, D. Neznakhin [et al.] // Dalton Trans. - 2024. - Vol. 53, Is. 12. - P. 5721-5731, DOI 10.1039/D3DT04299E. - Cited References: 52 . - ISSN 1477-9226. - ISSN 1477-9234
Аннотация: Most known mixed manganites containing rare-earth elements demonstrate a pronounced charge ordering (CO) state below room temperature. The behavior of the magnetic susceptibility and electronic magnetic resonance of polycrystalline Pr1−xSrxMnO3/YSZ (x = 0.2 and x = 0.4) films without a pronounced texture indicates the formation of the CO phase in the samples at temperatures close to and above room temperature. Moreover, this phase manifests itself with a typical sign of martensitic transformation.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg 620002, Russia
National University of Science and Technology (NUST “MISIS”), Moscow 119991, Russia
Research and Education Center “Smart Materials and Biomedical Applications”, Immanuel Kant Baltic Federal University, Kaliningrad 236041, Russia
Boreskov Institute of Catalysis, Novosibirsk, 630090, Russia
Moscow Technical University of Communication and Informatics, Moscow 111024, Russia

Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Neznakhin, D.; Stepanova, E.; Andreev, N.; Chichkov, V.; Zaikovskii, V.; Chernichenko, A.
}
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2.


   
    Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111) / A. S. Tarasov, S. V. Komogortsev, A. V. Lukyanenko [et al.] // J. Mater. Sci. - 2024. - Vol. 59, Is. 21. - P. 9423-9436, DOI 10.1007/s10853-024-09755-6. - Cited References: 79. - The study was supported by the Russian Science Foundation Grant of the № 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science. The authors thank the laboratory of the Magnetic MAX Materials created under the Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance . - ISSN 0022-2461. - ISSN 1573-4803
Аннотация: Mn5Ge3 is a ferromagnetic hexagonal crystal promising for spintronics and magnetocalorics. A systematic study and analysis of the magnetic properties of the Mn5Ge3 thin film grown on Si(111) were performed. The magnetic anisotropy of the film is determined by the shape anisotropy and the easy magnetization axis aligned along the c axis of the crystal. The uniaxial anisotropy constant Ku fully corresponds to that for a bulk single crystal, which indicates that c axis coincides with film normal. Mn5Ge3 film demonstrates high saturation magnetization MS = 900 emu/cm3 (900 kA/m) at T = 100 K and magnetocaloric effect ΔS = 3.16 ± 0.22 J kg−1 K−1 at 300 K and B = 1.5 T. ΔS is comparable to that for multicomponent or Gd rare earth films. Furthermore, a different anisotropy of the magnetocaloric effect compared to bulk Mn5Ge3 was found, which may be related to the anisotropy of the film shape and, possibly, to the domain structure. The results obtained are promising for the design and development of magnetocaloric, spintronic, and spin-caloritronic devices on a silicon platform.

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Держатели документа:
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russia, 660036
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia, 660037
Federal Research Center KSC SB RAS, Institute of Chemistry and Chemical Technology, Krasnoyarsk, Russia, 660036

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Sukhachev, A. L.; Сухачев, Александр Леонидович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Solovyov, L. A.; Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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3.


   
    Growth process, structure and electronic properties of Cr2GeC and Cr2-xMnxGeC thin films prepared by magnetron sputtering / A. S. Tarasov, S. A. Lyaschenko, M. V. Rautskii [et al.] // Processes. - 2023. - Vol. 11, Is. 8. - Ст. 2236, DOI 10.3390/pr11082236. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 21-12-00226. - The authors thank the laboratory of the Magnetic MAX Materials created under the Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance . - ISSN 2227-9717
Кл.слова (ненормированные):
MAX phase -- thin film -- magnetron sputtering -- electronic transport -- optical spectra
Аннотация: The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility μ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Solovyov, Leonid A.; Yakovlev, I. A.; Яковлев, Иван Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Bondarev, M. A.; Бондарев, Михаил Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
}
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4.


