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    Quantum transport via dot devices with arbitrarily strong interactions / A. B. Klyuchantsev, D. M. Dzebisashvili // Phys. Scr. - 2023. - Vol. 98, Is. 3. - Ст. 035811, DOI 10.1088/1402-4896/acb61e. - Cited References: 49. - The authors would like to thank V V Val'kov and S.V. Aksenov for fruitful discussions . - ISSN 0031-8949. - ISSN 1402-4896
   Перевод заглавия: Квантовый транспорт через точечные устройства со сколь угодно сильными взаимодействиями
Кл.слова (ненормированные):
non-equilibrium Green’s function -- Hubbard operator -- quantum transport -- quantum dot -- Anderson impurity model
Аннотация: The paper develops a theory of tunneling electron transport through atomic-scale systems (or briefly quantum dots) with arbitrarily strong interaction. The theory is based on a diagram technique for nonequilibrium Green’s functions defined on Hubbard operators. The use of Hubbard operators, describing many-body states of an entire quantum dot, makes it possible to represent the Hamiltonian of the quantum dot in a universal diagonal form and consider its coupling with two leads within the perturbation theory. It is shown that in the case when all Hubbard operators are defined for the same site, some rules of the diagram technique for Hubbard operators, initially developed for lattice models, have to be modified. As an example of the application of the modified theory, the current-voltage characteristics of the single-impurity Anderson model with infinitely large Coulomb repulsion are calculated. It is shown that taking into account the multiple electron tunneling processes with spin flips results in the dip in the center of the Lorentz distribution peak, describing the density of states of the one level Anderson impurity coupled with two leads. The emergence of this dip in the density of states leads to a peculiar feature in the bias voltage dependence of the differential conductivity, which can be detected experimentally.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Klyuchantsev, A. B.; Dzebisashvili, D. M.; Дзебисашвили, Дмитрий Михайлович
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    Implanted gallium impurity detection in silicon by impedance spectroscopy / D. Tetelbaum, A. Nikolskaya, M. Dorokhin [et al.] // Mater. Lett. - 2022. - Vol. 308, Part B. - Ст. 131244, DOI 10.1016/j.matlet.2021.131244. - Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886) . - ISSN 0167-577X
   Перевод заглавия: Обнаружение имплантированной примеси галлия в кремнии методом импедансной спектроскопии
Кл.слова (ненормированные):
Silicon -- Ion implantation -- Impedance spectroscopy -- Energy levels -- Ion channeling
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.

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Держатели документа:
Research Institute of Physics and Technology, Lobachevsky University, 23/3 Gagarina Avenue, Nizhny Novgorod, 603022, Russian Federation
Kirensky Institute of Physics, 50 st. Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tetelbaum, D.; Nikolskaya, A.; Dorokhin, M.; Vasiliev, V.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
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Influence of a strong magnetic field on the ac transport properties of Fe/SiO2/n-Si MIS structure / D. A. Smolyakov, M. V. Rautskii, I. A. Bondarev [et al.] // J. Exp. Theor. Phys. - 2022. - Vol. 135, Is. 3. - P. 377-382, DOI 10.1134/S1063776122090102. - Cited References: 38. - The authors thank the administration of the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance. The authors also thank D.A. Balaev for valuable discussion and M.N. Volochaev for submission of PEM images. This study was supported by the Russian Foundation for Basic Research, Krasnoyarsk Region government, and Krasnoyarsk Region Foundation for research-and-engineering activity (grant no. 20-42-243007) . - ISSN 1063-7761
Кл.слова (ненормированные):
Ac transports -- Impurity state -- Magnetic-field -- Magneto-impedance effects -- MIS structure -- Real part -- Schottky diodes -- State energy -- Strong magnetic fields -- Temperature dependence
Аннотация: The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the temperature dependences of the impedance real part observed in the magnetic field is accompanied by the magnetoimpedance effect and takes place only at a certain relative orientation between the magnetic field and the surface of the sample. It has been found that the magnetoimpedance effect is related to the recharge of impurity states. Impurity state energy Es in the presence and absence of the magnetic field has been calculated. The impurity state energy is a nonlinear function of magnetic field and can be qualitatively characterized in terms of the theory of the Zeeman giant effect in diluted magnetic semiconductors. Other mechanisms of magnetic field influence on ac transport in MIS structures, specifically, on the impurity state recharge, cannot be disregarded either. This points calls for further investigation. Obtained data may provide a deeper insight into the nature of magnetoresistive effects in semiconductors and be used to design new-generation microelectronic devices.

