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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrov K. S., Turchin P. P., Sorokin B. P., Burkov S. I.
Заглавие : Nonlinear electromechanical nronerties and acoustic waves propagation in la3Ga5SiO14 single crystals under the.bias static fields
Место публикации : Izv RAN Ser Fiz. - 1996. - Vol. 60, Is. 10. - P.103-105. - ISSN 0367-6765
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gorban A., Popova T., Zinovyev A.
Заглавие : Codon usage trajectories and 7-cluster structure of 143 complete bacterial genornic sequences
Разночтения заглавия :авие SCOPUS: Codon usage trajectories and 7-cluster structure of 143 complete bacterial genomic sequences
Место публикации : Physica A: ELSEVIER SCIENCE BV, 2005. - Vol. 353. - P365-387. - ISSN 0378-4371, DOI 10.1016/j.physa.2005.01.043
Примечания : Cited References: 46
Предметные рубрики: DNA-BASE COMPOSITION
ASYMMETRIC SUBSTITUTION PATTERNS
PROTEIN-CODING REGIONS
MICROBIAL GENOMES
GENE IDENTIFICATION
MARKOV-MODELS
G+C CONTENT
BIAS
PREDICTION
SELECTION
Ключевые слова (''Своб.индексиров.''): genome--cluster--codon usage--correlations--entropy--mean field--cluster--codon usage--correlations--entropy--genome--mean field--approximation theory--correlation methods--database systems--entropy--functions--genes--mathematical models--clusters--codon usage--genomes--mean field--bacteria
Аннотация: Three results are presented. First, we prove the existence of a universal 7-cluster structure in all 143 completely sequenced bacterial genomes available in Genbank in August 2004, and explained its properties. The 7-cluster structure is responsible for the main part of sequence heterogeneity in bacterial genomes. In this sense, our 7 clusters is the basic model of bacterial genome sequence. We demonstrated that there are four basic "pure" types of this model, observed in nature: "parallel triangles", "perpendicular triangles", degenerated case and the flower-like type. Second, we answered the question: how big are the position-specific information and the contribution connected with correlations between nucleotide. The accuracy of the mean-field (context-free) approximation is estimated for bacterial genomes. We show that codon us-age of bacterial genomes is a multi-linear function of their genomic G+C-content with high accuracy (more precisely, by two similar functions, one for eubacterial genomes and the other one for archaea). Description of these two codon-usage trajectories is the third result. All 143 cluster animated 3D-scatters are collected in a database and is made available on our web-site: http://www.ihes.fr/similar to zinovyev/7clusters. (c) 2005 Elsevier B.V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Sorokin B. P., Karpovich A. A., Aleksandrov K. S.
Заглавие : Reflection and refraction of bulk acoustic waves in piezoelectric crystals under the action of bias electric field and uniaxial pressure
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст.4803254. - P.2161-2164. - ISBN 1051-0117, DOI 10.1109/ULTSYM.2008.0535
Ключевые слова (''Своб.индексиров.''): bias electric field--bulk elastic wave--mechanical stress--piezoelectric crystal--reflection--refraction--bias electric field--bulk acoustic waves--bulk elastic wave--mechanical stress--piezoelectric crystal--piezoelectric crystals--uniaxial pressures--acoustic wave reflection--acoustics--crystals--elastic waves--elasticity--electric field measurement--electric fields--piezoelectric materials--piezoelectric transducers--piezoelectricity--refraction--soil structure interactions--stresses
Аннотация: Main theory results concerned with bulk elastic wave reflection/refraction on the boundary between two piezoelectric crystals subjected to the action of bias electric field or mechanical stress have presented. Some calculations for LiNbO3 and Bi12GeO20 crystals have made. В©2008 IEEE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Shaykhutdinov K. A., Tsikalov V. S., Petrov M. I., Balaev D. A., Semenov S. V.
Заглавие : The magnetic-field-driven effect of microwave detection in a manganite granular system
Место публикации : J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст.15004. - ISSN 0022-3727, DOI 10.1088/0022-3727/41/1/015004
Примечания : Cited References: 24
Предметные рубрики: IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Ключевые слова (''Своб.индексиров.''): bias currents--curie temperature--electric power generation--granular materials--magnetic field effects--microwave irradiation--voltage measurement--direct current voltage--magnetic tunnel junctions--metal insulator metal junctions--nonmagnetic metals--manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Song Y. Y., Kim D. H., Yu S. C., Kim P. D., Turpanov I. A., Lee L. A., Buzmakov A. E., Lee K. W.