   
    Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field / I. A. Bondarev, M. V. Rautskii, N. V. Volkov [et al.] // Mater. Sci. Semicond. Process. - 2023. - Vol. 167. - Ст. 107786, DOI 10.1016/j.mssp.2023.107786. - Cited References: 32 . - ISSN 1369-8001. - ISSN 1873-4081
Кл.слова (ненормированные):
Lateral photovoltaic effect -- MIS structures -- Interface states -- Schottky field
Аннотация: Charge transport in semiconductor devices is highly sensitive to light, which opens up wide application prospects. The lateral photovoltaic effect (LPE) is widely used in position sensitive detectors due to its high sensitivity to the light spot position. We report on the features of the LPE in silicon-based metal/insulator/semiconductor structures at helium temperatures. To investigate the LPE, Fe/SiO2/p-Si and Mn/SiO2/n-Si structures have been fabricated by molecular beam epitaxy. It has been found by studying the lateral photovoltage that the SiO2/Si interface plays a significant role in transport of photogenerated carriers, mainly via the interface states, which induce electron capture/emission processes at certain temperatures. The value of the photovoltage is likely affected not only by the metallic film thickness, but also by the substrate conductivity type and Schottky barrier. The effect of the magnetic field on the LPE is driven by two mechanisms. The first one is the well-known action of the Lorentz force on photogenerated carriers and the second one is shifting of the interface state energy levels. Basically, the magnetic field suppresses the contribution of the interface states to the LPE, which suggests that the interface-induced transport can be controlled magnetically.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia
Federal Research Center “Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, 660036, Russia
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Volkov, N. V.; Волков, Никита Валентинович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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5.


   
    Particles–matrix bond in ZnCoO:H and ZnCoAlO:H films: Issues of magnetism and spin injection / Yu. E. Samoshkina, M. V. Rautskii, D. S. Neznakhin [et al.] // Materials. - 2023. - Vol. 16, Is. 10. - Ст. 3659, DOI 10.3390/ma16103659. - Cited References: 45. - This work was supported by the Russian Science Foundation [grant number 21-72-00061] . - ISSN 1996-1944
Кл.слова (ненормированные):
thin films -- zinc oxide -- metallic Co nanoparticles -- magnetic properties -- magnetic circular dichroism spectroscopy -- giant magnetoresistance effect
Аннотация: ZnCoO:H and ZnCoAlO:H films were synthesized by radio frequency magnetron sputtering in a (1 − x)Ar + xH2 mixed atmosphere with x = 0.2–0.5. The films contain different amounts of metallic Co particles (from 7.6% and higher) ~4–7 nm in size. The magnetic and magneto-optical (MO) behavior of the films was analyzed in combination with their structural data. The samples exhibit high values of magnetization (up to 377 emu/cm3) and MO response at room temperature. Two situations are considered: (1) the film magnetism is associated only with isolated metal particles and (2) magnetism is present both in the oxide matrix and in metal inclusions. It has been established that the formation mechanism of the magnetic structure of ZnO:Co2+ is due to the spin-polarized conduction electrons of metal particles and zinc vacancies. It was also found that in the presence of two magnetic components in the films, these components are exchange-coupled. In this case, the exchange coupling generates a high spin polarization of the films. The spin-dependent transport properties of the samples have been studied. A high value of the negative magnetoresistance of the films at room temperature (~4%) was found. This behavior was explained in terms of the giant magnetoresistance model. Thus, the ZnCoO:H and ZnCoAlO:H films with high spin polarization can be considered as sources of spin injection.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Yekaterinburg, Russia
Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, China
Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, China

Доп.точки доступа:
Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Neznakhin, D. S.; Stepanova, E. A.; Edelman, I. S.; Эдельман, Ирина Самсоновна; Chou, Hsiung
}
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6.


   
    Facile synthesis and selected characteristics of two-dimensional material composed of iron sulfide and magnesium-based hydroxide layers (tochilinite) / Yu. L. Mikhlin, R. V. Borisov, M. N. Likhatski [et al.] // New J. Chem. - 2023. - Vol. 47, Is. 25. - P. 11869-11881, DOI 10.1039/D3NJ00758H. - Cited References: 97. - This research was financially supported by the Russian Science Foundation, project 22-13-00321 . - ISSN 1144-0546. - ISSN 1369-9261
   Перевод заглавия: Синтез и некоторые характеристики двумерного материала, состоящего из слоев сульфида железа и гидроксида на основе магния (точилинит)
Аннотация: We report here a simple hydrothermal synthesis of 100–200 nm flakes of tochilinite (Fe1−xS)·n(Mg,Fe)(OH)2 constructed by interchanging atomic sulfide and hydroxide sheets as a representative of a new platform of multifunctional two-dimensional materials. The reliable formation of tochilinites was ensured by an excess of sodium sulfide, with the assembly of the metal sulfide and hydroxide sheets driven by their opposite electric charges. X-ray photoelectron spectroscopy found that the hydroxide layers involved Fe3+ cations from 10 to 40% of total iron tuned by addition of Al and Li entering the layers; the Fe1−xS sheets comprised comparable amounts of high-spin Fe3+ and Fe2+ centers, and minor S–S bonding. The room-temperature Mössbauer spectra fitted with several doublets (chemical shift of 0.35–0.4 mm s−1 and varying quadrupole splitting) transformed to three six-line patterns (hyperfine fields of ∼290, 350 and 480 kOe) due to magnetic ordering at 4.2 K, albeit the paramagnetic behavior observed in SQUID experiments. A series of UV-vis absorption maxima were explained in terms of both the high-index all-dielectric Mie resonance, in line with the permittivity measurement data, and the ligand-metal charge transfer resembling that in Fe–S clusters in proteins. Prospective properties and applications of the materials are discussed.

