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1.


   
    Automated measuring unit for analysis of thin magnetic film ferroresonance spectrum / A. V. Burmitskikh [et al.] // International Siberian Conference on Control and Communications, SIBCON 2019 : Proceedings : IEEE, 2019. - Ст. 8729594, DOI 10.1109/SIBCON.2019.8729594. - Cited References: 6
Кл.слова (ненормированные):
Ferroresonance -- Magnetic films -- Magnetic sensors -- Magnetometers -- Permeability measurement
Аннотация: This paper considers hardware and software for automated analysis of thin magnetic film ferroresonance spectrum to determine the rate of growth and decrease in ferroresonance spectrum (conversion factor parameter). The measuring element of automated system is the strip line which is short-circuited. The measuring unit is used to study Ni 80 Fe 20 permalloy films, with thickness of more than 300 Å. Conversion factor, magnetic permeability μ, uniaxial magnetic anisotropy, ferromagnetic spectrum resonance line width, saturation magnetization are analyzed from 50 MHz to 2 GHz frequency range. The magnetic films are used to design frequency selective filters, phase shifters and weak-field magnetic sensors. The thin magnetic film sensors are high sensitive magnetometers, with wide frequency range, low dimensions and weight [1]. © 2019 IEEE.

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Держатели документа:
Laboratory of Electrodynamics and Microwave Electronics, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Burmitskikh, A. V.; Бурмитских, Антон Владимирович; Boev, N. M.; Боев, Никита Михайлович; Izotov, A. V.; Andyuseva, V. G.; International Siberian Conference on Control and Communications(14 ; 2019 ; April 18-20 ; Tomsk)
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2.


    Chzhan, A. V.
    Deaccommodation of the initial permeability in FeBO3 at low temperatures / A. V. Chzhan // Phys. Solid State. - 2006. - Vol. 48, Is. 9. - P. 1730-1731, DOI 10.1134/S1063783406090198. - Cited References: 4 . - ISSN 1063-7834
РУБ Physics, Condensed Matter

Аннотация: Deaccommodation of the initial permeability mu in the weak ferromagnet FeBO3 is studied experimentally. The temperature dependence of the relaxation time is determined, and the activation energy is found. Based on the results obtained, the conclusion is made that the deaccommodation of mu in iron borate at low temperatures is related to the same carriers that participate in various photoinduced magnetic transformations in this compound.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Чжан, Анатолий Владимирович
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3.


   
    Coupled R and Fe magnetic excitations in RFe 3(BO 3) 4 multiferroics / A. M. Kuzmenko [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 269-272, DOI 10.4028/www.scientific.net/SSP.190.269 . - ISBN 9783037854365
Кл.слова (ненормированные):
Magnetic resonance -- Rare-earth iron borates -- Terahertz spectroscopy -- Antiferromagnetics -- Coupled mode -- Exchange coupled -- Frequency ranges -- G factors -- Iron borate -- Magnetic excitations -- Multiferroics -- Resonance mode -- Strong interaction -- Transmission spectrums -- Antiferromagnetism -- Electron transitions -- Gadolinium -- Ions -- Magnetic materials -- Magnetic permeability -- Magnetic resonance -- Terahertz spectroscopy -- Neodymium
Аннотация: Various resonance modes were observed in the transmission spectra of rare-earth iron borates RFe 3(BO 3) 4 (R = Nd 3+, Sm 3+, Gd 3+) at the frequency range 100-600 GHz, which were attributed to collective magnetic excitations in the exchange coupled Fe- and R-subsystems, i.e. antiferromagnetic (Fe) resonance and electron transitions in the R-ions. Strong interaction of the Fe and R oscillations was revealed and theoretically analyzed taking into account feature of the R-ion ground state. Intensities of the coupled modes (contributions to magnetic permeability) strongly depend on a difference of Fe and R ions g-factors that allows defining the sign of the latter. In particular, an appreciable intensity of exchange (Nd) modes in NdFe 3(BO 3) 4 is caused by g Nd?,|| < 0 whereas in GdFe 3(BO 3) 4 with gGd ? gFe ? 2 the exchange (Gd) modes were hided due to compensation of Fe and Gd contributions. In SmFe 3(BO 3) 4, despite a negligible Sm g-factor, the Sm modes were clear observed due to their excitation via coupling with the Fe-subsystem. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Kuzmenko, A. M.; Кузьменко А.М.; Mukhin, A. A.; Ivanov, V.Yu.; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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4.


