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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Патрин, Геннадий Семёнович, Кобяков, Александр Васильевич, Юшков, Василий Иванович, Анисимов И. О., Жарков, Сергей Михайлович, Семенов, Сергей Васильевич, Моисеенко, Евгений Тимофеевич
Заглавие : Эффекты обменного смещения и магнитной близости в трехслойных пленках FeNi/V2O3/FeNi
Коллективы : Байкальская международная конференция "Магнитные материалы. Новые технологии", "Магнитные материалы. Новые технологии", Байкальская международная конференция, "Magnetic materials. New tecnologies", Baikal International Conference, Иркутский государственный университет
Место публикации : Магнитные материалы. Новые технологии: тез. докл. IX Байкал. междунар. конф. BICMM-2023/ чл. прогр. ком.: S. S. Aplesnin [et al.] ; чл. орг. ком. R. S. Iskhakov [et al.]. - Иркутск, 2023. - С. 71-72. - ISBN 978-5-962402178-0, DOI 10.26516/978-5-9624-2178-0.2023.1-207
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Изотов, Андрей Викторович, Беляев, Борис Афанасьевич, Соловьев, Платон Николаевич, Волошин, Александр Сергеевич
Заглавие : Микромагнитное моделирование и численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик
Место публикации : Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232
Примечания : Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
Ключевые слова (''Своб.индексиров.''): микромагнитное моделирование--ферромагнетик/антиферромагнетик--петля гистерезиса--обменное смещение--коэрцитивная сила--micromagnetic simulation--coercivity--ferromagnetic/antiferromagnetic--hysteresis loop--exchange bias
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Yushkov V. I., Yarikov S. A., Volochaev M. N., Zhivaya Ya. A.
Заглавие : The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
Коллективы : Euro-Asian Symposium "Trends in MAGnetism"
Место публикации : J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст.012028. - ISSN 1742-6588, DOI 10.1088/1742-6596/1389/1/012028. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 13. - These studies are conducted with financial support from the Russian Foundation for Basic Research (grant No.18-02-00161-a).
Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Baron F. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device
Место публикации : J. Surf. Invest.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 9, Is. 5. - P.984-994. - ISSN 1027-4510, DOI 10.1134/S1027451015050432
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043.
Ключевые слова (''Своб.индексиров.''): magnetoresistance--magnetotransport properties--photoconductivity--bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Shaykhutdinov K. A., Tsikalov V. S., Petrov M. I., Balaev D. A., Semenov S. V.
Заглавие : The magnetic-field-driven effect of microwave detection in a manganite granular system
Место публикации : J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст.15004. - ISSN 0022-3727, DOI 10.1088/0022-3727/41/1/015004
Примечания : Cited References: 24
Предметные рубрики: IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Ключевые слова (''Своб.индексиров.''): bias currents--curie temperature--electric power generation--granular materials--magnetic field effects--microwave irradiation--voltage measurement--direct current voltage--magnetic tunnel junctions--metal insulator metal junctions--nonmagnetic metals--manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Patrin G. S., Turpanov I. A., Marushchenko D. A., Lee L. A., Rudenko T. V.
Заглавие : The investigation of long-range exchange interaction in spin valve structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.489-494. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.489. - ISSN 16629779
Примечания : Cited References: 17
Ключевые слова (''Своб.индексиров.''): exchange bias--exchange interaction--spin valve--thin films
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Gustaitsev A. O., Volkov N. V.
