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Drokin, N. A.
Static and dynamic characteristics of the bulk and contact electric resistivity in CDCR2SE4 under stochastic current instability / N. A. Drokin, S. M. Ganiev // Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 7. - P. 2122-2128. - Cited References: 21 . - ISSN 0367-3294

РУБ Physics, Condensed Matter
Рубрики:
OSCILLATIONS
CHAOS
GE

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Доп.точки доступа:
Ganiev, S. M.; Дрокин, Николай Александрович
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Study of electroconductivity in cobalt nanocrystalline films / G. I. Frolov [и др.] // Fiz. Tverd. Tela. - 1996. - Vol. 38, Is. 4. - P. 1208-1213. - Cited References: 13 . - ISSN 0367-3294

РУБ Physics, Condensed Matter
Рубрики:
METAL-FILMS
   RESISTIVITY
   CONDUCTION
   ELECTRONS
   DENSITY

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Доп.точки доступа:
Frolov, G. I.; Zhigalov, V. S.; Polskii, A. I.; Pozdnyakov, V. G.
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Gavrichkov, V. A.
An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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Gavrichkov, V. A.
Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS
   HGCR2SE4
   RESISTIVITY
   FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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Erkaev, N. V.
Reconnection rate for the inhomogeneous resistivity Petschek model / N. V. Erkaev, V. S. Semenov, F. . Jamitzky // Phys. Rev. Lett. - 2000. - Vol. 84, Is. 7. - P. 1455-1458, DOI 10.1103/PhysRevLett.84.1455. - Cited References: 16 . - ISSN 0031-9007

РУБ Physics, Multidisciplinary
Рубрики:
MAGNETIC RECONNECTION
CURRENT SHEETS
Аннотация: The reconnection rate for the canonical simplest case of steady-state two-dimensional symmetric reconnection in an incompressible plasma is found by matching of an outer Petschek solution and an internal diffusion region solution. The reconnection rate obtained naturally incorporates both Sweet-Parker and Petschek regimes; while the latter is possible only for a strongly localized resistivity.

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Держатели документа:
Russian Acad Sci, Inst Computat Modelling, Krasnoyarsk 660036, Russia
St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia
Max Planck Inst Extraterr Phys, D-85740 Garching, Germany
ИВМ СО РАН

Доп.точки доступа:
Semenov, V. S.; Jamitzky, F.; Еркаев, Николай Васильевич
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Zakharov, Y. V.
Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal / Y. V. Zakharov, L. S. Titov // Phys. Solid State. - 2004. - Vol. 46, Is. 2. - P. 303-305, DOI 10.1134/1.1649428. - Cited References: 9 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
RESISTIVITY
WALLS
Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660062, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Krasnoyarsk State University, Svobodnyi pr. 79, Krasnoyarsk 660062, Russian Federation

Доп.точки доступа:
Titov, L. S.
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Influence of magnetic ordering on the resistivity anisotropy of alpha-MnS single crystal / S. S. Aplesnin [et al.] // Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197 ; Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197, DOI 10.1016/j.ssc.2003.09.028. - Cited References: 7 . - ISSN 0038-1098. - Вариант Sopus

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
anisotropy of resistivity -- optical gap -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds
Аннотация: The resistivity and the optical absorbtion spectra of single crystal alpha-MnS are studied in the temperature range 80-300 K along two directions [100] and [111]. Strong anisotropy of the resistivity, and the shift of absorbtion spectra band edge below T < 160 K are explained in terms of model involving delocalized holes in 3d-band manganese ions interacting with localized spins by using the sd-model. (C) 2003 Elsevier Ltd. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Kiselev, N. I.; Romanova, O. B.; Романова, Оксана Борисовна

