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Gavrichkov, V. A.
Superexchange in 2D perovskite HTSC with stripe nanostructure / V. A. Gavrichkov // International conference "Functional materials" : book of abstracts / ed. V. N. Berzhansky ; org. com. S. G. Ovchinnikov [et al.]. - Simferopol, 2021. - P. 223-2224. - Библиогр.: 3 назв. - The reported study was supported by the grant RFFI 19-02-00034 and the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science according to the research project ”Studies of superexchange and electron-phonon interactions in correlated systems as a basis for searching for promising functional materials No. 20-42-240016.

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Доп.точки доступа:
Berzhansky, V. N. \ed.\; Бержанский, Владимир Наумович; Ovchinnikov, S. G. \org. com.\; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович; "Functional materials", International conference(2021 ; Oct. 4-8 ; Alushta, Russia); Крымский федеральный университет имени В.И. Вернадского
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Effect of calcination temperature on activity of Fe2O3-Al2O3 nanocomposite catalysts in CO oxidation / A. M. Kremneva, A. V. Fedorov, O. A. Bulavchenko [et al.] // Catal. Lett. - 2020. - Vol. 150. - P. 3377-3385, DOI 10.1007/s10562-020-03250-8. - Cited References: 31. - This work was supported by the Russian Science Foundation (Grant No. 17-73-20157). The experiments were performed using facilities of the shared research center "National center of investigation of catalysts" at Boreskov Institute of Catalysis. The authors thank A.Yu. Gladky for the TPR measurements and Z.S. Vinokurov for the XRD measurements. . - ISSN 1011-372X. - ISSN 1572-879X

РУБ Chemistry, Physical
Рубрики:
MOSSBAUER
   SPECTROSCOPY
   CHEMISTRY
   IRON
   XPS
   ADSORPTION
   OXYGEN
   FE
Кл.слова (ненормированные):
Environmental catalysis -- Nanostructure -- Gasification -- Oxidation -- Mossbauer spectroscopy
Аннотация: Nanocomposite Fe–Al oxide catalysts were prepared by the melting of iron and aluminum nitrates with the subsequent calcination in air at different temperatures. It was found that the catalysts calcined at 450 °C are more active in the oxidation of CO than the catalysts calcined at 700 °C. X-ray diffraction and X-ray photoelectron spectroscopy showed that all the catalysts consist of hematite, α-Fe2O3 nanoparticles, and Al2O3 in an amorphous state. Iron oxide is the active component, which provides the oxidation of CO, while alumina is a texture promoter. The increase in the calcination temperature leads to a minor increase in the average size of hematite nanoparticles and an insignificant decrease in the specific surface area. Kinetic measurements showed that the oxidation of CO over the Fe–Al catalysts calcined at 450 and 700 °C proceeds with the activation energy of 61–69 and 91 kJ/mol, respectively. This means that the low-temperature and high-temperature catalysts contain different active species. Temperature-programmed reduction with CO indicated that the decrease in the calcination temperature improves the reducibility of the Fe-Al nanocomposites. According to 57Fe Mössbauer spectroscopy, the low-temperature catalysts contain hydrated iron oxides (acagenite and ferrihydrite) and a significant amount of highly defective hematite, which is absent in the high-temperature catalyst. These species can provide the enhanced activity of the low-temperature catalysts in the oxidation of CO.

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Держатели документа:
Boreskov Inst Catalysis, Novosibirsk 630090, Russia.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Kremneva, A. M.; Fedorov, A. V.; Bulavchenko, O. A.; Knyazev, Yu. V.; Князев, Юрий Владимирович; Saraev, A. A.; Yakovlev, V. A.; Kaichev, V. V.; Russian Science FoundationRussian Science Foundation (RSF) [17-73-20157]; National center of investigation of catalysts" at Boreskov Institute of Catalysis
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    Magnetoimpedance Effect in a SOI-Based Structure / D. A. Smolyakov [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 98-100, DOI 10.1134/S1063782619140215. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Эффект магнитоимпеданса в структуре на основе КНИ
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
magnetoimpedance -- spintronics -- silicone on insulator -- nanosized semiconductors -- interface states
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Siberian State University of Science and Technology, Krasnoyarsk, 660014 Russia