Заглавие : The bias-controlled magnetoimpedance effect in a MIS structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.451-455. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.451. - ISSN 978-3-03835-482-6
Ключевые слова (''Своб.индексиров.''): bias--magnetoimpedance--mis-structure--magnetic fields--schottky barrier diodes--temperature distribution--applied magnetic fields--bias--giant magneto impedance effect--lower temperatures--magneto-impedance--magneto-impedance effects--mis structure--temperature dependence--magnetism
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : The Bias-Controlled Frequency-Dependent ac Transport Properties of the FeNi/SiO2/p-Si Schottky Diode
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.84
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : The bias-controlled frequency-dependent ac transport properties of the FeNi/SiO2/p-Si Schottky diode
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.111
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gritsenko, C.h., Dzhun I., Volochaev M. N., Gorshenkov M., Babaytsev G., Chechenin N., Sokolov A. Е., Tretiakov, Oleg A., Rodionova V.
Заглавие : Temperature-dependent magnetization reversal in exchange bias NiFe/IrMn/NiFe structures
Коллективы : Russian Foundation for Basic Research (RFBR) [17-32-50170]; MEXT, Japan [17 K05511, 17H05173]; Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University; JSPS; RFBR under the Japan-Russian Research Cooperative Program; Ministry of Education and Science of the Russian Federation [3.9002.2017/6.7]
Место публикации : J. Magn. Magn. Mater. - 2019. - Vol. 482. - P.370-375. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2019.03.044. - ISSN 1873-4766(eISSN)
Примечания : Cited References: 55. - Ch. G. and M. G. acknowledge financial support by the Russian Foundation for Basic Research (RFBR grant. 17-32-50170). Ch. G. acknowledges the 5 top 100 Russian Academic Excellence Project at the Immanuel Kant Baltic Federal University. O.A.T. acknowledges support by the Grants-in-Aid for Scientific Research (Grant Nos. 17 K05511 and 17H05173) from MEXT, Japan, by the grant of the Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, by JSPS and RFBR under the Japan-Russian Research Cooperative Program. V.R. acknowledges the Ministry of Education and Science of the Russian Federation in the framework of government assignment 3.9002.2017/6.7. Electron microscopy examination was carried out at the Center for Collective Use of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences. We also thank Montserrat Rivas for helpful discussions.
Предметные рубрики: COERCIVITY
FILM
ROUGHNESS
THICKNESS
HEADS
IRMN
Аннотация: We demonstrate magnetization reversal features in NiFe/IrMn/NiFe thin-film structures with 40% and 75% relative content of Ni in Permalloy in the temperature range from 80 K to 300 K. The magnetization reversal sequence of the two ferromagnetic layers is found to depend on the type of NiFe alloy. In the samples with 75% relative content of Ni, the bottom ferromagnetic layer reverses prior to the top one. On the contrary, in the samples with 40% of Ni, the top ferromagnetic layer reverses prior to the bottom one. These tendencies of magnetization reversal are preserved in the entire range of temperatures. These distinctions can be explained by the morphological and structural differences of interfaces in the samples based on two types of Permalloy.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Stolyar S. V., Yakovchuk V. Yu., Vazhenina I. G., Iskhakov R. S.
Заглавие : Study of surface anisotropy of the interface of two-layer DyCo/FeNi Films by the spin-wave resonance method
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [20-42-240010]
Место публикации : J. Supercond. Nov. Magn. - 2021. - Vol. 34, Is. 11. - P.2969-2975. - ISSN 1557-1939, DOI 10.1007/s10948-021-06001-x. - ISSN 1557-1947(eISSN)
Примечания : Cited References: 29. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240010
Предметные рубрики: UNIDIRECTIONAL ANISOTROPY
FERROMAGNETIC-RESONANCE
MAGNETIC-FILMS
Аннотация: Two-layer DyCo/FeNi films were studied by the spin-wave resonance method. The experimental microwave frequency absorption spectra of the two-layer DyCo/FeNi films demonstrate the bulk and surface peaks of the exchange spin modes. The dependence of the surface condition type formed at the interface on the composition of the hard-magnetic layer (before and after the compensation point) was found. The values of the surface anisotropy constant and the type of magnetization pinning at each surface of the FeNi layer were estimated.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Luk'yanenko A. V., Bondarev I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P.665-668. - ISSN 1063-7850, DOI 10.1134/S1063785020070135. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886)
Предметные рубрики: TRANSPORT
Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Krasikov A. A., Dubrovskiy A. A., Semenov S. V., Popkov S. I., Stolyar S. V., Iskhakov R. S., Ladygina V. P., Yaroslavtsev R. N.
