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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.111
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Gustaitsev A. O., Volkov N. V.
Заглавие : Bias-controlled magnetoimpedance effect in a mis structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): Book of abstracts. - 2014. - Ст.1PO-K-8. - P.541. - ISBN 978-5-91978-025-0
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled AC and DC magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст.1RP-A-10. - P.315. - ISBN 978-5-91978-025-0
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism , Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156], Presidium of the Russian Academy of Sciences [20.8], Ministry of Education and Science of the Russian Federation [02.G25.31.0043]
Место публикации : J. Magn. Magn. Mater./ Moscow International Symposium on Magnetism (6th ; Moscow) (29 June – 3 July 2014): Elsevier Science, 2015. - Vol. 383. - P.69-72. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.11.014
Примечания : Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043.
Предметные рубрики: SILICON
SPINTRONICS
FIELD
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--magnetoresistance--magnetoimpedance--photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin E. V., Gudim I. A., Temerov V. L., Smolyakov D. A., Molokeev M. S.
Заглавие : Comparing the magnetic and magnetoelectric properties of the SmFe3(BO3)4 ferroborate single crystals grown using different solvents
Коллективы : Russian Foundation for Basic Research (RFBR) [18-02-00696_a]; RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-240011 p_a]
Место публикации : J. Cryst. Growth. - 2019. - Vol. 518. - P.1-4. - ISSN 0022-0248, DOI 10.1016/j.jcrysgro.2019.04.017. - ISSN 1873-5002(eISSN)
Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research (RFBR) according to the research projects No. 18-02-00696_a and RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No. 18-42-240011 p_a.
Предметные рубрики: POLARIZATION
FEATURES
Ключевые слова (''Своб.индексиров.''): impurities--growth from solutions--single crystal growth--borates--ferroelectric materials--magnetic materials
Аннотация: SmFe3(BO3)4 single crystals have been grown from the bismuth trimolybdate and lithium tungstate-based melt–solutions. Samarium ferroborate single crystals were grown first from the lithium–tungstate flux. The magnetic and magnetoelectric properties of the synthesized crystals have been compared. It is shown that the SmFe3(BO3)4 ferroborate grown from the bismuth trimolybdate-based melt–solution contains impurities of Bi3+ ions (∼5% at.), which replace Sm3+ ions, while the SmFe3(BO3)4, ferroborate grown from the lithium tungstate-based melt–solution contains minor or zero amounts of such impurities. The magnetoelectric and magnetodielectric effects with the Bi3+ admixture appeared 1.5× stronger than in SmFe3(BO3)4; this is probably due to twinning.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Varnakov S. N., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure
Место публикации : AIP Adv.: American Institute of Physics, 2017. - Vol. 7, Is. 1. - Ст.015206. - ISSN 21583226 (ISSN), DOI 10.1063/1.4974876
Примечания : Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Ключевые слова (''Своб.индексиров.''): electric fields--impact ionization--ionization--magnetic fields--magnetism--manganese--schottky barrier diodes--effect of magnetic field--high magnetic fields--low temperatures--magnetic and electric fields--magnetotransport effects--magnetotransport phenomena--schottky barriers--switching devices--magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.21 (Шифр В37/H99-812624296)
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mikhlin, Yuri L., Borisov, Roman V., Likhatski, Maxim N., Bayukov O. A., Knyazev Yu. V., Zharkov S. M., Vorobyev, Sergey A., Tomashevich, Yevgeny V., Ivaneeva, Anastasiya D., Karacharov, Anton A., Karpov, Denis V., Velikanov D. A., Rautskii M. V., Smolyakov D. A., Tarasov A. S.
Заглавие : Facile synthesis and selected characteristics of two-dimensional material composed of iron sulfide and magnesium-based hydroxide layers (tochilinite)
Место публикации : New J. Chem. - 2023. - Vol. 47, Is. 25. - P.11869-11881. - ISSN 11440546 (ISSN), DOI 10.1039/D3NJ00758H. - ISSN 13699261 (eISSN)
Примечания : Cited References: 97. - This research was financially supported by the Russian Science Foundation, project 22-13-00321
Аннотация: We report here a simple hydrothermal synthesis of 100–200 nm flakes of tochilinite (Fe1−xS)·n(Mg,Fe)(OH)2 constructed by interchanging atomic sulfide and hydroxide sheets as a representative of a new platform of multifunctional two-dimensional materials. The reliable formation of tochilinites was ensured by an excess of sodium sulfide, with the assembly of the metal sulfide and hydroxide sheets driven by their opposite electric charges. X-ray photoelectron spectroscopy found that the hydroxide layers involved Fe3+ cations from 10 to 40% of total iron tuned by addition of Al and Li entering the layers; the Fe1−xS sheets comprised comparable amounts of high-spin Fe3+ and Fe2+ centers, and minor S–S bonding. The room-temperature Mössbauer spectra fitted with several doublets (chemical shift of 0.35–0.4 mm s−1 and varying quadrupole splitting) transformed to three six-line patterns (hyperfine fields of ∼290, 350 and 480 kOe) due to magnetic ordering at 4.2 K, albeit the paramagnetic behavior observed in SQUID experiments. A series of UV-vis absorption maxima were explained in terms of both the high-index all-dielectric Mie resonance, in line with the permittivity measurement data, and the ligand-metal charge transfer resembling that in Fe–S clusters in proteins. Prospective properties and applications of the materials are discussed.
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