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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Esters M., Johnson D. C., Yurkin G. Yu., Tarasov A. S., Rautsky M. V., Volochaev M. N., Lyashchenko S. A., Ivantsov R. D., Petrov D. A., Solovyov L. A.
Заглавие : The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2017. - Vol. 443. - P.107-115. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.07.022
Примечания : Cited References: 35. - The work was supported partly by the Grant of the President of the Russian Federation no. NSh-7559.2016.2. M.E. and D.C.J. acknowledge support from the National Science Foundation under grant DMR-1266217.
Ключевые слова (''Своб.индексиров.''): copper selenide--cucr2se4 films--magnetic anisotropy--trasnverse kerr effect--magnetic resonance--magnetoresistance
Аннотация: Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Kuklin A. V., Lee H., Kovaleva E. A., Sakai S., Entani S., Naramoto H., Sorokin P. B.
Заглавие : Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface
Коллективы : Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
Место публикации : J. Phys. Chem. A: American Chemical Society, 2017. - Vol. 121, Is. 3. - P.680-689. - ISSN 1089-5639, DOI 10.1021/acs.jpca.6b09696
Примечания : Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Pochekutov M. A.
Заглавие : Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations
Место публикации : J. Appl. Phys.: American Institute of Physics, 2017. - Vol. 122, Is. 12. - Ст.123902. - ISSN 00218979 (ISSN), DOI 10.1063/1.4986253
Примечания : Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018.
Ключевые слова (''Своб.индексиров.''): anisotropy--high temperature superconductors--hysteresis--magnetic fields--magnetic flux--magnetism--magnetoresistance--different-magnetic fields--external magnetic field--granular superconductors--macroscopic transport--magnetic flux compression--magneto transport properties--model representation--transport currents--superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Popkov S. I., Shaikhutdinov K. A., Nikitin S. E., Petrov M. I., Terent'yev K. Yu., Semenov S. V.
Заглавие : Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.2. - P.222. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4
Ключевые слова (''Своб.индексиров.''): bilayer manganites--positive magnetoresistance--spin-dependent tunneling
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.4. - P.214. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S. S., Kretinin V. V., Sitnikov M. N., Romanova O. B., Korolev V. K., Pichugin A. Y.
Заглавие : Magnetoresistance TmxMn1–xS in paramagnetic state
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.5. - P.226. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4
Ключевые слова (''Своб.индексиров.''): magnetoresistance--hall resistance--conductivity
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Magnetic field-sensitive lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P4.11. - P.239. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 1. - This work was supported by the Russian Foundation of Basic Research, project nos. 14-02-00234
Ключевые слова (''Своб.индексиров.''): hybrid structure--magnetoresistance--lateral photovoltage
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Korolev V. V., Kretinin, V. V., Yanushkevich K. I.
Заглавие : The influence of magnetic field on the frequency dependence of the impedance in the anion–substituted manganese chalcogenides
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P4.4. - P.232. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : This work was financially supported by RFFI №15–42–04099 and assignment №114090470016.
Ключевые слова (''Своб.индексиров.''): chalcogenides--impedance--relaxation--magnetoresistance
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Rudenko R. Yu., Yushkov V. I., Kosyrev N. N.
Заглавие : Structural and Magnetic Properties of the Al2O3/Ge-p/Al2O3/Co System
Коллективы : Russian Foundation for Basic Research [18-02-00161-a]
Место публикации : Tech. Phys. - 2019. - Vol. 64, Is. 2. - P.236-241. - ISSN 1063-7842, DOI 10.1134/S1063784219020087. - ISSN 1090-6525(eISSN)
Примечания : Cited References: 18. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a.
Предметные рубрики: LAYER-DEPOSITED AL2O3
MAGNETORESISTANCE
GAAS
Аннотация: The Al2O3/Ge-p/Al2O3/Co system with an Al2O3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev A. D., Balaev D. A.
Заглавие : Dissipation in granular high-temperature superconductors: New approach to describing the magnetoresistance hysteresis and the resistive transition in external magnetic fields
Коллективы : Russian Science Foundation [17-72-10050]
Место публикации : J. Appl. Phys. - 2019. - Vol. 125, Is. 3. - Ст.033903. - ISSN 0021-8979, DOI 10.1063/1.5066602. - ISSN 1089-7550(eISSN)
Примечания : Cited References: 79. - The work was supported by the Russian Science Foundation (Grant No. 17-72-10050). We are grateful to K. Terent'ev for the preparation of the sample and D. Gokhfeld for useful discussions.