Заглавие : Specific features of magnetic properties of ferrihydrite nanoparticles of bacterial origin: A shift of the hysteresis loop
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 58, Is. 2. - P.287-292. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783416020050
Примечания : Cited References: 23. - This study was supported by the Ministry of Education and Science of the Russian Federation within the state contract for 2014-2016.
Предметные рубрики: Exchange bias
NiO nanoparticles
Anomalies
Аннотация: The results of the experimental investigation into the magnetic hysteresis of systems of superparamagnetic ferrihydrite nanoparticles of bacterial origin have been presented. The hysteresis properties of these objects are determined by the presence of an uncompensated magnetic moment in antiferromagnetic nanoparticles. It has been revealed that, under the conditions of cooling in an external magnetic field, there is a shift of the hysteresis loop with respect to the origin of the coordinates. These features are associated with the exchange coupling of the uncompensated magnetic moment and the antiferromagnetic “core” of the particles, as well as with processes similar to those responsible for the behavior of minor hysteresis loops due to strong local anisotropy fields of the ferrihydrite nanoparticles. © 2016, Pleiades Publishing, Ltd.
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Gustaitsev A. O., Volkov N. V.
Заглавие : Bias-controlled magnetoimpedance effect in a mis structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): Book of abstracts. - 2014. - Ст.1PO-K-8. - P.541. - ISBN 978-5-91978-025-0
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Sorokin B. P., Karpovich A. A., Aleksandrov K. S.
Заглавие : Reflection and refraction of bulk acoustic waves in piezoelectric crystals under the action of bias electric field and uniaxial pressure
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст.4803254. - P.2161-2164. - ISBN 1051-0117, DOI 10.1109/ULTSYM.2008.0535
Ключевые слова (''Своб.индексиров.''): bias electric field--bulk elastic wave--mechanical stress--piezoelectric crystal--reflection--refraction--bias electric field--bulk acoustic waves--bulk elastic wave--mechanical stress--piezoelectric crystal--piezoelectric crystals--uniaxial pressures--acoustic wave reflection--acoustics--crystals--elastic waves--elasticity--electric field measurement--electric fields--piezoelectric materials--piezoelectric transducers--piezoelectricity--refraction--soil structure interactions--stresses
Аннотация: Main theory results concerned with bulk elastic wave reflection/refraction on the boundary between two piezoelectric crystals subjected to the action of bias electric field or mechanical stress have presented. Some calculations for LiNbO3 and Bi12GeO20 crystals have made. В©2008 IEEE.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernichenko A. V., Edelman I. S., Velikanov D. A., Marushchenko D. A., Turpanov I. A., Patrin G. S., Greben'kova Yu. E.
Заглавие : Peculiarities of magnetic properties of Ni-Ge layered films
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 261-264. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.261
Ключевые слова (''Своб.индексиров.''): exchange bias effect--magnetic properties--ni and ge mutual diffusion--ni-ge layer structures--surface morphology--antiferromagnetism--diffusion--germanium--magnetic properties--magnetization--morphology--phase interfaces--solids--germanium--magnetic properties--magnetization--nickel--surface morphology--temperature distribution--antiferromagnetic phase--exchange bias effects--ge films--layered films--low temperatures--magnetization temperature--mutual diffusion--ni and ge mutual diffusion--ni-ge layer structures--ge layers--surface morphology--magnetism
Аннотация: The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange bias effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Song Y. Y., Kim D. H., Yu S. C., Kim P. D., Turpanov I. A., Lee L. A., Buzmakov A. E., Lee K. W.
