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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ivanova N. B., Kazak N. V., Markov V. V., Ovchinnikov S. G., Rudenko V. V., Abd-Elmeguid M. M.
Заглавие : Analysis of the electrical and optical properties of VBO3 single crystals and Fe1-xVxBO3 solid solutions on the basis of a many-electron model of energy band structure
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 8. - P1462-1468. - ISSN 1063-7834, DOI 10.1134/1.1788779
Примечания : Cited References: 32. - One of the authors (M.M.A.) would like to thank the Deutsche Forschungsgemeinschaft (SFB608) for financial support. This study was supported by the Russian Foundation for Basic Research (project no. 03-02-16286), the program "Integration" (project no. B0017), and the program of the Division of Physical Sciences of the Russian Academy of Sciences "Strongly Correlated Electrons"
Предметные рубрики: MAGNETIC-PROPERTIES
CALCITE STRUCTURE
PHASE-TRANSITION
FERRIC BORATE
HIGH-PRESSURE
FEBO3
FE1-XCRXBO3
FERROMAGNET
MOSSBAUER
SPECTRA
Аннотация: A many-electron model of the energy band structure of VBO3 and of Fe1 - xVxBO3 solid solutions is proposed with strong electron correlations taken into account. Experimental optical absorption spectra and data on the resistivity are discussed in the framework of the suggested model. Variation in the magnetic and electronic properties of VBO3 and Fe1 - xVxBO3 under high pressure is predicted. For VBO3, a Mott-Hubbard (insulator-metal) transition is expected in the high-pressure phase. In Fe1 - xVxBO3 solid solutions, a nontrivial variation in the properties is predicted, leading to the appearance of a different magnetic state. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovskii G. A., Ryabinkina L. I., Abramova G. M., Velikanov D. A., Bovina A. F.
Заглавие : Antiferromagnet-ferromagnet transition in alpha-MnxS manganese sulfides
Разночтения заглавия :авие SCOPUS: Antiferromagnet-ferromagnet transition in α-MnxS manganese sulfides; авие SCOPUS: Antiferromagnet-ferromagnet transition in ?-MnxS manganese sulfides
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2001. - Vol. 43, Is. 3. - P493-495. - ISSN 1063-7834, DOI 10.1134/1.1356126; Phys. Solid State. - 2001. - Vol. 43, Is. 3. - P493-495. - Вариант Sopus
Примечания : Cited References: 7
Аннотация: Off-stoichiometric manganese monosulfides alpha -MnxS (1 less than or equal to x less than or equal to 1.25) are synthesized, and their crystal structure and magnetic properties are studied in the 4.2- to 300-K range. The compounds have a NaCl fcc lattice. Increasing the manganese ion concentration x in the antiferromagnetic semiconductors alpha -MnxS is found to result in concentration- (x(c) similar to 1.05) and temperature-driven (T-c similar to 50 K) magnetic transitions from the antiferromagnetic to ferromagnetic state, with the cubic structure remaining unchanged. (C) 2001 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Piskunova N. I.
Заглавие : Influence of the four-spin exchange interaction on the magnetic properties of manganites
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2005. - Vol. 17, Is. 37. - P.5881-5888. - ISSN 0953-8984, DOI 10.1088/0953-8984/17/37/023
Примечания : Cited References: 18
Предметные рубрики: METAL-INSULATOR-TRANSITION
PHASE
SUSCEPTIBILITY
LA1-XSRXMNO3
FERROMAGNET
TRANSPORT
Ключевые слова (''Своб.индексиров.''): computer simulation--ion exchange--lanthanum compounds--magnetic properties--monte carlo methods--phase diagrams--phase transitions--four-spin exchange interaction--magnetic phase diagram--manganites--metal-dielectric transition--manganese compounds
Аннотация: It is shown that non-Heisenberg exchange interaction should be taken into account to reproduce the magnetic phase diagram of La(1-x)A(x)MnO(3) (A = Ca, Sr) using only effective exchange parameters and spins. The formation of the four-spin exchange arises from carrier hopping and coincides with the critical concentration metal-dielectric transition. The two- and four-spin exchange parameters are determined by Monte Carlo simulations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Begunovich L. V., Korshunov M. M., Ovchinnikov S. G.
Заглавие : Magnetic collapse in Fe3Se4 under high pressure
Место публикации : Materials. - 2022. - Vol. 15, Is. 13. - Ст.4583. - ISSN 19961944 (ISSN), DOI 10.3390/ma15134583
Примечания : Cited References: 27. - L.V.B. and S.G.O. acknowledge the support of the Russian Science Foundation (Project 18-12-00022Π). We acknowledge the useful discussions with M.A. Vysotin. L.V.B. would like to thank the Information Technology Center, Novosibirsk State University, for providing access to their supercomputer facilities
Аннотация: Electronic structure and magnetic properties of Fe3Se4 are calculated using the density functional approach. Due to the metallic properties, magnetic moments of the iron atoms in two nonequivalent positions in the unit cell are different from ionic values for Fe3+ and Fe2+ and are equal to M1=2.071μB and M2=−2.042μB, making the system ferrimagnetic. The total magnetic moment for the unit cell is 2.135μB. Under isotropic compression, the total magnetic moment decreases non-monotonically and correlates with the non-monotonic dependence of the density of states at the Fermi level N(EF). For 7% compression, the magnetic order changes from the ferrimagnetic to the ferromagnetic. At 14% compression, the magnetic order disappears and the total magnetic moment becomes zero, leaving the system in a paramagnetic state. This compression corresponds to the pressure of 114 GPa. The magnetic ordering changes faster upon application of an isotropic external pressure due to the sizeable anisotropy of the chemical bondings in Fe3Se4. The ferrimagnetic and paramagnetic states occur under pressures of 5.0 and 8.0 GPa, respectively. The system remains in the metallic state for all values of compression.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berzhanskii V. N., Ivanov V. I.
