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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Klyuchantsev A. B., Dzebisashvili D. M.
Заглавие : Quantum transport via dot devices with arbitrarily strong interactions
Колич.характеристики :22 с
Место публикации : Phys. Scr. - 2023. - Vol. 98, Is. 3. - Ст.035811. - ISSN 00318949 (ISSN), DOI 10.1088/1402-4896/acb61e. - ISSN 14024896 (eISSN)
Примечания : Cited References: 49. - The authors would like to thank V V Val'kov and S.V. Aksenov for fruitful discussions
Аннотация: The paper develops a theory of tunneling electron transport through atomic-scale systems (or briefly quantum dots) with arbitrarily strong interaction. The theory is based on a diagram technique for nonequilibrium Green’s functions defined on Hubbard operators. The use of Hubbard operators, describing many-body states of an entire quantum dot, makes it possible to represent the Hamiltonian of the quantum dot in a universal diagonal form and consider its coupling with two leads within the perturbation theory. It is shown that in the case when all Hubbard operators are defined for the same site, some rules of the diagram technique for Hubbard operators, initially developed for lattice models, have to be modified. As an example of the application of the modified theory, the current-voltage characteristics of the single-impurity Anderson model with infinitely large Coulomb repulsion are calculated. It is shown that taking into account the multiple electron tunneling processes with spin flips results in the dip in the center of the Lorentz distribution peak, describing the density of states of the one level Anderson impurity coupled with two leads. The emergence of this dip in the density of states leads to a peculiar feature in the bias voltage dependence of the differential conductivity, which can be detected experimentally.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tetelbaum D., Nikolskaya A., Dorokhin M., Vasiliev V., Smolyakov D. A., Lukyanenko A. V., Baron F. A., Tarasov A. S.
Заглавие : Implanted gallium impurity detection in silicon by impedance spectroscopy
Место публикации : Mater. Lett. - 2022. - Vol. 308, Part B. - Ст.131244. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2021.131244
Примечания : Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886)
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Rautskii M. V., Bondarev I. A., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Influence of a strong magnetic field on the ac transport properties of Fe/SiO2/n-Si MIS structure
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 135, Is. 3. - P.377-382. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122090102
Примечания : Cited References: 38. - The authors thank the administration of the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance. The authors also thank D.A. Balaev for valuable discussion and M.N. Volochaev for submission of PEM images. This study was supported by the Russian Foundation for Basic Research, Krasnoyarsk Region government, and Krasnoyarsk Region Foundation for research-and-engineering activity (grant no. 20-42-243007)
Аннотация: The ac transport properties of a Fe/SiO2/n-Si MIS structure made in the form of a Schottky diode have been studied in magnetic fields up to 9 T. A shift in the maxima of the temperature dependences of the impedance real part observed in the magnetic field is accompanied by the magnetoimpedance effect and takes place only at a certain relative orientation between the magnetic field and the surface of the sample. It has been found that the magnetoimpedance effect is related to the recharge of impurity states. Impurity state energy Es in the presence and absence of the magnetic field has been calculated. The impurity state energy is a nonlinear function of magnetic field and can be qualitatively characterized in terms of the theory of the Zeeman giant effect in diluted magnetic semiconductors. Other mechanisms of magnetic field influence on ac transport in MIS structures, specifically, on the impurity state recharge, cannot be disregarded either. This points calls for further investigation. Obtained data may provide a deeper insight into the nature of magnetoresistive effects in semiconductors and be used to design new-generation microelectronic devices.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Masyugin A. N., Kretinin V. V., Konovalov S. O., Shestakov N. P.
Заглавие : Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 2. - P.242-247. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783421020025
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films”
Аннотация: In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Onufrienok V. V., Chzhan A. V., Bondarenko G. V., Yurkin G. Yu.
