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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Shanidze, Lev V., Lukyanenko A. V., Baron F. A., Krasitskaya, Vasilisa V., Kichkailo, Anna S., Tarasov A. S., Volkov N. V.
Заглавие : Protein biosensor based on Schottky barrier nanowire field effect transistor
Место публикации : Talanta. - 2022. - Vol. 239. - Ст.123092. - ISSN 0039-9140 (ISSN), DOI 10.1016/j.talanta.2021.123092. - ISSN 1873-3573 (eISSN)
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project № 20-32-90134. The authors thank RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P.B., Kvashnin D.G., Kvashnin A.G., Avramov P. V., Chernozatonskii L.A.
Заглавие : Theoretical study of elastic properties of SiC nanowires of different shapes
Место публикации : J. Nanosci. Nanotechnol. - 2010. - Vol. 10, Is. 8. - P.4992-4997. - ISSN 1533-4880, DOI 10.1166/jnn.2010.2424. - ISSN 1533-4899
Примечания : Cited Reference Count: 49. - Гранты: This work was partially supported by JSPS-RFBR collaborative grant 09-02-92107. The electronic structure calculations have been performed on the Joint Supercomputer Centre of the Russian Academy of Sciences. One of the authors (Pavel V. Avramov) acknowledges the encouragement of Professor K. Morokuma, research leader of Fukui Institute, Kyoto University and Dr. Alister Page for kind help and support. The geometry of all structures was visualized by ChemCraft software.SUP53/SUPФинансирующая организация: JSPS-RFBR [09-02-92107]; Fukui Institute, Kyoto University
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
SILICON-CARBIDE
THERMAL-STABILITY
CARBON NANOTUBES
NANORODS
GROWTH
SURFACES
NANOCRYSTALS
POTENTIALS
CONSTANTS
Ключевые слова (''Своб.индексиров.''): silicon carbide--nanowires--elastic properties--dft--molecular mechanics--dft--elastic properties--molecular mechanics--nanowires--silicon carbide--atomic structure--cubic phasis--dft--effective size--elastic properties--sic nanowire--silicon carbide nanowires--theoretical study--wire geometries--young's modulus--crystal atomic structure--density functional theory--elastic moduli--elasticity--molecular mechanics--nanowires--wire--silicon carbide
Аннотация: The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular mechanics. Upon surface relaxation, surface reconstruction led to the splitting of the wire geometry, forming both hexagonal (surface) and cubic phases (bulk). The behavior of the pristine SiC wires under compression and stretching was studied and Young's moduli were obtained. For Y-shaped SiC nanowires the effective Young's moduli and behavior in inelastic regime were elucidated.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Сацук, Светлана Александровна, Комогорцев, Сергей Викторович
Заглавие : Микромагнитное моделирование влияния поликристаллического строения ферромагнитной нанонити на петлю гистерезиса
Коллективы : "Новое в магнетизме и магнитных материалах", международная конференция, Научный совет по физике конденсированных сред РАН, МИРЭА - Российский технологический университет, Московский государственный университет им. М.В. Ломоносова, Магнитное общество России
Место публикации : Новое в магнетизме и магнитных материалах: сборник трудов XXIV международной конференции/ прогр. ком.: Р. С. Исхаков, С. Г. Овчинников [и др.]. - 2021. - Секция 3: Микромагнетизм и доменная структура. - Ст.3-55-57
Примечания : Библиогр.: 4. - Исследование выполнено при финансовой поддержке РФФИ, Правительства Красноярского края и Красноярского краевого фонда науки в рамках научного проекта №20-42-240001.
Ключевые слова (''Своб.индексиров.''): нанонит--коэрцитивность--микромагнетизм
Аннотация: Проведено систематическое микромагнитное моделирование петель гистерезиса ферромагнитных нанонитей представляющих собой одномерную цепочку случайно ориентированных кристаллитов и учитывающее три основных вклада в магнитную энергию нити (обменный, диполь-дипольный и энергию анизотропии кристаллита). В случаях, когда одним из трех вкладов в энергию можно пренебречь, численные расчеты хорошо согласуются с результатами известных, аналитически изученных микромагнитных проблем. В случае, когда все три вклада сопоставимы, наблюдается сложное немонотонное поведение коэрцитивной силы от размера кристаллита и константы магнитной анизотропии. С целью интерпретации этих изменений вводится новый микромагнитный масштаб, учитывающий все три вклада в магнитную энергию нити, а также осуществляющий корректный переход к аналитически изученным пределам, учитывающим конкуренцию каких-либо двух вкладов.Extensive micromagnetic simulation results of the hysteresis loops in ferromagnetic nanowire with randomly oriented crystallites ordered in one chain is presented. Three main contributions to the magnetic energy of the wire had been taken into account: exchange, dipole-dipole, and the magnetic anisotropy energy of the crystallite. In cases where one of the three contributions to the energy can be neglected, the numerical calculations are in good agreement with the results of the well-known, analytically studied micromagnetic problems. In the case when all three contributions are comparable, a complex non-monotonic dependence of the coercive force on the crystallite size and the magnetic anisotropy constant is observed. In order to interpret these changes, a new micromagnetic scale is introduced, which takes into account all three contributions to the magnetic energy of the wire, and performs a correct transition to the analytically studied limits, which take into account the competition of any two contributions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Volochaev M. N., Zelenov F. V., Yakovlev I. A., Bondarev I. A., Volkov N. V.
