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    A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs / Y. Chen, F. Liu, Z. Zhang [et al.] // J. Mater. Chem. C. - 2022. - Vol. 10, Is. 18. - P. 7049-7057, DOI 10.1039/d2tc00132b. - Cited References: 56. - This work was financially supported by grants from the National Natural Science Foundation of China (NSFC) (No. 51802359), the Joint Funds of NSFC and Yunnan Province (No. U1702254), and Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556) . - ISSN 2050-7534
   Перевод заглавия: Новый Mn4+-активированный фторидный красный люминофор Cs30(Nb2O2F9)9(OH)3ћH2O:Mn4+ с хорошей водонепроницаемостью для WLED
Кл.слова (ненормированные):
Crystal structure -- Fluorine compounds -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light emission -- Light emitting diodes -- Optical properties -- Phosphors -- Precipitation (chemical) -- Waterproofing
Аннотация: Red-light-emitting materials, as pivotal components of warm white light-emitting diodes (WLEDs), have drawn increasing public focus. Among these, Mn4+-doped red light-emitting fluorides have drawn considerable attention when combined with an InGaN chip; however, they suffer from poor water stability under humid conditions. In this work, a novel fluoride red phosphor, Cs30(Nb2O2F9)9(OH)3·H2O:xMn4+ (CNOFM), with good water resistance was synthesized for the first time using a facile co-precipitation method at ambient temperature. Experiments were implemented for the precise analysis of its crystal structure, optical properties, micro-morphology, thermal behavior, and waterproof properties. 6.66% Mn4+-doped CNOFM maintained a stable crystal structure and possessed strong PL intensity located at 633 nm with high color purity of 96%. CNOFM showed better thermal and waterproof stability compared with the commercial K2SiF6:Mn4+ red phosphor. Without any surface modifications, the PL intensity remained at about 83% of the initial value after immersion in water for 60 min, and the mechanism was investigated. Finally, a warm WLED with a CRI of 92.3 and CCT of 3271 K was fabricated using the CNOFM red phosphor.

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Держатели документа:
MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Sun Yat-Sen University, School of Chemistry/School of Marine Sciences, 510275/Zhuhai, Guangzhou, 519082, China
Laboratory of Crystal Physics, Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Institute of Resources Utilization and Rare Earth Development, Guangdong Academy of Sciences, Guangzhou, 510650, China

Доп.точки доступа:
Chen, Y.; Liu, F.; Zhang, Z.; Hong, J.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Bobrikov, I. A.; Shi, J.; Zhou, J.; Wu, M.
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Abramova, G. M.
Metal-insulator transition, magnetoresistance, and magnetic properties of 3d-sulfides (Review) / G. M. Abramova, G. A. Petrakovskii // Low Temp. Phys. - 2006. - Vol. 32, Is. 8-9. - P. 725-734 ; Физика низких температур, DOI 10.1063/1.2219495. - Cited References: 74 . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
GIANT-MAGNETORESISTANCE
   PHASE-TRANSITION
   ALPHA-MNS
   COLOSSAL MAGNETORESISTANCE
   SINGLE-CRYSTALS
   FES-MNS
   SULFIDES
   FERROMAGNETISM
   SEMICONDUCTORS
   TEMPERATURE
Аннотация: The results of a study of the transport and magnetic properties of some sulfides of 3d elements are reported. The concentration transitions with a change of conductivity type and a change of magnetic order are considered, and the features of the colossal magnetoresistance in FexMn1-xS and CuVxCr1-xS2 solid solutions are discussed.

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Держатели документа:
Russian Acad Sci, LV Kirenskii Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
L. V. Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Akademgorodok 660036, Russian Federation

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Абрамова, Галина Михайловна

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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Alekseev, K. N.
Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34 . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATOR
   SUPERLATTICES
   PHOTOCURRENT
   TRANSPORT
   FREQUENCY
   FIELD
   RECTIFIERS
   EMISSION
   CHAOS
   GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England
Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom
Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation

Доп.точки доступа:
Erementchouk, M. V.; Kusmartsev, F. V.
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    Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance / T. Hu [et al.] // J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P. 14594-14600, DOI 10.1039/c9tc05354a. - Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980). . - ISSN 2050-7534
   Перевод заглавия: Алиовалентное замещение с целью усиления структурной жесткости в люминофорных гранатах, легированных Ce3 + и имеющих улучшенные характеристики
Кл.слова (ненормированные):
Color -- Deterioration -- Efficiency -- Gallium alloys -- Garnets -- III-V semiconductors -- Indium alloys -- Photoluminescence -- Reinforcement -- Rigidity -- Semiconductor alloys -- Thermal Engineering -- Thermodynamic stability
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation

Доп.точки доступа:
Hu, T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Xia, Z.; Zhang, Q.
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Aplesnin, S. S.
Conductivity of HoxMn1-xS magnetic semiconductors with orbital ordering / S. S. Aplesnin, M. N. Sitnikov // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 47

