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3d-substitution design in a Mott insulator MnS [Text] / G. Abramova, V. Sokolov [et al.] // Russian-Japanese Workshop "State of Materials Research and New Trends in Material Science". - 2009. - P. 45-47

Доп.точки доступа:
Abramova, G. M.; Абрамова, Галина Михайловна; Sokolov, V.; Petrakovskiy, G. A.; Петраковский, Герман Антонович; Mita, Y.; Kagayama, T.; Bovina, A. F.; Бовина, Ася Федоровна; Pichyugin, A.; Russian-Japanese Workshop "State of Materials Research and New Trends in Material Science"(2009 ; Aug ; 3-5 ; Novosibirsk)
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A comparative study of transport properties of composites HTSC+MgTiO3 and HTSC + NiTiO3. The effect of paramagnetic NiTiO3 / M. I. Petrov, D. A. Balaev, K. A. Shaikhutdinov, K. S. Aleksandrov // Physica C-Superconductivity and its Applications. - 2000. - Vol. 341-348, Pt. 3. - P. 1863-1864, DOI 10.1016/S0921-4534(00)01217-X . - ISSN 0921-4534
Кл.слова (ненормированные):
Composite materials -- Copper oxides -- Josephson junction devices -- Magnesium compounds -- Nickel compounds -- Paramagnetism -- Superconductivity -- Thermal effects -- Transport properties -- Yttrium compounds -- Abrikosov vortices flow -- Superconductor insulator superconductor junction -- Thermally activated phase slippage -- High temperature superconductors
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7+NiTiO3 and Y3/4Lu1/4Ba2Cu3O7+MgTiO3 with insulator volume content 7.5% and 15% modelling a network of Superconductor-Insulator-Superconductor (S-I-S) junctions have been prepared. The ?(T) dependences of composites HTSC+MgTiO3 are described well by the mechanism of Thermally Activated Phase Slippage (TAPS). The anomalous behavior of resistivity ?(T) of HTSC+NiTiO3 composites manifesting as a kink on ?(T) curves at some temperature Tm have been observed. In the temperature range Tm < T < TC the dissipation is Ohmic while below Tm the CVCs are strongly non-linear. This peculiarity is interpreted as arisen owing to Abrikosov vortices flow.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; International conference on materials and mechanisms of superconductivity high temperature superconductors(6 ; 2000 ; Feb. ; 20-25 ; Houston, Texas, USA)
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Abramova, G. M.
Metal-insulator transition, magnetoresistance, and magnetic properties of 3d-sulfides (Review) / G. M. Abramova, G. A. Petrakovskii // Low Temp. Phys. - 2006. - Vol. 32, Is. 8-9. - P. 725-734 ; Физика низких температур, DOI 10.1063/1.2219495. - Cited References: 74 . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
GIANT-MAGNETORESISTANCE
   PHASE-TRANSITION
   ALPHA-MNS
   COLOSSAL MAGNETORESISTANCE
   SINGLE-CRYSTALS
   FES-MNS
   SULFIDES
   FERROMAGNETISM
   SEMICONDUCTORS
   TEMPERATURE
Аннотация: The results of a study of the transport and magnetic properties of some sulfides of 3d elements are reported. The concentration transitions with a change of conductivity type and a change of magnetic order are considered, and the features of the colossal magnetoresistance in FexMn1-xS and CuVxCr1-xS2 solid solutions are discussed.

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Держатели документа:
Russian Acad Sci, LV Kirenskii Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
L. V. Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Akademgorodok 660036, Russian Federation

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Абрамова, Галина Михайловна

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Another mechanism for the insulator-metal transition observed in Mott insulators / A. G. Gavriliuk [et al.] // Phys. Rev. B. - 2008. - Vol. 77, Is. 15. - Ст. 155112, DOI 10.1103/PhysRevB.77.155112. - Cited References: 26 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
ELECTRONIC-STRUCTURE
   SPIN TRANSITION
   HIGH-PRESSURES
   GDFE3(BO3)(4)
Аннотация: The two widely accepted mechanisms of the insulator-metal Mott-Hubbard transitions which have been considered up until now are driven by the band-filling or bandwidth effects. We found a different mechanism of the Mott-Hubbard insulator-metal transition, which is controlled instead by the changes in the Mott-Hubbard energy U. In contrast to the changes in the bandwidth W in the "bandwidth control" scenario or to the variations of the band-filling n parameter in the "band-filling" scenario, a dramatic decrease in the Mott-Hubbard energy U plays the key role in this mechanism. We have experimentally observed this type of the insulator metal transition in the transition metal oxide BiFeO(3). The decrease in the Mott-Hubbard energy is caused by the high-spin-low-spin crossover in the electronic d shell of 3d transition metal ion Fe(3+) with d(5) configuration under high pressure. The pressure-induced spin crossover in BiFeO(3) was investigated and confirmed by synchrotron x-ray diffraction, nuclear forward scattering, and x-ray emission methods. The insulator-metal transition at the same pressures was found by the optical absorption and dc resistivity measurements.