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич
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    Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'Kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P266-275, DOI 10.1134/S1063776111060070. - Cited Reference Count: 30. - Гранты: This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. - Финансирующая организация: Russian Foundation for Basic Research [09-02-00127]; Russian Federation [MK-1300.2011.2] . - AUG. - ISSN 1063-7761
Рубрики:
CONDUCTION
   ANISOTROPY
   JUNCTIONS
Кл.слова (ненормированные):
antiferromagnetic coupling -- colossal magnetoresistance effect -- iv characteristics -- metallic contacts -- potential profiles -- spectral characteristics -- spin dependent transport -- spin dimer -- spin moments -- spin-dependent electron transport -- spin-flip process -- tight-binding approximations -- transmission coefficients -- antiferromagnetism -- colossal magnetoresistance -- current voltage characteristics -- electric resistance -- nanostructures -- transport properties -- magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Aksenov, S.V.
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Oreshonkov, A. S.
Phonon dynamics in MoSi2N4: insights from DFT calculations / A. S. Oreshonkov, E. V. Sukhanova, Z. I. Popov // Phys. Chem. Chem. Phys. - 2023. - Vol. 25, Is. 43. - P. 29831-29841, DOI 10.1039/D3CP02921B. - Cited References: 74. - The authors acknowledge financial support from Russian Science Foundation (project №21-73-20183, https://rscf.ru/project/21-73-20183/) . - ISSN 1463-9076. - ISSN 1463-9084
Кл.слова (ненормированные):
monolayer -- bulk -- Raman spectrum -- nanostructure -- stability
Аннотация: We have reported the density functional theory investigations on the monolayer, 2 layered and bulk MoSi2N4 in three structural modifications called as α1 [Science, DOI: 10.1126/science.abb7023], α2 and α3 [Adv. Funct. Mater., DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayer, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference between in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that Raman line at 348 cm–1 in the experimental spectra of MoSi2N4, can have more complex explanation then just Γ-point Raman-active vibration as was discussed before in [Science, DOI: 10.1126/science.abb7023].

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Держатели документа:
Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, Russia

Доп.точки доступа:
Sukhanova, E. V.; Popov, Z. I.; Орешонков, Александр Сергеевич
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    Сверхвысоковакуумная установка для получения и исследования наноструктур магнитоэллипсометрическими методами in situ / Н. Н. Косырев, Д. А. Шевцов [и др.] // Решетневские чтения : [Электронный ресурс] : материалы XIV Междунар. науч. конф., посвяще. памяти ген. конструктора ракет.-космич. систем акад. М. Ф. Решетнева : в 2-х ч. / Сиб. гос. аэрокосмич. ун-т.; под общ. ред. Ю.Ю. Логинова. - Красноярск, 2010. - Ч. 2. - С. 582-583. - Библиогр.: 6. - Работа выполнена в рамках программы № 4.1 ОФН РАН «Спинтроника», программы Президиума РАН № 27.10, инте грационного проекта СО РАН и ДВО РАН № 22, федеральной целевой программы «Научные и научно-педагогические кад ры инновационной России» на 2009–2013 гг. (код проекта: НК-744П/ГК П1
   Перевод заглавия: Ultra high vacuum installation for nanostructure production with magnetoellipsometric control
Аннотация: Описана сверхвысоковакуумная камера, позволяющая изготовлять наноструктуры на основе тонких маг нитных пленок. В качестве метода контроля параметров растущей структуры предложена новая методи ка – спектральная магнитоэллипсометрия, позволяющая получать информацию о структурных, оптических и магнитных свойствах непосредственно в процессе изготовления в реальном времени.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Логинов, Ю. Ю. \ред.\; Косырев, Николай Николаевич; Kosyrev, N.N.; Шевцов, Д. А.; Варнаков, Сергей Николаевич; Varnakov S.N.; Худяков, Алексей Евгеньевич; Ефремов, А.В.; Рыхлицкий, С. В.; Швец, Василий Александрович; "Решетневские чтения", международная научная конференция(14 ; 2010 ; нояб. ; 10-12 ; Красноярск); Сибирский государственный университет науки и технологий им. акад. М. Ф. Решетнева; Информационные спутниковые системы им. академика М. Ф. Решетнева, АО; Красноярский машиностроительный завод, ОАО
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Fano mechanism of the giant magnetoresistance formation in a spin nanostructure arXiv: 1109.0391 vl. - / Val'kov V.V., Aksenov S.V. - [Б. м. : б. и.]. - Б. ц.

