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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Altunin R. R., Zharkov S. M.
Заглавие : In situ electron diffraction and resistivity characterization of solid state reaction process in Cu/Al bilayer thin films
Место публикации : Metall. Mat. Trans. A. - 2020. - Vol. 51, Is. 3. - P.1428-1436. - ISSN 10735623 (ISSN), DOI 10.1007/s11661-019-05602-5
Примечания : Cited References: 52. - The authors wish to thank the financial support from the Russian Science Foundation (Grant #18-13-00080)
Аннотация: Solid state reaction processes in Cu/Al thin films have been studied using the methods of in situ electron diffraction and electrical resistivity measurements. The solid state reaction in the Cu/Al thin films has been found to begin already at 88 °C with the formation of the Al2Cu phase in the process of thermal heating in vacuum. The phase sequence at the solid state reaction in the films under study has been determined to be the following: Al2Cu → AlCu → Al4Cu9. A model has been suggested for describing the initial formation stage of intermetallic compounds at the solid state reaction in Cu/Al thin films. According to this model, at the initial stage, the intermetallic compounds are formed as separate crystallites at the interface in the Cu/Al thin films. The suggested model can be applied both to the formation of the first phase, Al2Cu, and to the subsequent phases: AlCu and Al4Cu9. For the Al4Cu9 phase the temperature coefficient of the electrical resistivity has been determined to be equal to αAl4Cu9= 1.1 × 10−3 K−1.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Udod L. V., Sitnikov M. N., Kretinin V. V., Yanushkevich K. I., Velikanov D. A.
Заглавие : Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides
Коллективы : Russian Foundation for Basic Research [18-52-00009 Bel_a]; Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-240001 r_a]
Место публикации : J. Appl. Phys. - 2019. - Vol. 125, Is. 17. - Ст.175706. - ISSN 0021-8979, DOI 10.1063/1.5085701. - ISSN 1089-7550(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research (Project No. 18-52-00009 Bel_a). The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Project No. 18-42-240001 r_a), to the research project: "Inversion of the Sign of the Components of the Magnetoelectric Tensor on the Temperature in Films of Bismuth Garnet Ferrite Replaced by Neodymium." This study was carried out in the framework of the state task No. 3.5743.2017/6.7.
Предметные рубрики: MAGNETIC-PROPERTIES
RESISTIVITY
Аннотация: New multifunction materials in the AgXMn1‒XS (Х = 0.05) system have been synthesized and investigated in the temperature range of 77‒500 K in magnetic fields up to 12 kOe. Near the temperature of the magnetic transition (ТN = 176 K), the anomalous behavior of the temperature dependence of magnetization has been observed and has been attributed to the formation of ferrons. An analysis of the infrared spectroscopy data and I‒V characteristics has revealed the spin-polaron subband splitting. Several conductivity channels have been found from the impedance spectra. The temperature and magnetic field dependences of the carrier relaxation time have been obtained. The magnetoresistance (−21%), magnetoimpedance (−65%), magnetothermopower (−40%), and photoconductivity effects have been detected. The majority carrier type, density, and mobility have been determined from the Hall-effect measurement data. The observed effects have been explained using a ferron model.Синтезированы и исследованы новые многофункциональные материалы системы AgXMn1-XS (Х=0.05) в интервале температур 77-500К в магнитных полях до 12 кЭ. В близи температуры магнитного перехода (ТN=176К) наблюдается аномальное поведение температурной зависимости намагниченности, вызванное образованием ферронов. Найдено расщепление спин-поляронной подзоны из ИК спектроскопии и вольт-амперных характеристик. Установлено несколько каналов проводимости из спектров импеданса, отличающихся частоте. Определена зависимость времени релаксации носителей заряда от температуры и магнитного поля. Обнаружено четыре эффекта: магнитосопротивление (-21%), магнитоимпеданс (-65%), магнитотермоЭДС (-40%) и фотопроводимость. Найдены: тип, концентрация и подвижность основных носителей заряда из холловских измерений. Обнаруженные эффекты объясняются в модели ферронов.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pazniak H., Stevens M., Dahlqvist M., Zingsem B., Kibkalo L., Felek M., Varnakov S. N., Farle M., Rosen J., Wiedwald U.