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Держатели документа:
[Gavriliuk, Alexander G.
Struzhkin, Viktor V.] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA
[Gavriliuk, Alexander G.
Lyubutin, Igor S.] Russian Acad Sci, Inst Crystallog, Moscow 119333, Russia
[Gavriliuk, Alexander G.] RAS, Inst High Pressure Phys, Moscow 142190, Russia
[Ovchinnikov, Sergey G.] Russian Acad Sci, Siberian Div, Inst Phys, Krasnoyarsk 660036, Russia
[Ovchinnikov, Sergey G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Hu, Michael Y.
Chow, Paul] HPCAT, Argonne, IL 60439 USA
[Hu, Michael Y.
Chow, Paul] ANL, APS, Carnegie Inst Washington, Argonne, IL 60439 USA
ИФ СО РАН
Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington, DC 20015, United States
Institute of Crystallography, Russian Academy of Sciences, Leninsky Prospekt 59, Moscow 119333, Russian Federation
Institute for High Pressure Physics, RAS, Troitsk, 142190, Russian Federation
Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
HPCAT, Carnegie Institution of Washington, APS, Argonne, IL 60439, United States

Доп.точки доступа:
Gavriliuk, A. G.; Struzhkin, V. V.; Lyubutin, I. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Hu, M. Y.; Chow, P.
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Aplesnin, S. S.
Influence of the four-spin exchange interaction on the magnetic properties of manganites / S. S. Aplesnin, N. I. Piskunova // J. Phys.: Condens. Matter. - 2005. - Vol. 17, Is. 37. - P. 5881-5888, DOI 10.1088/0953-8984/17/37/023. - Cited References: 18 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
METAL-INSULATOR-TRANSITION
   PHASE
   SUSCEPTIBILITY
   LA1-XSRXMNO3
   FERROMAGNET
   TRANSPORT
Кл.слова (ненормированные):
Computer simulation -- Ion exchange -- Lanthanum compounds -- Magnetic properties -- Monte Carlo methods -- Phase diagrams -- Phase transitions -- Four-spin exchange interaction -- Magnetic phase diagram -- Manganites -- Metal-dielectric transition -- Manganese compounds
Аннотация: It is shown that non-Heisenberg exchange interaction should be taken into account to reproduce the magnetic phase diagram of La(1-x)A(x)MnO(3) (A = Ca, Sr) using only effective exchange parameters and spins. The formation of the four-spin exchange arises from carrier hopping and coincides with the critical concentration metal-dielectric transition. The two- and four-spin exchange parameters are determined by Monte Carlo simulations.

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Держатели документа:
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660036, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
M F Reshetneva Aircosmic Siberian State University, Krasnoyarsk 660036, Russian Federation
L V Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Science, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Piskunova, N. I.; Аплеснин, Сергей Степанович
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Arkhipkin, V. G.
Effect of electromagnetically induced transparency on the spectrum of defect modes in a one-dimensional photonic crystal / V. G. Arkhipkin, S. A. Myslivets // Quantum Electronics. - 2009. - Vol. 39, Is. 2. - P. 157-162, DOI 10.1070/QE2009v039n02ABEH013813 . - ISSN 1063-7818
Кл.слова (ненормированные):
Electromagnetically induced trans- parency -- Photonic crystals -- Defect layers -- Defect mode -- Electromagnetically induced trans- parency -- One dimensional photonic crystal -- Spatial in-homogeneity -- Spatial overlap -- Transmission spectrums -- Crystal atomic structure -- Defects -- Silicon on insulator technology -- Transparency -- Photonic crystals
Аннотация: We studied the transmission spectrum of a one-dimensional photonic crystal containing a defect layer in which electromagnetically induced transparency is possible. The analysis is performed taking into account the spatial inhomogeneity of interacting fields in the photonic crystal. It is found that the transmission spectrum of such a photonic crystal depends on the spatial overlap of defect modes excited by probe and control radiations. It is shown that electromagnetically induced transparency can result in a considerable narrowing of the defect mode spectrum. В© 2009 Kvantovaya Elektronika and Turpion Ltd.

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Держатели документа:
L.V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Academgorodok, 660036, Krasnoyarsk, Russian Federation
Siberian Federal University, prosp. Svobodnyi 79, 660041 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Myslivets, S. A.; Мысливец, Сергей Александрович; Архипкин, Василий Григорьевич
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Defect modes in real photonic crystals / V. G. Arkhipkin [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P183-185, DOI 10.1109/CAOL.2008.4671857 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Defect modes -- Detect mode -- Number of layers -- Photonic crystal structures -- Crystal atomic structure -- Crystal structure -- Defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Optical devices -- Photonic band gap -- Silicon on insulator technology -- Photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.