Заглавие : Observation of nonmonotonic oscillatory interlayer exchange coupling in Co/Cu/CoO films with varying Cu spacer thickness
Разночтения заглавия :авие SCOPUS: Observation of nonmonotonic oscillatory interlayer exchange coupling in CoCuCoO films with varying Cu spacer thickness
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2008. - Vol. 103: 52nd Annual Conference on Magnetism and Magnetic Materials (NOV 05-09, 2007, Tampa, FL), Is. 7. - Ст.07C112. - ISSN 0021-8979, DOI 10.1063/1.2831390
Примечания : Cited References: 20
Предметные рубрики: GIANT MAGNETORESISTANCE
MAGNETIC-ANISOTROPY
LAYERS
BIAS
SUPERLATTICES
MULTILAYERS
TRILAYERS
Ключевые слова (''Своб.индексиров.''): copper--film thickness--thermal effects--cocucoo films--oscillatory interlayer exchange coupling.--metallic films
Аннотация: We report our experimental observation of interlayer exchange coupling phenomena in CoO/Cu/Co trilayers with systematic variation of Cu spacer layer thickness as well as temperature. It has been found that there exists a clear indication of nonmonotonically varying oscillatory interlayer exchange coupling. The amplitude of oscillation increases, reaches to the maximum, and decreases with increasing Cu spacer thickness from 1 to 16 atomic layers for all temperature ranges between 70 and 200 K. (c) 2008 American Institute of Physics.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Zolotova O. P., Turchin P. P., Sorokin B. P., Aleksandrov K. S.
Заглавие : Calculation of thermostable directions and the influence of bias electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст.5935458. - P.1853-1856. - ISBN 1051, DOI 10.1109/ULTSYM.2010.5935458. - ISBN 9781457703829
Ключевые слова (''Своб.индексиров.''): dc electric field influence--lamb wave--sh-wave--thermostability--bias electric fields--dc electric field--lamb wave--langasite crystals--langasites--sh wave--single-crystal plates--temperature coefficient--thermostability--computer simulation--electromechanical coupling--shear waves--single crystals--ultrasonics--electric fields--electric fields--shear waves
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernichenko A. V., Edelman I. S., Velikanov D. A., Marushchenko D. A., Turpanov I. A., Patrin G. S., Greben'kova Yu. E.
Заглавие : Peculiarities of magnetic properties of Ni-Ge layered films
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 261-264. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.261
Ключевые слова (''Своб.индексиров.''): exchange bias effect--magnetic properties--ni and ge mutual diffusion--ni-ge layer structures--surface morphology--antiferromagnetism--diffusion--germanium--magnetic properties--magnetization--morphology--phase interfaces--solids--germanium--magnetic properties--magnetization--nickel--surface morphology--temperature distribution--antiferromagnetic phase--exchange bias effects--ge films--layered films--low temperatures--magnetization temperature--mutual diffusion--ni and ge mutual diffusion--ni-ge layer structures--ge layers--surface morphology--magnetism
Аннотация: The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange bias effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N.V., Eremin E.V.,, Tarasov A.S., Varnakov S.N., Ovchinnikov S.G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/Si02/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2011): Book of abstracts. - 2011. - Ст.22PO-I-10. - P.109
Примечания : Библиогр.: 1. - This study was supported by the Russian Foundation for Basic research, project no. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program 21.1; the Division for Physical Sciences of the Russian Academy of Sciences, program 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, projects nos. 5 and 134; and the Federal target program, State contract NK-556P_15.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N.V., Eremin E.V., Tarasov A.S., Varnakov S.N., Ovchinnikov S.G., Patrin G.S.
