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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Pankrats A. I., Abramova G. M., Tugarinov V. I., Vorotynov A. M., Zharkov S. M., Zeer G. M., Velikanov D. A., Sokolov V. V., Boehm M.
Заглавие : Magnetic and structure investigations of heterostructures based on a cUcRs[[D]]2[[/D]] single crystal
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 214. - ISBN 978-5-7444-3124-2
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Патрин, Геннадий Семёнович, Шиян, Ярослав Германович, Патрин, Константин Геннадьевич, Юркин, Глеб Юрьевич
Заглавие : Синтез и магнитные свойства пленок [(CoP)soft/NiP/(CoP)hard/ NiP]n
Коллективы : "Решетневские чтения", международная научно-практическая конференция
Место публикации : Решетневские чтения: материалы XIX Междунар. науч. конф. : в 2-х ч. - Красноярск: Сибирский государственный аэрокосмический университет им. акад. М. Ф. Решетнева, 2015. - Ч. 1. - С. 539-541. - ISSN 1990-7702
Примечания : Библиогр.: 5
Ключевые слова (''Своб.индексиров.''): магнитные гетероструктуры--петля гистерезиса--межслоевое взаимодействие--магнитная пружина--magnetic heterostructures--hysteresis loop--interlayer coupling--magnetic spring
Аннотация: В многослойных пленках Co-Ni-P обнаружено изменение формы петли намагничивания при сопряжении магнитомягкого и магнитожесткого слоев, введение немагнитной прослойки влияет на перемагничивание структуры. Делается вывод о необходимости учета биквадратичного взаимодействия при рассмотрении межслоевых взаимодействий.While studying the Co-Ni-P multilayers we found the variation in the shape of magnetization loop at the conjugation of magnetically soft and magnetically hard layers. The insertion of a nonmagnetic spacer significantly affects magnetization reversal in the structure. We conclude that it is necessary to take into account the biquadratic interaction in studying the interlayer coupling.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B., Bruning J. W.
Заглавие : Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms
Место публикации : Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст.183103. - ISSN 0003-6951, DOI 10.1063/1.2800889
Примечания : Cited References: 24
Предметные рубрики: CARBON
GAS
Ключевые слова (''Своб.индексиров.''): electronic properties--energy gap--graphite--hydrogen--semiconductor materials--superlattices--electronic spectra--graphene sheets--quasi-two-dimensional heterostructures--semiconducting nanostructures--nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Sadreev A. F.
Заглавие : Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 1996. - Vol. 8, Is. 45. - P.8869-8887. - ISSN 0953-8984, DOI 10.1088/0953-8984/8/45/020
Примечания : Cited References: 38
Предметные рубрики: SEMICONDUCTOR DOUBLE-BARRIER
OSCILLATING QUANTUM-WELL
DEPENDENT TRANSPORT
INFRARED-RADIATION
TUNNELING TIMES
HETEROSTRUCTURES
TRANSMISSION
MODEL
FREQUENCIES
COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berman G. P., Bulgakov E. N., Campbell D. K., Sadreev A. F.
Заглавие : Resonant tunneling in time-periodically modulated semiconductor nanostructures
Место публикации : Physica B. - 1996. - Vol. 225, Is. 1-2. - P.1-22. - ISSN 0921-4526, DOI 10.1016/0921-4526(96)00233-5
Примечания : Cited References: 39
Предметные рубрики: DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Varnakov S. N., Yakovlev I. A., Lyashchenko S. A., Tarasov I. A., Molokeev M. S., Belyaev B. A., Zharkov S. M., Ovchinnikov S. G., Bartolomé J., Badía-Romano L., Rubín J.
Заглавие : MBE of iron silicide heterostructures for spintronics
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.3. - P.213. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task
Ключевые слова (''Своб.индексиров.''): molecular beam epitaxy--iron silicides--spintronic devices
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Fedorov A. S., Avramov P. V.
Заглавие : Spin polarization of zgnr4/lsmo(001) heterostructures: mno-terminated spinterface
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P10.28. - P.496. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): lsmo--zigzag graphene nanoribbons--dft--spin polarization--zgnr
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Parshin A. S., Igumenov A. Y., Mikhlin Y. L., Pchelyakov O. P., Zhigalov V. S.
