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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Azarapin N. O., Oreshonkov A. S., Razumkova I. A., Aleksandrovsky A. S., Maximov N. G., Leonidov I. I., Shestakov N. P., Andreev O. V.
Заглавие : Evolution of structural, thermal, optical, and vibrational properties of Sc2S3, ScCuS2, and BaScCuS3 semiconductors
Коллективы : Ministry of Science and Higher Education of the Russian Federation [05.594.21.0019, UIN RFME-FI59420X0019]; ISSC UB RAS [AAAA-A19-119031890025-9]
Место публикации : Eur. J. Inorg. Chem. - 2021. - Vol. 2021, Is. 33. - P.3355-3366. - ISSN 1434-1948, DOI 10.1002/ejic.202100292. - ISSN 1099-0682(eISSN)
Примечания : Cited References: 50. - The work was partially carried out using the resources of the Research Resource Center "Natural Resources Management and Physico-Chemical Research" (Tyumen University) with financial support from the Ministry of Science and Higher Education of the Russian Federation (contract No. 05.594.21.0019, UIN RFMEFI59420X0019). The Raman spectroscopic studies were carried out at the collaborative research center for vibrational spectroscopy at ISSC UB RAS (Ekaterinburg, Russia). I.I.L. would like to acknowledge the support from the Research Program No. AAAA-A19-119031890025-9 (ISSC UB RAS). The use of the equipment of Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center "Krasnoyarsk Science Center SB RAS" is acknowledged." The authors are grateful to Dr. Elena V. Vladimirova (ISSC UB RAS) for technical assistance
Предметные рубрики: RARE-EARTH
QUATERNARY CHALCOGENIDES
CRYSTAL-STRUCTURES
Аннотация: In the present work, we report on the synthesis of Sc2S3, ScCuS2 and BaScCuS3 powders using a method based on oxides sulfidation and modification of their properties. The crystal structures and morphology of samples are verified by XRD and SEM techniques. Thermal stability has been studied by DTA which has revealed that Sc2S3 decomposes to ScS through melting at 1877 K. ScCuS2 and BaScCuS3 melt incongruently at temperatures of 1618 K and 1535 K, respectively. The electronic structure calculations show that the investigated compounds are semiconductors with indirect band gap (Eg). According to the diffuse reflection spectroscopy, Sc2S3, ScCuS2 and BaScCuS3 are wide-bandgap semiconductors featured the Eg values of 2.53 eV, 2.05 eV and 2.06 eV, respectively. The band gap decreases with the introduction of copper (I) and barium cations into the crystal structure of the compounds. Variation of local structure has been verified by Raman and infrared spectroscopy. The calculated vibrational modes of ScCuS2 correspond to CuS4 and Sc−S layer vibrations, even though ScS6 octahedra-like structural units can be found in the structure.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Romanova O. B., Udod L. V., Demidenko O. F.
Заглавие : Structural properties of sulfides chalcogenides manganese substituted by elements with variable valency
Коллективы : International Scientific Conference Transport of Siberia 2020
Место публикации : IOP Conf. Ser.: Mater. Sci. Eng. - 2020. - Vol. 918, Is. 1. - Ст.012101. - DOI 10.1088/1757-899X/918/1/012101
Примечания : Cited References: 33. - The reported study was funded by RFBR according to the research project №20-52-00005 Bel_a
Аннотация: The structure and transport of YbXMn1-XS and TmXMn1-XS sulfides (0.05=X=0.2) was studied in the temperature range 80-500K. The temperature ranges of local deformations and a decrease of the thermal expansion coefficient with increasing concentration X caused of anomalous compressibility in the magnetically ordered region are determined for a system doped with ytterbium. Pinning temperatures of lattice polarons are established, which are accompanied by lattice deformation and IR mode condensation for a system doped with thulium.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Dolgov O. V.
Заглавие : Temperature-dependent s± ↔ s++ transitions in the multiband model for Fe-based superconductors with impurities
Коллективы : Russian Foundation for Basic Research [16-02-00098]; Presidium of RAS Program for the Fundamental Studies [12]; "BASIS" Foundation for Development of Theoretical Physics and Mathematics; Gosbudget program [0356-2017-0030]
Место публикации : Symmetry. - Basel, 2018. - Vol. 10, Is. 8. - Ст.323. - ISSN 2073-8994, DOI 10.3390/sym10080323
Примечания : Cited References: 50. - This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098), Presidium of RAS Program for the Fundamental Studies #12, and "BASIS" Foundation for Development of Theoretical Physics and Mathematics. MMK acknowledges support by the Gosbudget program #0356-2017-0030.
