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A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces / B. A. Belyaev, V. V. Tyurnev, A. S. Voloshin [et al.] // Dokl. Phys. - 2020. - Vol. 65, Is. 9. - P. 343-348, DOI 10.1134/S1028335820090013. - Cited References: 12. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FEFE-2020-0013 “Development of the Theory of Self-Configurable Machine-Learning Algorithms for Simulating and Predicting Characteristics of Complex Systems” . - ISSN 1028-3358
Кл.слова (ненормированные):
frequency response -- return loss -- passband filter -- insertion loss
Аннотация: The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor gratings in the form of square grids and inner ones in the form of square patches. The grids serve as mirrors with specified reflective properties, which ensure optimal couplings of the outer resonators with free space and optimal coupling between the resonators. The patch gratings make it possible to tune the resonator eigenfrequency during the filter synthesis. The efficiency of the quasi-static calculation of the frequency response for the layered structure is shown for the case of a lattice period smaller than the wavelength in the dielectric and much smaller than the layer thickness. Since the calculation does not require much computing power, the parametric synthesis of the device can be performed on a conventional personal computer. The measured characteristics of the prototype of the synthesized third-order filter with a fractional passband width of ∼10% and a central passband frequency of ∼10.6 GHz are in good agreement with the calculation. The proposed design allows one to fabricate multilayer panels radio transparent in a certain frequency band for hiding microwave antennas.

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Публикация на русском языке Полосно-пропускающий фильтр из диэлектрических слоев с субволновыми решетками полосковых проводников на границах [Текст] / Б. А. Беляев, В. В. Тюрнев, А. С. Волошин [и др.] // Доклады Академии наук. Физика, технические науки. - 2020. - Т. 494 № 1. - С. 75-81

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Tyurnev, V. V.; Тюрнев, Владимир Вениаминович; Voloshin, A. S.; Волошин, Александр Сергеевич; Leksikov, An. A.; Лексиков, Андрей Александрович; Galeev, R. G.; Shabanov, V. F.; Шабанов, Василий Филиппович
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
}
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Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure -- Mis transition -- Photoelectric effect -- Schottky barrier -- Channel switching -- Comparative analysis -- Electron hole pairs -- Fe films -- Fe layer -- Ferromagnetic films -- Hybrid structure -- Optical effects -- Optical radiations -- Photogeneration -- Planar geometries -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Critical currents -- Interfaces (materials) -- Magnetic materials -- Photoelectricity -- Schottky barrier diodes -- Silicon -- Switching circuits -- Transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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CEMS analysis of phase formation in nanostructured films (Fe/Si) 3 / S. N. Varnakov [et al.] // Solid State Phenomena. - 2011. - Vol. 168-169. - P. 277-280, DOI 10.4028/www.scientific.net/SSP.168-169.277 . - ISSN 1662-9779
Кл.слова (ненормированные):
interfaces metal/semiconductor -- magnetic silicides -- molecular beam epitaxy technology -- semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).

РИНЦ
Держатели документа:
Instituto de Ciencia de Materiales de Aragon,Departamento de Ciencia de Materiales e Ingenieria Metalurgica,CSIC-Universidad de Zaragoza
Instituto de Ciencia de Materiales de Aragon,Departamento de Fisica de la Materia Condensada,CSIC-Universidad de Zaragoza
Kirensky Institute of Physics,Siberian Division,Russian Academy of Sciences
Siberian Aerospace University

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Rubin, J.; Badia, L.; Bondarenko, G. V.; Бондаренко, Геннадий Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)
}
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Composite materials on high-T-c superconductors and BaPbO3, Ag basis / A. G. Mamalis [et al.] // Physica C. - 2001. - Vol. 364. - P. 174-177, DOI 10.1016/S0921-4534(01)00749-3. - Cited References: 9 . - ISSN 0921-4534

