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    Single crystals of EuScCuSe3: Synthesis, experimental and DFT investigations / M. V. Grigoriev, A. V. Ruseikina, V. A. Chernyshev [et al.] // Materials. - 2023. - Vol. 16, Is. 4. - Ст. 1555, DOI 10.3390/ma16041555. - Cited References: 39. - This research was funded by the Tyumen Oblast Government as part of the West-Siberian Interregional Science and Education Center’s project No. 89-DON (3). The work was supported by The Ministry of Science and Higher Education of the Russian Federation, project, No. FEUZ-2023-0017 . - ISSN 1996-1944
   Перевод заглавия: Монокристаллы EuScCuSe3: синтез, экспериментальные и DFT-исследования
Кл.слова (ненормированные):
quaternary chalcogenides -- crystal structure -- DFT calculations -- semiconductors -- vibrational spectroscopy
Аннотация: EuScCuSe3 was synthesized from the elements for the first time by the method of cesium-iodide flux. The crystal belongs to the orthorhombic system (Cmcm) with the unit cell parameters a = 3.9883(3) Å, b = 13.2776(9) Å, c = 10.1728(7) Å, V = 538.70(7) Å3. Density functional (DFT) methods were used to study the crystal structure stability of EuScCuSe3 in the experimentally obtained Cmcm and the previously proposed Pnma space groups. It was shown that analysis of elastic properties as Raman and infrared spectroscopy are powerless for this particular task. The instability of EuScCuSe3 in space group Pnma space group is shown on the basis of phonon dispersion curve simulation. The EuScCuSe3 can be assigned to indirect wide-band gap semiconductors. It exhibits the properties of a soft ferromagnet at temperatures below 2 K.

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Держатели документа:
Laboratory of Theory and Optimization of Chemical and Technological Processes, University of Tyumen, Tyumen 625003, Russia
Institute of Inorganic Chemistry, University of Stuttgart, D-70569 Stuttgart, Germany
Institute of Natural Sciences and Mathematics, Ural Federal University named after the First President of Russia B.N. Yeltsin, Mira Str. 19, Ekaterinburg 620002, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
Institute of Physics and Technology, University of Tyumen, Tyumen 625003, Russia
Institute of Engineering Physics and Radioelectronic of Siberian State University, Krasnoyarsk 660041, Russia
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Russia

Доп.точки доступа:
Grigoriev, Maxim V.; Ruseikina, Anna V.; Chernyshev, Vladimir A.; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Garmonov, Alexander A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Locke, Ralf J. C.; Elyshev, Andrey V.; Schleid, Thomas
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Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation / S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov, H. Abdelbaki // J. Mater. Sci.: Mater. Electron. - 2023. - Vol. 34, Is. 4. - Ст. 284, DOI 10.1007/s10854-022-09731-3. - Cited References: 32. - Council on grants of the President of the Russian Federation, MK-620.2021.1.2, Maksim Sitnikov . - ISSN 1573-482X
Аннотация: The dielectric properties of the HoxMn1−xS (x ≤ 0.1) semiconductors in the frequency range of 100 ˂ ω ˂ 106 Hz at temperatures of 80−550 K have been studied. The temperature crossover from the Debye behavior of the permittivity to the resonance behavior has been found at low holmium concentrations in the compounds. The frequency of the crossover from the migration to dipole orientation polarization with the minimum dielectric loss has been determined. The positive and negative magnetocapacitances for two concentrations of holmium ions have been found. The temperature and frequency ranges of the magnetocapacitance sign change have been established and this phenomenon has been explained using the model of the transition from electrically inhomogeneous to homogeneous states.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russia

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Abdelbaki, H.
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Magnetoimpedance in manganese sulfide substituted with lutetium / M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.] // Phys. Solid State. - 2023. - Vol. 65, Is. 2. - P. 211-217, DOI 10.21883/PSS.2023.02.55402.527. - Cited References: 28. - This study was supported by a grant of the President of the Russian Federation No. MK-620.2021.1.2 . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
Semiconductors -- impedance -- magnetoimpedance -- attenuation of ultrasound
Аннотация: The components of the impedance, the impedance of the LuxMn1–xS (x ˃ 0.2) solid solution in the temperature range of 80-500 K and the frequency of 100-106 Hz were studied. A change in the sign of the magnetoimpedance in concentration and temperature is found. The contribution of the reactive and active components to the magnetoimpedance is determined. The correlation of magnetoimpedance temperatures with the temperatures of the maximum attenuation of ultrasound and electrosound has been established. The frequency dependences of the reactive part of the impedance are described in the Cole-Cole model.

