Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (3)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>A=Tarasov, I. A.$<.>)

Общее количество найденных документов : 130
Показаны документы с 1 по 20

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Ovchinnikov S. G.
Заглавие : Iron disilicide lattice thermal expansion coefficients from first principle calculations
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.III.31.04o. - P.83. - ISBN 978-5-8044-1698-1
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Smolyakov D. A., Smolyarova T. E., Tarasov I. A., Yakovlev I. A., Volochaev M. N., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Magnetic and transport properties of trilayered Fe3Si/Ge/Fe3Si hybrid structures synthesized on Si(111)
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.IV.03.07o. - P.107. - ISBN 978-5-8044-1698-1
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Volochaev M. N., Nazarova Z.I., Nazarov A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth and thermoelectric properties of composite thin films based on higher iron and manganese silicides
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.III.30.04p. - P.90. - ISBN 978-5-8044-1698-1
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Yakovlev I. A., Tarasov I. A., Velikanov D. A., Volochaev M. N., Ovchinnikov S. G., Lyashchenko S. A.
Заглавие : Synthesis and properties of Fe–Si magnetic nanoparticles for biomedical applications
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.M.O1. - P.478. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 2. - The work was funded by Krasnoyarsk Regional Fund of Science
Материалы симпозиума,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Nemtsev I. V.
Заглавие : Magneto-optical activity of Fe3Si-Au based magnetoplasmonic nanostructures
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст.E.P12. - P.441. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 3. - The reported study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project No. 18-42-243013
Материалы симпозиума,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Nemtsev I. V., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Tailoring the preferable orientation relationship and shape of α-FeSi2nanocrystals on Si(001): The impact of gold and the Si/Fe flux ratio, and the origin of α/Si boundaries
Место публикации : CrystEngComm. - 2020. - Vol. 22, Is. 23. - P.3943-3955. - ISSN 14668033 (ISSN), DOI 10.1039/d0ce00399a
Примечания : Cited References: 52. - The experimental part of the reported study was funded by the Russian Science Foundation, project no. 16-13-00060-Π. Theoretical analysis of the ORs of the α-FeSi2 nanocrystals grown was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science via research project No. 18-42-243013. We also acknowledge the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for support with carrying out the microscopic investigations. I. A. Tarasov personally thanks M. A. Visotin for continuous fruitful discussion about the energetics of the formation of the α-FeSi2 nanocrystals
Аннотация: The growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratios via molecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphology at a given Si/Fe flux ratio. α-FeSi2 free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an α(001)//Si(001) basic OR under gold-assisted conditions and an α(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of α-FeSi2 nanocrystals grown. Three types of interfaces typical for nanoplates with an α(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of α-FeSi2 nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
Смотреть статью,
WOS
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Varnakov S. N., Ovchinnikov S. G., Farle M.
Заглавие : Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.11
Примечания : Cited references: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)
Материалы конференции,
Читать в сети ИФ
Найти похожие

10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A.
Заглавие : Approach for prediction of orientation relationships and interface structures and its application to α-, β-, γ-FeSi2 and Si
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: Physics and Technology, International Symposium (28 ; 2020 ; 28 Sept.-2 Oct. ; Minsk, Belarus). Nanostructures: physics and technology: proc. 28th Int. symp. - 2020. - Ст.NC.13. - P.152-153. - ISBN 978-5-93634-066-6
Примечания : Cited References: 13
Материалы конференции,
Читать в сети ИФ
Найти похожие

11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Nemtsev I. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Modification of optical and magneto-optical response of highly textured Au3Fe1-x/Fe Janus-like nanocrystals grown on amorphous silicon dioxide surface
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.22
Примечания : The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)
Материалы конференции,
Читать в сети ИФ
Найти похожие

12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Nazarova Z. I., Nazarov A., Tarasov I. A., Visotin M. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of formation of competing phases during the growth of (Mn1-xCrx)2GaC thin films on MgO(111) with the use of effective heat of formation model and near coincidence site lattice approaches
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics
Место публикации : International workshop on functional MAX-materials (1st FunMax). - 2020. - P.19
Примечания : Cited references: 6. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)
Материалы конференции,
Читать в сети ИФ
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nazarova Z. I., Nazarov A., Tarasov I. A., Visotin M. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of formation of competing phases during the growth of (Mn1-xCrx)2GaC thin films on MgO(111) with the use of effective heat of formation model and near coincidence site lattice approaches
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Kirensky Institute of Physics, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts/ , Ин-т физики им. Л.В. Киренского. - 2020. - P19
Примечания : Cited References: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).
Материалы конференции,
Читать в сети ИФ
Найти похожие