Заглавие : Technique for fabricating ferromagnetic/silicon active devices and their transport properties
Место публикации : J. Surf. Invest. - 2021. - Vol. 15, Is. 1. - P.65-69. - ISSN 10274510 (ISSN), DOI 10.1134/S1027451021010109
Примечания : Cited References: 15. - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, the Presidium of the Russian Academy of Sciences (Program no. 32 “Nanostructures: Physics, Chemistry, Biology, and Fundamentals of Technologies”), and the Russian Foundation for Basic Research, the Government of Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243 022
Аннотация: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Satsuk S. A., Komogortsev S. V.
Заглавие : Micromagnetic modeling of the polycrystalline structure effect to the hysteresis loop in ferromagnetic nanowire
Коллективы : Dynamic Systems and Computer Science: Theory and Applications
Место публикации : 2020 Dynamic Systems and Computer Science: Theory and Applications (19-22 October 2020 ; Irkutsk, Russian Federation). Journal of Physics: Conference Series. - 2021. - Vol. 1847, Is. 1. - Ст.012045. - , DOI 10.1088/1742-6596/1847/1/012045
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project 18-42-240006
Аннотация: Extensive micromagnetic simulation results of the hysteresis loops in ferromagnetic nanowire with randomly oriented crystallites ordered in one chain is presented. Three main contributions to the magnetic energy of the wire had been taken into account: exchange, dipole-dipole, and the magnetic anisotropy energy of the crystallite. In cases where one of the three contributions to the energy can be neglected, the numerical calculations are in good agreement with the results of the well-known, analytically studied micromagnetic problems. In the case when all three contributions are comparable, a complex non-monotonic dependence of the coercive force on the crystallite size and the magnetic anisotropy constant is observed. In order to interpret these changes, a new micromagnetic scale is introduced, which takes into account all three contributions to the magnetic energy of the wire, and performs a correct transition to the analytically studied limits, which take into accountthe competition of any two contributions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P.B., Kvashnin A.G., Kvashnin D.G., Filicheva J.A., Avramov P. V., Chernozatonskii L.A., Fedorov A. S.
Заглавие : Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires
Место публикации : ACS Nano. - 2010. - Vol. 4, Is. 5. - P.2784-2790. - MAY. - ISSN 1936-0851, DOI 10.1021/nn9018027
Примечания : Cited Reference Count: 28. - Гранты: P.B.S. acknowledges partial support by the National Science Foundation grant CMMI-0708096, NIRT. L.A.C. was supported by the Russian Academy of Sciences, program No. 21. P.V.A. and P.B.S. also acknowledge the collaborative RFBR-JSPS Grant No. 09-02-92107-Phi. All calculations have been performed on the Joint Supercomputer Center of the Russian Academy of Sciences. The geometry of all presented structures was visualized by ChemCraft software.Финансирующая организация: National Science Foundation [CMMI-0708096]; NIRT; Russian Academy of Sciences [21]; RFBR-JSPS [09-02-92107-Phi]
Предметные рубрики: ELECTRONIC-PROPERTIES
BUILDING-BLOCKS
NANOCRYSTALS
Ключевые слова (''Своб.индексиров.''): silicon nanowires--elastic properties--molecular mechanics--tersoff potential--elastic properties--molecular mechanics--silicon nanowires--tersoff potential--atomic structure--branch length--elastic properties--interatomic potential--silicon nanowires--tersoff potential--theoretical study--young modulus--carbon nanotubes--elasticity--molecular mechanics--nanowires--stiffness--crystal atomic structure--nanowire--silicon--article--chemical structure--chemistry--conformation--elasticity--mechanical stress--young modulus--elastic modulus--elasticity--models, molecular--molecular conformation--nanowires--silicon--stress, mechanical
Аннотация: The atomic structure and elastic properties of Y-shaped silicon nanowires of "fork"- and "bough"-types were theoretically studied, and effective Young moduli were calculated using Tersoff interatomic potential. The oscillation of fork Y-type branched nanowires with various branch lengths and diameters was studied. In the final stages of the bending, the formation of new bonds between different parts of the wires was observed. It was found that the stiffness of the nanowires is comparable with the stiffness of Y-shaped carbon nanotubes.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Sorokin P. B. , Chernozatonskii L. A. , Gordon M. S.
