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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Ganiev S. M.
Заглавие : Static and dynamic characteristics of the bulk and contact electric resistivity in CDCR2SE4 under stochastic current instability
Место публикации : Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 7. - P.2122-2128. - ISSN 0367-3294
Примечания : Cited References: 21
Предметные рубрики: OSCILLATIONS
CHAOS
GE
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Frolov G. I., Zhigalov V. S., Polskii A. I., Pozdnyakov V. G.
Заглавие : Study of electroconductivity in cobalt nanocrystalline films
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1996. - Vol. 38, Is. 4. - P1208-1213. - ISSN 0367-3294
Примечания : Cited References: 13
Предметные рубрики: METAL-FILMS
RESISTIVITY
CONDUCTION
ELECTRONS
DENSITY
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : An impurity resistivity of doped manganese perovskites
Место публикации : Physica B: ELSEVIER SCIENCE BV, 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P828-830. - ISSN 0921-4526, DOI 10.1016/S0921-4526(98)00875-8
Примечания : Cited References: 4
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): manganese perovskites--mobility--linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H--0) = 0 for T T(c) to linear dR/dH\(H--0) for T T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density
Место публикации : Phys. Solid State: AMER INST PHYSICS, 1999. - Vol. 41, Is. 1. - P59-66. - ISSN 1063-7834, DOI 10.1134/1.1130731
Примечания : Cited References: 26
Предметные рубрики: QUANTUM TEMPERATURE OSCILLATIONS
MAGNETIC SEMICONDUCTORS
HGCR2SE4
RESISTIVITY
FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Erkaev N. V., Semenov V. S., Jamitzky F.
Заглавие : Reconnection rate for the inhomogeneous resistivity Petschek model
Место публикации : Phys. Rev. Lett.: AMERICAN PHYSICAL SOC, 2000. - Vol. 84, Is. 7. - P1455-1458. - ISSN 0031-9007, DOI 10.1103/PhysRevLett.84.1455
Примечания : Cited References: 16
Предметные рубрики: MAGNETIC RECONNECTION
CURRENT SHEETS
Аннотация: The reconnection rate for the canonical simplest case of steady-state two-dimensional symmetric reconnection in an incompressible plasma is found by matching of an outer Petschek solution and an internal diffusion region solution. The reconnection rate obtained naturally incorporates both Sweet-Parker and Petschek regimes; while the latter is possible only for a strongly localized resistivity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Y. V., Titov L. S.
Заглавие : Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal
Разночтения заглавия :авие SCOPUS: Negative Magnetoresistance of Iron Single-Crystal Whiskers in the Course of Magnetization Reversal
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 2. - P303-305. - ISSN 1063-7834, DOI 10.1134/1.1649428
Примечания : Cited References: 9
Предметные рубрики: RESISTIVITY
WALLS
Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Petrakovskii G. A., Ryabinkina L. I., Abramova G. M., Kiselev N. I., Romanova O. B.
Заглавие : Influence of magnetic ordering on the resistivity anisotropy of alpha-MnS single crystal
Разночтения заглавия :авие SCOPUS: Influence of magnetic ordering on the resistivity anisotropy of α-MnS single crystal; авие SCOPUS: Influence of magnetic ordering on the resistivity anisotropy of ?-MnS single crystal
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2004. - Vol. 129, Is. 3. - P195-197. - ISSN 0038-1098, DOI 10.1016/j.ssc.2003.09.028; Solid State Commun. - 2004. - Vol. 129, Is. 3. - P195-197. - Вариант Sopus
Примечания : Cited References: 7
Ключевые слова (''Своб.индексиров.''): anisotropy of resistivity--optical gap--d. anisotropy of resistivity--d. optical gap--antiferromagnetism--band structure--bandwidth--diffractometers--electron transitions--fermi level--hamiltonians--light absorption--magnetic anisotropy--magnetization--single crystals--spectroscopic analysis--x ray diffraction analysis--coulomb repulsion--resistivity anisotropy--semiconducting manganese compounds--d. anisotropy of resistivity--d. optical gap--antiferromagnetism--band structure--bandwidth--diffractometers--electron transitions--fermi level--hamiltonians--light absorption--magnetic anisotropy--magnetization--single crystals--spectroscopic analysis--x ray diffraction analysis--coulomb repulsion--resistivity anisotropy--semiconducting manganese compounds
Аннотация: The resistivity and the optical absorbtion spectra of single crystal alpha-MnS are studied in the temperature range 80-300 K along two directions [100] and [111]. Strong anisotropy of the resistivity, and the shift of absorbtion spectra band edge below T 160 K are explained in terms of model involving delocalized holes in 3d-band manganese ions interacting with localized spins by using the sd-model. (C) 2003 Elsevier Ltd. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kazak N. V., Balaev A. D., Ivanova N. B., Ovchinnikov S. G.