Заглавие : Phase stability of nanolaminated epitaxial (Cr1-xFex)2AlC MAX phase thin films on MgO(111) and Al2O3(0001) for use as conductive coatings
Место публикации : ACS Appl. Nano Mat. - 2021. - Vol. 4, Is. 12. - P.13761-13770. - ISSN 25740970 (ISSN), DOI 10.1021/acsanm.1c03166
Примечания : Cited References: 51. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within CRC/TRR 270, project B02 (Project-ID 405553726). The calculations were carried out using supercomputer resources provided by the Swedish National Infrastructure for Computing (SNIC) at the National Supercomputer Centre (NSC) and the High Performance Computing Center North (HPC2N) partially funded by the Swedish Research Council through grant agreement no. 2018-05973. J.R. acknowledges funding from the Knut and Alice Wallenberg Foundation. Support by the Interdisciplinary Center for Analytics on the Nanoscale (ICAN) of the University of Duisburg-Essen (DFG RIsources reference: RI_00313), a DFG-funded core facility (Project nos. 233512597 and 324659309), is gratefully acknowledged. M.F. acknowledges co-funding by the government of the Russian Federation (agreement no. 075-15-2019-1886)
Аннотация: In this study, we model the chemical stability in the (Cr1-xFex)2AlC MAX phase system using density functional theory, predicting its phase stability for 0 ‹ x ‹ 0.2. Following the calculations, we have successfully synthesized nanolaminated (Cr1-xFex)2AlC MAX phase thin films with target Fe contents of x = 0.1 and x = 0.2 by pulsed laser deposition using elemental targets on MgO(111) and Al2O3(0001) substrates at 600 °C. Structural investigations by X-ray diffraction and transmission electron microscopy reveal MAX phase epitaxial films on both substrates with a coexisting (Fe,Cr)5Al8 intermetallic secondary phase. Experiments suggest an actual maximum Fe solubility of 3.4 at %, corresponding to (Cr0.932Fe0.068)2AlC, which is the highest Fe doping level achieved so far in volume materials and thin films. Residual Fe is continuously distributed in the (Fe,Cr)5Al8 intermetallic secondary phase. The incorporation of Fe results in the slight reduction of the c lattice parameter, while the a lattice parameter remains unchanged. The nanolaminated (Cr0.932Fe0.068)2AlC thin films show a metallic behavior and can serve as promising candidates for highly conductive coatings.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Ganiev S. M.
Заглавие : Static and dynamic characteristics of the bulk and contact electric resistivity in CDCR2SE4 under stochastic current instability
Место публикации : Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 7. - P.2122-2128. - ISSN 0367-3294
Примечания : Cited References: 21
Предметные рубрики: OSCILLATIONS
CHAOS
GE
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density
Место публикации : Phys. Solid State: AMER INST PHYSICS, 1999. - Vol. 41, Is. 1. - P59-66. - ISSN 1063-7834, DOI 10.1134/1.1130731
Примечания : Cited References: 26
Предметные рубрики: QUANTUM TEMPERATURE OSCILLATIONS
MAGNETIC SEMICONDUCTORS
HGCR2SE4
RESISTIVITY
FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kagan, M. Yu., Val'kov V. V., Aksenov S. V.
Заглавие : Effects of anisotropy and Coulomb interactions on quantum transport in a quadruple quantum-dot structure
Место публикации : Phys. Rev. B: American Physical Society, 2017. - Vol. 95, Is. 3. - Ст.035411. - ISSN 2469-9950, DOI 10.1103/PhysRevB.95.035411. - ISSN 2469-9969(eISSN)
Примечания : Cited References:62. - We acknowledge fruitful discussions with P. I. Arseyev, N. S. Maslova, V. N. Mantsevich, and R. Sh. Ikhsanov. This work was financially supported by the Comprehensive programme SB RAS No. 0358-2015-0007, the RFBR, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Projects No. 15-02-03082, No. 15-42-04372, No. 16-42-243056, and No. 16-42-242036. M. Yu. K. thanks the Program of Basic Research of the National Research University Higher School of Economics for support.