Заглавие : Electron spectroscopy of iron disilicide
Место публикации : Tech. Phys. - 2016. - Vol. 61, Is. 9. - P.1418-1422. - ISSN 10637842 (ISSN), DOI 10.1134/S1063784216090176
Примечания : Cited References: 33
Предметные рубрики: SCATTERING CROSS-SECTIONS
ENERGY-LOSS SPECTROSCOPY
QUANTITATIVE-ANALYSIS
LOSS SPECTRA
SURFACE
SI
HETEROSTRUCTURES
INTERFACE
PARAMETER
PHASE
Аннотация: We have reported on the results of a complex investigation of iron disilicide FeSi2 using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi2 is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy. © 2016, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Kuzubov A. A., Popov Z. I.
Заглавие : VS2/7graphene heterostructures as promising anode material for Li-ion batteries
Место публикации : J. Phys. Chem. C. - 2017. - Vol. 121, Is. 43. - P.24179-24184. - ISSN 19327447 (ISSN), DOI 10.1021/acs.jpcc.7b07630
Примечания : Cited References: 64. - This work was supported by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh). N. S. M. acknowledges the financial support of the RFBR, through the research project No. 16- 32-60003 mol-a-dk. M. A. V. acknowledges the financial support of the RFBR, through the research project No. 16-32- 00252 mol-a. Z. I. P. gratefully acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2017-001) and the support of the RFBR through the research project No. 17-42- 190308 r-a.
Аннотация: Two-layer freestanding heterostructure consisting of VS2 monolayer and graphene was investigated by means of density functional theory computations as a promising anode material for lithium-ion batteries (LIB). We have investigated lithium atoms’ sorption and diffusion on the surface and in the interface layer of VS2/graphene heterostructure with both H and T configurations of VS2 monolayer. The theoretically predicted capacity of VS2/graphene heterostructures is high (569 mAh/g), and the diffusion barriers are considerably lower for the heterostructures than for bulk VS2, so that they are comparable to barriers in graphitic LIB anodes (∼0.2 eV). Our results suggest that VS2/graphene heterostructures can be used as a promising anode material for lithium-ion batteries with high power density and fast charge/discharge rates.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhilova O. V., Pankov S. Y., Sitnikov A. V., Kalinin Y. E., Volochaev M. N., Makagonov V. A.
Заглавие : Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures
Место публикации : J. Mater. Sci.: Mater. Electron. - 2019. - Vol. 30, Is. 13. - P.11859–11867. - ISSN 09574522 (ISSN) , DOI 10.1007/s10854-019-01503-w
Примечания : Cited References: 28. - The authors of the article want to express their gratitude to Professor S.A. Gridnev for helpful discussions. This work was supported by the Ministry of Education and Science in the framework of the state task (project No: 3.1867.2017/4.6).
Аннотация: The structure and electrical properties of In2O3 and SnO2 oxide semiconductors and heterostructures based on them has been experimentally investigated. The films were prepared by the method of layer-by-layer deposition using the ion-beam sputtering. The transition from the two-phase film of amorphous SnO2 and In2O3 islands, formed during the layer-by-layer deposition, to a multilayer structure consisting of the amorphous SnO2 and In2O3 continuous layers occurs with an increase in the bilayer thickness. The electrophysical properties of the (SnO2/In2O3)69 heterostructures are determined by the transition from the random distribution of SnO2 and In2O3 amorphous phases to a multilayer structure and the temperature range of measurement. For all studied systems, a consistent change in the prevailing mechanism of conductivity is observed at temperatures from 77 to 300 K. In (SnO2/In2O3)69 thin films with a bilayer thickness hbl ˂ 2.5 nm, change of the prevailing conduction mechanism takes place according to the next sequence: variable range hopping conduction over localized states near the Fermi level, hopping conduction over the nearest neighbors and hopping transfer of carriers excited into localized states near the band edges at temperatures close to room temperature.
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