   
    Effect of Mn doping on magnetic and dielectric properties of Bi2Sn2O7 / L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 105-108, DOI 10.4028/www.scientific.net/SSP.233-234.105 . - ISSN 1662-9779. - ISSN 978-3-038
Рубрики:
Achievements in magnetism
Кл.слова (ненормированные):
crystallographic structure -- cubic phase -- dielectric permeability -- electrical resistivity -- magnetic moment -- martensitic phase transitions -- orthorhombic phases -- polymorphic transformation
Аннотация: The Bi2(Sn0.95Mn0.05)2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic has been synthesized for the first time by solid-phase synthesis. The magnetic, dielectric and electrical properties of the compound have been studied. Anomalies in the temperature dependences of the electrical resistance and magnetic propoties have been found. These features are explained as martensitic phase transitions.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Eremin, E. V.; Еремин, Евгений Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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5.


   
    Effects of static electric field and of mechanical pressure on surface acoustic waves propagation in La3Ga5SiO14 piezoelectric single crystals / K. S. Aleksandrov [et al.] // Proc IEEE Ultrason Symp. - 1995. - Vol. 1. - P. 409-412 . - ISBN 1051-0117
Кл.слова (ненормированные):
Electric field effects -- Electrostriction -- Lanthanum compounds -- Piezoelectric materials -- Piezoelectricity -- Pressure effects -- Quartz -- Single crystals -- Tensors -- Bulk acoustic wave -- Dielectric permeability -- Electromechanical bond coefficients -- Lanthanum gallium silicide -- Mechanical pressure -- Nonlinear electromechanical properties -- Nonlinear piezoelectric effect -- Piezoquartz -- Static electric field -- Tensorial components -- Ultrasonic propagation
Аннотация: The complete set of tensorial components of linear and nonlinear electromechanical properties for La3Ga5SiO14 piezoelectric crystals have been obtained. These data were used for the analysis of influence of static electrical field and of uniaxial homogeneous mechanical pressure on the propagation of surface acoustic waves.

Scopus

Доп.точки доступа:
Aleksandrov, K. S.; Александров, Кирилл Сергеевич; Sorokin, B. P.; Turchin, P. P.; Burkov, S. I.; Glushkov, D. A.; Karpovich, A. A.; IEEE International Ultrasonics Symposium(1995 ; Nov. ; 7-10 ; Seattle, USA)
}
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6.


   
    Electrical and dielectrical propeties of gas-sensor resistive type Bi2Sn2O7 / L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 503-506, DOI 10.4028/www.scientific.net/SSP.215.503. - Cited References: 14. - This work was supported by the Russian Foundation for Basic Research projects no. 12-02-00125-а . - ISSN 978-30383. - ISSN 1662-9779
   Перевод заглавия: Электрические и диэлектрические свойства резистивного типа газовых сенсоров на основе Bi2Sn2O7
Кл.слова (ненормированные):
crystallographic structure -- polymorphic transformations -- electrical resistivity -- dielectric permeability
Аннотация: Polycrystalline samples of Bi2Sn2O7 have been synthesized by conventional solid-state reaction method. According to the X-ray powder diffraction research, our sample co-existing of two polymorphs phases: cubic and rhombic, concurrently. The real dielectric permeability Re (ε) monotonic grows versus temperature and the imaginary dielectric permeability Im (ε) nonmonotonic is increased at the heating. There are maxima at Т=450 K on both temperature dependences Im (ε) and Re (ε) reveal. Anomalies in the temperature dependence of electrical resistivity at temperatures are found and to be correlated with the α → β structural phase transition temperature.

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Sitnicov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
}
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7.


   
    High strength ceramic substrates based on perlite and foam silicates for filtration membranes / N. P. Fadeeva, M. V. Pavlov, I. A. Kharchenko [et al.] // Membr. Membr. Technol. - 2022. - Vol. 4, Is. 3. - P. 170-176, DOI 10.1134/S2517751622030040. - Cited References: 32. - The work was performed using the equipment of the Krasnoyarsk Regional Center for Collective Use of the Federal Research Center, Krasnoyarsk Science Center, Siberian Branch, Russian Academy of Sciences. This work was partially supported by the Russian Foundation for Basic Research, grant no. 18-29-19078 . - ISSN 2517-7516
Кл.слова (ненормированные):
perlite -- foam silicate -- ceramic membranes -- substrates -- water permeability
Аннотация: Samples of two-layer ceramics based on polydisperse powder of the pearlite mineral and foam silicates possessing high compressive strength up to 50 MPa, thermal stability up to 1150°C, and water permeability of 272 m3/h m2 bar have been obtained. According to the X-ray powder diffraction analysis, the supporting substrate material is X-ray amorphous. The average pore size of the supporting substrate is 40 µm, while the average pore size of the modifying layer is 17 µm according to the bubble method and electron microscopy. The obtained materials are promising for use as substrates of microfiltration, ultrafiltration, and nanofiltration membranes.

