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The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films / I. Edelman [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 443. - P. 107-115, DOI 10.1016/j.jmmm.2017.07.022. - Cited References: 35. - The work was supported partly by the Grant of the President of the Russian Federation no. NSh-7559.2016.2. M.E. and D.C.J. acknowledge support from the National Science Foundation under grant DMR-1266217. . - ISSN 0304-8853
Кл.слова (ненормированные):
Copper selenide -- CuCr2Se4 films -- Magnetic anisotropy -- Trasnverse kerr effect -- Magnetic resonance -- Magnetoresistance
Аннотация: Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC RAS, Krasnoyarsk, Russian Federation
Department of Chemistry, University of Oregon, Eugene, OR, United States
Siberian Federal University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology FRC “KSC SB RAS”, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Edelman, I. S.; Эдельман, Ирина Самсоновна; Esters, M.; Johnson, D. C.; Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautsky, M. V.; Рауцкий, Михаил Владимирович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Ivantsov, R. D.; Иванцов, Руслан Дмитриевич; Petrov, D. A.; Петров, Дмитрий Анатольевич; Solovyov, L. A.
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Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface / P. Avramov [et al.] // J. Phys. Chem. A. - 2017. - Vol. 121, Is. 3. - P. 680-689, DOI 10.1021/acs.jpca.6b09696. - Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team. . - ISSN 1089-5639

РУБ Chemistry, Physical + Physics, Atomic, Molecular & Chemical
Рубрики:
HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.

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Держатели документа:
Kyungpook Natl Univ, Dept Chem, 80 Daehak Ro, Daegu 41566, South Korea.
Kyungpook Natl Univ, Green Nano Mat Res Ctr, 80 Daehak Ro, Daegu 41566, South Korea.
Siberian Fed Univ, 79 Svobodniy Pr, Krasnoyarsk 660041, Russia.
LV Kirensky Inst Phys SB RAS, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia.
Natl Inst Quantum & Radiol Sci & Technol QST, Naka, Ibaraki 3191106, Japan.
Natl Univ Sci & Technol MISiS, Moscow 119049, Russia.

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Kuklin, A. V.; Куклин, Артем Валентинович; Lee, H.; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Sakai, S.; Entani, S.; Naramoto, H.; Sorokin, P. B.; Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
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Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 140-143, DOI 10.1016/j.jmmm.2016.12.092. - Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPINTRONICS
   BREAKDOWN
   SILICON
   SPIN
Кл.слова (ненормированные):
Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Balaev, D. A.
Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations / D. A. Balaev, S. V. Semenov, M. A. Pochekutov // J. Appl. Phys. - 2017. - Vol. 122, Is. 12. - Ст. 123902, DOI 10.1063/1.4986253. - Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018. . - ISSN 0021-8979
Кл.слова (ненормированные):
Anisotropy -- High temperature superconductors -- Hysteresis -- Magnetic fields -- Magnetic flux -- Magnetism -- Magnetoresistance -- Different-magnetic fields -- External magnetic field -- Granular superconductors -- Macroscopic transport -- Magnetic flux compression -- Magneto transport properties -- Model representation -- Transport currents -- Superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Semenov, S. V.; Семёнов, Сергей Васильевич; Pochekutov, M. A.; Балаев, Дмитрий Александрович
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The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces / A. V. Kuklin [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 23-29, DOI 10.1016/j.jmmm.2016.12.096. - Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
HEXAGONAL BORON-NITRIDE
   THIN-FILMS
   GIANT MAGNETORESISTANCE
   METALLIC
Кл.слова (ненормированные):
Graphene nanoribbons -- DFT -- LSMO thin films -- Induced spin polarization -- h-BN nanoribbons -- Half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.

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Доп.точки доступа:
Kuklin, A. V.; Kuzubov, A. A.; Кузубов, Александр Александрович; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Lee, Hyosun; Sorokin, Pavel B.; Sakai, Seiji; Entani, Shiro; Naramoto, Hiroshi; Avramov, P. V.; Аврамов, Павел Вениаминович; Russian Science Foundation [14-13-00139]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7 / S. I. Popkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O4.2. - P. 222. - References: 4 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
bilayer manganites -- positive magnetoresistance -- spin-dependent tunneling

Доп.точки доступа:
Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Nikitin, S. E.; Никитин, Станислав Евгеньевич; Petrov, M. I.; Петров, Михаил Иванович; Terent'yev, K. Yu.; Терентьев, Константин Юрьевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures / N. V. Volkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.4. - P. 214. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures -- magnetoresistance -- magnetoimpedance

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Magnetoresistance TmxMn1–xS in paramagnetic state / S. S. Aplesnin [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O4.5. - P. 226. - References: 4 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
magnetoresistance -- Hall resistance -- conductivity

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kretinin, V. V.; Кретинин В. В.; Sitnikov, M. N.; Ситников Максим Николаевич; Romanova, O. B.; Романова, Оксана Борисовна; Korolev, V. K.; Pichugin, A. Y.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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10.

Magnetic field-sensitive lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure / I. A. Bondarev [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P4.11. - P. 239. - References: 1. - This work was supported by the Russian Foundation of Basic Research, project nos. 14-02-00234 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structure -- magnetoresistance -- lateral photovoltage

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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