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Вальков, Валерий Владимирович.
Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе / В. В. Вальков, А. Д. Федосеев // Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.

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Переводная версия Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Федосеев, Александр Дмитриевич; Fedoseev, A. D.; Val'kov, V. V.
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    Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7 / С. Е. Никитин [и др.] // Вестник НГУ. Физика. - 2015. - Т. 10, Вып. 1. - С. 63-66. - Библиогр.: 8 . - ISSN 1818-7994
   Перевод заглавия: Features of magnetoresistance in the bilayer single crystal manganite La1.4Sr1.6Mn2O
Кл.слова (ненормированные):
манганиты лантана -- положительное магнетосопротивление -- manganite -- positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T < 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.
We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T < 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Никитин, Станислав Евгеньевич; Nikitin, S. E.; Попков, Сергей Иванович; Popkov, S. I.; Петров, Михаил Иванович; Petrov, M. I.; Терентьев, Константин Юрьевич; Terent'yev, K. Yu.; Семенов, Сергей Васильевич; Semenov, S. V.; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X ; 13 - 14 ноября 2014 г. ; Новосибирск)
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Semenov, S. V.
Universal behavior and temperature evolution of the magnetoresistance hysteresis in granular high-temperature superconductors Y-Ba-Cu-O / S. V. Semenov, D. A. Balaev, M. I. Petrov // Phys. Solid State. - 2021. - Vol. 63, Is. 7. - P. 1069-1080, DOI 10.1134/S1063783421070192. - Cited References: 80. - The authors are grateful to D.M. Gokhfeld for discussion of the results. The measurements of the transport properties were performed in part on a PPMS-6000 system of the Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
CRITICAL-CURRENT-DENSITY
CURRENT-VOLTAGE CHARACTERISTICS
MAGNETIC-FLUX COMPRESSION
Кл.слова (ненормированные):
granular HTS -- magnetoresistance hysteresis -- grain boundaries
Аннотация: Regularities in the behavior of the magnetoresistance hysteresis R(H) in the granular yttrium high-temperature superconductors (HTSs) have been established. For this purpose, a comparative analysis of the magnetotransport properties has been carried out on the granular HTS samples, which exhibit (i) approximately the same magnetic properties and temperatures of the onset of the superconducting transition (90.5–93.5 K, which is characteristic of HTS grains) and (ii) different critical transport currents JC (which is characteristic of grain boundaries). Despite a significant (by more than an order of magnitude) spread of the JC values for the three samples, a universal behavior of the magnetoresistance hysteresis has been found, which is apparently inherent in all the granular Y–Ba–Cu–O compounds. The R(H) hysteresis is extremely broad and, in a fairly wide external field range, the dependence of the magnetoresistance hysteresis width ΔН on the field Hdec (the external field for the decreasing hysteresis branch is Н = Hdec) is almost linear: ΔH ≈ Hdec. This behavior is observed over the entire temperature range of implementation of the superconducting state (the investigations have been carried out at temperatures of 77–88 and 4.2 K). The result obtained has been explained by considering the effective field in grain boundaries, which is a superposition of the external field and the field induced by the magnetic moments of grains. The field induced by grains, in turn, significantly increases in the region of grain boundaries due to the magnetic flux compression (the grain boundary length is shorter than the HTS grain size by several orders of magnitude). The aforesaid has been confirmed by the analysis of the R(H) hysteresis for the Y–Ba–Cu–O- and CuO-based HTS composite, in which the grain boundary length is purposefully increased; as a result, the flux compression is less pronounced and the R(H) hysteresis narrows.

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Публикация на русском языке Семенов, Сергей Васильевич. Универсальность поведения гистерезиса магнитосопротивления и его температурной эволюции для гранулярных высокотемпературных сверхпроводников Y-Ba-Cu-O [Текст] / С. В. Семенов, Д. А. Балаев, М. И. Петров // Физ. тверд. тела. - 2021. - Т. 63 Вып. 7. - С. 854-865