Предметные рубрики: 2-BAND HUBBARD-MODEL
ONE NARROW-BAND
ANOMALOUS RESISTIVITY
Аннотация: We present an analytical and numerical investigation of the spectral and transport properties of a quadruple quantum-dot (QQD) structure which is one of the popular low-dimensional systems in the context of fundamental quantum physics study, future electronic applications, and quantum calculations. The density of states, occupation numbers, and conductance of the structure were analyzed using the nonequilibrium Green's functions in the tight-binding approach and the equation-of-motion method. In particular the anisotropy of hopping integrals and on-site electron energies as well as the effects of the finite intra- and interdot Coulomb interactions were investigated. It was found out that the anisotropy of the kinetic processes in the system leads to the Fano-Feshbach asymmetrical peak. We demonstrated that the conductance of the QQD device has a wide insulating band with steep edges separating triple-peak structures if the intradot Coulomb interactions are taken into account. The interdot Coulomb correlations between the central QDs result in the broadening of this band and the occurrence of an additional band with low conductance due to the Fano antiresonances. It was shown that in this case the conductance of the anisotropic QQD device can be dramatically changed by tuning the anisotropy of on-site electron energies.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Frolov G. I., Zhigalov V. S., Polskii A. I., Pozdnyakov V. G.
Заглавие : Study of electroconductivity in cobalt nanocrystalline films
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1996. - Vol. 38, Is. 4. - P1208-1213. - ISSN 0367-3294
Примечания : Cited References: 13
Предметные рубрики: METAL-FILMS
RESISTIVITY
CONDUCTION
ELECTRONS
DENSITY
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kazak N. V., Bayukov O. A., Ovchinnikov S. G., Vasiliev A. D., Rudenko V. V., Ivanova N. B., Knyazev Yu. V., Bartolom J., Arauzo A.
Заглавие : The superexchange interactions in mixed Co-Fe ludwigite
Место публикации : J. Magn. Magn. Mater. - 2011. - Vol. 323, Is. 5. - P.521-527. - MAR. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2010.09.057
Примечания : Cited Reference Count: 15. - Гранты: This study was supported by the Russian Foundation for Basic Research (Project no. 09-02-00171-a), the Federal Agency for Science and Innovation (Rosnauka) (Project no. MK-5632. 2010.2), Physical Division of the Russian Academy of Science, the program "Strongly Correlated Electrons", project 2.3.1.; The financial support of Spanish MINCYT, MAT08/1077 and Aragonese E-34 project are also acknowledged.Финансирующая организация: Russian Foundation for Basic Research [09-02-00171-a]; Federal Agency for Science and Innovation (Rosnauka) [MK-5632. 2010.2]; Physical Division of the Russian Academy of Science; "Strongly Correlated Electrons" [2.3.1]; Spanish MINCYT [MAT08/1077]; Aragonese E-34 project
Предметные рубрики: TRANSPORT-PROPERTIES
SPECTRA
Ключевые слова (''Своб.индексиров.''): ludwigite structure--magnetic susceptibility--magnetic frustration--mott conductivity--ludwigite structure--magnetic frustration--magnetic susceptibility--mott conductivity--ac susceptibility--cation distributions--crystal data--crystallographic sites--electrical resistivity--iron atoms--low temperatures--ludwigite structure--magnetic behavior--magnetic frustrations--magnetic system--magnetic transitions--mossbauer--mossbauer effects--mott conductivity--mott hopping--superexchange energy--superexchange interaction--temperature regions--trivalent iron--variable range--cobalt--electric conductivity--magnetic susceptibility--magnetism--mossbauer spectroscopy--x ray diffraction--crystal structure
Аннотация: The crystal structure, cation distribution and exchange interactions in the Co2.25Fe0.75O2BO3 ludwigite have been explored through X-ray diffraction, electrical resistivity, ac-susceptibility and Mossbauer effect measurements. The crystal data have shown that iron atoms occupy the most symmetric crystallographic sites Fe4 and Fe2. The complex magnetic behavior with two magnetic transitions near 70 and 115 K at low temperatures was found. The Mossbauer data have displayed the trivalent iron states only. The values of superexchange energies have been estimated for Co3O2BO3 and Co2.25Fe0.75O2BO3 yielding a significant role of frustrations in the ludwigite magnetic system. Variable range Mott hopping conductivity law was proved to be valid in the wide temperature region, pointing out a localized character of charge carriers rather than collective. (C) 2010 Elsevier B.V. All rights reserved.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gokhfeld Yu. S., Solovyov L. A., Vereshchagin S. N., Borus A. A., Gudim I. A., Kazak N. V.
Заглавие : Thermal expansion and resistivity anomalies in Cu2FeBO5 ludwigite
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. G: Frustrated and disordered magnetism. - Ст.G.P9. - P.27-28. - ISBN 978-5-94469-051-7
Примечания : Cited References: 5. - Support by RFBR 20-02-00559 and 21-52-12033 ННИО_а is acknowledged
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