Доп.точки доступа:
Val'kov, V.V.; Aksenov, S.V.}
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    Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures / I. A. Bondarev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 88-92, DOI 10.1134/S1063782619140045. - Cited References: 27. - The work was supported by the Russian Foundation for Basic Research project no. 17-02-00302. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Исследование фотонапряжения в МДП структуре Mn/SiO2/n-Si при криогенных температурах
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
lateral photovoltage -- transverse photovoltage -- MOS structures -- low temperature -- space-charge region
Аннотация: Lateral photovoltaic effect in metal/insulator/semiconductor hybrid structures is a significant phenomenon for spintronics, as it establishes the interplay between the optical irradiation, electronic transport and spin-dependent properties of carriers. In present work we investigated photovoltaic phenomena in Mn/SiO2/n-Si MOS structure. The sample was prepared on a single-crystal n-Si (phosphorus-doped) substrate. The SiO2 layer with thickness of 1.5 nm was formed on the substrate surface by a chemical method. Manganese film with thickness of 15nm was deposited by thermal evaporation in ultrahigh vacuum in the “Angara” chamber. It was observed that at T < 45 K the values of lateral and transversal photovoltage nonmonotonically depend on the temperature and such dependences show complex behavior. Features of the photovoltage dependence on temperature, in the region above 20 K are explained by the change of carriers’ mobility and the competition between carriers’ drift velocity in the electric field of the space-charge region and their diffusion rate in the transverse and lateral directions. Below 20 K, the main contribution into the photovoltage is given by hot electrons injected from surface states levels to the conduction band. A strong magnetic field influence on the photovoltage below 20 K was observed. We associate it with the Lorenz force effect on the hot electrons, although we also don’t exclude the presence of mechanisms caused by spindependent scattering and recombination of hot electrons at occupied donor states.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036 Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041 Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович
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Val'kov, V. V.
Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P. 266-275, DOI 10.1134/S1063776111060070. - Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
CONDUCTION
ANISOTROPY
JUNCTIONS
Кл.слова (ненормированные):
Antiferromagnetic coupling -- Colossal magnetoresistance effect -- IV characteristics -- Metallic contacts -- Potential profiles -- Spectral characteristics -- Spin dependent transport -- Spin dimer -- Spin moments -- Spin-dependent electron transport -- Spin-flip process -- Tight-binding approximations -- Transmission coefficients -- Antiferromagnetism -- Colossal magnetoresistance -- Current voltage characteristics -- Electric resistance -- Nanostructures -- Transport properties -- Magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
[Val'kov, V. V.
Aksenov, S. V.] Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
[Val'kov, V. V.
Aksenov, S. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Val'kov, V. V.] Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Reshetnikov Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович
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10.

Spin states of 2D nanocomposites of Ni and V nanoclusters on hexagonal h-BN, BC3 and graphene / P. Avramov [et al.] // J. Mater. Sci. Technol. - 2015. - Vol. 31, Is. 10. - P. 979-985, DOI 10.1016/j.jmst.2015.08.008. - Cited References:21. - The work of Russian team was supported by Russian Scientific Foundation (Grant No. 14-13-00139). P.V.A. acknowledges JAEA ASRC and Molecular Spintronics Group for hospitality and fruitful collaboration. . - ISSN 1005-0302

РУБ Materials Science, Multidisciplinary + Metallurgy & Metallurgical
Рубрики:
BORON-NITRIDE
FILMS
Кл.слова (ненормированные):
Electronic structure -- Metal nanostructure -- Nanocomposites -- Graphene -- h-BN -- BC3 -- Spin states
Аннотация: Atomic and electronic structures of adsorbed nickel and vanadium atoms and nanoclusters (Ni-n and V-n, n = 1-10) on hexagonal h-BN and BC3 lattices were studied using DFT PBE/PBC/PW (Perdew-Burke-Ernzerhof potential of density functional theory/periodic boundary conditions/plane wave basis set) technique. For the sake of comparison the structure and properties of the same nanoclusters deposited on pristine graphene were calculated as well. It was found that for all types of supports an increase of n from 1 to 10 leaded to decrease of coordination types from eta(6) to eta(2) and eta(1). The h-BN- and BC3-based nanocomposites were characterized by high (up to 18 mu for Ni10/BC3) magnetic moments of the nanoclusters and featured by positive binding energies. The graphene-based nanocomposites revealed energetic stability and, in general, lower magnetic moments per unit cell. The direct potential energy barriers for migration of Ni eta(2)/eta(2) and eta(6)/eta(6) types of dimers on graphene were low (10.9-28.9 kJ/mol) with high reverse barriers for eta(6)/eta(6) dimers, which favored dynamically equilibrated Ni clusterization on graphene. Copyright (C) 2015, The editorial office of Journal of Materials Science & Technology. Published by Elsevier Limited. All rights reserved.

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Держатели документа:
Kyungpook Natl Univ, Taegu 702701, South Korea.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Academgorodok, Russia.
Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan.

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Sakai, S.; Entani, S.; Naramoto, H.; Eliseeva, N. S.; Елисеева, Наталья Сергеевна; Russian Scientific Foundation [14-13-00139]
}
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