Заглавие : Multiterminal nanowire junctions of silicon: A theoretical prediction of atomic structure and electronic properties
Место публикации : Nano Letters: American Chemical Society, 2007. - Т. 7, № 7. - С. 2063-2067. - ISSN 1530-6984, DOI 10.1021/nl070973y. - ISSN 1530-6992(eissn)
ГРНТИ : 34
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gamov, Alexander, Zlotnikov A. O.
Заглавие : Fermion parity of phases supporting multiple Majorana modes in a superconducting nanowire
Колич.характеристики :10 с
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2023. - Vol. 16, Is. 6. - P.820-829. - ISSN 19971397 (ISSN); Журн. СФУ. Матем. и физ. - ISSN 23136022 (eISSN)
Примечания : Cited References: 22. - Gamov A. acknowledges the support of the Theoretical Physics and Mathematics Advancement Foundation "BASIS"
Аннотация: The fermion parity of the ground state is determined in various topological phases of the semiconducting nanowire under external magnetic field with proximity-induced superconductivity and strong spin-orbit interaction. Electron hopping as well as spin-flip hopping due to spin-orbit coupling and superconducting pairings in the second coordination sphere are taken into account. The connection between the fermion parity and the parity of the BDI topological invariant is shown. The formation of topological phases with three and four pairs of Majorana modes has been demonstrated.Для полупроводниковой нанопроволоки, помещенной во внешнее магнитное поле, с наведенной сверхпроводимостью и сильным спин-орбитальным взаимодействием определена фермионная четность основного состояния в различных топологических фазах при учете перескоков электронов, включая перескоки с переворотом спина за счет спин-орбитальной связи, и сверхпроводящих спариваний во второй координационной сфере. Показана связь фермионной четности и четности BDI топологического инварианта. Продемонстрировано формирование топологических фаз с тремя и четырьмя парами майорановских мод.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shustin M. S., Aksenov S. V.
Заглавие : Effect of strong intersite Coulomb interaction on the topological properties of a superconducting nanowire
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 13. - P.2047-2053. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2022.13.53972.23s. - ISSN 10906460 (eISSN)
Примечания : Cited References: 55. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory and the Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243001 and 20-42-243005. M.S.S. thanks the Foundation for the Advancement of Theoretical Physics and Mathematics ”BASIS“. S.V.A. is grateful to the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools, project No. MK-1641.2020.2
Аннотация: For superconducting nanowire with the pairing of extended s-type symmetry, Rashba spin-orbit interaction in a magnetic field, the influence of strong intersite charge correlations on single-particle Majorana excitations is analyzed. This problem is investigated on the basis of the density matrix renormalization group numerical method. It is shown that with an increase in the repulsion intensity of electrons located at the neighboring sites, two subbands emerge in the lower Hubbard band of the open system. Based on calculations of the Majorana polarization and degeneracy of the entanglement spectrum, it was found that a topologically nontrivial phase with one edge state survives at the edge of each of the subbands where the concentration of electrons or holes is minimal.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Ovchinnikov S. G., Avramov P. V., Chernozatonskii L.A., Fedorov D.G.
Заглавие : Atypical quantum confinement effect in silicon nanowires
Место публикации : J. Phys. Chem. A. - WASHINGTON: AMER CHEMICAL SOC, 2008. - Vol. 112, Is. 40. - С. 9955-9964. - OCT 9. - ISSN 1089-5639, DOI 10.1021/jp805069b
Примечания : Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096]
Предметные рубрики: ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
SI
DENSITY
WIRES
EXCHANGE
ATOMS
DOTS
Ключевые слова (''Своб.индексиров.''): electric wire--energy gap--gallium alloys--mathematical models--nanostructured materials--nanostructures--nanowires--quantum confinement--quantum electronics--semiconductor quantum dots--silicon--ami methods--band gaps--blue shifts--dinger equations--linear junctions--monotonic decreases--quantum confinement effects--quantum dots--semiempirical--silicon nanowires--system sizes--theoretical models--nanocrystalline silicon--nanowire--quantum dot--silicon--article--chemistry--electron--quantum theory--electrons--nanowires--quantum dots--quantum theory--silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.
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