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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Magnetic field-sensitive lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P4.11. - P.239. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 1. - This work was supported by the Russian Foundation of Basic Research, project nos. 14-02-00234
Ключевые слова (''Своб.индексиров.''): hybrid structure--magnetoresistance--lateral photovoltage
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Kuklin A. V., Lee H., Kovaleva E. A., Sakai S., Entani S., Naramoto H., Sorokin P. B.
Заглавие : Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface
Коллективы : Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
Место публикации : J. Phys. Chem. A: American Chemical Society, 2017. - Vol. 121, Is. 3. - P.680-689. - ISSN 1089-5639, DOI 10.1021/acs.jpca.6b09696
Примечания : Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Esters M., Johnson D. C., Yurkin G. Yu., Tarasov A. S., Rautsky M. V., Volochaev M. N., Lyashchenko S. A., Ivantsov R. D., Petrov D. A., Solovyov L. A.
Заглавие : The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2017. - Vol. 443. - P.107-115. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.07.022
Примечания : Cited References: 35. - The work was supported partly by the Grant of the President of the Russian Federation no. NSh-7559.2016.2. M.E. and D.C.J. acknowledge support from the National Science Foundation under grant DMR-1266217.
Ключевые слова (''Своб.индексиров.''): copper selenide--cucr2se4 films--magnetic anisotropy--trasnverse kerr effect--magnetic resonance--magnetoresistance
Аннотация: Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Korolev V. V., Kretinin, V. V., Yanushkevich K. I.
Заглавие : The influence of magnetic field on the frequency dependence of the impedance in the anion–substituted manganese chalcogenides
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P4.4. - P.232. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : This work was financially supported by RFFI №15–42–04099 and assignment №114090470016.
Ключевые слова (''Своб.индексиров.''): chalcogenides--impedance--relaxation--magnetoresistance
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Volkov N. V., Tarasov A. S., Gustaitsev A. O., Varnakov S. N., Bondarev I. A.
Заглавие : Magnetotransport effects in the Mn/SiO2/p-Si Hybrid Structure
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P1.17. - P.77. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This study was supported by the Russian Foundation for Basic Research, project no. 14-02-00234-a
Ключевые слова (''Своб.индексиров.''): hybrid structures--impedance--magnetoresistance
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Eremin E. V., Korobtsov V. V., Balashev V. V., Vikulov V. A., Solovyov L. A., Volkov N. V.
Заглавие : Magnetic, transport, and magnetotransport properties of the textured Fe3O4 thin films reactively deposited onto SiO2/Si
Место публикации : J. Alloys Compd.: Elsevier, 2016. - Vol. 688. - P.1095-1100. - ISSN 09258388 (ISSN), DOI 10.1016/j.jallcom.2016.07.138
Примечания : Cited References: 40. - This work was supported in part by the Russian Foundation for Basic Research, project no. 14-02-00234; the Russian Academy of Sciences, Program “Far East” no. 0262-2015-0057; and the Ministry of Education and Science of the Russian Federation, state order no. 16.663.2014K. The XRD study was supported by the state budget allocated to the Russian Academy of Sciences, fundamental research project no. V. 45.3.1. The authors are grateful to the Krasnoyarsk Regional Fund for Science and Technical Activity Support and the Council of the President of the Russian Federation on Grants.
Ключевые слова (''Своб.индексиров.''): magnetite--magnetoresistance--reactive deposition
Аннотация: The structural, magnetic, transport, and magnetotransport properties of Fe3O4 thin films with thicknesses from 38 nm to 95 nm are systematically investigated. The occurrence of the Verwey transition in these films at a temperature of about 120 K is established. It is found that the temperature dependences of the magnetic moment have a feature near 40 K, which can be attributed to the multiferroic phase. According to the X-ray diffraction data, the film structure represents a (001) texture. As was established using transmission electron microscopy, the height and width of texture crystallites increase with film thickness. Analysis of the temperature dependences of the resistivity showed that the dominant carrier transport mechanism in the films is thermoactivated tunneling. The thermoactivation energy, along with the room-temperature resistivity, decreases with increasing film thicknesses, which is most likely related to the variation in the crystallite size, especially in the crystallite width. The field dependence of magnetoresistance behaves similarly over the entire temperature range and has a positive MR peak in weak fields, which is related to spin-dependent tunneling through Fe3O4 grains and antiferromagnetically coupled antiphase boundaries. © 2016 Elsevier B.V.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.4. - P.214. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S. S., Kretinin V. V., Sitnikov M. N., Romanova O. B., Korolev V. K., Pichugin A. Y.
Заглавие : Magnetoresistance TmxMn1–xS in paramagnetic state
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.5. - P.226. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4
Ключевые слова (''Своб.индексиров.''): magnetoresistance--hall resistance--conductivity
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Popkov S. I., Shaikhutdinov K. A., Nikitin S. E., Petrov M. I., Terent'yev K. Yu., Semenov S. V.