Предметные рубрики: IRON-BASED MATERIALS
Ключевые слова (''Своб.индексиров.''): unconventional superconductors--iron pnictides--iron chalcogenides--impurity scattering
Аннотация: We study the dependence of the superconducting gaps on both the disorder and the temperature within the two-band model for iron-based materials. In the clean limit, the system is in the s± state with sign-changing gaps. Scattering by nonmagnetic impurities leads to the change of the sign of the smaller gap, resulting in a transition from the s± to the s++ state with the sign-preserving gaps. We show here that the transition is temperature-dependent. Thus, there is a line of s±→s++ transition in the temperature–disorder phase diagram. There is a narrow range of impurity scattering rates, where the disorder-induced s±→s++ transition occurs at low temperatures, but then the low-temperature s++ state transforms back to the s± state at higher temperatures. With increasing impurity scattering rate, the temperature of such s++→s± transition shifts to the critical temperature Tc, and only the s++ state is left for higher amounts of disorder.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Korshunov M. M., Shestakov V. A., Togushova Yu.N.
Заглавие : Spin resonance peak in the superconducting state of iron pnictides and chalcogenides
Коллективы : International Conference on Solid Compounds of Transition Elements
Место публикации : The 21st International Conference on Solid Compounds of Transition Elements (SCTE 18)/ programme and abstracts. - 2018. - Ст.Tu-A15. - P.48
Аннотация: Disorder can result in interesting and sometimes unexpected effects in multiband superconductors. Especially if the superconductivity is unconventional like in ironbased pnictides and chalcogenides. I’m going to discuss how the impurity scattering affects superconducting states with s+- and s++ gaps, and show that disorder causes the transitions between s+- and s++ states and examine observable effects these transitions can produce.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Sitnikov M. N., Loginov Yu. Yu., Abdelbaki H.
Заглавие : Concentration dependences of the structural, magnetic and kinetic properties of manganese chalcogenides doped with tellurium
Коллективы : Reshetnev Readings 2019
Место публикации : IOP Conf. Ser.: Mater. Sci. Eng. - 2022. - Vol. 1230. - Ст.012016. - ISSN 1757-8981 (ISSN), DOI 10.1088/1757-899X/1230/1/012016. - ISSN 1757-899X (eISSN)
Примечания : Cited References: 26. - The reported study was funded by RFBR according to the research project No 20-52-00005 Bel_a
Аннотация: The effect of anionic substitution on the structural, magnetic, and kinetic properties of chalcogenides of the MnSe1-XTeX system in the temperature range of 77-400K in magnetic fields up to 12 kOe was studied. With an increase in the substitution concentration, changes in the structural and magnetic characteristics, which correlate with changes in the electronic structure, were found. The type and mobility of the main current carriers were determined from the Hall effect measurements.
https://doi.org/10.1088/1757-899X/1230/1/012016
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Grigoriev, Maxim V., Ruseikina, Anna V., Chernyshev, Vladimir A., Oreshonkov A. S., Garmonov, Alexander A., Molokeev M. S., Locke, Ralf J. C., Elyshev, Andrey V., Schleid, Thomas
Заглавие : Single crystals of EuScCuSe3: Synthesis, experimental and DFT investigations
Место публикации : Materials. - 2023. - Vol. 16, Is. 4. - Ст.1555. - ISSN 19961944 (eISSN), DOI 10.3390/ma16041555
Примечания : Cited References: 39. - This research was funded by the Tyumen Oblast Government as part of the West-Siberian Interregional Science and Education Center’s project No. 89-DON (3). The work was supported by The Ministry of Science and Higher Education of the Russian Federation, project, No. FEUZ-2023-0017
Аннотация: EuScCuSe3 was synthesized from the elements for the first time by the method of cesium-iodide flux. The crystal belongs to the orthorhombic system (Cmcm) with the unit cell parameters a = 3.9883(3) Å, b = 13.2776(9) Å, c = 10.1728(7) Å, V = 538.70(7) Å3. Density functional (DFT) methods were used to study the crystal structure stability of EuScCuSe3 in the experimentally obtained Cmcm and the previously proposed Pnma space groups. It was shown that analysis of elastic properties as Raman and infrared spectroscopy are powerless for this particular task. The instability of EuScCuSe3 in space group Pnma space group is shown on the basis of phonon dispersion curve simulation. The EuScCuSe3 can be assigned to indirect wide-band gap semiconductors. It exhibits the properties of a soft ferromagnet at temperatures below 2 K.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Isaenko L., Dong L., Kurus A., Lin Z., Yelisseyev A., Lobanov S., Molokeev M. S., Korzhneva K., Goloshumova A.