РУБ Physics, Applied

Кл.слова (ненормированные):
composite high-T-c superconductors -- superconducting fault current limiter -- Composite high-Tc superconductors -- Superconducting fault current limiter -- Composite materials -- Electric fault currents -- Interfaces (materials) -- Magnetic variables measurement -- Mathematical models -- Scanning electron microscopy -- Spectrometry -- Superconducting transition temperature -- Superconductivity -- X ray diffraction analysis -- Solid state reactions -- High temperature superconductors
Аннотация: The preparation., processing and characterization of the composite materials on high-T-c superconductor (HTSC) basis, YBa2Cu3O7/Ag and Y0.75Lu0.25Ba2Cu3O7/BaPbO3, is reported. The initial components YBa2Cu3O7 and BaPbO3 were prepared by the standard solid state reaction technique. The microstructures of the samples were observed by scanning electron microscopy. whilst the XRD paterns of the composites HTSC+Ag and HTSC+BaPbO3 revealed the 123 superconducting phase and the Ag or BaPbO3 structure. The chemical compositions of the powders and the interface zone were found by employing energy dispersive spectrometry. The resistive and magnetic measurements of the composites indicated the transition temperature 93.5 K. Application of such composite materials in the construction of a superconducting fault current limiter model is reported. (C) 2001 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Natl Tech Univ Athens, Dept Mech Engn, Mfg Technol Div, Athens 10682, Greece
Russian Acad Sci, Kiensky Inst Phys, Krasnoyarsk, Russia
ИФ СО РАН
Manufacturing Technology Division, Department of Mechanical Engineering, National Technical University of Athens, 42, 28th October Ave., 10682 Athens, Greece
Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Mamalis, A. G.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaihutdinov, K. A.; Gohfeld, D. M.; Kharlamova, S. A.; Vottea, I. N.; International Conference on New Theories, Discoveries and Applications of Superconductors and Related Materials(3 ; 2001 ; Jan. 15-19 ; Honolulu, Hawaii)
}
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Composition and morphology of Fe-Si interfaces and (Fe/Si)3 multilayer nanostructures / J. Bartolomé [и др.] // 20th Int. Conf. on Magnetism (ICM-2015) : book of abstracts. - 2015. - Ст. WE.J.2_I1

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Доп.точки доступа:
Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Bartolomé, F.; Magén, C.; Bürgler, D. E.; Rubio-Zuazo, J.; Castro, G. R. ; Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Platunov, M. S.; Платунов, Михаил Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)
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Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra / M. Smirnov, E. Roginskii, A. Savin [et al.] // Photonics. - 2023. - Vol. 10, Is. 8. - Ст. 902, DOI 10.3390/photonics10080902. - Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. - The study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute . - ISSN 2304-6732
Кл.слова (ненормированные):
silicon -- cristobalite -- interface -- superlattice -- Raman spectra -- DFT modelling
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.

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Держатели документа:
Faculty of Physics, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia
Laboratory of Spectroscopy of Solid State, Ioffe Institute, Politehnicheskaya St. 26, Saint-Petersburg 194021, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok St. 50/38, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Svobodny pr. 82, Krasnoyarsk 660041, Russia
Center for Optical and Laser Materials Research, Research Park, Saint-Petersburg State University, Universitetskaya nab. 7/9, Saint-Petersburg 199034, Russia

Доп.точки доступа:
Smirnov, Mikhail; Roginskii, Evgenii; Savin, Aleksandr; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Pankin, Dmitrii
}
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Effect of interfaces in the multilayer structures on the electronic states / S. G. Ovchinnikov, O. A. Maximova, S. A. Lyashchenko [et al.] // International workshop on the properties of functional MAX-materials (2nd FunMax) : book of abstracts / org. com. M. Farle [et al.]. - 2021. - P. 15