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Публикация на русском языке Влияние сильного магнитного поля на транспортные свойства МДП-структуры Fe/SiO2/n-Si на переменном токе [Текст] / Д. А. Смоляков, М. В. Рауцкий, И. А. Бондарев [и др.] // Журн. эксперим. и теор. физ. - 2022. - Т. 162 Вып. 3. - С. 432-439

Держатели документа:
Kirenskii Institute of Metal Physics, Krasnoyarsk Scientific Center, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич
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Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film / S. S. Aplesnin, A. N. Masyugin, V. V. Kretinin [et al.] // Phys. Solid State. - 2021. - Vol. 63, Is. 2. - P. 242-247, DOI 10.1134/S1063783421020025. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films” . - ISSN 1063-7834
Кл.слова (ненормированные):
magnetoimpedance -- IR spectroscopy -- cerium iron garnet -- thin films
Аннотация: In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.

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Публикация на русском языке Магнетосопротивление и ИК-спектр примесных состояний в пленке Ce3Fe5O12 [Текст] / С. С. Аплеснин, А. Н. Масюгин, В. В. Кретинин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 2. - С. 218-223

Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Masyugin, A. N.; Kretinin, V. V.; Konovalov, S. O.; Shestakov, N. P.; Шестаков, Николай Петрович
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Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth / V. A. Shestakov, M. M. Korshunov, Y. N. Togushova, O. V. Dolgov // Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст. 075008, DOI 10.1088/1361-6668/abff6f. - Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007. . - ISSN 0953-2048. - ISSN 1361-6668

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
ORDER-PARAMETER
   IMPURITIES
   SUPERCONDUCTORS
   STATES
   MODEL
Кл.слова (ненормированные):
unconventional superconductors -- iron pnictides -- iron chalcogenides -- impurity scattering -- penetration depth
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
RAS, PN Lebedev Phys Inst, Moscow 119991, Russia.
Donostia Int Phys Ctr, San Sebastian 20018, Spain.

Доп.точки доступа:
Shestakov, V. A.; Шестаков, Вадим Андреевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Togushova, Yu. N.; Тогушова Ю. Н.; Dolgov, O., V; Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Transition of metastable pyrrhotites to a stable phase state / V. V. Onufrienok, A. V. Chzhan, G. V. Bondarenko, G. Y. Yurkin // Inorg. Mater. - 2020. - Vol. 56, Is. 9. - P. 898-902, DOI 10.1134/S0020168520090137. - Cited References: 23 . - ISSN 0020-1685. - ISSN 1608-3172

РУБ Materials Science, Multidisciplinary
Рубрики:
MAGNETIC-PROPERTIES
TEMPERATURE
CHEMISTRY
Кл.слова (ненормированные):
mineral -- pyrite -- troilite -- impurity centers -- magnetization
Аннотация: Equilibrium phase relations of synthetic minerals prepared by annealing metastable iron sulfides, followed by prolonged isothermal storage in the Earth atmosphere, have been studied by X-ray diffraction. The results demonstrate that prolonged storage of synthetic pyrrhotites annealed at different temperatures makes it possible to identify metastable and stable phases of Fe and S compounds.

