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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kosyrev N. N., Patrin G. S., Shiyan Ya. G., Volchenko E. N., Yakovchuk V. Yu., Komarov V. A., Semenov S. V.
Заглавие : Influence of the DyxCo1-x–Bi interface on the magnetic properties of DyxCo1-x/Bi/Py three-layer structures
Колич.характеристики :6 с
Место публикации : J. Supercond. Nov. Magn. - 2024. - Vol. 37, Is. 2. - P.419-424. - ISSN 15571939 (ISSN), DOI 10.1007/s10948-024-06690-0. - ISSN 15571947 (eISSN)
Примечания : Cited References: 15. - The authors are grateful to R.Yu. Rudenko for carrying out measurements using an atomic force microscopeThe research was conducted according to the state assignment of the Ministry of Science and Higher Education of the Russian Federation and the Federal State Autonomous Educational Institution of Higher Education Siberian Federal University (No. FSRZ-2023–0008)
Аннотация: The interlayer interactions in multilayer systems with a non-magnetic semimetallic interlayer are great of interest. The magnetic and structural properties of the DyxCo1-x/Bi/Py systems (17 ˂ x ˂ 26 at.%) have been studied. The temperature dependences of magnetization in the range 4.2–300 K were measured for the first time. The influence of the bismuth interlayer thickness on the exchange interaction between the DyCo and Py layers was found as well as the critical value of its thickness. The obtained atypical value of the period of exchange bias oscillations was explained by the formation of bismuth compounds with dysprosium–pnictogenides at bismuth thicknesses below the critical value. The interface was investigated by spectral ellipsometry in the range 2–5 eV. The information on the structure of the surface obtained by atomic force microscopy was used to create a multilayer model for fitting experimental ellipsometric data. Analysis of the optical properties showed that pnictogenide Dy3Bi2 is formed at the interface, which affects the general magnetic state of the samples studied.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Kobyakov A. V., Yushkov V. I., Anisimov I. O., Zharkov S. M., Semenov S. V., Moiseenko, Evgeniy T.
Заглавие : Influence of a thin V2O3 spacer on interlayer interactions in Fe-Ni/V2O3/FeNi film structures
Колич.характеристики :10 с
Место публикации : Processes. - 2023. - Vol. 11, Is. 7. - Ст.2084. - ISSN 22279717 (eISSN), DOI 10.3390/pr11072084
Примечания : Cited References: 25. - The research was conducted according to the state assignment of the Ministry of Science and Higher Education of the Russian Federation and the Federal State Autonomous Educational Institution of Higher Education Siberian Federal University (No. FSRZ-2023-0008)
Аннотация: In this paper, we explore the suggestions of the results of experimental studies on low-dimensional layered systems in FeNi/V2O3/FeNi film structures. The multifunctional material V2O3 is used as an interlayer between the magnetically active FeNi layers. The films were obtained by ultrahigh vacuum magnetron sputtering on a glass substrate with a base size of 10−10 Torr. It has been found that for V2O3 films, the decrease in the metal–semiconductor transition temperature increases significantly. Magnetic characteristics were studied on the MPMS-XL SQUID magnetometer. The exchange effect occurs both in the region where the oxide has a magnetic order and in the paramagnetic region. The latter is due to the effect of the magnetic panel in the oxide package. The phenomenon of oscillation of the exchange field occurs depending on the phenomenon of intermediate observation observed experimentally.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Visotin M. A., Sosedkin, Oleg A., Eremkin, Egor V.
Заглавие : MD investigations of of heat flow throw interfaces in 1D systems
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2023. - Vol. 16, Is. 3. - P.385-396. - ISSN 19971397 (ISSN); Журн. СФУ. Матем. и физ. - ISSN 23136022 (eISSN)
Примечания : Cited References: 26
Аннотация: Molecular dynamic calculations (MD) of heterogeneous 1D periodical systems are presented. It is proposed the new technique of direct calculations of thermal conductivity, where there is only one thermostat in one piece of unit cell as well as another piece where artificial friction forces act on atoms. With the help of this scheme, calculations of 1D heterogeneous systems having regions with atoms of different atomic masses are presented. It is shown that the difference in atomic masses in adjacent regions of the systems leads to a significant temperature jump at interfaces between these regions. This temperature jump exists independently of the mass ratio on both sides of the interface.The reasons for these jumps are discussed. It is also shown that, by changing the alternation of regions with different masses of atoms, it is possible to reduce the total thermal conductivity of the system by several times. On the base of these results, we can hope that for three-dimensional structures also, the thermal conductivity can be significantly reduced.Представлены молекулярно-динамические расчеты (МД) гетерогенных одномерных периодических систем. Предлагается новая методика прямых расчетов теплопроводности, при которой в одном элементе элементарной ячейки находится только один термостат, а в другом элементе действуют силы искусственного трения на атомы. С помощью этой схемы представлены расчеты одномерных гетерогенных систем, имеющих области с атомами разной атомной массы. Показано, что различие атомных масс в соседних областях систем приводит к значительному скачку температуры на границах раздела между этими областями. Этот скачок температуры существует независимо от отношения масс по обе стороны от границы раздела. Обсуждаются причины этих скачков. Также показано, что, изменяя чередование областей с разной массой атомов, можно в несколько раз уменьшить общую теплопроводность системы. На основании этих результатов можно надеяться, что и для трехмерных структур теплопроводность может быть значительно снижена.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Volkov N. V., Lukyanenko A. V., Yakovlev I. A., Varnakov S. N., Tarasov A. S.
