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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G.
Заглавие : Analysis of the sequence of insulator-metal phase transitions at high pressure in systems with spin crossovers
Место публикации : J. Experim. Theor. Phys. - 2013. - Vol. 116, Is. 1. - P.123-127. - DOI 10.1134/S1063776113010111
Примечания : Cited References: 18. - This study was supported in part by the Russian Foundation for Basic Research (project. no. 100200251), the Presidential Program of Support for Lead ing Scientific Schools in Russia (project no. NSh 1044.2012.2), the Presidium of the Russian Academy of Sciences (program no. 2.16), and the Siberian Branch of the Russian Academy of Sciences (program nos. 96 and 97), and the Siberian Federal University (project no. F11)
Аннотация: Possible variants of the Mott–Hubbard phase transitions at high pressure in systems with spin cross-overs are considered. Owing to the universal character of the dependence of the effective Hubbard parameterUeff(dn) on the average number of d electrons, which is determined by the presence of spin crossovers, cascadesof insulator–metal–insulator phase transitions in systems with d3, d6, and d8 configurations become possible.Moreover, the systems with d6 configuration can exhibit transitions from a metal in the absence of external pres-sure to an insulator at high pressure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Abramova G. M., Petrakovskii G. A., Sokolov V. V., Velikanov D. A., Vorotynov A. M., Bovina A. F., Amirov A. A., Aliev A. M., Khanov L. N., Patrin G. S.
Заглавие : New magnetic materials Cu x Mn1 − x S with a metal-insulator transition
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 54, Is. 3. - P.531–536. - ISSN 1063-7834, DOI 10.1134/S106378341203002X
Примечания : Cited References: 9
Предметные рубрики: Alpha-MnS
Manganese
Аннотация: This paper reports on first results of the synthesis and study of the thermal, structural, electrical, resonance, and magnetic properties of new sulfide materials Mex Mn1 – S (Me = Cu, 0 ˂ x ˂ 0.2) synthesized based on manganese monosulfide. The materials have a NaCl cubic structure at 300 K and undergo a con centration metal–insulator transition with increasing degree of substitution and with varying temperature. The magnetic transition occurs in the region of the heat capacity anomaly. The Néel temperature is slightly dependent on the copper concentration. The samples with a high copper content exhibit metallic conduction at T ˂ 260 K and semiconductor conduction at T ˃ 260 K.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mita Y., Kagayama T., Abramova G. M., Petrakovskii G. A., Sokolov V.V.
Заглавие : Metallic transition of the colossal magnetoresistance material FexMn1-xS (x= 0.18) under high pressure
Место публикации : J. Korean Phys. Soc. - 2013. - Vol. 63, Is. 3. - P.325-328. - ISSN 0374-4884, DOI 10.3938/jkps.63.325
Ключевые слова (''Своб.индексиров.''): metallization--mott insulator--pressure
Аннотация: A pressure-induced phase transition in the colossal magnetoresistance (CMR) material Fe0.18Mn0.82S was studied by using infrared (IR) reflection and X-ray diffraction (XRD) at pressures up to 40 GPa at room temperature. XRD shows that the crystal structure of this sample is a NaCl-type structure at ambient pressure, that a structural change starts around 17 GPa, and that a mixed phase mixed between the NaCl-type low-pressure phase and an unknown structure high pressure phase continues up to around 25 GPa. On the other hand, the IR reflectivity increases with increasing pressure from 15 GPa and becomes remarkably high around 20 GPa. The spectra do not show any changes from 30 GPa. From these results, we conclude that the phase transition of Fe0.18Mn0.82S at room temperature starts around 15 GPa and is completed around 30 GPa and that the high-pressure phase is not a band-overlapping semimetal but a true metal. В© 2013 The Korean Physical Society.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Orlov Yu.S., Dudnikov V. A.
Заглавие : Temperature and field dependent electronic structure and magnetic properties of LaCoO3 and GdCoO3
Коллективы : Moscow International Symposium on Magnetism
Место публикации : J. Magn. Magn. Mater./ Moscow international symposium on magnetism (5 ; 2011 ; 21–25 aug. ; Moscow): Elsevier Science BV, 2012. - Vol. 324, Is. 21. - P.3584-3587. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2012.02.096
Примечания : Cited References: 25. - We acknowledge discussions with G.A. Sawatzky, M.W. Haverkort, S.V. Nikolaev and V.A. Gavrichkov. This work is supported by the Siberia-Urals integration project no. 44, SBRAS project no. 38, Presidium RAS Program 20, RFBR Grant no. 10-02-00251.
Предметные рубрики: SPIN-STATE TRANSITION
CHARGE
Ключевые слова (''Своб.индексиров.''): electronic structure--spin crossover--insulator-metal transition
Аннотация: The transformation of the band structure of LaCoO3 in the applied magnetic field has been theoretically studied. If the field is below its critical value B-C approximate to 65 T, the dielectric band gap decreases with the field, thus giving rise to negative magnetoresistance that is highest at T approximate to 300 divided by 500 K. The critical field is related to the crossover between the low- and high-spin terms of Co3+ ions. The spin crossover results in an insulator-metal transition induced by an increase in the magnetic field. Similar calculations have been done for GdCoO3 which is characterized by large spin gap similar to 2000K. (C) 2012 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nikolaev S. V., Ovchinnikov S. G.