Предметные рубрики: CRITICAL-CURRENT-DENSITY
VORTEX-GLASS SUPERCONDUCTIVITY
ANISOTROPIC ENERGY-DISSIPATION
Аннотация: An approach to describing the R(H) magnetoresistance hysteresis in granular high-temperature superconductors and behavior of the R(T) resistive transition in these objects in an external magnetic field is proposed. The dissipation is attributed to the subsystem of intergrain boundaries, which form a Josephson junction network. The approach is based on accounting for the effect of magnetic moments of superconducting grains on the resulting (effective) field in the intergrain medium. The described procedure includes (i) establishing of the degree of magnetic flux crowding in the intergrain medium by comparing the experimental data on the R(H) magnetoresistance hysteresis and magnetization M(H), (ii) determining the effective field Beff in the intergrain medium as a function of external field H and temperature T with regard to the thermomagnetic prehistory, and (iii) fitting the experimental R(H) and R(T) dependences using the Arrhenius expression R ∼ exp(–EJ/ kB T), where EJ is the parameter corresponding to the Josephson coupling energy. The fundamental novelty of the proposed approach is the extraction of the functional dependences of EJ on the effective field Beff in the intergrain medium rather than on the external field H, as was made in many previous works. It is shown that the proposed approach makes it possible to adequately describe both the R(H) hysteretic dependences and R(T) dependences of the Y-Ba-Cu-O high-temperature superconductor samples with different morphologies and critical current densities.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev D. A.
Заглавие : Magnetoresistance Hysteresis Evolution in the Granular Y–Ba–Cu–O High-Temperature Superconductor in a Wide Temperature Range
Место публикации : J. Supercond. Novel Magn. - 2019. - Vol. 32, Is. 8. - P.2409–2419. - ISSN 15571939 (ISSN) , DOI 10.1007/s10948-019-5043-2
Примечания : Cited References: 55. - The work was supported by the Russian Science Foundation (Grant No. 17-72-10050).
Аннотация: The temperature evolution of the magnetoresistance hysteresis in the granular YBa2Cu3O7-δ high-temperature (TC ≈ 92 K) superconductor has been investigated. The measurements have been performed in the high-temperature region (78–90 K) and at the liquid helium temperature (4.2 K). The results obtained have been analyzed using the developed model of the behavior of transport properties of a granular high-temperature superconductor in an external magnetic field. Within the discussed model, the dissipation of the grain boundary subsystem is determined by the intergrain spacing-averaged effective field Beff, which is a superposition of external field H and the field induced by the magnetic moments of superconducting grains. Such a consideration yields the expression Beff(H) = H − 4πM(H) α for the effective field in the intergrain medium, where M(H) is the experimental hysteretic dependence of magnetization and α is the parameter of magnetic flux crowding in the intergrain medium. Here, the magnetoresistance is assumed to be proportional to the absolute value of the effective field: R(H) ~ |Beff(H)|. Analysis of the experimental R(H) and M(H) dependences obtained under the same conditions for the investigated high-temperature superconductor sample showed that in the high-temperature region this parameter is α ≈ 25. At the low temperature (4.2 K), we may state that the degree of flux crowding increases and the estimated α value is ~ 50. The estimates made are indicative of the strong effect of flux compression in the intergrain medium on the magnetotransport properties of the investigated granular high-temperature superconductor system. Possible reasons for a discrepancy between the developed model concepts and experimentally observed low-temperature R(H) hysteresis are analyzed.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Kharkov A. M., Masyugin A. N., Kretinin V. V., Fisenko O. B., Gorev M. V.
Заглавие : Influence of Induced Electrical Polarization on the Magnetoresistance and Magnetoimpedance in the Spin‐Disordered TmxMn1−xS Solid Solution
Место публикации : Phys. Status Solidi B. - 2019. - Vol. 256, Is. 10. - Ст.1900043. - ISSN 03701972 (ISSN) , DOI 10.1002/pssb.201900043
Примечания : Cited References: 25
Аннотация: The transport properties of the TmxMn1–xS (x ≤ 0.15) solid solutions in the temperature range of 200–600 K have been investigated. The temperatures of lattice polaron pinning accompanied by the lattice strain, condensation of the infrared modes, and thermionic emission have been determined. The change of the carrier sign with temperature has been found from the Hall coefficient data and dragging of electrons by phonons, from the thermopower data. The dependence of the magnetoresistance on the concentration, current, and voltage has been established from the I–V characteristics measured without field and in an applied magnetic field of H = 8 kOe in the temperature range of 300–500 K. The functional temperature dependence of the carrier relaxation time has been determined using the impedance data. The concentration region with the magnetoimpedance sign varying with frequency and temperature has been found. The increase in the relaxation time of the induced electric polarization with increasing concentration of thulium ions has been observed. The experimental data have been interpreted in the framework of the Debye and Maxwell–Wagner models, as well as the theoretical model for the Rashba spin–orbit interaction.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Udod L. V., Sitnikov M. N., Kretinin V. V., Yanushkevich K. I., Velikanov D. A.
