Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Tyurnev V. V., Voloshin A. S., Leksikov An. A., Galeev R. G., Shabanov V. F.
Заглавие : A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces
Место публикации : Dokl. Phys. - 2020. - Vol. 65, Is. 9. - P.343-348. - ISSN 10283358 (ISSN), DOI 10.1134/S1028335820090013
Примечания : Cited References: 12. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FEFE-2020-0013 “Development of the Theory of Self-Configurable Machine-Learning Algorithms for Simulating and Predicting Characteristics of Complex Systems”
Аннотация: The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor gratings in the form of square grids and inner ones in the form of square patches. The grids serve as mirrors with specified reflective properties, which ensure optimal couplings of the outer resonators with free space and optimal coupling between the resonators. The patch gratings make it possible to tune the resonator eigenfrequency during the filter synthesis. The efficiency of the quasi-static calculation of the frequency response for the layered structure is shown for the case of a lattice period smaller than the wavelength in the dielectric and much smaller than the layer thickness. Since the calculation does not require much computing power, the parametric synthesis of the device can be performed on a conventional personal computer. The measured characteristics of the prototype of the synthesized third-order filter with a fractional passband width of ∼10% and a central passband frequency of ∼10.6 GHz are in good agreement with the calculation. The proposed design allows one to fabricate multilayer panels radio transparent in a certain frequency band for hiding microwave antennas.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Avramov P. V.
Заглавие : The role of interfaces in determination of electronic properties of complex silicon nanoclusters
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering": book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.11
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev A. D., Freydman A. L.
Заглавие : Implementation of the Astrov method for measuring the ME E effect with the use of a vibrating-coil magnetometer
Место публикации : J. Surf. Invest.: Pleiades Publishing, 2014. - Vol. 8, Is. 1. - P.17-19. - ISSN 1027-4510, DOI 10.1134/S1027451014010078. - ISSN 1819-7094
Примечания : Cited References: 12
Предметные рубрики: Surfaces and Interfaces, Thin Films
Ключевые слова (''Своб.индексиров.''): ac voltage--external fields--magnetization hysteresis--repolarization--temperature dependence
Аннотация: A setup is developed for measuring the ME E effect by fixing the amplitude of magnetization oscillations upon the repolarization of a sample, caused by the application of ac voltage to the sample plates. The temperature dependence of the ME E effect in a Ga2 - xFexO3 single-crystal sample is measured in external fields from 0.25 to 1 kOe at temperatures from 77.4 to 280 K. It is established that the effect disappears when the Curie temperature is attained. The hysteresis of the magnetoelectric effect related to the magnetization hysteresis is measured. © 2014 Pleiades Publishing, Ltd.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Ovchinnikov S. G., Bartolomé J., Rubin J., Badia L., Bondarenko G. V.
Заглавие : CEMS analysis of phase formation in nanostructured films (Fe/Si) 3
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Solid State Phenomena. - 2011. - Vol. 168-169. - P.277-280. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.168-169.277
Ключевые слова (''Своб.индексиров.''): interfaces metal/semiconductor--magnetic silicides--molecular beam epitaxy technology--semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).
РИНЦ
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mamalis A. G., Ovchinnikov S. G., Petrov M. I., Balaev D. A., Shaihutdinov K. A., Gohfeld D. M., Kharlamova S. A., Vottea I. N.
Заглавие : Composite materials on high-T-c superconductors and BaPbO3, Ag basis
Коллективы : International Conference on New Theories, Discoveries and Applications of Superconductors and Related Materials
Разночтения заглавия :авие SCOPUS: Composite materials on high-Tc superconductors and BaPbO3, Ag basis
Место публикации : Physica C. - 2001. - Vol. 364. - P.174-177. - ISSN 0921-4534, DOI 10.1016/S0921-4534(01)00749-3
Примечания : Cited References: 9
Ключевые слова (''Своб.индексиров.''): composite high-t-c superconductors--superconducting fault current limiter--composite high-tc superconductors--superconducting fault current limiter--composite materials--electric fault currents--interfaces (materials)--magnetic variables measurement--mathematical models--scanning electron microscopy--spectrometry--superconducting transition temperature--superconductivity--x ray diffraction analysis--solid state reactions--high temperature superconductors
Аннотация: The preparation., processing and characterization of the composite materials on high-T-c superconductor (HTSC) basis, YBa2Cu3O7/Ag and Y0.75Lu0.25Ba2Cu3O7/BaPbO3, is reported. The initial components YBa2Cu3O7 and BaPbO3 were prepared by the standard solid state reaction technique. The microstructures of the samples were observed by scanning electron microscopy. whilst the XRD paterns of the composites HTSC+Ag and HTSC+BaPbO3 revealed the 123 superconducting phase and the Ag or BaPbO3 structure. The chemical compositions of the powders and the interface zone were found by employing energy dispersive spectrometry. The resistive and magnetic measurements of the composites indicated the transition temperature 93.5 K. Application of such composite materials in the construction of a superconducting fault current limiter model is reported. (C) 2001 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bartolomé J., Badía-Romano L., Rubín J. , Bartolomé F., Magén C., Bürgler D. E., Rubio-Zuazo J., Castro G. R. , Varnakov S. N., Yakovlev I. A., Tarasov I. A., Platunov M. S., Ovchinnikov S. G.
Заглавие : Composition and morphology of Fe-Si interfaces and (Fe/Si)3 multilayer nanostructures
Коллективы : International Conference on Magnetism
Место публикации : 20th Int. Conf. on Magnetism (ICM-2015): book of abstracts. - 2015. - Ст.WE.J.2_I1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Maximova O. A., Lyashchenko S. A., Yakovlev I. A., Varnakov S. N.
Заглавие : Effect of interfaces in the multilayer structures on the electronic states
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics, Siberian Federal Univercity
Место публикации : International workshop on the properties of functional MAX-materials (2nd FunMax): book of abstracts/ org. com. M. Farle [et al.]. - 2021. - P.15
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