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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: physics and technology: proc. 26th Int. symp. - 2018. - P.209-210. - ISBN 978-985-7202-35-5
Примечания : Cited References: 3
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetsova T. V., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.14-15. - ISBN 978-5-904603-08-3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Kosyrev N. N., Komarov V. A., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Shemukhin A. A., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111)
Место публикации : Thin Solid Films: Elsevier, 2017. - Vol. 642. - P.20-24. - ISSN 00406090 (ISSN), DOI 10.1016/j.tsf.2017.09.025
Примечания : Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2).
Ключевые слова (''Своб.индексиров.''): iron silicides--wet etching--planar structures--moke microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kosyrev N. N., Varnakov S. N., Tarasov I. A., Lyashenko S. A., Ovchinnikov S. G.
Заглавие : Characterization of manganese and iron silicides by in situ spectral generalized magneto-optical ellipsometry
Коллективы : Workshop Ellipsometry (7; 2012 ; март ; 5-7; Leipzig, Germany)
Место публикации : 7th Workshop on Ellipsometry: abstract book. - 2012. - P. - 82
Аннотация: Dilute magnetic semiconductors (DMS) combine the electronic transport properties of semiconductors and memory characteristics of magnetic materials. The complementary properties of semiconductor and ferromagnetic material can manipulate both degrees of freedoms of electrons0 spins and charges for spintronic devices. In recent years, group IV(Ge,Si)-based DMSs attract considerable experimental effort due to the compatibility with mainstream silicon technology. In ourworkwe present the investigation of structural,magnetic and optical properties ofmanganese and iron silicides thin films on Si (100) substrate by in situ spectral generalizedmagneto-optical ellipsometry. Themeasurementswere performed by spectral and laser ellipsometers (“Spectroscan“ and “LEF-71“ respectively by Institute Semiconductors Physics SB RAS), optimized tomeasure not only traditional ellipsometric parameters, but also magneto-optical response of the sample. The magnetoellipsometers were integrated into the ultrahigh vacuum chambers of molecular beam epitaxy setup, which allowed to control the optical and magnetic properties of thin films directly in the growth process. As a result of the magneto-optical response analysis, it was found that iron and manganese silicides in magnetic phase were formed on the Si surface and by analysis of the ellipsometric parameters dependence on evaporation time the silicide nanoclusters were identified and their structural properties were found. The work was supported by project 4.1 of the OFN RAS, project 27.10 of the Presidium RAS, integration project22 of SB RAS and FEB RAS, and also the FCP NK-744P/6 .
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bartolomé J., Badía-Romano L., Rubín J. , Bartolomé F., Magén C., Bürgler D. E., Rubio-Zuazo J., Castro G. R. , Varnakov S. N., Yakovlev I. A., Tarasov I. A., Platunov M. S., Ovchinnikov S. G.
Заглавие : Composition and morphology of Fe-Si interfaces and (Fe/Si)3 multilayer nanostructures
Коллективы : International Conference on Magnetism
Место публикации : 20th Int. Conf. on Magnetism (ICM-2015): book of abstracts. - 2015. - Ст.WE.J.2_I1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shanidze L. V., Tarasov A. S., Rautskiy M. V., Zelenov F. V., Konovalov S. O., Nemtsev I. V., Voloshin A. S., Tarasov I. A., Baron F. A., Volkov N. V.
Заглавие : Cu-doped TiNxOy thin film resistors DC/RF performance and reliability
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation ofWorld Tier Laboratories [075-15-2019-1886]
Место публикации : Appl. Sci. - 2021. - Vol. 11, Is. 16. - Ст.7498. - ISSN 2076-3417(eISSN), DOI 10.3390/app11167498
Примечания : Cited References: 13. - This research was funded by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, project code 20-42-240013 and by Grant of the Government of the Russian Federation for Creation ofWorld Tier Laboratories (contract No. 075-15-2019-1886)
Предметные рубрики: GROWTH
Аннотация: We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.
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Вид документа : Статья из сборника (выпуск монографической серии)
Шифр издания :
Автор(ы) : Maximova O. A., Kosyrev N. N., Varnakov S. N., Lyashchenko S. A., Tarasov I. A., Yakovlev I. A., Maximova O. M., Shevtsov D. V., Ovchinnikov S. G.
Заглавие : Development of in situ magneto-ellipsometry for studying correlation between the optical and magneto-optical properties of ferromagnetic thin films
Коллективы : Joint European Magnetic Symposia , Russian Foundation for Basic Research [16-32-00209 mol_a, 14-02-01211, 16-42-24083]; Complex program of SB RAS [II.2P, 0358-2015-0004]; Ministry of Education and Science of the RF [16.663.2014kappa]; Grant of the President of the Russian Federation [7559.2016.2]
Место публикации : J. Phys.: Conf. Ser. - 2017. - Vol. 903. - Ст.012060. - , DOI 10.1088/1742-6596/903/1/012060
Примечания : Cited References:7. - The work was supported partly by the Russian Foundation for Basic Research Grant No. 16-32-00209 mol_a, Grant No. 14-02-01211, Grant No. 16-42-24083; the Complex program of SB RAS No II.2P, project 0358-2015-0004; the Ministry of Education and Science of the RF (State task No. 16.663.2014 kappa); Grant of the President of the Russian Federation (Scientific School No. 7559.2016.2).