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Публикация на русском языке Переход метастабильных пирротинов в стабильное фазовое состояние [Текст] / В. В. Онуфриенок, А. В. Чжан, Г. В. Бондаренко, Г. Ю. Юркин // Неорган. матер. - 2020. - Т. 56 № 9. - С. 948-952

Держатели документа:
Krasnoyarsk State Agr Univ, Krasnoyarsk 660049, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Onufrienok, V. V.; Chzhan, A. V.; Bondarenko, G. V.; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
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    Korshunov, M. M.
    Influence of temperature on the impurity-induced s±→s++ transition in the multiband model of Fe-based superconductors / M. M. Korshunov, V. A. Shestakov // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.]; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст. I.O4. - P. 120. - Cited References: 3. - This work was supported by the “BASIS” Foundation for Development of Theoretical Physics and Mathematics, and the Krasnoyarsk Regional Fund of Science and Technology Support according to the participation in the VII Euro-Asian Symposium “Trends in Magnetism”: EASTMAG-2019 . - ISBN 978-5-9500855-7-4
   Перевод заглавия: Влияние температуры на вызванный примесями переход s+- - s++ в многозонной модели сверхпроводников на основе железа

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Shestakov, V. A.; Шестаков, Вадим Андреевич; Коршунов, Максим Михайлович; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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    Yurkin, G. Yu.
    Magnetic Properties of Fe1-xCoxSi Single Crystals at Low Co Impurity Concentrations / G. Y. Yurkin, G. S. Patrin, S. A. Yarikov // J. Sib. Fed. Univ. Math. Phys. - 2019. - Vol. 12, Is. 1. - P. 94-99 ; Журнал СФУ. Математика и физика, DOI 10.17516/1997-1397-2019-12-1-94-99. - Cited References: 17 . - ISSN 1997-1397. - ISSN 2313-6022
   Перевод заглавия: Магнитные свойства монокристаллов Fe1-x CoxSi при малой концентрации примеси Co
Кл.слова (ненормированные):
Co impurities -- iron silicide -- superparamagnetism -- силицид железа -- примесь Co -- суперпарамагнетизм
Аннотация: Magnetostatic properties of FeSi and Fe0,98Co0,02Si single crystals have been studied. It has been found that the temperature and field dependences of the magnetization of monocrystal FeSi are strongly affected by introduction of a small amount of Co (2 %). A description of the results were provided by a model accounting for the formation of superparamagnetic iron clusters, as well as Fe-Co complexes. It is assumed that Fe-Co complexes form a ferromagnetic phase, which is approximately 0.6% of the Fe0,98Co0,02Si sample weight.
В работе представлено исследование магнитостатических характеристик образцов FeSi и Fe0,98Co0,02Si. Обнаружено, что внесение небольшого количества примести Co(2%) значительно влияет на температурные и полевые зависимости намагниченности монокристалла FeSi. Результаты обработаны в рамках модели, учитывающей образование суперпарамагнитных кластеров железа, а также комплексов Fe-Co. Предполагается, что комплексы Fe-Co образуют ферромагнитную фазу, которая составляет примерно 0,6 % от массы образца Fe0,98Co0,02Si.

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Держатели документа:
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Svobodny 79, Krasnoyarsk 660041, Russia.
Kirensky Inst Phys SB RAS, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Yarikov, Stanislav A.; Яриков, Станислав Алексеевич; Юркин, Глеб Юрьевич

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10.

Shestakov, V. A.
Influence of temperature on the impurity-induced s ± → s ++ transition in the two-band model for Fe-based superconductors / V. Shestakov, M. M. Korshunov // J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст. 012065, DOI 10.1088/1742-6596/1389/1/012065. - Cited References: 45. - The reported study was funded by RFBR, project number 19-32-90109, and by the “BASIS” Foundation for Development of Theoretical Physics and Mathematics. . - ISSN 1742-6588. - ISSN 1742-6596
Аннотация: In Fe-based superconducting materials, the s ± state with the sign-changing gap in the clean limit could be changed to the sign-conserving s ++ state by nonmagnetic impurities. Previous results are obtained for the fixed temperature well below the superconducting critical temperature Tc . We study how the increasing temperature affects the transition between s ± and s ++ states in the two-band model. The calculations show that the s ± → s ++ transition appears to be dependent on temperature T, i.e. there exists a narrow range of impurity scattering rates, where the s ++ state in dirty superconductor at low temperature is transformed back to the s ± state by increasing T. With the nonmagnetic impurity scattering rate increasing, the temperature of such a reverse transition is shifted to Tc , while the s ++ state remains solely one for higher degree of disorder.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Шестаков, Вадим Андреевич; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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