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Belyaev, B. A.
Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer / B. A. Belyaev, A. V. Zotov, P. N. Solovev // Int. Sib. Conf. on Control and Communicat. : Proc. - 2013. - Conference code: 102462. Cт. 6693573, DOI 10.1109/SIBCON.2013.6693573. - Cited References: 13 . - ISSN 978-1-479

РУБ Engineering, Electrical & Electronic + Telecommunications
Рубрики:
EXCHANGE-BIAS
DEPENDENCE
Кл.слова (ненормированные):
absorption spectrum -- exchange bias -- micromagnetic modeling
Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.

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Доп.точки доступа:
Zotov, A. V.; Solovev, P. N.; Беляев, Борис Афанасьевич; International Siberian Conference on Control and Communications(10 ; 2013 ; Sept. 12-13 ; Krasnoyarsk)
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Bias-current and optically driven transport properties of the hybrid Fe/Si02/p-Si structures [Text] / N. V. Volkov, E. V., Eremin, A. S. Tarasov [et al.] // Moscow Int. Symp. on Magnet. (MISM-2011) : Book of abstracts. - 2011. - Ст. 22PO-I-10. - P. 109. - Библиогр.: 1. - This study was supported by the Russian Foundation for Basic research, project no. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program 21.1; the Division for Physical Sciences of the Russian Academy of Sciences, program 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, projects nos. 5 and 134; and the Federal target program, State contract NK-556P_15.

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Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.,; Tarasov, A.S.; Varnakov, S.N.; Ovchinnikov, S.G.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure -- Mis transition -- Photoelectric effect -- Schottky barrier -- Channel switching -- Comparative analysis -- Electron hole pairs -- Fe films -- Fe layer -- Ferromagnetic films -- Hybrid structure -- Optical effects -- Optical radiations -- Photogeneration -- Planar geometries -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Critical currents -- Interfaces (materials) -- Magnetic materials -- Photoelectricity -- Schottky barrier diodes -- Silicon -- Switching circuits -- Transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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    Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2015. - Vol. 383. - P. 69-72, DOI 10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
   Перевод заглавия: Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурах

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SILICON
SPINTRONICS
FIELD
Кл.слова (ненормированные):
Spintronics -- Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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Bias-voltage-controlled AC and DC magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.] // Moscow Int. Symp. on Magnet. (MISM-2014) : 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст. 1RP-A-10. - P. 315 . - ISBN 978-5-91978-025-0

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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Calculation of thermostable directions and the influence of bias electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates / S. I. Burkov [et al.] // Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст. 5935458. - P. 1853-1856, DOI 10.1109/ULTSYM.2010.5935458 . - ISBN 1051. - ISBN 9781457703829
Кл.слова (ненормированные):
dc electric field influence -- Lamb wave -- SH-wave -- thermostability -- Bias electric fields -- Dc electric field -- Lamb Wave -- Langasite crystals -- Langasites -- SH wave -- Single-crystal plates -- Temperature coefficient -- thermostability -- Computer simulation -- Electromechanical coupling -- Shear waves -- Single crystals -- Ultrasonics -- Electric fields -- Electric fields -- Shear waves
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.

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Доп.точки доступа:
Burkov, S. I.; Zolotova, O. P.; Turchin, P. P.; Sorokin, B. P.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2010 ; Oct. ; 11-14 ; San Diego, CA)
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Coercivity and exchange bias in magnetic sandwich structure prepared by chemical deposition / A. V. Chzhan [et al.] // Solid State Phenomena : Selected, peer reviewed papers. - 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P. 463-465, DOI 10.4028/www.scientific.net/SSP.190.463. - Cited References: 5 . - ISSN 1662-9779. - ISSN 978-30378

РУБ Materials Science, Multidisciplinary + Physics, Multidisciplinary

Кл.слова (ненормированные):
sandwich structure -- exchange bias -- coercivity -- magnetization reversal
Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.

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Доп.точки доступа:
Perov, N. \ed.\; Rodionova, V. \ed.\; Chzhan, A. V.; Чжан, Анатолий Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kiparisov, S. Ya.; Кипарисов, Семен Яковлевич; Seredkin, V. A.; Середкин, Виталий Александрович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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Complex study of magnetization reversal mechanisms of FeNi/FeMn bilayers depending on growth conditions / C. Gritsenko, V. Lepalovskij, M. Volochaev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 7. - Ст. 1178, DOI 10.3390/nano12071178. - Cited References: 44. - This work has been supported by the grant of the Slovak Research and Development Agency under the contract No APVV-20-0324. This work was in part financially supported by the Ministry of Science and Higher Education of the Russian Federation, Subject of the state task No. FEUZ-2020-0051 . - ISSN 2079-4991
Кл.слова (ненормированные):
exchange bias -- exchange spring -- AFM grain size -- substrate temperature -- hysteresis loop asymmetry -- magnetization reversal
Аннотация: Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.