Заглавие : Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides
Коллективы : Russian Foundation for Basic Research [18-52-00009 Bel_a]; Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-240001 r_a]
Место публикации : J. Appl. Phys. - 2019. - Vol. 125, Is. 17. - Ст.175706. - ISSN 0021-8979, DOI 10.1063/1.5085701. - ISSN 1089-7550(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research (Project No. 18-52-00009 Bel_a). The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Project No. 18-42-240001 r_a), to the research project: "Inversion of the Sign of the Components of the Magnetoelectric Tensor on the Temperature in Films of Bismuth Garnet Ferrite Replaced by Neodymium." This study was carried out in the framework of the state task No. 3.5743.2017/6.7.
Предметные рубрики: MAGNETIC-PROPERTIES
RESISTIVITY
Аннотация: New multifunction materials in the AgXMn1‒XS (Х = 0.05) system have been synthesized and investigated in the temperature range of 77‒500 K in magnetic fields up to 12 kOe. Near the temperature of the magnetic transition (ТN = 176 K), the anomalous behavior of the temperature dependence of magnetization has been observed and has been attributed to the formation of ferrons. An analysis of the infrared spectroscopy data and I‒V characteristics has revealed the spin-polaron subband splitting. Several conductivity channels have been found from the impedance spectra. The temperature and magnetic field dependences of the carrier relaxation time have been obtained. The magnetoresistance (−21%), magnetoimpedance (−65%), magnetothermopower (−40%), and photoconductivity effects have been detected. The majority carrier type, density, and mobility have been determined from the Hall-effect measurement data. The observed effects have been explained using a ferron model.Синтезированы и исследованы новые многофункциональные материалы системы AgXMn1-XS (Х=0.05) в интервале температур 77-500К в магнитных полях до 12 кЭ. В близи температуры магнитного перехода (ТN=176К) наблюдается аномальное поведение температурной зависимости намагниченности, вызванное образованием ферронов. Найдено расщепление спин-поляронной подзоны из ИК спектроскопии и вольт-амперных характеристик. Установлено несколько каналов проводимости из спектров импеданса, отличающихся частоте. Определена зависимость времени релаксации носителей заряда от температуры и магнитного поля. Обнаружено четыре эффекта: магнитосопротивление (-21%), магнитоимпеданс (-65%), магнитотермоЭДС (-40%) и фотопроводимость. Найдены: тип, концентрация и подвижность основных носителей заряда из холловских измерений. Обнаруженные эффекты объясняются в модели ферронов.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Sitnikov M. N., Kretinin V. V., Galyas, A., I, Yanushkevich, K., I
Заглавие : The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films
Коллективы : Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
Место публикации : Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст.085006. - ISSN 0268-1242, DOI 10.1088/1361-6641/aace44. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7.
Предметные рубрики: NEUTRON-SCATTERING
SURFACE-STATES
MNTE
CONDUCTIVITY
MECHANISM
Ключевые слова (''Своб.индексиров.''): polycrystalline films--magnetoresistance--impedance--polaron--magnetic--properties--thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V.
Заглавие : Double exchange model in the problem of the colossal magnetoresistance manganites
Коллективы : "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project
Место публикации : Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics”/ chairman G. A. Petrakovskii. - 2007. - P.8
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures
Место публикации : J. Magn. Magn. Mater. - 2018. - Vol. 451. - P.143-158. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.11.008
Примечания : Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046.
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photo-magneto-electric effect--magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Abramova G. M., Petrakovskii G. A., Volkov N. V., Bayukov O. A., Vorotynov A. M., Velikanov D. A., Kiselev N., Bovina A. F., Vasiliev A. D., Sokolov V. V., Boehm M., Szymchak R., Roessli B.
Заглавие : Physical properties and colossal magnetoresistance in 3d-sulfides
Коллективы : "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project
Место публикации : Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics”/ chairman G. A. Petrakovskii. - 2007. - P.12
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.
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