Заглавие : LixAg1–xGaSe2: interplay between lithium and silver in mid-infrared nonlinear optical chalcogenides
Место публикации : Adv. Opt. Mater. - 2022. - Vol. 10, Is. 24. - Ст.2201727. - ISSN 21951071 (ISSN), DOI 10.1002/adom.202201727
Примечания : Cited References: 37. - This work was supported by the National Natural Science Foundation of China (Grant No. 22133004), Russian Science Foundation, grant # 19‐12‐00085‐P (crystal growth, crystal structure analysis, band gap measurement) and partly done on state assignment of IGM SB RAS (composition chemical analysis)
Аннотация: AgGaSe2 and LiGaSe2 are two famous mid-infrared nonlinear optical (NLO) materials with similar chemical formula but different structural symmetry. The former material has relatively larger NLO effect and birefringence but rather small energy band gap, while the latter is the opposite. Aiming at achieving a good balance of NLO properties, here the substitution between silver and lithium ions on the evolution of structural and optical properties in a new series of LixAg1–xGaSe2 crystals is systematically investigated. It reveals that, with the increase of Li content, LixAg1–xGaSe2 almost keeps the same tetragonal symmetry with AgGaSe2 until x ≈ 0.9. The NLO effects and birefringence values vary with respect to x with the largest variation at x = 0.8–0.9. The optimal combination of birefringence (0.03–0.025) and nonlinear parameters (26–30 pm V−1) is achieved at x = 0.4–0.5. As the energy band gap increases with the increase of x, the maximal value of 2.2 eV for chalcopyrite structure suggests that the laser-induced damage threshold of LixAg1–xGaSe2 would be as large as five-fold of AgGaSe2. This study provides a good example to show that the rational substitution between Li and Ag can significantly improve the balance of NLO properties in chalcogenides.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Andreev O. V., Atuchin V. V., Aleksandrovsky A. S., Denisenko Y. G., Zakharov B. A., Tyutyunnik A. P., Habibullayev N. N., Velikanov D. A., Ulybin D. A., Shpindyuk D. D.
Заглавие : Synthesis, structure, and properties of EuLnCuSe3 (Ln = Nd, Sm, Gd, Er)
Коллективы : Ministry of Science and Higher Education of the Russian Ferderation [AAAA-A21-121011390011-4, AAAA-A19-119031890025-9]; Government of the Tyumen Region [2. 89-don]
Место публикации : Crystals. - 2022. - Vol. 12, Is. 1. - Ст.17. - ISSN 2073-4352(eISSN), DOI 10.3390/cryst12010017
Примечания : Cited References: 60. - The study was funded by the Ministry of Science and Higher Education of the Russian Ferderation (Projects AAAA-A21-121011390011-4 and AAAA-A19-119031890025-9), as well as the Government of the Tyumen Region (grant to non-profit organizations No. 2. 89-don, dated 7 December 2020)
Предметные рубрики: RARE-EARTH
CRYSTAL-STRUCTURE
MAGNETIC-PROPERTIES
CHALCOGENIDES
Аннотация: EuLnCuSe3 (Ln = Nd, Sm, Gd, Er), due to their complex composition, should be considered new materials with the ability to purposefully change the properties. Samples of the EuLnCuSe3 were prepared using Cu, rare earth metal, Se (99.99%) by the ampoule method. The samples were obtained by the crystallization from a melt and annealed at temperatures 1073 and 1273 K. The EuErCuSe3 crystal structure was established using the single-crystal particle. EuErCuSe3 crystallizes in the orthorhombic system, space group Cmcm, KCuZrS3 structure type, with cell parameters a = 4.0555 (3), b = 13.3570 (9), and c = 10.4602 (7) Å, V = 566.62 (6) Å3. In structure EuErCuSe3, erbium ions are coordinated by selenium ions in the octahedral polyhedron, copper ions are in the tetrahedral coordination, europium ions are between copper and erbium polyhedra layers and are coordinated by selenium ions as two-cap trigonal prisms. The optical band gap is 1.79 eV. At 4.7 K, a transition from the ferrimagnetic state to the paramagnetic state was detected in EuErCuSe3. At 85 and 293 K, the compound is in a paramagnetic state. According to XRPD data, EuLnCuSe3 (Ln = Nd, Sm, Gd) compounds have a Pnma orthorhombic space group of the Eu2CuS3 structure type. For EuSmCuSe3, a = 10.75704 (15) Å, b = 4.11120 (5) Å, c = 13.37778 (22) Å. In the series of EuLnCuSe3 compounds, the optical band gap increases 1.58 eV (Nd), 1.58 eV (Sm), 1.72 eV (Gd), 1.79 eV (Er), the microhardness of the 205 (Nd), 210 (Sm), 225 (Gd) 235 ± 4 HV (Er) phases increases, and the thermal stability of the phases increases significantly. According to the measurement data of differential scanning calorimetry, the EuNdCuSe3 decomposes, according to the solid-phase reaction T = 1296 K, ΔH = 8.2 ± 0.8 kJ/mol. EuSmCuSe3 melts incongruently T = 1449 K, ΔH = 18.8 ± 1.9 kJ/mol. For the EuGdCuSe3, two (Tα↔β = 1494 K, ΔHα↔β = 14.8 kJ/mol, Tβ↔γ = 1530 K, ΔHβ↔γ = 4.8 kJ/mol) and for EuErCuSe3 three polymorphic transitions (Tα↔β = 1561 K, ΔHα↔β = 30.3 kJ/mol, Tβ↔γ = 1579 K, ΔHβ↔γ = 4.4 kJ/mol, and Tγ↔δ = 1600 K, ΔHγ↔δ = 10.1 kJ/mol). The compounds melt incongruently at the temperature of 1588 K, ΔHmelt = 17.9 ± 1.8 kJ/mol and 1664 K, ΔHmelt = 25.6 ± 2.5 kJ/mol, respectively. Incongruent melting of the phases proceeds with the formation of a solid solution of EuSe and a liquid phase.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Аплеснин, Сергей Степанович, Романова, Оксана Борисовна, Галяс А. И., Живулько А. М., Янушкевич К. И.