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Держатели документа:
L.V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
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    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
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ELECTRIC AND MAGNETIC-PROPERTIES OF MES.FE2O3 OXYSULFIDES / G. V. LOSEVA [и др.] // Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 6. - P. 1765-1769. - Cited References: 16 . - ISSN 0367-3294

РУБ Physics, Condensed Matter
Рубрики:
INSULATOR TRANSITION

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Доп.точки доступа:
LOSEVA, G. V.; MUKOED, G. M.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; RYABINKINA, L. I.
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10.

Electronic band structure and superconducting properties of SnAs / P. I. Bezotosnyi [et al.] // Phys. Rev. B. - 2019. - Vol. 100, Is. 18. - Ст. 184514, DOI 10.1103/PhysRevB.100.184514. - Cited References: 45. - The authors thank E. Z. Kuchinskii and M. V. Sadovskii for valuable discussions. This work was performed using equipment of the LPI Shared Facility Center and the resource center "Physical methods of surface investigation" (PMSI) of the Research park of Saint Petersburg State University. V.M.P. acknowledges Russian Foundation for Basic Research (RFBR) Grant No. 16-29-03330. P.I.B., K.A.D., A.V.S., K.S.P., A.V.M., A.S.U., A.Y.T., and S.Y.G. were supported within the state assignment of the Ministry of Science and Higher Education of the Russian Federation (Project No. 0023-2019-0005). A.G.R. acknowledges Saint Petersburg State University for research Grant No. 40990069. I.A.N., A.A.S., and N.S.P. acknowledge Russian Foundation for Basic Research (RFBR) Grants No. 17-02-00015 and No. 19-32-50001, the Program No. 12 of Fundamental Research of the Presidium of RAS. N.S.P. was also supported in part by the President of Russia grant for young scientists No. MK-1683.2019.2. . - ISSN 2469-9950. - ISSN 2469-9969

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
TOPOLOGICAL CRYSTALLINE INSULATOR
GAP STRUCTURE
SPECTROSCOPY
Аннотация: We report a comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy range and density functional theory (DFT) within generalized gradient approximation (GGA). The DFT/GGA calculations were done including spin-orbit coupling for both bulk and (111) slab crystal structures. Comparison of the DFT/GGA band dispersions with ARPES data shows that the spectrum for the (111) slab much better describes ARPES data than that for the bulk. In addition, we studied experimentally superconducting properties of SnAs by specific heat, magnetic susceptibility, magnetotransport measurements, and Andreev reflection spectroscopy. Temperature dependencies of the superconducting gap and of the specific heat were found to be well consistent with those expected for the single band BCS superconductors with an isotropic s-wave order parameter. Despite spin-orbit coupling present in SnAs, our data show no signatures of a potential unconventional superconductivity, and the characteristic BCS ratio 2Δ/Tc=3.48–3.73 is very close to the BCS value in the weak coupling limit.

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Держатели документа:
PN Lebedev Phys Inst, VL Ginzburg Ctr High Tc Superconduct & Quantum Ma, Moscow 119991, Russia.
Natl Res Univ Higher Sch Econ, Fac Phys, Moscow 101000, Russia.
Russian Acad Sci, Inst Electrophys, Ural Branch, Ekaterinburg 620016, Russia.
RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk 660036, Russia.
St Petersburg State Univ, Fac Phys, St Petersburg 198504, Russia.
St Petersburg State Univ, Res Pk, St Petersburg 198504, Russia.
St Petersburg State Univ, Lab Elect & Spin Struct Nanosyst, St Petersburg 198504, Russia.
Natl Res Univ Higher Sch Econ, Quantum Nanoelect Lab, Moscow 101000, Russia.

Доп.точки доступа:
Bezotosnyi, P. I.; Dmitrieva, K. A.; Sadakov, A. V.; Pervakov, K. S.; Muratov, A. V.; Usoltsev, A. S.; Tsvetkov, A. Yu.; Gavrilkin, S. Yu.; Pavlov, N. S.; Slobodchikov, A. A.; Слободчиков, А. А.; Vilkov, O. Yu.; Rybkin, A. G.; Nekrasov, I. A.; Pudalov, V. M.; Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [16-29-03330, 17-02-00015, 19-32-50001]; Ministry of Science and Higher Education of the Russian Federation [0023-2019-0005]; Saint Petersburg State University [40990069]; Presidium of RASRussian Academy of Sciences [12]; [MK-1683.2019.2]
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