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Petrov, M. I.; Петров, Михаил Иванович; Семёнов, Сергей Васильевич
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Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite / N. V. Volkov [et al.] // Phys. Solid State. - 2002. - Vol. 44, Is. 7. - P. 1350-1354, DOI 10.1134/1.1494635. - Cited References: 17 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
COLOSSAL MAGNETORESISTANCE
   MAGNETIC-RESONANCE
   DOPED MANGANITES
   LA1-XCAXMNO3
   SEPARATION
   TRANSITION
   RELAXATION
   EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Vasil'ev, V. N.; Sablina, K. A.; Саблина, Клара Александровна
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Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 3. - P. 200-202, DOI 10.1134/1.1565633. - Cited References: 7 . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Univ, Krasnoyarsk, Russia
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Patrin, G. S.; Патрин, Геннадий Семёнович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sablina, K. A.; Саблина, Клара Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
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Balaev, D. A.
Tunnel Conductivity and Tunnel Magnetoresistance of the Fe-SiO Films: Interplay of the Magnetotransport and Magnetic Properties / D. A. Balaev, A. D. Balaev // Phys. Solid State. - 2019. - Vol. 61, Is. 7. - P. 1203-1210, DOI 10.1134/S1063783419070047. - Cited References: 48 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
GIANT MAGNETORESISTANCE
   GRANULAR FILMS
   TEMPERATURE
   TRANSPORT
Аннотация: The electrical properties of a system of nanogranular amorphous Fe–SiO films with a SiO concentration between 0 and 92 vol % have been investigated. The samples with a low SiO content are characterized by the metal-type conductivity. With an increase in the dielectric content x in the films, the concentration transition from the metal to tunneling conductivity occurs at x ≈ 0.6. At the same concentration, the ferromagnet–superparamagnet transition is observed, which was previously investigated by the magnetic method. The temperature dependences of the electrical resistivity ρ(T) for the compositions corresponding to the dielectric region obey the law ρ(T) ~ exp(2(C/kT)1/2), which is typical of the tunneling conductivity. The estimation of the metal grain sizes from the tunneling activation energy C has shown good agreement with the sizes obtained previously by analyzing the magnetic properties. In the dielectric region of the compositions, the giant magnetoresistive effect attaining 25% at low temperatures has been obtained.

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Публикация на русском языке

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Balaev, A. D.; Балаев, Александр Дмитриевич; Балаев, Дмитрий Александрович
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Kiselev, N. I.
Transverse magnetoresistance of single-crystal Ni films / N. I. Kiselev, Yu. I. Mankov, V. G. Pynko // Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 4. - P. 243-246. - Cited References: 7 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
Mankov, Yu. I.; Pynko, V. G.; Пынько, Виталий Григорьевич
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Transport properties of FeSi with cobalt impurities / G. Y. Yurkin [et al.] // TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - P493-496, DOI 10.4028/www.scientific.net/SSP.168-169.493 . - ISSN 1012-0394
Кл.слова (ненормированные):
iron monosilicide -- kondo effect -- magnetization -- resistivity -- spindependent scattering -- superparamagnetic cluster -- cobalt -- crystals -- electric resistance -- electron energy loss spectroscopy -- kondo effect -- magnetic field effects -- magnetic properties -- magnetization -- magnetoresistance -- scattering -- superparamagnetism -- transport properties -- cobalt -- electric conductivity -- electron scattering -- impurities -- kondo effect -- magnetism -- magnetization -- experimental investigations -- kondo models -- magnetoresistance properties -- resistivity -- si crystals -- spin dependent scattering -- superparamagnetic clusters -- crystal impurities -- crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.

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Держатели документа:
Kirensky Institute of Physics, SB, RAS, 660036, Krasnoyarsk, Russian Federation
Siberian Federal University, 660041, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Beletsky, V. V.
}
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10.

Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
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11.

Transport and magnetic phenomena in ZnO-С thin-film heterostructures / M. N. Volochaev, A. B. Granovsky, O. V. Zhilova [et al.] // Superlattices Microstruct. - 2020. - Vol. 140. - Ст. 106449, DOI 10.1016/j.spmi.2020.106449. - Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland . - ISSN 0749-6036
Кл.слова (ненормированные):
Zinc oxide -- Amorphous carbon -- Multi-layered structures -- Composites -- Hopping conductivity -- Weak localization -- Magnetoresistance
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk660036, Russian Federation
Lomonosov Moscow State University, Moscow119991, Russian Federation
Voronezh State Technical University, Voronezh394026, Russian Federation
National Research Centre ‘‘Kurchatov Institute”, Moscow123182, Russian Federation
Voronezh State University, Voronezh394003, Russian Federation
Lappeenranta-Lahti University of Technology, Lappeenranta FI53851, Finland

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Granovsky, A. B.; Zhilova, O. V.; Kalinin, Y. E.; Ryl'kov, V. V.; Sumets, M. P.; Makagonov, V. A.; Pankov, S. Y.; Sitnikov, A. V.; Fadeev, E.; Lahderanta, E.; Foshin, V.
}
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12.

Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films / L. Badía-Romano [et al.] // J. Magn. Magn. Mater. - 2014. - Vol. 364. - P. 24-33, DOI 10.1016/j.jmmm.2014.04.029. - Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPUTTERED FE/SI SUPERLATTICES
   INTERLAYER EXCHANGE
   GIANT MAGNETORESISTANCE
   MAGNETIC-PROPERTIES
   SILICIDE FORMATION
   EPITAXIAL-GROWTH
   ROOM-TEMPERATURE
   IRON DISILICIDE
   TRILAYER FILMS
   THIN-FILMS
Кл.слова (ненормированные):
Fe-Si multilayer -- Chemical transformation -- Fe silicide -- Interlayer exchange coupling -- Magnetic domain -- in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5
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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Univ Porto, Fac Ciencias, Dept Fis Astron, IN IFIMUP, P-4169007 Oporto, Portugal
Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
Univ Oviedo Principado Asturias, CSIC, CINN, E-33007 Oviedo, Spain
Forschungszentrum Julich, Elect Properties, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Aerospace Univ, Krasnoyarsk 660014, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Badía-Romano, L.; Rubín, J.; Magén, C.; Bartolomé, F.; Sesé, J.; Ibarra, M.R.; Bartolomé, J.; Hierro-Rodriguez, A.; Martín, J.I.; Alameda, J.M.; Bürgler, D.E.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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13.

Theory of spin filtering through quantum dots / J. . Fransson [et al.] // Phys. Rev. B. - 2003. - Vol. 67, Is. 20. - Ст. 205310, DOI 10.1103/PhysRevB.67.205310. - Cited References: 28 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
DEPENDENT TUNNELING JUNCTIONS
   NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETORESISTANCE
   BARRIER
   POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.

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Держатели документа:
Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Fransson, J.; Holmstrom, E.; Eriksson, O.; Sandalov, I.
}
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14.

Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface / P. Avramov [et al.] // J. Phys. Chem. A. - 2017. - Vol. 121, Is. 3. - P. 680-689, DOI 10.1021/acs.jpca.6b09696. - Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team. . - ISSN 1089-5639

РУБ Chemistry, Physical + Physics, Atomic, Molecular & Chemical
Рубрики:
HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.

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Держатели документа:
Kyungpook Natl Univ, Dept Chem, 80 Daehak Ro, Daegu 41566, South Korea.
Kyungpook Natl Univ, Green Nano Mat Res Ctr, 80 Daehak Ro, Daegu 41566, South Korea.
Siberian Fed Univ, 79 Svobodniy Pr, Krasnoyarsk 660041, Russia.
LV Kirensky Inst Phys SB RAS, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia.
Natl Inst Quantum & Radiol Sci & Technol QST, Naka, Ibaraki 3191106, Japan.
Natl Univ Sci & Technol MISiS, Moscow 119049, Russia.

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Kuklin, A. V.; Куклин, Артем Валентинович; Lee, H.; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Sakai, S.; Entani, S.; Naramoto, H.; Sorokin, P. B.; Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
}
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15.