Заглавие : The role of SiO2/Si interface in magnetic field driven lateral photovoltaic effect in Mn/SiO2/n-Si and Fe/SiO2/p-Si MIS structures
Коллективы : Samarkand International Symposium on Magnetism, Samarkand State University
Место публикации : Book of abstacts of Samarkand International Symposium on Magnetism (SISM-2023)/ int. adv. com. S. G. Ovchinnikov [et al.]. - 2023. - Ст.3OT-A-8. - P.145. - ISBN 978-5-00202-320-2
Примечания : Cited References: 1
Материалы конференции,
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Volkov N. V., Lukyanenko A. V., Yakovlev I. A., Varnakov S. N., Tarasov A. S.
Заглавие : Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field
Колич.характеристики :6 с
Место публикации : Mater. Sci. Semicond. Process. - 2023. - Vol. 167. - Ст.107786. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2023.107786. - ISSN 18734081 (eISSN)
Примечания : Cited References: 32
Аннотация: Charge transport in semiconductor devices is highly sensitive to light, which opens up wide application prospects. The lateral photovoltaic effect (LPE) is widely used in position sensitive detectors due to its high sensitivity to the light spot position. We report on the features of the LPE in silicon-based metal/insulator/semiconductor structures at helium temperatures. To investigate the LPE, Fe/SiO2/p-Si and Mn/SiO2/n-Si structures have been fabricated by molecular beam epitaxy. It has been found by studying the lateral photovoltage that the SiO2/Si interface plays a significant role in transport of photogenerated carriers, mainly via the interface states, which induce electron capture/emission processes at certain temperatures. The value of the photovoltage is likely affected not only by the metallic film thickness, but also by the substrate conductivity type and Schottky barrier. The effect of the magnetic field on the LPE is driven by two mechanisms. The first one is the well-known action of the Lorentz force on photogenerated carriers and the second one is shifting of the interface state energy levels. Basically, the magnetic field suppresses the contribution of the interface states to the LPE, which suggests that the interface-induced transport can be controlled magnetically.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samardak, Alexander S., Ognev, Alexey, V, Kolesnikov, Alexander G., Stebliy, Maksim E., Samardak, Vadim Yu, Iliushin, Ilia G., Pervishko, Anastasiia A., Yudin, Dmitry, Platunov M. S., Ono, Teruo, Wilhelm, Fabrice, Rogalev, Andrey
Заглавие : XMCD and ab initio study of interface-engineered ultrathin Ru/Co/W/Ru films with perpendicular magnetic anisotropy and strong Dzyaloshinskii-Moriya interaction
Коллективы : Russian Ministry of Science and Higher Education [075-15-2021-607, 0657-2020-0013]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-32-60020]; Russian Federation President Scholarship for Young Scientists [SP-1640.2021.5]; Russian Science FoundationRussian Science Foundation (RSF) [21-42-00041]; Russian Ministry of Science and Higher Education
Место публикации : Phys. Chem. Chem. Phys. - 2022. - Vol. 24, Is. 14. - P.8225-8232. - ISSN 1463-9076, DOI 10.1039/d1cp05456b. - ISSN 1463-9084(eISSN)
Примечания : Cited References: 47. - A. V. O., I. G. I. and T. O. thank the Russian Ministry of Science and Higher Education for state support of scientific research conducted under the supervision of leading scientists in Russian institutions of higher education, scientific foundations and state research centers (Project No. 075-15-2021-607) in parts of sample preparation and its magnetic characterization. The micromagnetic simulations performed by M. E. S. were supported by the Russian Ministry of Science and Higher Education under the state task (0657-2020-0013). A. A. P. (ab initio calculations) acknowledges the support from the Russian Foundation for Basic Research (Project No. 19-32-60020) and the Russian Federation President Scholarship for Young Scientists (SP-1640.2021.5). The work of A. S. S. related to the experimental and analytical study of DMI and skyrmion bubbles was supported by the Russian Science Foundation (Project No. 21-42-00041). The authors acknowledge the use of computational resources of the Skoltech supercomputer Zhores47 to obtain the theoretical results presented in this paper. The authors thank ID12 beamline staff for their help during the XMCD experiment and gratefully acknowledge the provision of beamtime (Proposal MA-3661) by the ESRF. The research contribution of M. P. (XMCD anaysis) was partially funded by the Russian Ministry of Science and Higher Education via the budget project of SRF SKIF, Boreskov Institute of Catalysis
Предметные рубрики: TOTAL-ENERGY CALCULATIONS
CIRCULAR-DICHROISM
MOLECULAR-DYNAMICS