14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lyashchenko S. A., Yakovlev I. A., Tarasov I. A., Velikanov D. A., Mihlin Y.L., Sokolov A. Е., Volochaev M. N., Jarkov S.M., Nemtcev I.V., Varnakov S. N., Ovchinnikov S. G., Lyashchenko S. A.
Заглавие : The Fe-Si-Au magnetic Janus particles for biomedical applications
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.VII.31.02p. - P.194. - ISBN 978-5-8044-1698-1
Примечания : The TEM and XPS results were obtained by a Hitachi HT7700 transmission electron microscope and a SPECS UNI-SPECS photoelectron spectrometer in the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS».
Материалы конференции,
Читать в сети ИФ
Найти похожие

15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Tarasov I. A., Yakovlev I. A., Nemtsev I. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Microsphere lithography for Fe3Si-Au magnetoplasmonic nanostructures
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: Physics and Technology, International Symposium (28 ; 2020 ; 28 Sept.-2 Oct. ; Minsk, Belarus). Nanostructures: physics and technology: proc. 28th Int. symp. - 2020. - Ст.NT.15. - P.98-99. - ISBN 978-5-93634-066-6
Примечания : Cited References: 9
Материалы конференции,
Читать в сети ИФ
Найти похожие

16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Nemtsev I. V., Varnakov S. N., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Modification of optical and magneto-optical response of highly textured Au3Fe1-x/Fe Janus-like nanocrystals grown on amorphous silicon dioxide surface
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Kirensky Institute of Physics, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts. - 2020. - P22
Примечания : The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).
Материалы конференции,
Читать в сети ИФ
Найти похожие

17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Тарасов, Иван Анатольевич, Яковлев, Иван Александрович, Варнаков, Сергей Николаевич, Жарков, Сергей Михайлович, Овчинников, Сергей Геннадьевич
Заглавие : Эллипсометрический контроль параметров многослойных наноструктур Fe/Si в процессе роста
Место публикации : Космич. аппараты и технол. - 2018. - Т. 2, № 4. - С. 220-224. - ISSN 2618-7957, DOI 10.26732/2618-7957-2018-4-220-224
Примечания : Библиогр.: 10. - Работа выполнена при финансовой поддержке программ Президиума РАН № 32, проект 0356-2018-0061, Министерства образования и науки Российской Федерации и Сибирского отделения Российской академии наук, проект II.8.70.
Ключевые слова (''Своб.индексиров.''): эллипсометрия--силициды железа--многослойные fe/si наноструктуры--ellipsometry--iron silicides--multilayer fe/si nanostructures
Аннотация: С использованием метода одноволновой лазерной эллипсометрии in situ проведено исследование процесса формирования многослойной структуры [Si/Fe57/Fe56]3/SiO2/Si(100). Были получены сведения об оптических и структурных свойствах данной структуры. Изменение морфологии поверхности растущих слоев и их оптических характеристик оказываются неидентичными для случаев осаждения железа на поверхность слоя кремния и осаждения кремния на поверхность слоя железа. Полученные профили оптических постоянных свидетельствуют об увеличении толщины переходных слоев, содержащих твердые растворы «железо-кремний» и силициды. Характер изменения оптических постоянных усложняется с каждым последующим слоем железа, осаждаемым на поверхность кремния. Поведение профилей n и k, соответствующих формированию кремниевых слоев, имеет более простой характер по сравнению с поведением подобных профилей железа. Эти профили имеют лишь некоторые особенности на начальных этапах роста и соответствуют формированию аморфных слоев кремния. Полученные данные согласуются с данными просвечивающей электронной микроскопии.Using in situ single-wave laser ellipsometry method, the formation of the [Si/Fe57/Fe56]3/SiO2/Si(100) multilayer structure was studied. Information about the optical and structural properties of this structure was obtained. The change in the morphology of the surface of the growing layers and their optical characteristics are not identical for the cases of iron deposition on the surface of the silicon layer and deposition of silicon on the surface of the iron layer. The refractive index and coefficient of absorption indicate an increase of the thickness of transition layers containing iron-silicon solid solutions and silicides. The nature of the change in the optical constants become more complicated with each subsequent iron layer deposited on the silicon surface. The behavior of n and k profiles corresponding to the formation of silicon layers is simpler than the behavior of similar iron profiles. These profiles have only some features at the initial stages of growth and correspond to the formation of amorphous silicon layers. The obtained data are consistent with the data of transmission electron microscopy.
Смотреть статью,
РИНЦ,
Читать в сети ИФ
Найти похожие

18.

Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Tarasov I. A., Popov Z., Visotin M. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of chemical ordering on optical properties of Fe3Si epitaxial films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : EPJ Web Conf. - 2018. - Vol. 185: Moscow International Symposium on Magnetism (MISM 2017). - Ст.03014. - , DOI 10.1051/epjconf/201818503014
Примечания : Cited References: 10. - The reported study was funded by Russian Foundation for Basic Research, oG vernment of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects oN . 16 -42-243060, 16 -42-243035 and the President of the Russia Federation Program (SP-3382.2016.3 ), RFBR (Grant s oN . 16 -32-00291 and 17-42-190308) . eW also thank Solovyov L.A. for help in XRD analysis.
Предметные рубрики: Magnetic Nanostructures and Low Dimensional Magnetism
Аннотация: Optical characteristics (electron energy loss function, optical conductivity σ, permittivity ε, refractive index n, extinction coefficient k, and absorption coefficient α) of a 30 nm thick epitaxial Fe3Si iron silicide films grown at different silicon substrate temperature (26, 100, 200, 300 ˚C) were determined within E = 0.74–6.46 eV photon energy range using spectroscopic ellipsometry technique. The experimental data are compared to the optical characteristics calculated in the framework of the density functional theory using the GGA–PBE approximation. Variations of the optical characteristics spectra are discussed from the point of view of chemical ordering of DO3 type crystal structure. It is asserted that the electron energy-loss function, optical conductivity and extinction coefficient of the Fe3Si iron silicide films undergo noticeable changes in different spectral ranges over the whole spectrum between 0.74 and 6.46 eV due to variation in the chemical order. Information on the effect of chemical ordering on the optical properties obtained here allows one to carry out quick qualitative analysis of Fe3Si film crystal quality during the synthesis procedures by ellipsometry method in situ.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Rautskii M. V., Bondarev I. A., Smolyakov D. A., Tarasov I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Baron F. A., Volkov N. V.
Заглавие : Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
Место публикации : Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст.035024. - ISSN 0268-1242, DOI 10.1088/1361-6641/ab0327. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies"
Предметные рубрики: ALLOYS
Ключевые слова (''Своб.индексиров.''): spin accumulation--interface states--hybrid structures--hanle effect--iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Yakovlev I. A., Kosyrev N. N., Komarov V. A., Nemtsev I. V., Varnakov S. N., Patrin G. S., Ovchinnikov S. G.
Заглавие : Growth of Textured Au-Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface
Коллективы : International Symposium "Nanostructures: Physics and Technology" , Russian Foundation for Basic Research; government of the region of the Russian Federation [18-42-243013]; Russian Federation [CPi-2796.2018.1]
Место публикации : Semiconductors. - 2018. - Vol. 52, Is. 16. - P.2073-2077. - ISSN 1063-7826, DOI 10.1134/S1063782618160364. - ISSN 1090-6479(eISSN)
Примечания : Cited References: 19. - The reported research was funded by Russian Foundation for Basic Research and the government of the region of the Russian Federation, grant no. 18-42-243013, the Program of the President of the Russian Federation for the support of young scientist (C Pi-2796.2018.1). We also thank L.A. Solovyov for his asistance in XRD analysis.
Предметные рубрики: INTERMETALLIC AU3FE1-X
MAGNETIC-PROPERTIES
FECU NANOPARTICLES
Аннотация: We present in this report the route to produce highly-textured Au3Fe(111)/Fe(110) hybrid nanocrystals on an amorphous surface of SiO2/Si by molecular beam epitaxy. By controlling the quantity of Au atoms deposited onto the SiO2/Si it is possible to tune the average lateral size of resultant Au-Fe hybrid nanocrystals from 10-20 nm up to 100-150 nm at the same Fe nominal thickness deposited. This process is sensitive to the initial density and size of Au islands. Examination of Au-Fe hybrid nanocrystals obtained was carried out using X-ray diffraction, transmission and scanning electron microscopy, reflection high energy electron diffraction, and Kerr effect methods.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие