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1.
Nonlinear electromechanical nronerties
and acoustic waves propagation in la3Ga5SiO14 single crystals under the.
bias
static fields / K. S. Aleksandrov [и др.]> // Izv RAN Ser Fiz. - 1996. -
Vol. 60
,
Is. 10
. - P. 103-105 . - ISSN 0367-6765
Scopus
Доп.точки доступа:
Aleksandrov, K. S.; Turchin, P. P.; Sorokin, B. P.; Burkov, S. I.
}
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2.
Gorban, A.
Codon usage trajectories and 7-cluster structure of 143 complete bacterial genornic sequences / A. . Gorban, T. . Popova, A. . Zinovyev> // Physica A. - 2005. -
Vol. 353
. - P. 365-387,
DOI
10.1016/j.physa.2005.01.043. - Cited References: 46 . - ISSN 0378-4371
РУБ
Physics, Multidisciplinary
Рубрики:
DNA-BASE COMPOSITION
ASYMMETRIC SUBSTITUTION PATTERNS
PROTEIN-CODING REGIONS
MICROBIAL GENOMES
GENE IDENTIFICATION
MARKOV-MODELS
G+C CONTENT
BIAS
PREDICTION
SELECTION
Кл.слова (ненормированные):
genome
--
cluster
--
codon usage
--
correlations
--
entropy
--
mean field
--
Cluster
--
Codon usage
--
Correlations
--
Entropy
--
Genome
--
Mean field
--
Approximation theory
--
Correlation methods
--
Database systems
--
Entropy
--
Functions
--
Genes
--
Mathematical models
--
Clusters
--
Codon usage
--
Genomes
--
Mean field
--
Bacteria
Аннотация:
Three results are presented. First, we prove the existence of a universal 7-cluster structure in all 143 completely sequenced bacterial genomes available in Genbank in August 2004, and explained its properties. The 7-cluster structure is responsible for the main part of sequence heterogeneity in bacterial genomes. In this sense, our 7 clusters is the basic model of bacterial genome sequence. We demonstrated that there are four basic "pure" types of this model, observed in nature: "parallel triangles", "perpendicular triangles", degenerated case and the flower-like type. Second, we answered the question: how big are the position-specific information and the contribution connected with correlations between nucleotide. The accuracy of the mean-field (context-free) approximation is estimated for bacterial genomes. We show that codon us-age of bacterial genomes is a multi-linear function of their genomic G+C-content with high accuracy (more precisely, by two similar functions, one for eubacterial genomes and the other one for archaea). Description of these two codon-usage trajectories is the third result. All 143 cluster animated 3D-scatters are collected in a database and is made available on our web-site: http://www.ihes.fr/similar to zinovyev/7clusters. (c) 2005 Elsevier B.V. All rights reserved.
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Держатели документа:
Univ Leicester, Dept Math, Leicester LE1 7RH, Leics, England
RAS, SB, Inst Computat Modelling, Krasnoyarsk, Russia
Bures Sur Yvette & Bioinformat Serv Inst Curie, Inst Hautes Etudes Sci, Paris, France
ИВМ СО РАН
Department of Mathematics, University of Leicester, Leicester, University Road, Leicester LE1 7RH, United Kingdom
Institute of Computational Modelling, SB RAS, Krasnoyarsk, Russian Federation
Institut des Hautes Etudes Scientifiques, Bures-sur-Yvette and Bioinformatics Service of Institut Curie, Paris, France
Доп.точки доступа:
Popova, T.; Zinovyev, A.
}
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3.
Reflection and refraction
of bulk acoustic waves in piezoelectric crystals under the action of
bias
electric field and uniaxial pressure / S. I. Burkov [et al.]> //
Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст. 4803254. - P. 2161-2164,
DOI
10.1109/ULTSYM.2008.0535 . - ISBN 1051-0117
Кл.слова (ненормированные):
Bias
electric field
--
Bulk elastic wave
--
Mechanical stress
--
Piezoelectric crystal
--
Reflection
--
Refraction
--
Bias
electric field
--
Bulk acoustic waves
--
Bulk elastic wave
--
Mechanical stress
--
Piezoelectric crystal
--
Piezoelectric crystals
--
Uniaxial pressures
--
Acoustic wave reflection
--
Acoustics
--
Crystals
--
Elastic waves
--
Elasticity
--
Electric field measurement
--
Electric fields
--
Piezoelectric materials
--
Piezoelectric transducers
--
Piezoelectricity
--
Refraction
--
Soil structure interactions
--
Stresses
Аннотация:
Main theory results concerned with bulk elastic wave reflection/refraction on the boundary between two piezoelectric crystals subjected to the action of
bias
electric field or mechanical stress have presented. Some calculations for LiNbO3 and Bi12GeO20 crystals have made. В©2008 IEEE.
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Доп.точки доступа:
Burkov, S. I.; Sorokin, B. P.; Karpovich, A. A.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2008 ; Nov. ; 2-5 ; Beijing, China)
}
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4.
The magnetic-field-driven effect
of microwave detection in a manganite granular system / N. V. Volkov [et al.]> // J. Phys. D. - 2008. -
Vol. 41
,
Is. 1
. - Ст. 15004,
DOI
10.1088/0022-3727/41/1/015004. - Cited References: 24 . - ISSN 0022-3727
РУБ
Physics, Applied
Рубрики:
IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Кл.слова (ненормированные):
Bias
currents
--
Curie temperature
--
Electric power generation
--
Granular materials
--
Magnetic field effects
--
Microwave irradiation
--
Voltage measurement
--
Direct current voltage
--
Magnetic tunnel junctions
--
Metal insulator metal junctions
--
Nonmagnetic metals
--
Manganites
Аннотация:
We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a
bias
current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Shaykhutdinov, K. A.
Tsikalov, V. S.
Petrov, M. I.
Balaev, D. A.
Semenov, S. V.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Tsikalov, V. S.; Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Semenov, S. V.; Семенов, Сергей Васильевич
}
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5.
Observation of nonmonotonic
oscillatory interlayer exchange coupling in Co/Cu/CoO films with varying Cu spacer thickness / Y. Y. Song [et al.]> // J. Appl. Phys. - 2008. -
Vol. 103
: 52nd Annual Conference on Magnetism and Magnetic Materials (NOV 05-09, 2007, Tampa, FL),
Is. 7
. - Ст. 07C112,
DOI
10.1063/1.2831390. - Cited References: 20 . - ISSN 0021-8979
РУБ
Physics, Applied
Рубрики:
GIANT MAGNETORESISTANCE
MAGNETIC-ANISOTROPY
LAYERS
BIAS
SUPERLATTICES
MULTILAYERS
TRILAYERS
Кл.слова (ненормированные):
Copper
--
Film thickness
--
Thermal effects
--
CoCuCoO films
--
Oscillatory interlayer exchange coupling.
--
Metallic films
Аннотация:
We report our experimental observation of interlayer exchange coupling phenomena in CoO/Cu/Co trilayers with systematic variation of Cu spacer layer thickness as well as temperature. It has been found that there exists a clear indication of nonmonotonically varying oscillatory interlayer exchange coupling. The amplitude of oscillation increases, reaches to the maximum, and decreases with increasing Cu spacer thickness from 1 to 16 atomic layers for all temperature ranges between 70 and 200 K. (c) 2008 American Institute of Physics.
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Держатели документа:
[Song, Young-Yeal
Kim, Dong-Hyun
Yu, Seong-Cho] Chungbuk Natl Univ, BK21 Phys Program, Cheongju 361763, South Korea
[Song, Young-Yeal
Kim, Dong-Hyun
Yu, Seong-Cho] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Kim, Petr D.
Turpanov, Igor Alexandrovic
Lee, Liudmila Alexeevna] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Buzmakov, Afanasy Egorovic] Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
[Lee, Kyu Won] Korea Res Inst Stand & Sci, Taejon 305340, South Korea
ИФ СО РАН
BK21 Physics Program, Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Kirensky Institute of Physics SB RAS, Academgorodok, 50, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk State Technical University, Kirenskogo, 26, Krasnoyarsk, 660074, Russian Federation
Korea Research Institute of Standard and Science, Taejon 305-340, South Korea
Доп.точки доступа:
Song, Y. Y.; Kim, D. H.; Yu, S. C.; Kim, P. D.; Ким, Пётр Дементьевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Lee, L. A.; Ли, Людмила Алексеевна; Buzmakov, A. E.; Lee, K. W.
}
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6.
Calculation of thermostable
directions and the influence of
bias
electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates / S. I. Burkov [et al.]> // Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст. 5935458. - P. 1853-1856,
DOI
10.1109/ULTSYM.2010.5935458 . - ISBN 1051. - ISBN 9781457703829
Кл.слова (ненормированные):
dc electric field influence
--
Lamb wave
--
SH-wave
--
thermostability
--
Bias
electric fields
--
Dc electric field
--
Lamb Wave
--
Langasite crystals
--
Langasites
--
SH wave
--
Single-crystal plates
--
Temperature coefficient
--
thermostability
--
Computer simulation
--
Electromechanical coupling
--
Shear waves
--
Single crystals
--
Ultrasonics
--
Electric fields
--
Electric fields
--
Shear waves
Аннотация:
Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.
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Доп.точки доступа:
Burkov, S. I.; Zolotova, O. P.; Turchin, P. P.; Sorokin, B. P.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2010 ; Oct. ; 11-14 ; San Diego, CA)
}
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7.
Magnetic-field- and
bias
-sensitive
conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.]> // Journal of Applied Physics. - 2011. -
Т. 109
,
№ 12
. - P123924,
DOI
10.1063/1.3600056 . - ISSN 0021-8979. - ISSN 1089-7550
РИНЦ
Держатели документа:
Kirensky Institute of Physics,Russian Academy of Sciences,Siberian Branch
Siberian State Aerospace University
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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8.
Peculiarities of magnetic
properties of Ni-Ge layered films / A. V. Chernichenko [et al.]> // TRENDS IN MAGNETISM. - 2011. -
Vol. 168-169
. - P261-264,
DOI
10.4028/www.scientific.net/SSP.168-169.261 . - ISSN 1012-0394
Кл.слова (ненормированные):
exchange
bias
effect
--
magnetic properties
--
ni and ge mutual diffusion
--
ni-ge layer structures
--
surface morphology
--
antiferromagnetism
--
diffusion
--
germanium
--
magnetic properties
--
magnetization
--
morphology
--
phase interfaces
--
solids
--
germanium
--
magnetic properties
--
magnetization
--
nickel
--
surface morphology
--
temperature distribution
--
antiferromagnetic phase
--
exchange
bias
effects
--
ge films
--
layered films
--
low temperatures
--
magnetization temperature
--
mutual diffusion
--
ni and ge mutual diffusion
--
ni-ge layer structures
--
ge layers
--
surface morphology
--
magnetism
Аннотация:
The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange
bias
effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.
Scopus
,
eLibrary
,
WOS
Держатели документа:
Kirensky Institute of Physics, SB, RAS, Academgorodok, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Доп.точки доступа:
Chernichenko, A. V.; Черниченко, Ангелина Виталиевна; Edelman, I. S.; Эдельман, Ирина Самсоновна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Greben'kova, Yu. E.; Гребенькова, Юлия Эрнестовна
}
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9.
Bias
-current and optically
driven transport properties of the hybrid Fe/Si02/p-Si structures [Text] / N. V. Volkov, E. V., Eremin, A. S. Tarasov [et al.]> //
Moscow Int. Symp. on Magnet. (MISM-2011) : Book of abstracts. - 2011. - Ст. 22PO-I-10. - P. 109. - Библиогр.: 1. - This study was supported by the Russian Foundation for Basic research, project no. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program 21.1; the Division for Physical Sciences of the Russian Academy of Sciences, program 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, projects nos. 5 and 134; and the Federal target program, State contract NK-556P_15.
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Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.,; Tarasov, A.S.; Varnakov, S.N.; Ovchinnikov, S.G.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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10.
Magnetic Tunnel Structures:
Transport Properties Controlled by
Bias
, Magnetic Field, Micro- wave and Optical Radiation [Text] / N. V. Volkov, E. V. Eremin, A. S. Tarasov [et al.]> //
Moscow Int. Symp. on Magnet. (MISM-2011) : Book of abstracts. - 2011. - Ст. 25RP-H-8. - P. 911-912. - Библиогр.: 2. - This study was supported by the RFBR, project no. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program 21.1; the Division for Physical Sciences of the Russian Academy of Sciences, program 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, projects nos. 5 and 134; and the Federal target program, State contract NK-556P_15
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Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.; Tarasov, A.S.; Varnakov, S.N.; Ovchinnikov, S.G.; Patrin, G.S.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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11.