Заглавие : Transition of metastable pyrrhotites to a stable phase state
Место публикации : Inorg. Mater. - 2020. - Vol. 56, Is. 9. - P.898-902. - ISSN 0020-1685, DOI 10.1134/S0020168520090137. - ISSN 1608-3172(eISSN)
Примечания : Cited References: 23
Предметные рубрики: MAGNETIC-PROPERTIES
TEMPERATURE
CHEMISTRY
Аннотация: Equilibrium phase relations of synthetic minerals prepared by annealing metastable iron sulfides, followed by prolonged isothermal storage in the Earth atmosphere, have been studied by X-ray diffraction. The results demonstrate that prolonged storage of synthetic pyrrhotites annealed at different temperatures makes it possible to identify metastable and stable phases of Fe and S compounds.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Korshunov M. M., Shestakov V. A.
Заглавие : Influence of temperature on the impurity-induced s±→s++ transition in the multiband model of Fe-based superconductors
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.]; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.I.O4. - P.120. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 3. - This work was supported by the “BASIS” Foundation for Development of Theoretical Physics and Mathematics, and the Krasnoyarsk Regional Fund of Science and Technology Support according to the participation in the VII Euro-Asian Symposium “Trends in Magnetism”: EASTMAG-2019
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yurkin G. Yu., Patrin G. S., Yarikov, Stanislav A.
Заглавие : Magnetic Properties of Fe1-xCoxSi Single Crystals at Low Co Impurity Concentrations
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2019. - Vol. 12, Is. 1. - P.94-99. - ISSN 1997-1397, DOI 10.17516/1997-1397-2019-12-1-94-99; \b Журнал СФУ. Математика и физика. - ISSN 2313-6022(eISSN)
Примечания : Cited References: 17
Ключевые слова (''Своб.индексиров.''): co impurities--iron silicide--superparamagnetism--силицид железа--примесь co--суперпарамагнетизм
Аннотация: Magnetostatic properties of FeSi and Fe0,98Co0,02Si single crystals have been studied. It has been found that the temperature and field dependences of the magnetization of monocrystal FeSi are strongly affected by introduction of a small amount of Co (2 %). A description of the results were provided by a model accounting for the formation of superparamagnetic iron clusters, as well as Fe-Co complexes. It is assumed that Fe-Co complexes form a ferromagnetic phase, which is approximately 0.6% of the Fe0,98Co0,02Si sample weight.В работе представлено исследование магнитостатических характеристик образцов FeSi и Fe0,98Co0,02Si. Обнаружено, что внесение небольшого количества примести Co(2%) значительно влияет на температурные и полевые зависимости намагниченности монокристалла FeSi. Результаты обработаны в рамках модели, учитывающей образование суперпарамагнитных кластеров железа, а также комплексов Fe-Co. Предполагается, что комплексы Fe-Co образуют ферромагнитную фазу, которая составляет примерно 0,6 % от массы образца Fe0,98Co0,02Si.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M.
Заглавие : Influence of temperature on the impurity-induced s ± → s ++ transition in the two-band model for Fe-based superconductors
Коллективы : Euro-Asian Symposium "Trends in MAGnetism"
Место публикации : J. Phys. Conf. Ser. - 2019. - Vol. 1389, Is. 1. - Ст.012065. - ISSN 1742-6588, DOI 10.1088/1742-6596/1389/1/012065. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 45. - The reported study was funded by RFBR, project number 19-32-90109, and by the “BASIS” Foundation for Development of Theoretical Physics and Mathematics.
Аннотация: In Fe-based superconducting materials, the s ± state with the sign-changing gap in the clean limit could be changed to the sign-conserving s ++ state by nonmagnetic impurities. Previous results are obtained for the fixed temperature well below the superconducting critical temperature Tc . We study how the increasing temperature affects the transition between s ± and s ++ states in the two-band model. The calculations show that the s ± → s ++ transition appears to be dependent on temperature T, i.e. there exists a narrow range of impurity scattering rates, where the s ++ state in dirty superconductor at low temperature is transformed back to the s ± state by increasing T. With the nonmagnetic impurity scattering rate increasing, the temperature of such a reverse transition is shifted to Tc , while the s ++ state remains solely one for higher degree of disorder.
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