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Публикация на русском языке Магнитоимпеданс в сульфиде марганца, замещенного лютецием [Текст] / М. Н. Ситников, С. С. Аплеснин, А. М. Харьков [и др.] // Физ. тверд. тела. - 2023. - Т. 65 Вып. 2. - С. 219-225

Держатели документа:
Siberian State University of Science and Technology, Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia

Доп.точки доступа:
Sitnikov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kharkov, A. M.; Abdelbaki, H.; Zelenov, F. V.
}
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Phase transitions in a polycrystalline compound Ho0.1Mn0.9S / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // Solid State Commun. - 2023. - Vol. 364. - Ст. 115134, DOI 10.1016/j.ssc.2023.115134. - Cited References: 35. - The investigation of microstructural properties of the samples was carried out using equipment's (SEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center « Krasnoyarsk Science Center SB RAS». This work was supported by the Russian Science Foundation, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Science Foundation project no. 23-22-10016 «The colossal Nernst-Ettingshausen effect in manganese chalcogenides with rare earth substitution» . - ISSN 0038-1098. - ISSN 1879-2766
Кл.слова (ненормированные):
Semiconductors -- Structural transitions -- Electronic transitions -- Mott - Anderson model
Аннотация: Sequence of structural transitions in the magnetically ordered region and a displacement-type structural transition at T = 220 K accompanied by the variation in the thermal expansion coefficient, ultrasound attenuation coefficient, g factor, and polarization current in the polycrystalline compound Ho0.1Mn0.9S was found. The electronic transitions above room temperature were established on the basis of the measurements of the conductivity, ultrasound attenuation maxima, and IR spectra.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, 660036, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsky Rabochy Av., 31, Krasnoyarsk, 660014, Krasnoyarsk, Russia

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Zelenov, F. V.
}
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    A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs / Y. Chen, F. Liu, Z. Zhang [et al.] // J. Mater. Chem. C. - 2022. - Vol. 10, Is. 18. - P. 7049-7057, DOI 10.1039/d2tc00132b. - Cited References: 56. - This work was financially supported by grants from the National Natural Science Foundation of China (NSFC) (No. 51802359), the Joint Funds of NSFC and Yunnan Province (No. U1702254), and Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556) . - ISSN 2050-7534
   Перевод заглавия: Новый Mn4+-активированный фторидный красный люминофор Cs30(Nb2O2F9)9(OH)3ћH2O:Mn4+ с хорошей водонепроницаемостью для WLED
Кл.слова (ненормированные):
Crystal structure -- Fluorine compounds -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light emission -- Light emitting diodes -- Optical properties -- Phosphors -- Precipitation (chemical) -- Waterproofing
Аннотация: Red-light-emitting materials, as pivotal components of warm white light-emitting diodes (WLEDs), have drawn increasing public focus. Among these, Mn4+-doped red light-emitting fluorides have drawn considerable attention when combined with an InGaN chip; however, they suffer from poor water stability under humid conditions. In this work, a novel fluoride red phosphor, Cs30(Nb2O2F9)9(OH)3·H2O:xMn4+ (CNOFM), with good water resistance was synthesized for the first time using a facile co-precipitation method at ambient temperature. Experiments were implemented for the precise analysis of its crystal structure, optical properties, micro-morphology, thermal behavior, and waterproof properties. 6.66% Mn4+-doped CNOFM maintained a stable crystal structure and possessed strong PL intensity located at 633 nm with high color purity of 96%. CNOFM showed better thermal and waterproof stability compared with the commercial K2SiF6:Mn4+ red phosphor. Without any surface modifications, the PL intensity remained at about 83% of the initial value after immersion in water for 60 min, and the mechanism was investigated. Finally, a warm WLED with a CRI of 92.3 and CCT of 3271 K was fabricated using the CNOFM red phosphor.