Effect of the
nonmagnetic layer in a Co/Cu/CoO trilayer structure on the exchange coupling in it / P. D. Kim [et al.]> // J. Exp. Theor. Phys. - 2011. -
Vol. 112
,
Is. 4
. - P. 612-616,
DOI
10.1134/S1063776111030058. - Cited References: 21 . - ISSN 1063-7761
РУБ
Physics, Multidisciplinary
Рубрики:
SPACER LAYER
BIAS
ANISOTROPY
Кл.слова (ненормированные):
Cobalt layers
--
Copper layer
--
Exchange
bias
--
Interlayer exchange coupling
--
Nonmagnetic layers
--
Oscillation amplitude
--
Temperature dependence
--
Temperature range
--
Trilayer film
--
Trilayer structure
--
Cobalt
--
Crystal structure
--
Epitaxial films
--
Hysteresis
--
Hysteresis loops
--
Magnetic materials
--
Exchange coupling
Аннотация:
The dependence of the exchange
bias
of epitaxial single-crystal Co/Cu/CoO trilayer films on the copper layer thickness and temperature is studied. The exchange
bias
of the hysteresis loops of the ferromagnetic cobalt layer as a function of the copper layer thickness is found to have a well-pronounced oscillating character. The oscillations manifest themselves over the entire temperature range in which an exchange
bias
takes place (77-220 K). The complex variation of the oscillation amplitude with the nonmagnetic layer thickness can be explained by the superposition of two interlayer exchange coupling oscillation periods (lambda(1) a parts per thousand 10-11 , lambda(2) a parts per thousand 20 ) having differentamplitudes and temperature dependences.
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Держатели документа:
[Kim, P. D.
Patrin, G. S.
Turpanov, I. A.
Khalyapin, D. L.
Marushchenko, D. A.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Yu, S. C.
Song, Yu. Y.] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Yu, S. C.
Song, Yu. Y.] Chungbuk Natl Univ, Phys Program BK21, Cheongju 361763, South Korea
[Patrin, G. S.
Khalyapin, D. L.
Marushchenko, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
BK21 Physics Program, Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Доп.точки доступа:
Kim, P. D.; Ким, Пётр Дементьевич; Yu, S. C.; Patrin, G. S.; Патрин, Геннадий Семёнович; Song, Y. Y.; Turpanov, I. A.; Турпанов, Игорь Александрович; Khalyapin, D. L.; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич
}
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12.
Magnetic-field- and
bias
-sensitive
conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.]> // J. Appl. Phys. - 2011. -
Vol. 109
,
Is. 12
. - Ст. 123924. - P. ,
DOI
10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching
--
Comparative analysis
--
Fe films
--
Fe layer
--
Ferromagnetic films
--
High temperature
--
Hybrid structure
--
Inversion layer
--
Metal-insulator-semiconductors
--
Negative magneto-resistance
--
Planar geometries
--
Positive magnetoresistance
--
Schottky barriers
--
Semiconductor substrate
--
Temperature variation
--
Weak localization
--
Critical currents
--
Electric resistance
--
Ferromagnetic materials
--
Geometry
--
Magnetic fields
--
Magnetoelectronics
--
Magnetoresistance
--
Metal insulator boundaries
--
Metal insulator transition
--
MIS devices
--
Schottky barrier diodes
--
Silicon
--
Silicon compounds
--
Switching circuits
--
Transport properties
--
Semiconducting silicon
Аннотация:
Pronounced magnetic-field- and
bias
-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and
bias
. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a
bias
current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and
bias
. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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13.
Coercivity and exchange
bias
in magnetic sandwich structure prepared by chemical deposition / A. V. Chzhan [et al.]> // Solid State Phenomena : Selected, peer reviewed papers. - 2012. -
Vol. 190
: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P. 463-465,
DOI
10.4028/www.scientific.net/SSP.190.463. - Cited References: 5 . - ISSN 1662-9779. - ISSN 978-30378
РУБ
Materials Science, Multidisciplinary + Physics, Multidisciplinary
Кл.слова (ненормированные):
sandwich structure
--
exchange
bias
--
coercivity
--
magnetization reversal
Аннотация:
Exchange
bias
and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.
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Доп.точки доступа:
Perov, N. \ed.\; Rodionova, V. \ed.\; Chzhan, A. V.; Чжан, Анатолий Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kiparisov, S. Ya.; Кипарисов, Семен Яковлевич; Seredkin, V. A.; Середкин, Виталий Александрович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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14.