Заглавие : Magnetic Tunnel Structures: Transport Properties Controlled by Bias, Magnetic Field, Micro- wave and Optical Radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2011): Book of abstracts. - 2011. - Ст.25RP-H-8. - P.911-912
Примечания : Библиогр.: 2. - This study was supported by the RFBR, project no. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program 21.1; the Division for Physical Sciences of the Russian Academy of Sciences, program 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, projects nos. 5 and 134; and the Federal target program, State contract NK-556P_15
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Yu S. C., Patrin G. S., Song Y. Y., Turpanov I. A., Khalyapin D. L., Marushchenko D. A.
Заглавие : Effect of the nonmagnetic layer in a Co/Cu/CoO trilayer structure on the exchange coupling in it
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 4. - P612-616. - ISSN 1063-7761, DOI 10.1134/S1063776111030058
Примечания : Cited References: 21
Предметные рубрики: SPACER LAYER
BIAS
ANISOTROPY
Ключевые слова (''Своб.индексиров.''): cobalt layers--copper layer--exchange bias--interlayer exchange coupling--nonmagnetic layers--oscillation amplitude--temperature dependence--temperature range--trilayer film--trilayer structure--cobalt--crystal structure--epitaxial films--hysteresis--hysteresis loops--magnetic materials--exchange coupling
Аннотация: The dependence of the exchange bias of epitaxial single-crystal Co/Cu/CoO trilayer films on the copper layer thickness and temperature is studied. The exchange bias of the hysteresis loops of the ferromagnetic cobalt layer as a function of the copper layer thickness is found to have a well-pronounced oscillating character. The oscillations manifest themselves over the entire temperature range in which an exchange bias takes place (77-220 K). The complex variation of the oscillation amplitude with the nonmagnetic layer thickness can be explained by the superposition of two interlayer exchange coupling oscillation periods (lambda(1) a parts per thousand 10-11 , lambda(2) a parts per thousand 20 ) having differentamplitudes and temperature dependences.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chzhan A. V., Patrin G. S., Kiparisov S. Ya., Seredkin V. A.
Заглавие : Coercivity and exchange bias in magnetic sandwich structure prepared by chemical deposition
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena: Selected, peer reviewed papers/ ed.: N. Perov, V. Rodionova. - Stafa-Zurich: Trans Tech Publications, 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P.463-465. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.190.463. - ISSN 978-303785436-5
Примечания : Cited References: 5
Ключевые слова (''Своб.индексиров.''): sandwich structure--exchange bias--coercivity--magnetization reversal
Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S.
Заглавие : Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier Science BV, 2012. - Vol. 324, Is. 21. - P.3579-3583. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2012.02.095
Примечания : Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15).
Ключевые слова (''Своб.индексиров.''): spintronics--magnetic tunnel junction--high-frequency rectification--photoelectric effect
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Изотов, Андрей Викторович, Беляев, Борис Афанасьевич, Соловьев, Платон Николаевич, Волошин, Александр Сергеевич
Заглавие : Микромагнитное моделирование и численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик
Место публикации : Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232
Примечания : Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
Ключевые слова (''Своб.индексиров.''): микромагнитное моделирование--ферромагнетик/антиферромагнетик--петля гистерезиса--обменное смещение--коэрцитивная сила--micromagnetic simulation--coercivity--ferromagnetic/antiferromagnetic--hysteresis loop--exchange bias
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Zotov A. V., Solovev P. N.
Заглавие : Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer
Коллективы : International Siberian Conference on Control and Communications
Место публикации : Int. Sib. Conf. on Control and Communicat.: Proc.: IEEE, 2013. - Conference code: 102462Cт. 6693573. - ISSN 978-1-4799-1060-1, DOI 10.1109/SIBCON.2013.6693573
Примечания : Cited References: 13
Предметные рубрики: EXCHANGE-BIAS
DEPENDENCE
Ключевые слова (''Своб.индексиров.''): absorption spectrum--exchange bias--micromagnetic modeling
Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Patrin G. S., Turpanov I. A., Marushchenko D. A., Lee L. A., Rudenko T. V.
Заглавие : The investigation of long-range exchange interaction in spin valve structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.489-494. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.489. - ISSN 16629779
Примечания : Cited References: 17
Ключевые слова (''Своб.индексиров.''): exchange bias--exchange interaction--spin valve--thin films
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.
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20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled AC and DC magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст.1RP-A-10. - P.315. - ISBN 978-5-91978-025-0
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