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Публикация на русском языке Высокопрочные керамические подложки на основе перлита и пеносиликатов для фильтрационных мембран [Текст] / Н. П. Фадеева, М. В. Павлов, И. А. Харченко [и др.] // Мембраны и мембран. технол. - 2022. - Т. 12 № 3. - С. 192-199

Держатели документа:
Institute of Computational Modeling, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Specialized Design and Technological Bureau “Nauka” FRC KSC SB RAS, 50/45 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Federal Research Center, Krasnoyarsk Science Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Fadeeva, N. P.; Pavlov, M. V.; Kharchenko, I. A.; Харченко, Иван Александрович; Simunin, M. M.; Shabanova, K. A.; Шабанова, К. А.; Pavlov, V. F.; Ryzhkov, I. I.
}
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8.


   
    Influence of the Magnetic Field on Transprt Properties of Holmium-Manganese Sulfide / M. N. Sitnikov, A. M. Kharkov, S. S. Aplesnin, O. B. Romanova // Sib. J. Sci. Technol. - 2020. - Vol. 21, Is. 3. - P. 451-458 ; Сибирский журнал науки и технологий, DOI 10.31772/2587-6066-2020-21-3-451-458. - Cited References: 33. - The work was supported by the Siberian State University youth grant, SibGU, 2020 . - ISSN 2587-6066
   Перевод заглавия: Влияние магнитного поля на транспортные свойства гольмий-марганцевого сульфида
Кл.слова (ненормированные):
solid solutions -- resistance -- magnetic permeability -- the effect of giant magnetoresistance -- твердые растворы -- электросопротивление -- магнитная проницаемость -- эффект гигантского магнитосопротивления
Аннотация: Holmium-manganese silfide with giant magnetoresistance refers to new magnetic sulfide compounds of holmium and manganese that have the effect of giant magnetoresistance (i. e., with special magnetoelectric properties), which can be used as components of sensor technology, magnetic memory, and spintronics. The technology of manufacturing polycrustals HoxMn1-xS grown by crystallization from the melt of the obtained powdered sulfides with a putity not lower then 99,9%, in glass-carbon crucibles and a quartz reactor in an argon atmosphere is presented. According to the results of x-ray diffracton analysis, HoxMn1-xS holmium-manganese sulfides have a HCC structure of the NaCl type. As the degree of cationic substitution increases, the unit cell parameter increases linearly with the concentration. No concomitant impurity phases are detected in the synthesized samples. Tj determine the state of the spin glass, mahnetic moment measurements are conducted at several frequencies ω = 1 KHz, 10 KHz and 100 kHz. The dependence of magnetic characteristics on the frequency of measurements is found. The damping of the magnetic moment and its increase with a decrease in temperature is reviled, which is connected with the formation of metastable states. Measurements of electrical resistance without a field and in a magnetic field are conducted. Anomalies in the remperature dependence of the conductivity are found. A change in the magnetoresistance sign is detected with the increase of temperature below and above room temperature.
Гольмий-марганцевый сульфид с гигантским магнитосопротивлением относится к новым магнитным сульфидным соеднениям гольмия и марганца, обладающим эффектом гигантского магнитоспопротивления, то есть с особыми магнитоэлектрическими свойствами, которые могут быть использованы в качестве составляющих компонент сенсорной техники, магнитной памяти для спинтроники. Приведена технология изготовления поликристаллов HoxMn1-xS, выращенных кристаллизацией из расплава полученных порошковых сульфидов чистотой не ниже 99,9% в стеклоуглеродных тиглях и кварцевом реакторе в атмосфере аргона. Согласно результатам рентгеноструктурного анализа, гольмий-марганцевые сульфиды HoxMn1-xS имеют ГЦК структуру типа NACl. С увеличением степени катионного замещения параметр элементарной ячейки линейно увеличивается с концентрацией. Сопутствующих примесных фаз в синтезированных образцах не обнаружено. Для установления состояния спинового стекла проуедены измерения магнитного момента на нескольких частотах ω = 1, 10 и 100 KHz. Обнаружена зависимость характеристик от частоты измерений. Найдено затухание магнитного момента и его увеличение с понижением температуры, что связывается с образованием метастабильных состояний. Проведены измерения электросопротивления без поля и в магнитном поле. Найдены аномалии в температурной зависимости проводимости. Обнаружена смена знака магнитосопротивления с ростом температуры ниже и выше комнатной температуры.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, 31, Krasnoyarskii rabochii prospect, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Federal Researh Center KSC SB RAS, 50-38, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Sitnikov, M. N.; Kharkov, A. M.; Aplesnin, S. S.; Romanova, O. B.; Романова, Оксана Борисовна

}
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9.