Bias
-current and optically
driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.]> // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. -
Vol. 190
. - P. 526-529,
DOI
10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure
--
Mis transition
--
Photoelectric effect
--
Schottky barrier
--
Channel switching
--
Comparative analysis
--
Electron hole pairs
--
Fe films
--
Fe layer
--
Ferromagnetic films
--
Hybrid structure
--
Optical effects
--
Optical radiations
--
Photogeneration
--
Planar geometries
--
Schottky barriers
--
Semiconductor substrate
--
Temperature variation
--
Critical currents
--
Interfaces (materials)
--
Magnetic materials
--
Photoelectricity
--
Schottky barrier diodes
--
Silicon
--
Switching circuits
--
Transport properties
Аннотация:
Pronounced optical- and
bias
-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and
bias
. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a
bias
current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
Scopus
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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15.
Magnetic tunnel structures:
Transport properties controlled by
bias
, magnetic field, and microwave and optical radiation / N. V. Volkov [et al.]> //
J. Magn. Magn. Mater. - 2012. -
Vol. 324
,
Is. 21
. - P. 3579-3583,
DOI
10.1016/j.jmmm.2012.02.095. - Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15). . - ISSN 0304-8853
РУБ
Physics, Condensed Matter + Materials Science, Multidisciplinary
Кл.слова (ненормированные):
Spintronics
--
Magnetic tunnel junction
--
High-frequency rectification
--
Photoelectric effect
Аннотация:
Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes
bias
-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a
bias
, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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16.
Микромагнитное моделирование и
численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик / Б. А. Беляев [и др.]> // Изв. вузов. Физика. - 2013. -
Т. 56
,
№ 8/2
. - С. 230-232. - Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
Перевод заглавия:
Micromagnetic simulation and numerical analysis of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayer
Кл.слова (ненормированные):
микромагнитное моделирование
--
ферромагнетик/антиферромагнетик
--
петля гистерезиса
--
обменное смещение
--
коэрцитивная сила
--
micromagnetic simulation
--
coercivity
--
ferromagnetic/antiferromagnetic
--
hysteresis loop
--
exchange
bias
Аннотация:
На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.
On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange
bias
field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.
Держатели документа:
Институт физики им. Л.В. Киренского СО РАН
Доп.точки доступа:
Изотов, Андрей Викторович; Izotov, A.V.; Беляев, Борис Афанасьевич; Belyaev, B. A.; Соловьев, Платон Николаевич; Волошин, Александр Сергеевич; Voloshin, A. S.
}
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17.
Belyaev, B. A.
Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer / B. A. Belyaev, A. V. Zotov, P. N. Solovev> //
Int. Sib. Conf. on Control and Communicat. : Proc. - 2013. - Conference code: 102462. Cт. 6693573,
DOI
10.1109/SIBCON.2013.6693573. - Cited References: 13 . - ISSN 978-1-479
РУБ
Engineering, Electrical & Electronic + Telecommunications
Рубрики:
EXCHANGE-
BIAS
DEPENDENCE
Кл.слова (ненормированные):
absorption spectrum
--
exchange
bias
--
micromagnetic modeling
Аннотация:
Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange
bias
field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.
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Доп.точки доступа:
Zotov, A. V.; Solovev, P. N.; Беляев, Борис Афанасьевич; International Siberian Conference on Control and Communications(10 ; 2013 ; Sept. 12-13 ; Krasnoyarsk)
}
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18.
The
bias
-controlled giant
magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier / N. V. Volkov [et al.]> // Appl. Phys. Lett. - 2014. -
Vol. 104
,
Is. 22
. - Ст. 222406,
DOI
10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118
РУБ
Physics, Applied
Рубрики:
MAGNETO-IMPEDANCE
FILMS
Аннотация:
We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying
bias
to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
}
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19.
The investigation of
long-range exchange interaction in spin valve structures / P. D. Kim [et al.]> // Solid State Phenom. : Selected, peer reviewed papers. - 2014. -
Vol. 215
: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 489-494,
DOI
10.4028/www.scientific.net/SSP.215.489. - Cited References: 17 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Exchange
bias
--
Exchange interaction
--
Spin valve
--
Thin films
Аннотация:
Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.
Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Kim, P. D.; Ким, Пётр Дементьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич; Lee, L. A.; Ли, Людмила Алексеевна; Rudenko, T. V.; Руденко, Т. В.; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
}
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20.
Bias
-voltage-controlled AC and
DC magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.]> //
Moscow Int. Symp. on Magnet. (MISM-2014) : 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст. 1RP-A-10. - P. 315 . - ISBN 978-5-91978-025-0
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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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