Заглавие : Ccritical relaxation in CDCR2SE4 ferromagnet
Место публикации : Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P.1871-1873. - ISSN 0367-3294
Примечания : Cited References: 7
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaeva A. I., Kotlyarskii M. M., Popov F. A., Edelman I. S.
Заглавие : Comparative-study of polytype phase energy-spectrum of RbMnCl3 anti-ferromagnet
Место публикации : Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 3. - P.645-651. - ISSN 0367-3294
Примечания : Cited References: 16
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Bondarev I. A., Rautskii M. V., Baron F. A., Smolyarova T. E., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Fabrication and DC/AC characterization of 3-terminal ferromagnet/silicon spintronics devices
Место публикации : Semiconductors. - 2018. - Vol. 52, Is. 14. - P.1875–1878. - ISSN 1063-7826, DOI 10.1134/S1063782618140312. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 10. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund project no. 18-42-243022. This work is partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”.
Аннотация: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Troyanchuk I. O., Bushinsky M. V., Tereshko N. V., Lanovsky R. A., Sikolenko V. V., Ritter C., Orlov Yu. S., Ovchinnikov S. G.
Заглавие : Ferromagnet-antiferromagnet transition in layered perovskites of Sr3YCo4O10.5 type
Коллективы : Belarussian Foundation for Basic Research [F18R-159]; Russian Foundation Basic Research [18-52-00017 Bel_a, 16-02-00507, 18-52-00020]; Council on grants of the President of the Russian Federation [SP-1844.2016.1]
Место публикации : Mater. Res. Express. - 2019. - Vol. 6, Is. 2. - Ст.026105. - ISSN 2053-1591, DOI 10.1088/2053-1591/aaef21
Примечания : Cited References: 30. - This work was supported by the Belarussian Foundation for Basic Research (project F18R-159) and Russian Foundation Basic Research (contract no. 18-52-00020). Yu S Orlov and SG Ovchinnikov are grateful Russian Foundation Basic Research (contracts no. 18-52-00017 Bel_a, 16-02-00507) and Council on grants of the President of the Russian Federation (SP-1844.2016.1) for the support.
Предметные рубрики: SPIN
NANOWIRES
Ключевые слова (''Своб.индексиров.''): neutron diffraction--orbital ordering--spin state
Аннотация: Sr1−xYxCoO2.65 (x = 0.2) with layered perovskite structure was studied by neutron diffraction, synchrotron x-ray and magnetometry methods. It is shown that in the 90–375 K temperature range the crystal structure can be described by the monoclinic space group A2/m with the superstructure 4√2a p × 2√2a p × 4a p (with a p corresponding to the unit cell parameter of the primitive cell) while basic diffraction peaks are well indexed in the space group I4/mmm (2a p × 2a p × 4a p ) shows an almost standard magnetization. The basic magnetic structure is G-type antiferromagnetic with average magnetic moments of 2.7 μ B/Co and 1.7 μ B/Co in anion-deficient CoO4+γ and stoichiometric CoO6 layers, respectively. A ferromagnetic component of about 0.27 μ B/Co is determined from the magnetization measurements at 8 K. Sr0.8Y0.2CoO2.65 shows an almost standard magnetization versus temperature dependence whereas Sr0.75Y0.25CoO2.65 exhibits an antiferromagnet-ferromagnet transition accompanied by a structural transformation. There is practically no spontaneous magnetization in x = 0.3. The type of the magnetic structure and the high value of TN suggest that the Co3+ ions are in both structural layers predominantly in the low-spin (LS)/high-spin (HS) state mixture. It is proposed that the ferromagnetic component is due to the orbital ordering occurring at TN in the CoO5 pyramids and the concomitant appearance of ferromagnetic coupling between the Co3+(HS) ions located in these CoO5 pyramids in the anion-deficient CoO4+γ layer.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Pankrats A. I., Sablina K. A., Balaev A. D., Eremin M., Kolkov M. I., Tugarinov V. I., Bovina A. F.
Заглавие : Ferromagnetism and strong magnetic anisotropy of the orthoborate PbMnBO4 single crystals
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P1.25. - P.85. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3. - This work is supported by the RFBR grant No. 16-02-00563
Ключевые слова (''Своб.индексиров.''): ferromagnet--resonance--single crystal
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Frolov G. I., Seredkin V. A., Yakovchuk V. Y.
Заглавие : Parameters of the transition layer in the exchange-biased NiFe/DyCo film structure
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 53, Is. 7. - P1348-1352. - ISSN 1063-7834, DOI 10.1134/S1063783411070109
Примечания : Cited References: 19. - This study was supported the Ministry of Education and Science of the Russian Federation within the Analytic Department Targeted Program "Development of the Scientific Potential of the Higher School" (project nos. RNP 2.1.1/4399 and RNP 2.1.1/3498).
Предметные рубрики: UNIDIRECTIONAL ANISOTROPY
BILAYERS
ANTIFERROMAGNET
FERROMAGNET
Аннотация: The parameters of the transition layer in exchange-biased film structures are necessary agents to understand the mechanism of formation of unidirectional anisotropy. The layer thickness in NiFe/DyCo films has been determined by comparison of signals of the polar magneto-optical Kerr effect from a reference DyCo film and a hard magnetic layer of the exchange-biased structure. The layer thickness obtained is one order of magnitude larger than that characteristic of ferromagnet-antiferromagnet bilayer films. The mechanism of magnetization reversal of the structure under study has been explained within the model suggesting the formation of 180A degrees boundaries in the interface.
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