Аннотация: In this work we present the way of nanostructured films study by means of magneto-ellipsometry. The method of interpretation of in situ magneto-optical ellipsometry spectra from the in situ molecular beam epitaxy setup with an integrated magneto-ellipsometric real time synthesis control is described. The method has been successfully tested on Fe/SiO2/Si nanostructures within the model of a homogeneous semi-infinite medium. As a result, the dielectric tensor components for Fe layer were calculated using a developed approach.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Tarasov I. A., Popov Z., Visotin M. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of chemical ordering on optical properties of Fe3Si epitaxial films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : EPJ Web Conf. - 2018. - Vol. 185: Moscow International Symposium on Magnetism (MISM 2017). - Ст.03014. - , DOI 10.1051/epjconf/201818503014
Примечания : Cited References: 10. - The reported study was funded by Russian Foundation for Basic Research, oG vernment of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects oN . 16 -42-243060, 16 -42-243035 and the President of the Russia Federation Program (SP-3382.2016.3 ), RFBR (Grant s oN . 16 -32-00291 and 17-42-190308) . eW also thank Solovyov L.A. for help in XRD analysis.
Предметные рубрики: Magnetic Nanostructures and Low Dimensional Magnetism
Аннотация: Optical characteristics (electron energy loss function, optical conductivity σ, permittivity ε, refractive index n, extinction coefficient k, and absorption coefficient α) of a 30 nm thick epitaxial Fe3Si iron silicide films grown at different silicon substrate temperature (26, 100, 200, 300 ˚C) were determined within E = 0.74–6.46 eV photon energy range using spectroscopic ellipsometry technique. The experimental data are compared to the optical characteristics calculated in the framework of the density functional theory using the GGA–PBE approximation. Variations of the optical characteristics spectra are discussed from the point of view of chemical ordering of DO3 type crystal structure. It is asserted that the electron energy-loss function, optical conductivity and extinction coefficient of the Fe3Si iron silicide films undergo noticeable changes in different spectral ranges over the whole spectrum between 0.74 and 6.46 eV due to variation in the chemical order. Information on the effect of chemical ordering on the optical properties obtained here allows one to carry out quick qualitative analysis of Fe3Si film crystal quality during the synthesis procedures by ellipsometry method in situ.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Tarasov I. A., Varnakov S. N., Yakovlev I. A., Solovyov L. A., Ovchinnikov S. G.
Заглавие : Effect of electron correlations on the Fe3Si and α- FeSi2 band structure and optical properties
Коллективы : Russian Fund of Basic Research [14002-00186, 13-02-01265]; President of Russia Grants [2886.2014.2, 924.2014.2]
Место публикации : Phys. Rev. B: American Physical Society, 2015. - Vol. 92, Is. 20. - Ст.205129. - ISSN 1098-0121, DOI 10.1103/PhysRevB.92.205129. - ISSN 1550-235X(eISSN)
Примечания : Cited References:69. - The theoretical part of this work was supported by Russian Fund of Basic Research, Grant No. 14002-00186 and the President of Russia Grants No. 2886.2014.2 and No. 924.2014.2 for support of Leading Scientific School. The calculations were performed with the computer resources of NRC "Kurchatov Institute" (ui2.computing.kiae.ru). The experimental work was supported by Russian Fund of Basic Research, Grant No. 13-02-01265. I.S. thanks A. Ruban for useful discussion.
Предметные рубрики: DENSITY-FUNCTIONAL THEORY
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
BASIS-SET
METALS
ABSORPTION
EMISSION
SURFACES
ALLOYS
LAYERS
Аннотация: We use the Vienna ab initio simulation package (vasp) for evaluation of the quasiparticle spectra and their spectral weights within Hedin's GW approximation (GWA) for Fe3Si and α-FeSi2 within the non-self-consistent one-shot approximation G0W0 and self-consistent scGWA with the vertex corrections in the particle-hole channel, taken in the form of two-point kernel. As input for G0W0, the band structure and wave functions evaluated within the generalized gradient corrected local-density approximation to density functional theory (GGA) have been used. The spectral weights of quasiparticles in these compounds deviate from unity everywhere and show nonmonotonic behavior in those parts of bands where the delocalized states contribute to their formation. The G0W0 and scGWA spectral weights are the same within 2%–5%. The scGWA shows a general tendency to return G0W0 bands to their GGA positions for the delocalized states, while in the flat bands it flattens even more. Variable angle spectroscopic ellipsometry measurements at T=296 K on grown single-crystalline ∼50-nm-thick films of Fe3Si on n-Si(111) wafer have been performed in the interval of energies ω∼(1.3–5) eV. The comparison of G0W0 and scGW theory with experimental real and imaginary parts of permittivity, refractive index, extinction and absorption coefficients, reflectivity, and electron energy loss function shows that both G0W0 and scGW qualitatively describe experiment correctly, the position of the low-energy peaks is described better by the scGW theory, however, its detailed structure is not observed in the experimental curves. We suggest that the angle-resolved photoemission spectroscopy experiments, which can reveal the fine details of the quasiparticle band structure and spectral weights, could help to understand (i) if the scGWA with this type of vertex correction is sufficiently good for description of these iron silicides and, possibly, (ii) why some features of calculated permittivity are not seen in optical experiments.
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