Заглавие : Observation of nonmonotonic oscillatory interlayer exchange coupling in Co/Cu/CoO films with varying Cu spacer thickness
Разночтения заглавия :авие SCOPUS: Observation of nonmonotonic oscillatory interlayer exchange coupling in CoCuCoO films with varying Cu spacer thickness
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2008. - Vol. 103: 52nd Annual Conference on Magnetism and Magnetic Materials (NOV 05-09, 2007, Tampa, FL), Is. 7. - Ст.07C112. - ISSN 0021-8979, DOI 10.1063/1.2831390
Примечания : Cited References: 20
Предметные рубрики: GIANT MAGNETORESISTANCE
MAGNETIC-ANISOTROPY
LAYERS
BIAS
SUPERLATTICES
MULTILAYERS
TRILAYERS
Ключевые слова (''Своб.индексиров.''): copper--film thickness--thermal effects--cocucoo films--oscillatory interlayer exchange coupling.--metallic films
Аннотация: We report our experimental observation of interlayer exchange coupling phenomena in CoO/Cu/Co trilayers with systematic variation of Cu spacer layer thickness as well as temperature. It has been found that there exists a clear indication of nonmonotonically varying oscillatory interlayer exchange coupling. The amplitude of oscillation increases, reaches to the maximum, and decreases with increasing Cu spacer thickness from 1 to 16 atomic layers for all temperature ranges between 70 and 200 K. (c) 2008 American Institute of Physics.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chen K., Philippi-Kobs A., Lauter V., Vorobiev A., Dyadkina E., Yakovchuk, V. Yu., Stolyar S. V., Lott D.
Заглавие : Observation of a Chirality-Induced Exchange-Bias Effect
Коллективы : Deusche Forschungsgemeinschaft (DFG)German Research Foundation (DFG) [615811]; DFG via Sonderforschungsbereich (collaborative research center)German Research Foundation (DFG) [SFB925]
Место публикации : Phys. Rev. Appl. - 2019. - Vol. 12, Is. 2. - Ст.024047. - ISSN 2331-7019, DOI 10.1103/PhysRevApplied.12.024047
Примечания : Cited References: 68. - K.C. benefited from the support of the Deusche Forschungsgemeinschaft (DFG) via Project No. 615811. A.P.-K. gratefully acknowledges support from the DFG via Sonderforschungsbereich (collaborative research center) SFB925 (subproject B3).
Предметные рубрики: SPIN-ORBIT TORQUE
FIELD
ANISOTROPY
MAGNETISM
Аннотация: Chiral magnetism that manifests in the existence of skyrmions or chiral domain walls offers an alternative way for creating anisotropies in magnetic materials that might have large potential for application in future spintronic devices. Here we show experimental evidence for an alternative type of in-plane exchange-bias effect present at room temperature that is created from a chiral 90∘ domain wall at the interface of a ferrimagnetic-ferromagnetic Dy-Co/Ni-Fe bilayer system. The chiral interfacial domain wall forms due to the exchange coupling of Ni-Fe and Dy-Co at the interface and the presence of Dzyaloshinskii-Moriya interaction in the Dy-Co layer. As a consequence of the preferred chirality of the interfacial domain wall, the sign of the exchange-bias effect can be reversed by changing the perpendicular orientation of the Dy-Co magnetization. The chirality-created tunable exchange bias in Dy-Co/Ni-Fe is very robust against high in-plane magnetic fields (μ0H≤6T) and does not show any aging effects. Therefore, it overcomes the limitations of conventional exchange-bias systems.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrov K. S., Turchin P. P., Sorokin B. P., Burkov S. I.
Заглавие : Nonlinear electromechanical nronerties and acoustic waves propagation in la3Ga5SiO14 single crystals under the.bias static fields
Место публикации : Izv RAN Ser Fiz. - 1996. - Vol. 60, Is. 10. - P.103-105. - ISSN 0367-6765
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