Аннотация: Understanding the nature of recently discovered spin–orbital induced phenomena and a definition of a general approach for “ferromagnet/heavy-metal” layered systems to enhance and manipulate spin–orbit coupling, spin–orbit torque, and the Dzyaloshinskii–Moriya interaction (DMI) assisted by atomic-scale interface engineering are essential for developing spintronics and spin-orbitronics. Here, we exploit X-ray magnetic circular dichroism (XMCD) spectroscopy at the L2,3-edges of 5d and 4d non-magnetic heavy metals (W and Ru, respectively) in ultrathin Ru/Co/W/Ru films to determine their induced magnetic moments due to the proximity to the ferromagnetic layer of Co. The deduced orbital and spin magnetic moments agree well with the theoretically predicted values, highlighting the drastic effect of constituting layers on the system's magnetic properties and the strong interfacial DMI in Ru/Co/W/Ru films. As a result, we demonstrate the ability to simultaneously control the strength of magnetic anisotropy and intermixing-enhanced DMI through the interface engineered inversion asymmetry in thin-film chiral ferromagnets, which are a potential host for stable magnetic skyrmions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Koblischka, Michael R., Koblischka-Veneva, Anjela, Gokhfeld D. M., Naik, S. Pavan Kumar, Nouailhetas, Quentin, Berger, Kevin, Douine, Bruno
Заглавие : Flux pinning docking interfaces in satellites using superconducting foams as trapped field magnets
Коллективы : ANRFrench National Research Agency (ANR); DFGGerman Research Foundation (DFG)European Commission [ANR-17-CE05-0030, DFG-ANR Ko2323-10]
Место публикации : IEEE Trans. Appl. Supercond. - 2022. - Vol. 32, Is. 4. - Ст.4900105. - ISSN 1051-8223, DOI 10.1109/TASC.2022.3147734. - ISSN 1558-2515(eISSN)
Примечания : Cited References: 44. - This work was supported in part by SUPERFOAM international project funded by ANR and DFG under Grants ANR-17-CE05-0030 and DFG-ANR Ko2323-10.
Предметные рубрики: BULK
RECONFIGURATION
MAGNETIZATION
Аннотация: Flux-Pinning Docking Interfaces (FPDI) in satellite systems were developed using bulk superconductors and permanent magnets in previous works. However, such FPDIs have limited magnetic field strength, consist of heavy-weight material, and can only be used with a single purpose, i.e., as chasing or docking satellite. Replacing the magnetic material in the FPDI by a trapped field (TF)-magnet would enable the interface to operate for both purposes, i.e., generating a (stronger) magnetic field and trapping it. We show the requirements for such a system and discuss the possible gains when using a TF-FPDI in satellites. To reduce the system weight, the use of superconducting foams as superconducting material is discussed in detail. Furthermore, the use of superconducting foams, the size of which can be easily upscaled, may also comprise the function of the damping material, so even more weight could be saved for the payload.
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Вид документа : Однотомное издание
Шифр издания :
Заглавие : Soft photonic crystals and metamaterials
Выходные данные : Bazel; Beijing; Wuhan: MDPI, 2022
Колич.характеристики :VII с ; 127 с
ISBN, Цена 978-3-0365-6074-8
ISBN, Цена 978-3-0365-6073-1
Идентификационный №: DOI 10.3390/ma15228096
Содержание : Special issue: Soft photonic crystals and metamaterials/ I. V. Timofeev, W. Lee. Double-resolved beam steering by metagrating-based Tamm plasmon polariton/ R. G. Bikbaev, D. N. Maksimov, K. - P. Chen, I. V. Timofeev. Chiral optical Tamm states at the interface between a Dye-doped cholesteric liquid crystal and an anisotropic mirror/ A. Yu. Avdeeva, S. Ya. Vetrov, R. G. Bikbaev [et al.]. Chiral-selective Tamm plasmon polaritons/ M. -Y. Lin, W. -H. Xu, R. G. Bikbaev [et al.].
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sofronova S. N., Eremin E. V., Moshkina E. M., Selyanina A. V., Bondarenko G. N., Shabanov A. V.
Заглавие : Synthesis, structural and magnetic properties of ludwigite Mn1.32Ni0.85Cu0.83BO5
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 11. - P.1743-1749. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2022.11.54200.425. - ISSN 10906460 (eISSN)
Примечания : Cited References: 19. - The study was done with financial support from the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory and the Krasnoyarsk Regional Fund of Science within scientific project No. 20-42-240011. The research was carried out using the equipment provided by the Krasnoyarsk Regional Center for Collective Use
Аннотация: Single crystals of Mn1.32Ni0.85Cu0.83BO5 with the ludwigite structure were obtained by the solution-melt method during spontaneous crystallization. The concentration of copper, manganese and nickel ions was determined by transmission microscopy. Manganese ions are included in compounds in the divalent and trivalent states. The study of temperature and field dependences showed that we have several magnetic transitions. The first transition, associated with the ferrimagnetic ordering of the magnetic moments of parts of the ions, observed in the region of 50 K. In the region of 25 K, a second magnetic transition is observed. Substitution of nickel ions for copper and divalent manganese of better disorder and competition of exchange interactions, which leads to the division of the magnetic system into several magnetic subsystems that are ordered at different temperatures.
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