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Держатели документа:
Research and Education Center “Smart Materials and Biomedical Applications”, Immanuel Kant Baltic Federal University, Gaidara str., 6, Kaliningrad, 236041, Russian Federation
Solid State Magnetism Department, Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, 620002, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Institute of Physics, Faculty of Science, Pavol Jozef Safarik University, Park Angelinum 9, Kosice, 040 01, Slovakia
Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg, 47057, Germany
Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, Gdansk, 80233, Poland
Materials Science and Metallurgy Shared Use Research and Development Center, National University of Science and Technology MISiS, Moscow, 119049, Russian Federation

Доп.точки доступа:
Gritsenko, C.; Lepalovskij, V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Komanicky, V.; Gorkovenko, A.; Pazniak, H.; Gazda, M.; Andreev, N.; Rodionova, V.
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Effect of the nonmagnetic layer in a Co/Cu/CoO trilayer structure on the exchange coupling in it / P. D. Kim [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 4. - P. 612-616, DOI 10.1134/S1063776111030058. - Cited References: 21 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
SPACER LAYER
BIAS
ANISOTROPY
Кл.слова (ненормированные):
Cobalt layers -- Copper layer -- Exchange bias -- Interlayer exchange coupling -- Nonmagnetic layers -- Oscillation amplitude -- Temperature dependence -- Temperature range -- Trilayer film -- Trilayer structure -- Cobalt -- Crystal structure -- Epitaxial films -- Hysteresis -- Hysteresis loops -- Magnetic materials -- Exchange coupling
Аннотация: The dependence of the exchange bias of epitaxial single-crystal Co/Cu/CoO trilayer films on the copper layer thickness and temperature is studied. The exchange bias of the hysteresis loops of the ferromagnetic cobalt layer as a function of the copper layer thickness is found to have a well-pronounced oscillating character. The oscillations manifest themselves over the entire temperature range in which an exchange bias takes place (77-220 K). The complex variation of the oscillation amplitude with the nonmagnetic layer thickness can be explained by the superposition of two interlayer exchange coupling oscillation periods (lambda(1) a parts per thousand 10-11 , lambda(2) a parts per thousand 20 ) having differentamplitudes and temperature dependences.

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Держатели документа:
[Kim, P. D.
Patrin, G. S.
Turpanov, I. A.
Khalyapin, D. L.
Marushchenko, D. A.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Yu, S. C.
Song, Yu. Y.] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Yu, S. C.
Song, Yu. Y.] Chungbuk Natl Univ, Phys Program BK21, Cheongju 361763, South Korea
[Patrin, G. S.
Khalyapin, D. L.
Marushchenko, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
BK21 Physics Program, Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Kim, P. D.; Ким, Пётр Дементьевич; Yu, S. C.; Patrin, G. S.; Патрин, Геннадий Семёнович; Song, Y. Y.; Turpanov, I. A.; Турпанов, Игорь Александрович; Khalyapin, D. L.; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич
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10.

Effect of the Semiconductor Spacer on Positive Exchange Bias in the CoNi/Si/FeNi Three-Layer Structure / G. S. Patrin [et al.] // JETP Letters. - 2019. - Vol. 109, Is. 5. - P. 320-324, DOI 10.1134/S0021364019050126. - Cited References: 26. - This work was supported by the Russian Foundation for Basic Research (project no. 18-02-00161-a). . - ISSN 0021-3640. - ISSN 1090-6487
Рубрики:
MEDIA
Аннотация: Films consisting of a hard magnetic ferromagnet CoNi and a soft magnetic ferromagnet FeNi interacting through a nonmagnetic Si semiconductor spacer are experimentally studied. The temperature and field dependences of the magnetic properties of film structures with different silicon thicknesses are examined. It is found that the multilayer structure has the properties inherent in magnetic springs and exhibits positive exchange bias as a function of the silicon thickness.

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Публикация на русском языке Влияние полупроводниковой прослойки на эффект положительного обменного смещения в трехслойной структуре CoNi/Si/FeNi [Текст] / Г. С. Патрин [и др.] // Письма в ЖЭТФ. - 2019. - Т. 109 Вып. 5-6. - С. 325-330

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Fed Res Ctr KSC, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Yushkov, V. I.; Юшков, Василий Иванович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Patrin, K. G.; Yurkin, G. Yu.; Zhivaya, Ya A.; Russian Foundation for Basic Research [18-02-00161-a]
}
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