Заглавие : Условия синтеза, кристаллическая структура и магнитные свойства селенидов Mn–Tm–Se
Место публикации : Изв. НАН Беларуси. Сер. физ.-технич. наук. - 2022. - Т. 67, № 2. - С. 135-143. - ISSN 1561-8358 (ISSN), DOI 10.29235/1561-8358-2022-67-2-135-143; Ves. NAN Belarusì. Ser. fìz.-tèhnìčn. navuk. - ISSN 2524-244X (eISSN); Proc. Nat. Acad. Sci. Belarus, Phys.-Techn. Ser.
Примечания : Библиогр.: 15. - Работа выполнена при финансовой поддержке Белорусского республиканского фонда фундаментальных исследований (проект № Т20Р-052) и Российского фонда фундаментальных исследований (проект №20-52-00005 Bel_a)This work was supported by the Belarusian Republican Foundation for Basic Research (project no. T20R-052) and the Russian Foundation for Basic Research (project no. 20-52-00005 Bel_a)
Аннотация: Методом реакций в твердой фазе синтезированы однофазные составы в квазибинарном разрезе MnSe–TmSe. Кристаллическая структура поликристаллических порошков изучена в CuKα-излучении. Установлено, что образцы в интервале концентраций 0 ≤ x ≤ 0,7 имеют кубическую структуру пространственной группы Fm 3¯m . Изменение концентрации катионов Tm в составах Mn1–xTmxSe приводит к увеличению параметра a элементарной кристаллической ячейки от 0,547 нм для состава Mn0,975Tm0,025Se до 0,566 нм у состава Mn0,3Tm0,7Se. Методом «flash» на подложках оптически прозрачного стекла синтезированы тонкие слои твердых растворов Mn1–xTmxSe. Толщины пленок заключены в интервале значений от 0,8 до 3,2 мкм. Установлено, что пленки Mn1–xTmxSe также обладают сингонией NaCl, S.G.: Fm 3¯m . Состав пленок Mn1–xTmxSe соответствует химическому составу порошков шихты MnSe–TmSe. В интервале температур ~ 80–900 К измерены величины удельной намагниченности и магнитной восприимчивости исследуемых селенидов. Полученные результаты позволяют определить температурные режимы синтеза новых магнитных полупроводниковых веществ, в том числе в пленочном состоянии. Синтезированные вещества могут быть использованы в устройствах микроэлектроники многофункционального назначения, а также при разработке новых материалов, способных работать в широких интервалах температур и при воздействии внешних магнитных полей.Single-phase compositions in the MnSe–TmSe quasi-binary section have been synthesized by the method of reactions in the solid phase. The crystal structure of polycrystalline powders has been studied in CuKα-radiation. It was found that the samples in the concentration range 0 ≤ x ≤ 0,7 have a cubic structure of the space group Fm 3¯m . An increase in the concentration of Tm cations in the Mn1–xTmxSe compositions leads to an increase in the unit cell parameter a from 0.547 nm for the Mn0.975Tm0.025Se compound to 0.566 nm for the Mn0.3Tm0.7Se composition. Thin layers of Mn1–xTmxSe solid solutions were synthesized by the flash method on optically transparent glass substrates. The film thicknesses are in the range of values from 0.8 to 3.2 µm. It has been established that Mn1–xTmxSe films also have the system NaCl, S.G.: Fm 3¯m . The composition of the Mn1–xTmxSe films corresponds to the chemical composition of the MnSe–TmSe charge powders. In the temperature range ~ 80–900 K, the va lues of the specific magnetization and magnetic susceptibility of the studied selenides were measured. The results obtained make it possible to determine the temperature regimes for the synthesis of new magnetic semiconductor substances, including those in the film state. The synthesized substances can be used in multifunctional microelectronic devices, as well as in the development of new materials capable of operating in wide temperature ranges and under the influence of external magnetic fields.
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