Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Perina J.
Заглавие : Light squeezing at the transition to quantum chaos
Место публикации : Phys. Rev. E: AMERICAN PHYSICAL SOC, 1998. - Vol. 57, Is. 4. - P4023-4034. - ISSN 1063-651X, DOI 10.1103/PhysRevE.57.4023
Примечания : Cited References: 62
Предметные рубрики: HIGHLY-EXCITED ATOMS
ELECTROMAGNETIC-FIELD
ANHARMONIC-OSCILLATOR
MICROWAVE IONIZATION
MONOCHROMATIC-FIELD
CLASSICAL MECHANICS
PERIODIC-ORBITS
RYDBERG ATOMS
HYDROGEN-ATOM
SYSTEMS
Аннотация: We investigate theoretically the dynamics of squeezed state generation in nonlinear systems possessing a transition from regular to chaotic dynamics in the limit of a large number of photons. As an example, the model of a kicked Kerr oscillator is considered. We show that at the transition to quantum chaos the maximum possible degree of squeezing increases exponentially in time, in contrast to the regular dynamics, where the degree of squeezing increases only powerwise in time. We demonstrate the one-to-one correspondence of the degree of squeezing and the value of the local Lyapunov instability rate in the corresponding classical chaotic system.
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Вид документа : Статья из журнала
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Автор(ы) : Krakhalev M. N., Prishchepa O. O., Zyryanov V. Ya.
Заглавие : Inverse mode of ion-surfactant method of director reorientation inside nematic droplets
Место публикации : Mol. Cryst. Liquid Cryst. - 2009. - Vol. 512, Is. 1. - P.1998-2003. - ISSN 1542-1406, DOI 10.1080/15421400903050814
Примечания : Cited Reference Count: 8. - Гранты: This work was partially supported by the grants Nos. NSh-3818.2008.3; 02.740.11.0220, and No. 08-03-01007 of RFBR, and Nos. 27.1; 110; 144 of SB RAS. M. Krakhalev acknowledges the financial support from K. I. Zamaraev MBN Foundation. O. Prishchepa acknowledges the financial support from Russian Science Support Foundation.Финансирующая организация: RFBR [NSh-3818.2008.3, 02.740.11.0220, 08-03-01007]; SB RAS [27.1; 110; 144]; Zamaraev MBN Foundation; Russian Science Support Foundation
Ключевые слова (''Своб.индексиров.''): electrically commanded surfaces--ion surfactant--nematic--polymer dispersed liquid crystals--surface anchoring--electrically commanded surfaces--ion surfactant--nematic--polymer dispersed liquid crystals--surface anchoring--applied voltages--crossed polarizers--director fields--director reorientation--droplet structure--electrically commanded surfaces--high concentration--homeotropic--initial state--ionic modification--liquid-crystal droplets--nematic droplets--nematic polymer--surface-active cations--surface-anchoring--trimethyl--ammonium compounds--cationic surfactants--crystals--drop formation--dyes--ionization of liquids--ions--liquid crystal displays--liquid crystals--liquids--nematic liquid crystals
Аннотация: Inverse mode of a novel electrooptical effect caused by the ionic modification of boundary conditions has been studied for liquid crystal droplets. We have considered the droplets of nematic 5CB doped with cationic surfactant cetyl-trimethyl-ammonium-bromide and dispersed in polyvinyl alcohol. In the initial state the surface anchoring was normal on the whole interface due to the high concentration of homeotropic surfactant. Applied voltage results in the purification of a section of the interface from the surface-active cations thereby restoring here a tangential anchoring and stimulating the significant transformation of droplet structure. At that three different types of director field distribution can be realized within the same droplet. The proper textures of the droplet both in the crossed polarizers and without analyzer are considered.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Varnakov S. N., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure
Место публикации : AIP Adv.: American Institute of Physics, 2017. - Vol. 7, Is. 1. - Ст.015206. - ISSN 21583226 (ISSN), DOI 10.1063/1.4974876
Примечания : Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Ключевые слова (''Своб.индексиров.''): electric fields--impact ionization--ionization--magnetic fields--magnetism--manganese--schottky barrier diodes--effect of magnetic field--high magnetic fields--low temperatures--magnetic and electric fields--magnetotransport effects--magnetotransport phenomena--schottky barriers--switching devices--magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Savchenko V., Gel'mukhanov F., Laarmann T., Polyutov S. P., Kimberg V.
Заглавие : Dynamical phase shift in x-ray absorption and ionization spectra by two delayed x-ray laser fields
Место публикации : Phys. Rev. A. - 2021. - Vol. 104, Is. 1. - Ст.013114. - ISSN 24699926 (ISSN), DOI 10.1103/PhysRevA.104.013114
Примечания : Cited References: 22. - The reported study was funded by Russian Foundation for Basic Research (RFBR), Project No. 19-29-12015. F.G. acknowledges also the support from the Helmholtz Virtual Institute VI419 Dynamic Pathways in Multidimensional Landscapes. T.L. acknowledges support by the Deutsche Forschungsgemeinschaft through the Cluster of Excellence “Advanced Imaging of Matter” (EXC 2056 - Project No. 390715994). V.K. acknowledges support from the Vetenskapsrådet (Grant No. 2019-03470)
Аннотация: We study theoretically x-ray absorption and ionization spectra of an atom or molecule by two coherent x-ray pulses that show a relative phase shift resulting in a time delay of the pulse envelopes. We demonstrate that the phase modulation of the spectra is shifted with respect to the phase oscillation comb of the x-ray double pulse. The reason for this shift is the dynamics of the process defined by the interplay of the delay time, the pulse width, the detuning, and the lifetime of the core-excited state.
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