The structure, electrical and magnetoresistance properties of heterogeneous films [In2O3/(Co40Fe40B20)34(SiO2)66]92 / M. N. Volochaev, O. V. Zhilova, S. Yu. Pankov [et al.] // AIP Conf. Proc. - 2019. - Vol. 2174: 6th International Young Researchers' Conference on Physics, Technologies and Innovation, PTI 2019 (20-23 May 2019) Conference code: 155607. - Ст. 020274, DOI 10.1063/1.5134425. - Cited References: 11. - This work was supported by the Ministry of Education and Science of the Russian Federation as the project part of the state task (No 3.1867.2017/4.6)
Аннотация: The [In2O3/(Co40Fe40B20)34(SiO2)66]92 thin films were obtained by ion beam sputtering. X-ray and TEM studies of the structure and phase composition showed that the [In2O3/(Co40Fe40B20)34(SiO2)66]92 films characterized by multilayer structure, where (Co40Fe40B20)34(SiO2)66 nanocomposite layers and In2O3 spacers are amourphous. It is shown that the introduction of In2O3 spacers in (Co40Fe40B20)34(SiO2)66 nanocomposite leads to decreasing in specific resistance due to creation continues conductivity layers of low-resistance In2O3. All investigated samples characterized by the presence of magnetoresistance both at 77 K and at room temperature, which is characteristic of ferromagnetic metal-dielectric nanocomposites.

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Держатели документа:
Kirensky Institute of Physics FRC KSC SB RAS, 50, Krasnoyarsk660036, Russian Federation
Department of Solid State Physics, Voronezh State Technical University, Voronezh, 394026, Russian Federation

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Pankov, S. Yu.; Sitnikov, A. V.; Makagonov, V. A.; Babkina, I. V.; International Young Researchers' Conference on Physics, Technologies and Innovation(6th ; 20-23 May 2019 ; Ekaterinburg, Russian Federation)
}
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16.

    The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device / N. V. Volkov [et al.] // J. Surf. Invest. - 2015. - Vol. 9, Is. 5. - P. 984-994, DOI 10.1134/S1027451015050432. - Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043. . - ISSN 1027-4510
   Перевод заглавия: Оптически индуцированный и управляемый напряжением магниторезистивный эффект в устройстве на основе кремния

РУБ Surfaces and Interfaces, Thin Films

Кл.слова (ненормированные):
magnetoresistance -- magnetotransport properties -- photoconductivity -- bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian branch, Krasnoyarsk, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Institute of Space Technology, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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17.

The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
}
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18.

The magnetic-field-driven effect of microwave detection in a manganite granular system / N. V. Volkov [et al.] // J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст. 15004, DOI 10.1088/0022-3727/41/1/015004. - Cited References: 24 . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
IDENTICAL METALS
   TUNNEL-JUNCTIONS
   MAGNETORESISTANCE
   RECTIFICATION
   SPINTRONICS
   TEMPERATURE
   PEROVSKITES
Кл.слова (ненормированные):
Bias currents -- Curie temperature -- Electric power generation -- Granular materials -- Magnetic field effects -- Microwave irradiation -- Voltage measurement -- Direct current voltage -- Magnetic tunnel junctions -- Metal insulator metal junctions -- Nonmagnetic metals -- Manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Shaykhutdinov, K. A.
Tsikalov, V. S.
Petrov, M. I.
Balaev, D. A.
Semenov, S. V.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Tsikalov, V. S.; Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Semenov, S. V.; Семенов, Сергей Васильевич
}
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19.

The influence of magnetic field on the frequency dependence of the impedance in the anion–substituted manganese chalcogenides / O. B. Romanova [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P4.4. - P. 232. - This work was financially supported by RFFI №15–42–04099 and assignment №114090470016. . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
chalcogenides -- impedance -- relaxation -- magnetoresistance

Держатели документа:
Scientific-Practical Materials Research Center NAS, Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Korolev, V. V.; Королёв В. В.; Kretinin, V. V.; Кретинин В. В.; Yanushkevich, K. I.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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20.

The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces / A. V. Kuklin [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 23-29, DOI 10.1016/j.jmmm.2016.12.096. - Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
HEXAGONAL BORON-NITRIDE
   THIN-FILMS
   GIANT MAGNETORESISTANCE
   METALLIC
Кл.слова (ненормированные):
Graphene nanoribbons -- DFT -- LSMO thin films -- Induced spin polarization -- h-BN nanoribbons -- Half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.

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Доп.точки доступа:
Kuklin, A. V.; Kuzubov, A. A.; Кузубов, Александр Александрович; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Lee, Hyosun; Sorokin, Pavel B.; Sakai, Seiji; Entani, Shiro; Naramoto, Hiroshi; Avramov, P. V.; Аврамов, Павел Вениаминович; Russian Science Foundation [14-13-00139]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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