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Держатели документа:
MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Sun Yat-Sen University, School of Chemistry/School of Marine Sciences, 510275/Zhuhai, Guangzhou, 519082, China
Laboratory of Crystal Physics, Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Institute of Resources Utilization and Rare Earth Development, Guangdong Academy of Sciences, Guangzhou, 510650, China

Доп.точки доступа:
Chen, Y.; Liu, F.; Zhang, Z.; Hong, J.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Bobrikov, I. A.; Shi, J.; Zhou, J.; Wu, M.
}
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    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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    Highly efficient Fe3+-doped A2 BB′O6 (A = Sr2+, Ca2+; B, B′ = In3+, Sb5+, Sn4+) broadband near-infrared-emitting phosphors for spectroscopic analysis / D. Liu, G. Li, P. Dang [et al.] // Light Sci. Appl. - 2022. - Vol. 11, Is. 1. - Ст. 112, DOI 10.1038/s41377-022-00803-x. - Cited References: 50. - This work was financially supported by the National Natural Science Foundation of China (NSFC Nos. 51720105015, 51932009, 51929201, 52072349), the Projects for Science and Technology Development Plan of Jilin Province (20210402046GH), and the Natural Science Foundation of Zhejiang Province (LR22E020004) . - ISSN 2095-5545
   Перевод заглавия: Высокоэффективные люминофоры A2BB'O6, легированные Fe3+ (A = Sr2+, Ca2+; B, B' = In3+, Sb5+, Sn4+), широкополосные люминофоры ближнего инфракрасного диапазона для спектроскопического анализа
Рубрики:
Optical properties of diamond
   Inorganic LEDs
Кл.слова (ненормированные):
Antimony compounds -- Efficiency -- III-V semiconductors -- Light emission -- Near infrared spectroscopy -- Optical properties -- Phosphors -- Spectroscopic analysis
Аннотация: Near-infrared (NIR)-emitting phosphor-converted light-emitting diodes have attracted widespread attention in various applications based on NIR spectroscopy. Except for typical Cr3+-activated NIR-emitting phosphors, next-generation Cr3+-free NIR-emitting phosphors with high efficiency and tunable optical properties are highly desired to enrich the types of NIR luminescent materials for different application fields. Here, we report the Fe3+-activated Sr2−yCay(InSb)1−zSn2zO6 phosphors that exhibit unprecedented long-wavelength NIR emission. The overall emission tuning from 885 to 1005 nm with broadened full-width at half maximum from 108 to 146 nm was realized through a crystallographic site engineering strategy. The NIR emission was significantly enhanced after complete Ca2+ incorporation owing to the substitution-induced lower symmetry of the Fe3+ sites. The Ca2InSbO6:Fe3+ phosphor peaking at 935 nm showed an ultra-high internal quantum efficiency of 87%. The as-synthesized emission-tunable phosphors demonstrated great potential for NIR spectroscopy detection. This work initiates the development of efficient Fe3+-activated broadband NIR-emitting phosphors and opens up a new avenue for designing NIR-emitting phosphor materials.

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Держатели документа:
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
University of Science and Technology of China, Hefei, 230026, China
Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China
Zhejiang Institute, China University of Geosciences, Hangzhou, 311305, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Research and Development Department, Kemerovo State University, Kemerovo, 650000, Russian Federation
School of Material Science and Engineering, Shandong University, Jinan, 266071, China