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Держатели документа:
Institute of Chemistry and Chemical Technology, Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences, Akademgorodok, 50/24, Krasnoyarsk, Russia
Kirensky Institute of Physics, Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences, Akademgorodok 50/38, Krasnoyarsk, Russia
Siberian Federal University, Svobodny av. 79, Krasnoyarsk, Russia

Доп.точки доступа:
Mikhlin, Yuri L.; Borisov, Roman V.; Likhatski, Maxim N.; Bayukov, O. A.; Баюков, Олег Артемьевич; Knyazev, Yu. V.; Князев, Юрий Владимирович; Zharkov, S. M.; Жарков, Сергей Михайлович; Vorobyev, Sergey A.; Tomashevich, Yevgeny V.; Ivaneeva, Anastasiya D.; Karacharov, Anton A.; Karpov, Denis V.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич
}
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7.


   
    Магнитные свойства и анизотропия магнитокалорического эффекта в тонких пленках MnGe3, выращенных на Si (111) / А. С. Тарасов, М. В. Рауцкий, А. В. Лукьяненко, И. А. Соболев // Магнитные материалы. Новые технологии : тез. докл. IX Байкал. междунар. конф. BICMM-2023 / чл. прогр. ком.: S. S. Aplesnin [et al.] ; чл. орг. ком. R. S. Iskhakov [et al.]. - Иркутск, 2023. - С. 145, DOI 10.26516/978-5-9624-2178-0.2023.1-207. - Библиогр.: 4 . - ISBN 978-5-962402178-0
   Перевод заглавия: Magnetic properties and anisotropy of magnetocaloricc effect in the MnGe3 thin film grown on Si(111)

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Аплеснин, Сергей Степанович \чл. прогр. ком.\; Aplesnin, S. S.; Балаев, Дмитрий Александрович \чл. прогр. ком.\; Balaev, D. A.; Овчинников, Сергей Геннадьевич \чл. прогр. ком.\; Ovchinnikov, S. G.; Исхаков, Рауф Садыкович \чл. орг. ком.\; Iskhakov, R. S.; Тарасов, Антон Сергеевич; Tarasov, A. S.; Рауцкий, Михаил Владимирович; Rautskii, M. V.; Лукьяненко, Анна Витальевна; Lukyanenko, A. V.; Соболев, И. А.; Байкальская международная конференция "Магнитные материалы. Новые технологии"(9 ; 2023 ; сент. ; 11-14 ; Байкальск); "Магнитные материалы. Новые технологии", Байкальская международная конференция(9 ; 2023 ; сент. ; 11-14 ; Байкальск); "Magnetic materials. New tecnologies", Baikal International Conference(9 ; 2023 ; Sept. ; 11-14 ; Baikalsk); Иркутский государственный университет
}
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8.


   
    Magnetic anisotropy and domain structure of epitaxia Mn5Ge3 thin film on Si(111) substrate / M. V. Rautskii, I. Sobolev, I. A. Yakovlev [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 151. - Cited References: 5. - РФН № 21-12-00226 ; Красноярский регион. фонд науки

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Rautskii, M. V.; Рауцкий, Михаил Владимирович; Sobolev, I.; Yakovlev, I. A.; Яковлев, Иван Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
}
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9.


   
    The role of SiO2/Si interface in magnetic field driven lateral photovoltaic effect in Mn/SiO2/n-Si and Fe/SiO2/p-Si MIS structures / I. A. Bondarev, M. V. Rautskii, N. V. Volkov [et al.] // Book of abstacts of Samarkand International Symposium on Magnetism (SISM-2023) / int. adv. com. S. G. Ovchinnikov [et al.]. - 2023. - Ст. 3OT-A-8. - P. 145. - Cited References: 1 . - ISBN 978-5-00202-320-2

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Держатели документа:
L.V. Kirensky Institute of Physics SB RAS
Siberian Federal University

Доп.точки доступа:
Ovchinnikov, S. G. \int. adv. com.\; Овчинников, Сергей Геннадьевич; Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Volkov, N. V.; Волков, Никита Валентинович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Samarkand International Symposium on Magnetism(2023 ; July 2-6 ; Samarkand); Samarkand State University
}
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10.


   
    Electronic transport in Cr2GeC and Cr2-xMnxGeC thin films grown by magnetron sputtering / A. S. Tarasov, M. V. Rautskii, A. V. Lukyanenko [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 130. - Cited References: 5. - РФН № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, M. A.; Бондарев, Михаил Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Andryushchenko, T. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
}
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