Материалы конференции

Доп.точки доступа:
Sitnikov, M. N.; Аплеснин, Сергей Степанович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАНКазанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития
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Aplesnin, S. S.
Magnetoresistance effect in anion-substituted manganese chalcogenides / S. S. Aplesnin, O. B. Romanova, K. I. Yanushkevich // Phys. Status Solidi B. - 2015. - Vol. 252, Is. 8. - P. 1792-1798, DOI 10.1002/pssb.201451607. - Cited References: 35. - This study was supported by the official assignment no. 114090470016. . - ISSN 0370. - ISSN 1521-3951. -

РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-PROPERTIES
   ELECTRONIC-STRUCTURE
   SOLID-SOLUTIONS
   MnTe
   MnSe
   CONDUCTIVITY
   TRANSITION
Кл.слова (ненормированные):
Electron tunneling -- Magnetic properties -- Magnetoresistance -- Semiconductors
Аннотация: The electric and magnetic properties of anion-substituted antiferromagnetic MnSe1-xTex (0.1≤x≤0.4) semiconductors in the 77-700K temperature range and magnetic fields under 1T are studied. In the MnSe1-xTex solid solutions, negative magnetoresistance in the vicinity of the Néel temperature for x=0.1 and for composition with x=0.2 in the paramagnetic range below 270K is revealed. A dependence of the magnetic susceptibility versus the prehistory of the samples is found. The model of localized spin-polarized electrons with the localization radius depending on the magnetic field is proposed for x=0.1. In the paramagnetic range, the negative magnetoresistance and the behavior of magnetic moment are a result of orbital glass formation.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Akademgorodok 50, Krasnoyarsk, Russian Federation
Siberian State Aerospace University M F Reshetnev, Krasnoyarsky Rabochy Av. 31, Krasnoyarsk, Russian Federation
Scientific-Practical Materials Research Center NAS, P. Brovski Str.19, Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Янушкевич, Казимир Иосифович; Yanushkevich K. I.; Аплеснин, Сергей Степанович
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    Atomic layer deposition ZnO on porous Al2O3 nanofibers film / A. S. Voronin, A. N. Masiygin, M. S. Molokeev, S. V. Khartov // J. Phys. Conf. Ser. - 2020. - Vol. 1679, Is. 2. - Ст. 022072DOI 10.1088/1742-6596/1679/2/022072. - Cited References: 10. - Studies by scanning electron microscopy and X-ray powder diffraction were performed on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS». The transmission electron microscopy investigations were conducted in the SFU Joint Scientific Center supported by the State assignment (#FSRZ-2020-0011) of the Ministry of Science and Higher Education of the Russian Federation
   Перевод заглавия: Нанесение атомного слоя ZnO на пленку из пористых нановолокон Al2O3
Кл.слова (ненормированные):
Alumina -- Aluminum oxide -- Atomic layer deposition -- Atoms -- Composite structures -- High resolution transmission electron microscopy -- II-VI semiconductors -- Nanofibers -- Oxide minerals -- Scanning electron microscopy
Аннотация: The paper presents the results of the formation and study of the morphological and structural characteristics of the mesoporous ZnO / Al2O3 nanofibers film (ZANF). The deposition of a ZnO layer on Al2O3 nanofibers film (ANF) ~ 1 µm thick was carried out by the method of atomic layer deposition. The morphology of the mesoporous composite layer ZnO / Al2O3 (ZANF) has been studied by scanning and transmission electron microscopy. It is shown that in the process of atomic layer deposition, the ZnO layer grows according to the Stranski-Krastanov mechanism. A ZnO layer less than 5 nm thick gives an island structure in which Al2O3 nanofibers are uniformly coated with ZnO particles, an increase in the ZnO layer thickness to 15 nm demonstrates a continuous coating of Al2O3 nanofibers. The system has a core-shell structure. The resulting composite structures are promising for applications in photocatalysis and gas sensing.

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Держатели документа:
Federal Research Center Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences (KSC SB RAS), Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Reshetnev Siberian State University Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Voronin, A. S.; Masiygin, A. N.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Khartov, S. V.; International Scientific Conference on Applied Physics, Information Technologies and Engineering(2nd ; 25 September - 4 October 2020 ; Krasnoyarsk, Russian Federation)
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BATIYEV, E. G.
SUPERCONDUCTIVITY IN MULTI-VALLEY SEMICONDUCTORS / E. G. BATIYEV, V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1986. - Vol. 90, Is. 2. - P. 558-568. - Cited References: 13 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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Доп.точки доступа:
BORISYOUK, V. A.
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10.

Berzhanskii, V. N.
Photo-excited charge carrier mobility in magnetic p-type semiconductors on CDCR2SE4 bases / V. N. Berzhanskii, V. K. Chernov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 10. - P. 3179-3181. - Cited References: 8 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
Chernov, V. K.; Бержанский, Владимир Наумович
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