Доп.точки доступа:
Liu, D.; Li, G.; Dang, P.; Zhang, Q.; Wei, Y.; Qiu, L.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Lian, H.; Shang, M.; Lin, J.
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Evolution of structural, thermal, optical, and vibrational properties of Sc2S3, ScCuS2, and BaScCuS3 semiconductors / N. O. Azarapin, A. S. Oreshonkov, I. A. Razumkova [et al.] // Eur. J. Inorg. Chem. - 2021. - Vol. 2021, Is. 33. - P. 3355-3366, DOI 10.1002/ejic.202100292. - Cited References: 50. - The work was partially carried out using the resources of the Research Resource Center "Natural Resources Management and Physico-Chemical Research" (Tyumen University) with financial support from the Ministry of Science and Higher Education of the Russian Federation (contract No. 05.594.21.0019, UIN RFMEFI59420X0019). The Raman spectroscopic studies were carried out at the collaborative research center for vibrational spectroscopy at ISSC UB RAS (Ekaterinburg, Russia). I.I.L. would like to acknowledge the support from the Research Program No. AAAA-A19-119031890025-9 (ISSC UB RAS). The use of the equipment of Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center "Krasnoyarsk Science Center SB RAS" is acknowledged." The authors are grateful to Dr. Elena V. Vladimirova (ISSC UB RAS) for technical assistance . - ISSN 1434-1948. - ISSN 1099-0682

РУБ Chemistry, Inorganic & Nuclear
Рубрики:
RARE-EARTH
QUATERNARY CHALCOGENIDES
CRYSTAL-STRUCTURES
Кл.слова (ненормированные):
Complex sulfides -- Density functional calculations -- DTA -- Polychalcogenides -- Rare earths
Аннотация: In the present work, we report on the synthesis of Sc2S3, ScCuS2 and BaScCuS3 powders using a method based on oxides sulfidation and modification of their properties. The crystal structures and morphology of samples are verified by XRD and SEM techniques. Thermal stability has been studied by DTA which has revealed that Sc2S3 decomposes to ScS through melting at 1877 K. ScCuS2 and BaScCuS3 melt incongruently at temperatures of 1618 K and 1535 K, respectively. The electronic structure calculations show that the investigated compounds are semiconductors with indirect band gap (Eg). According to the diffuse reflection spectroscopy, Sc2S3, ScCuS2 and BaScCuS3 are wide-bandgap semiconductors featured the Eg values of 2.53 eV, 2.05 eV and 2.06 eV, respectively. The band gap decreases with the introduction of copper (I) and barium cations into the crystal structure of the compounds. Variation of local structure has been verified by Raman and infrared spectroscopy. The calculated vibrational modes of ScCuS2 correspond to CuS4 and Sc−S layer vibrations, even though ScS6 octahedra-like structural units can be found in the structure.

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Держатели документа:
Tyumen State Univ, Dept Inorgan & Phys Chem, Tyumen 625003, Russia.
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Lab Mol Spect, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Sch Engn & Construct, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Nanotechnol Spect & Quantum Chem, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Inst Chem & Chem Technol, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Ural Branch, Inst Solid State Chem, Ekaterinburg 620990, Russia.

Доп.точки доступа:
Azarapin, N. O.; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Razumkova, I. A.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Maximov, N. G.; Leonidov, I. I.; Shestakov, N. P.; Шестаков, Николай Петрович; Andreev, O. V.; Ministry of Science and Higher Education of the Russian Federation [05.594.21.0019, UIN RFME-FI59420X0019]; ISSC UB RAS [AAAA-A19-119031890025-9]
}
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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10.

Romanova, O. B.
Effect of electron and hole doping on the transport characteristics of chalcogenide systems / O. B. Romanova, S. S. Aplesnin, L. V. Udod // Phys. Solid State. - 2021. - Vol. 63, Is. 5. - P. 754-757, DOI 10.1134/S1063783421050152. - Cited References: 21. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-PROPERTIES
TRANSITION
Кл.слова (ненормированные):
semiconductors -- conductivity -- Hall constant -- mobility
Аннотация: The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80-400 K in a magnetic field of 12 kOe. Using the I-V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.

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Публикация на русском языке Романова, Оксана Борисовна. Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем [Текст] / О. Б. Романова, С. С. Аплеснин, Л. В. Удод // Физ. тверд. тела. - 2021. - Т. 63 Вып. 5. - С. 606-609

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Романова, Оксана Борисовна; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
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