Заглавие : Positive magnetoresistance of single-crystal bilayer manganites (La1−zNdz)1.4Sr1.6Mn2O7
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O4.2. - P.222. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4
Ключевые слова (''Своб.индексиров.''): bilayer manganites--positive magnetoresistance--spin-dependent tunneling
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Sitnikov M. N., Kretinin V. V., Galyas, A., I, Yanushkevich, K., I
Заглавие : The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films
Коллективы : Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
Место публикации : Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст.085006. - ISSN 0268-1242, DOI 10.1088/1361-6641/aace44. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7.
Предметные рубрики: NEUTRON-SCATTERING
SURFACE-STATES
MNTE
CONDUCTIVITY
MECHANISM
Ключевые слова (''Своб.индексиров.''): polycrystalline films--magnetoresistance--impedance--polaron--magnetic--properties--thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev D. A.
Заглавие : Temperature behavior of the magnetoresistance hysteresis in a granular high-temperature superconductor: Magnetic flux compression in the intergrain medium
Место публикации : Physica C. - 2018. - Vol. 550. - P.19-26. - ISSN 09214534 (ISSN), DOI 10.1016/j.physc.2018.04.005
Примечания : Cited References: 56. - The work was supported by the Russian Science Foundation (Grant No. 17-72-10050 ).
Ключевые слова (''Своб.индексиров.''): barium compounds--copper compounds--grain boundaries--hysteresis--magnetic flux--magnetic moments--magnetization--magnetoresistance--yttrium barium copper oxides
Аннотация: Granular high-temperature superconductors (HTSs) are characterized by the hysteretic behavior of magnetoresistance. This phenomenon is attributed to the effective field in the intergrain medium of a granular HTS. At the grain boundaries, which are, in fact, weak Josephson couplings, the dissipation is observed. The effective field in the intergrain medium is a superposition of the external field and the field induced by magnetic moments of HTS grains. Meanwhile, analysis of the field width of the R(H) magnetoresistance hysteresis ΔH = Hdec − Hinc at Hdec = const, where Hinc and Hdec are increasing and decreasing branches of the R(H) hysteretic dependence, shows that the effective field in the intergrain medium exceeds by far both the external field and the field induced by magnetic moments of HTS grains. This situation suggests the magnetic flux compression in the intergrain medium because of the small length of grain boundaries, which amounts to ∼1 nm, i.e., is comparable with the coherence length and corresponds to Josephson tunneling in HTS materials. In this work, using the previously developed approach, we examine experimental data on the magnetoresistance and magnetization hysteresis in the granular YBa2Cu3O7 HTS compound in the range from 77 K to the critical temperature. According to the results obtained, the degree of magnetic flux compression determined by the parameter α in the expression for the effective field Beff(H) = H − 4π M(H) α in the intergrain medium remains constant over the investigated temperature range. All the features of the observed evolution of the R(H) hysteretic dependences are explained well within the proposed approach when the expression for Beff(H) contains the experimental M(H) magnetization data and the parameter α of about 20–25. The latter is indicative of the dominant effect of magnetic flux compression in the intergrain medium on the transport properties of granular HTS materials.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev A. D., Balaev D. A.
Заглавие : Dissipation in granular high-temperature superconductors: New approach to describing the magnetoresistance hysteresis and the resistive transition in external magnetic fields
Коллективы : Russian Science Foundation [17-72-10050]
Место публикации : J. Appl. Phys. - 2019. - Vol. 125, Is. 3. - Ст.033903. - ISSN 0021-8979, DOI 10.1063/1.5066602. - ISSN 1089-7550(eISSN)
Примечания : Cited References: 79. - The work was supported by the Russian Science Foundation (Grant No. 17-72-10050). We are grateful to K. Terent'ev for the preparation of the sample and D. Gokhfeld for useful discussions.
Предметные рубрики: CRITICAL-CURRENT-DENSITY
VORTEX-GLASS SUPERCONDUCTIVITY
ANISOTROPIC ENERGY-DISSIPATION
Аннотация: An approach to describing the R(H) magnetoresistance hysteresis in granular high-temperature superconductors and behavior of the R(T) resistive transition in these objects in an external magnetic field is proposed. The dissipation is attributed to the subsystem of intergrain boundaries, which form a Josephson junction network. The approach is based on accounting for the effect of magnetic moments of superconducting grains on the resulting (effective) field in the intergrain medium. The described procedure includes (i) establishing of the degree of magnetic flux crowding in the intergrain medium by comparing the experimental data on the R(H) magnetoresistance hysteresis and magnetization M(H), (ii) determining the effective field Beff in the intergrain medium as a function of external field H and temperature T with regard to the thermomagnetic prehistory, and (iii) fitting the experimental R(H) and R(T) dependences using the Arrhenius expression R ∼ exp(–EJ/ kB T), where EJ is the parameter corresponding to the Josephson coupling energy. The fundamental novelty of the proposed approach is the extraction of the functional dependences of EJ on the effective field Beff in the intergrain medium rather than on the external field H, as was made in many previous works. It is shown that the proposed approach makes it possible to adequately describe both the R(H) hysteretic dependences and R(T) dependences of the Y-Ba-Cu-O high-temperature superconductor samples with different morphologies and critical current densities.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev D. A.