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Доп.точки доступа:
Farle, M. \org. com.\; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S. \org. com.\; Тарасов, Антон Сергеевич; Smolyarova, T. E. \org. com.\; Смолярова, Татьяна Евгеньевна; Ovchinnikov, S. G.; Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; International workshop on functional MAX-materials(2 ; 2021 ; Sept. 14-17 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics; Siberian Federal Univercity
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Enhancement of thermoelectric performance in Bi0.5Sb1.5Te3 particulate composites including ferroelectric BaTiO3 nanodots / Y. Cheng, J. Yang, Y. Luo [et al.] // ACS Appl. Mater. Interfaces. - 2022. - Vol. 14, Is. 32. - P. 37204-37212, DOI 10.1021/acsami.2c10424. - Cited References: 40. - This work was supported by the National Natural Science Foundation of China (51772019, 51572098, and 51632006) and the NSFC-Royal Society joint project (51811530307 and IEC\NSFC\170290) . - ISSN 1944-8244
Кл.слова (ненормированные):
thermoelectric -- ferroelectric -- BaTiO3 -- Bi0.5Sb1.5Te3 -- coupling
Аннотация: An increasing number of studies have reported producing composite structures by combining thermoelectric and functional materials. However, combining energy filtering and ferroelectric polarization to enhance the dimensionless figure of merit thermoelectric ZT remains elusive. Here we report a composite that contains nanostructured BaTiO3 embedded in a Bi0.5Sb1.5Te3 matrix. We show that ferroelectric BaTiO3 particles are evenly composited with Bi0.5Sb1.5Te3 grains reducing the concentration of free charge carriers with increasing BaTiO3 content. Additionally, as a result of the energy-filtering effect and ferroelectric polarization, the Seebeck coefficient was improved by ∼10% with a ∼10% improvement in power factors. The BaTiO3 phase can effectively scatters phonons reducing lattice thermal conductivity κl (0.5 W m–1 K–1) and increasing ZT to 1.31 at 363 K in Bi0.5Sb1.5Te3 composites with 2 vol % BaTiO3 content giving an improvement of ∼25% over pure Bi0.5Sb1.5Te3. Our work indicates that the introduction of ferroelectric nanoparticles is an effective method for optimizing the ZT of Bi0.5Sb1.5Te3-based thermoelectric materials.

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Держатели документа:
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Hubei Province, Wuhan, 430074, China
Kirensky Institute of Physics, Federal Research Center Ksc Sb Ras, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660036, Russian Federation
School of Engineering, London South Bank University, 103 Borough Road, London, SE1 0AA, United Kingdom
School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, United Kingdom

Доп.точки доступа:
Cheng, Y.; Yang, J.; Luo, Y.; Li, W.; Vtyurin, A. N.; Втюрин, Александр Николаевич; Jiang, Q.; Dunn, S.; Yan, H.
}
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10.

Flux pinning docking interfaces in satellites using superconducting foams as trapped field magnets / M. R. Koblischka, A. Koblischka-Veneva, D. Gokhfeld [et al.] // IEEE Trans. Appl. Supercond. - 2022. - Vol. 32, Is. 4. - Ст. 4900105, DOI 10.1109/TASC.2022.3147734. - Cited References: 44. - This work was supported in part by SUPERFOAM international project funded by ANR and DFG under Grants ANR-17-CE05-0030 and DFG-ANR Ko2323-10. . - ISSN 1051-8223. - ISSN 1558-2515

РУБ Engineering, Electrical & Electronic + Physics, Applied
Рубрики:
BULK
RECONFIGURATION
MAGNETIZATION
Кл.слова (ненормированные):
Superconducting magnets -- Satellites -- Yttrium barium copper oxide -- Magnetomechanical effects -- Magnetic fields -- Superconducting coils -- Magnetometers -- Flux-pinning docking interface -- Foams -- Trapped field magnets -- YBCO
Аннотация: Flux-Pinning Docking Interfaces (FPDI) in satellite systems were developed using bulk superconductors and permanent magnets in previous works. However, such FPDIs have limited magnetic field strength, consist of heavy-weight material, and can only be used with a single purpose, i.e., as chasing or docking satellite. Replacing the magnetic material in the FPDI by a trapped field (TF)-magnet would enable the interface to operate for both purposes, i.e., generating a (stronger) magnetic field and trapping it. We show the requirements for such a system and discuss the possible gains when using a TF-FPDI in satellites. To reduce the system weight, the use of superconducting foams as superconducting material is discussed in detail. Furthermore, the use of superconducting foams, the size of which can be easily upscaled, may also comprise the function of the damping material, so even more weight could be saved for the payload.

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Держатели документа:
Saarland Univ, Dept Expt Phys, D-66041 Saarbrucken, Germany.
Shibaura Inst Technol, Tokyo 1358548, Japan.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan.
Univ Lorraine, GREEN, F-54000 Nancy, France.

Доп.точки доступа:
Koblischka, Michael R.; Koblischka-Veneva, Anjela; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Naik, S. Pavan Kumar; Nouailhetas, Quentin; Berger, Kevin; Douine, Bruno; ANRFrench National Research Agency (ANR); DFGGerman Research Foundation (DFG)European Commission [ANR-17-CE05-0030, DFG-ANR Ko2323-10]
}
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