Заглавие : Mossbauer magnetization and resistivity studies of Fe1.91V0.09BO4
Разночтения заглавия :авие SCOPUS: Mossbauer magnetization and resistivity studies of Fe1.91V 0.09BO4
Место публикации : Physica B: ELSEVIER SCIENCE BV, 2005. - Vol. 359: International Conference on Strongly Correlated Electron Systems (SCES 04) (JUL 26-30, 2004, Karlsruhe, GERMANY). - P1324-1326. - ISSN 0921-4526, DOI 10.1016/j.physb.2005.01.396
Примечания : Cited References: 8
Предметные рубрики: FE2OBO3
Ключевые слова (''Своб.индексиров.''): mott-hubbard system--magnetism--new materials--magnetism--mott-hubbard system--new materials--crystallization--crystallography--fermi level--ferrimagnetism--magnetism--magnetization--mossbauer spectroscopy--phase transitions--single crystals--x ray diffraction analysis--charge ordering--electron-electron interactions--mott-hubbard system--new materials--iron compounds
Аннотация: Single crystals of Fe1.91V0.09BO4 were prepared by spontaneous crystallization using a solution melt technology for the first time and its structure, electronic and magnetic properties were investigated by X-ray diffraction, Mossbauer spectroscopy, magnetization and electrical measurements. Room-temperature Mossbauer measurements indicate that "localized" (Fe2+, Fe3+) and "delocalized" (Fe2.5+) states in ratio 0.31:0.345:0.345 distributed over two crystallographically non-equivalent positions exist. The results of magnetic measurements show that warwickite is a P-type ferrimagnet below T = 130 K. Resistivity measurements show a variable-range-hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. (c) 2005 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Gokhfeld D. M., Popkov S. I., Shaykhutdinov K. A., Petrov M. I.
Заглавие : Hysteretic behavior of the magnetoresistance and the critical current of bulk Y3/4Lu1/4Ba2CU3O7+CuOcomposites in a magnetic field
Разночтения заглавия :авие SCOPUS: Hysteretic behavior of the magnetoresistance and the critical current of bulk Y3/4Lu1/4Ba2Cu3O7 + CuO composites in a magnetic field
Место публикации : Physica C: ELSEVIER SCIENCE BV, 2007. - Vol. 460: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (JUL 09-14, 2006, Dresden, GERMANY). - P1307-1308. - ISSN 0921-4534, DOI 10.1016/j.physc.2007.03.346
Примечания : Cited References: 7
Предметные рубрики: SUPERCONDUCTORS
Ключевые слова (''Своб.индексиров.''): htsc--resistivity--magnetic field--relaxation--htsc--magnetic field--relaxation--resistivity--crystallites--magnetic fields--magnetic hysteresis--magnetoresistance--yttrium barium copper oxides--superconducting crystallites--superconducting systems--tunnel-type josephson junctions--josephson junction devices
Аннотация: The hysteretic behavior of critical current j(C)(H) and magneto-resistance R(H) of composites Y-Ba-Cu-O + CuO have been studied and presented. The composites represent the network of tunnel-type Josephson junctions where copper oxide acts as a material forming barriers between superconducting (YBCO) crystallites. The characteristic features of R(H) and j(C)(H) dependences are discussed in the frames of the conception of "two level superconducting system" (the Josephson media and HTSC crystallites) which is realized in the composites under study. (c) 2007 Elsevier B.V. All rights reserved.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kazak N. V., Ivanova N. B., Rudenko V. V., Ovchinnikov S. G., Vasil'Ev A. D., Knyazev Yu. V.
Заглавие : Conductivity study of Co3O2BO3 and Co 3-xFexO2BO3 oxyborates
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena. - 2009. - Vol. 152-153. - С. 104-107. - ISSN 10120394 (ISSN); 390845168X (ISBN); 9783908451686 (ISBN), DOI 10.4028/www.scientific.net/SSP.152-153.104
Ключевые слова (''Своб.индексиров.''): doped cobaltite--electrical conductivity--ludwigite--variable-range hopping--crystal structure--electric conductivity--magnetic materials--single crystals--crystal structure--electric conductivity--magnetic materials--magnetism--single crystals--electrical conductivity--electrical resistivity--experimental data--mott variable-range hopping--oxyborates--temperature regions--variable-range hopping--doped cobaltite--ludwigite--variable range hopping--cobalt--cobalt
Аннотация: Single crystals of cobalt oxyborates Co3O2BO 3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O 2BO3 Mott's variable-range hopping conductivity clearly dominates.
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