   
    Magnetoelectric and magnetoresistive properties of the CexMn1-xS semiconductors / S. S. Aplesnin [et al.] // Phys. Status Solidi B. - 2016. - Vol. 253, Is. 9. - P. 1771-1781, DOI 10.1002/pssb.201600134. - Cited References:24. - This work was financially supported by RFFI no. 15-42-04099 r_sibir_a, RFFI no. 16-52-00045 Bel_a, and government work no. 114090470016. . - ISSN 0370-1972. - ISSN 1521-3951
   Перевод заглавия: Магнитоэлектрические и магнеторезистивные свойства полупроводников CexMn1-xS
РУБ Physics, Condensed Matter
Рубрики:
X MN1-X S
   ALPHA-MNS

   GD

Кл.слова (ненормированные):
dielectric permeability -- Hall effect -- magnetoelectric properties -- magnetoresistive properties -- semiconductors
Аннотация: The effect of electron doping on the magnetoelectric and magnetoresistivity properties of cation-substituted antiferromagnetic CexMn1-xS (x ≤ 0.05) semiconductors at temperatures of 77-500 K in magnetic fields of up to 10 kOe was investigated. For all the compositions shifts of the temperature of the dielectric loss maximum toward higher temperature (80-500 K) with increasing magnetic field up to 10 kOe are found. The current dependence of magnetoresistance from the I-V characteristic measured in a magnetic field was established. The increase of the magnetoresistive effect with increase of the cerium ions concentration in the CexMn1-xS is found. The type of current carriers was determined on the basis of the Hall coefficient measurement. For explanation of experimental data the model of charge-orbital ordering, including orbital glass is used.

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Держатели документа:
RAS, Kirensky Inst Phys, SB, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian State Aerosp Univ MF Reshetnev, Krasnoyarsky Rabochy Ave 31, Krasnoyarsk 660014, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Acad Lavrenntiev Ave 3, Novosibirsk 630090, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Romanova, O. B.; Романова, Оксана Борисовна; Pichugin, A. Yu.; RFFI [15-42-04099 r_sibir_a, 16-52-00045 Bel_a]; [114090470016]
}
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10.


   
    Measuring the imaginary part of the complex magnetic permeability of thin films using resonant and non-resonant automated measuring systems / A. V. Burmitskikh, B. A. Belyaev, N. M. Boev, S. A. Kleshnina // Proceedings - 2020 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2020 : Institute of Electrical and Electronics Engineers, 2020. - Ст. 9117770. - P. 265-268, DOI 10.1109/USBEREIT48449.2020.9117770. - Cited References: 14. - The reported study was funded by RFBR, project number 19-32-90066\19
Кл.слова (ненормированные):
thin magnetic films -- magnetic permeability -- ferromagnetic resonance
Аннотация: This paper considers resonant and non-resonant methods for measuring magnetic characteristics of Ni 80 Fe 20 thin films with 1000 Å thickness. The imaginary part of complex magnetic permeability was measured by using resonant and nonresonant measuring cells. The resonant measuring cell included: a micro-strip line, a lumped capacitance, and an amplitude detector. The non-resonant measuring cell included a short-circuited micro-strip line. The studied sample of thin magnetic film is placed under the short-circuited micro-strip line. The self-resonant frequency of the non-resonant measuring cell is higher than frequency of the ferromagnetic resonance (in field, equal 14 Oersteds). Ferromagnetic resonance method was used to study the change of measuring cell resonant frequency. The angular dependences of resonant frequency were achieved by the change of angle between constant magnetic field and high-frequency field of excitation, the hard axis of magnetization in thin magnetic film. The measurements were carried out using automation units. A numerical comparison of the obtained results showed that the difference between measurements does not exceed 5%.

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Держатели документа:
Laboratory of Electrodynamics and Microwave Electronics, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Burmitskikh, A. V.; Бурмитских, Антон Владимирович; Belyaev, B. A.; Беляев, Борис Афанасьевич; Boev, N. M.; Боев, Никита Михайлович; Kleshnina, S. A.; Клешнина, Софья Андреевна; Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology(2020 ;14-15 May ; Yekaterinburg, Russia)
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