Заглавие : Magnetoresistance Hysteresis Evolution in the Granular Y–Ba–Cu–O High-Temperature Superconductor in a Wide Temperature Range
Место публикации : J. Supercond. Novel Magn. - 2019. - Vol. 32, Is. 8. - P.2409–2419. - ISSN 15571939 (ISSN) , DOI 10.1007/s10948-019-5043-2
Примечания : Cited References: 55. - The work was supported by the Russian Science Foundation (Grant No. 17-72-10050).
Аннотация: The temperature evolution of the magnetoresistance hysteresis in the granular YBa2Cu3O7-δ high-temperature (TC ≈ 92 K) superconductor has been investigated. The measurements have been performed in the high-temperature region (78–90 K) and at the liquid helium temperature (4.2 K). The results obtained have been analyzed using the developed model of the behavior of transport properties of a granular high-temperature superconductor in an external magnetic field. Within the discussed model, the dissipation of the grain boundary subsystem is determined by the intergrain spacing-averaged effective field Beff, which is a superposition of external field H and the field induced by the magnetic moments of superconducting grains. Such a consideration yields the expression Beff(H) = H − 4πM(H) α for the effective field in the intergrain medium, where M(H) is the experimental hysteretic dependence of magnetization and α is the parameter of magnetic flux crowding in the intergrain medium. Here, the magnetoresistance is assumed to be proportional to the absolute value of the effective field: R(H) ~ |Beff(H)|. Analysis of the experimental R(H) and M(H) dependences obtained under the same conditions for the investigated high-temperature superconductor sample showed that in the high-temperature region this parameter is α ≈ 25. At the low temperature (4.2 K), we may state that the degree of flux crowding increases and the estimated α value is ~ 50. The estimates made are indicative of the strong effect of flux compression in the intergrain medium on the magnetotransport properties of the investigated granular high-temperature superconductor system. Possible reasons for a discrepancy between the developed model concepts and experimentally observed low-temperature R(H) hysteresis are analyzed.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Rudenko R. Yu., Yushkov V. I., Kosyrev N. N.
Заглавие : Structural and Magnetic Properties of the Al2O3/Ge-p/Al2O3/Co System
Коллективы : Russian Foundation for Basic Research [18-02-00161-a]
Место публикации : Tech. Phys. - 2019. - Vol. 64, Is. 2. - P.236-241. - ISSN 1063-7842, DOI 10.1134/S1063784219020087. - ISSN 1090-6525(eISSN)
Примечания : Cited References: 18. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a.
Предметные рубрики: LAYER-DEPOSITED AL2O3
MAGNETORESISTANCE
GAAS
Аннотация: The Al2O3/Ge-p/Al2O3/Co system with an Al2O3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Rautskii M. V., Stepanova E. A., Neznakhin D. S., Andreev N. V., Chichkov V. I.
Заглавие : Determination of the existence region of a Griffith-like phase in Pr1–xSrxMnO3/YSZ films
Коллективы : Russian Foundation for Basic Research [16-32-00209mol_a]; Council for Grants from the President of the Russian Federation [NSh7559.2016.2]; RF Ministry of Education and Sciences [3.61212017/8.9]
Место публикации : J. Exp. Theor. Phys. - 2017. - Vol. 125, Is. 6. - P.1090-1095. - ISSN 1063-7761, DOI 10.1134/S106377611712007X. - ISSN 1090-6509(eISSN)
Примечания : Cited References:34. - This study was supported by the Russian Foundation for Basic Research (project no. 16-32-00209mol_a) and the Council for Grants from the President of the Russian Federation (NSh7559.2016.2). E. A. Stepanova and D. S. Neznakhin were supported by the RF Ministry of Education and Sciences (State target no. 3.61212017/8.9).
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
ELECTRICAL-PROPERTIES
RARE-EARTH
Аннотация: We have studied the temperature dependences of the magnetic susceptibility and the electron magnetic resonance in Pr1–xSrxMnO3/YSZ polycrystalline films (x = 0.2, 0.4). The paramagnetic properties of samples indicate the presence of short-range-order ferromagnetic correlations above the phase transition temperature (Tc ). The existence region of such correlations has been considered using the Griffith theory.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Pochekutov M. A.
Заглавие : Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations
Место публикации : J. Appl. Phys.: American Institute of Physics, 2017. - Vol. 122, Is. 12. - Ст.123902. - ISSN 00218979 (ISSN), DOI 10.1063/1.4986253
Примечания : Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018.
Ключевые слова (''Своб.индексиров.''): anisotropy--high temperature superconductors--hysteresis--magnetic fields--magnetic flux--magnetism--magnetoresistance--different-magnetic fields--external magnetic field--granular superconductors--macroscopic transport--magnetic flux compression--magneto transport properties--model representation--transport currents--superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures
Место публикации : J. Magn. Magn. Mater. - 2018. - Vol. 451. - P.143-158. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.11.008
Примечания : Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046.
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photo-magneto-electric effect--magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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