Заглавие : Effect of hole doping on the electronic structure and the Fermi surface in the Hubbard model within norm-conserving cluster pertubation theory
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 114, Is. 1. - P.118-131. - ISSN 1063-7761, DOI 10.1134/S1063776111150143
Примечания : Cited References: 51. - This study was supported financially by the Russian Foundation for Basic Research (project nos. 10-02-90725-mob_st and 09-02-00127), Program 18.7 of the Presidium of the Russian Academy of Sciences, the Federal Target Program "Personnel" (state contract no. P891), and the integrated project no. 40 of the Siberian Branch of the Russian Academy of Sciences.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
NARROW ENERGY-BANDS
CORRELATED ELECTRONS
PSEUDOGAP
EVOLUTION
La2-XSRXCuO4
INSULATOR
Аннотация: The concentration dependences of the band structure, spectral weight, density of states, and Fermi surface in the paramagnetic state are studied in the Hubbard model within cluster pertubation theory with 2 x 2 clusters. Representation of the Hubbard X operators makes it possible to control conservation of the spectral weight in constructing cluster perturbation theory. The calculated value of the ground-state energy is in good agreement with the results obtained using nonperturbative methods such as the quantum Monte Carlo method, exact diagonalization of a 4 x 4 cluster, and the variational Monte Carlo method. It is shown that in the case of hole doping, the states in the band gap (in-gap states) lie near the top of the lower Hubbard band for large values of U and near the bottom of the upper band for small U. The concentration dependence of the Fermi surface strongly depends on hopping to second (t') and third (t '') neighbors. For parameter values typical of HTSC cuprates, the existence of three concentration regions with different Fermi surfaces is demonstrated. It is shown that broadening of the spectral electron density with an energy resolution typical of contemporary ARPES leads to a pattern of arcs with a length depending on the concentration. Only an order-of-magnitude decrease in the linewidth makes it possible to obtain the true Fermi surface from the spectral density. The kinks associated with strong electron correlations are detected in the dispersion relation below the Fermi level.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Tarasov A. S., Ivanenko A. A., Bykova L. E., Nemtsev I. V., Eremin E. V., Yozhikova E. V.
Заглавие : Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation
Коллективы : Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
Место публикации : Semicond. Sci. Technol.: IOP Publishing, 2014. - Vol. 29, Is. 8. - Ст.82001. - ISSN 0268-1242, DOI 10.1088/0268-1242/29/8/082001. - ISSN 1361-6641
Примечания : Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156.
Предметные рубрики: TRANSPARENT CONDUCTING OXIDES
Ga-DOPED ZnO
LOW-TEMPERATURE
HIGH-PERFORMANCE
SUBSTRATE-TEMPERATURE
INSULATOR-TRANSITION
ROOM-TEMPERATURE
TRANSISTORS
COMBUSTION
PHOTOREDUCTION
Ключевые слова (''Своб.индексиров.''): indium oxide thin films--autowave oxidation--metal-semiconductor transition--uv irradiation--photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrov M. I., Balaev D. A., Shaikhutdinov K. A., Aleksandrov K. S.
Заглавие : A comparative study of transport properties of composites HTSC+MgTiO3 and HTSC + NiTiO3. The effect of paramagnetic NiTiO3
Коллективы : International conference on materials and mechanisms of superconductivity high temperature superconductors
Место публикации : Physica C-Superconductivity and its Applications. - 2000. - Vol. 341-348, Pt. 3. - P.1863-1864. - ISSN 0921-4534, DOI 10.1016/S0921-4534(00)01217-X
Ключевые слова (''Своб.индексиров.''): composite materials--copper oxides--josephson junction devices--magnesium compounds--nickel compounds--paramagnetism--superconductivity--thermal effects--transport properties--yttrium compounds--abrikosov vortices flow--superconductor insulator superconductor junction--thermally activated phase slippage--high temperature superconductors
Аннотация: Bulk composites Y3/4Lu1/4Ba2Cu3O7+NiTiO3 and Y3/4Lu1/4Ba2Cu3O7+MgTiO3 with insulator volume content 7.5% and 15% modelling a network of Superconductor-Insulator-Superconductor (S-I-S) junctions have been prepared. The ?(T) dependences of composites HTSC+MgTiO3 are described well by the mechanism of Thermally Activated Phase Slippage (TAPS). The anomalous behavior of resistivity ?(T) of HTSC+NiTiO3 composites manifesting as a kink on ?(T) curves at some temperature Tm have been observed. In the temperature range Tm < T < TC the dissipation is Ohmic while below Tm the CVCs are strongly non-linear. This peculiarity is interpreted as arisen owing to Abrikosov vortices flow.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lobach K. A., Ovchinnikov S. G., Ovchinnikova T. M.
Заглавие : Specific features of insulator-metal transitions under high pressure in crystals with spin crossovers of 3d ions in tetrahedral environment
Коллективы : program for supporting leading scientific schools [NSh-2886.2014.2], Presidium of the Russian Academy of Sciences [2.16]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 120, Is. 1. - P.132-138. - ISSN 1063, DOI 10.1134/S1063776115010045. - ISSN 10906509(eISSN)
Примечания : Cited References:13. - This work was supported by the program for supporting leading scientific schools (project no. NSh-2886.2014.2) and by the Presidium of the Russian Academy of Sciences within program no. 2.16.
Аннотация: For Mott insulators with tetrahedral environment, the effective Hubbard parameter U eff is obtained as a function of pressure. This function is not universal. For crystals with d 5 configuration, the spin crossover suppresses electron correlations, while for d 4 configurations, the parameter U eff increases after a spin crossover. For d 2 and d 7 configurations, U eff increases with pressure in the high-spin (HS) state and is saturated after the spin crossover. Characteristic features of the insulator-metal transition are considered as pressure increases; it is shown that there may exist cascades of several transitions for various configurations.
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