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Mossbauer magnetization and resistivity studies of Fe1.91V0.09BO4 / N. V. Kazak [et al.] // Physica B. - 2005. - Vol. 359: International Conference on Strongly Correlated Electron Systems (SCES 04) (JUL 26-30, 2004, Karlsruhe, GERMANY). - P. 1324-1326, DOI 10.1016/j.physb.2005.01.396. - Cited References: 8 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
FE2OBO3
Кл.слова (ненормированные):
Mott-hubbard system -- magnetism -- new materials -- Magnetism -- Mott-hubbard system -- New materials -- Crystallization -- Crystallography -- Fermi level -- Ferrimagnetism -- Magnetism -- Magnetization -- Mossbauer spectroscopy -- Phase transitions -- Single crystals -- X ray diffraction analysis -- Charge ordering -- Electron-electron interactions -- Mott-hubbard system -- New materials -- Iron compounds
Аннотация: Single crystals of Fe1.91V0.09BO4 were prepared by spontaneous crystallization using a solution melt technology for the first time and its structure, electronic and magnetic properties were investigated by X-ray diffraction, Mossbauer spectroscopy, magnetization and electrical measurements. Room-temperature Mossbauer measurements indicate that "localized" (Fe2+, Fe3+) and "delocalized" (Fe2.5+) states in ratio 0.31:0.345:0.345 distributed over two crystallographically non-equivalent positions exist. The results of magnetic measurements show that warwickite is a P-type ferrimagnet below T = 130 K. Resistivity measurements show a variable-range-hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. (c) 2005 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
ИФ СО РАН
LV Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russian Federation
Krasnoyarsk State Tech. University, 660074 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Balaev, A. D.; Балаев, Александр Дмитриевич; Ivanova, N. B.; Иванова, Наталья Борисовна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Hysteretic behavior of the magnetoresistance and the critical current of bulk Y3/4Lu1/4Ba2CU3O7+CuOcomposites in a magnetic field / D. A. Balaev [et al.] // Physica C. - 2007. - Vol. 460: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (JUL 09-14, 2006, Dresden, GERMANY). - P. 1307-1308, DOI 10.1016/j.physc.2007.03.346. - Cited References: 7 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
SUPERCONDUCTORS
Кл.слова (ненормированные):
HTSC -- resistivity -- magnetic field -- relaxation -- HTSC -- Magnetic field -- Relaxation -- Resistivity -- Crystallites -- Magnetic fields -- Magnetic hysteresis -- Magnetoresistance -- Yttrium barium copper oxides -- Superconducting crystallites -- Superconducting systems -- Tunnel-type Josephson junctions -- Josephson junction devices
Аннотация: The hysteretic behavior of critical current j(C)(H) and magneto-resistance R(H) of composites Y-Ba-Cu-O + CuO have been studied and presented. The composites represent the network of tunnel-type Josephson junctions where copper oxide acts as a material forming barriers between superconducting (YBCO) crystallites. The characteristic features of R(H) and j(C)(H) dependences are discussed in the frames of the conception of "two level superconducting system" (the Josephson media and HTSC crystallites) which is realized in the composites under study. (c) 2007 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Popkov, S. I.; Попков, Сергей Иванович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
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10.

Conductivity study of Co3O2BO3 and Co 3-xFexO2BO3 oxyborates / N. V. Kazak [et al.] // Solid State Phenomena. - 2009. - Vol. 152-153. - P104-107, DOI 10.4028/www.scientific.net/SSP.152-153.104 . - ISSN 1012-0394
Кл.слова (ненормированные):
Doped cobaltite -- Electrical conductivity -- Ludwigite -- Variable-range hopping -- Crystal structure -- Electric conductivity -- Magnetic materials -- Single crystals -- Crystal structure -- Electric conductivity -- Magnetic materials -- Magnetism -- Single crystals -- Electrical conductivity -- Electrical resistivity -- Experimental data -- Mott variable-range hopping -- Oxyborates -- Temperature regions -- Variable-range hopping -- Doped cobaltite -- Ludwigite -- Variable range hopping -- Cobalt -- Cobalt
Аннотация: Single crystals of cobalt oxyborates Co3O2BO 3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O 2BO3 Mott's variable-range hopping conductivity clearly dominates.

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Держатели документа:
L.V. Kirensky Institute of Physics, SB of RAS, 660036, Akademgorodok, Krasnoyarsk, Russian Federation
Politechnical Institute, Siberian Federal University, Kirensky str. 26, 660074 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Ivanova, N. B.; Иванова, Наталья Борисовна; Rudenko, V. V.; Руденко, Валерий Васильевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Vasil'Ev, A. D.; Васильев, Александр Дмитриевич; Knyazev, Yu. V.; Князев, Юрий Владимирович; Moscow International Symposium on Magnetism(4 ; 2008 ; Jun. ; Moscow)
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