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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Аверьянов, Евгений Михайлович
Заглавие : Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных
Место публикации : Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46. - ISSN 1991-3966, DOI 10.18083/LCAppl.2020.1.41; Liq. Cryst. Appl.
Примечания : Библиогр.: 7
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Renormalization of triplet populations of a spin dimer in zero magnetic field with quantum transport
Коллективы : Ural International Winter School on the Physics of Semiconductors , Program for Fundamental Research of the Presidium of the Russian Academy of Sciences [32]; Russian Fund for Basic Research [16-02-00073, 18-32-00443]; Government of Krasnoyarsk Krai; Krasnoyarsk Regional Fund for Science [17-42-240441, 18-42-243017]; Russian Federation [MK-3722.2018.2]
Место публикации : Low Temp. Phys. - 2019. - Vol. 45, Is. 2: 22nd Ural International Winter School on the Physics of Semiconductors (Feb 20-23, 2018, Alapayevsk, RUSSIA). - P.165-175. - ISSN 1063-777X, DOI 10.1063/1.5086406. - ISSN 1090-6517(eISSN)
Примечания : Cited References: 20. - This work was performed with the support of the Program for Fundamental Research of the Presidium of the Russian Academy of Sciences, No. 32, "Nanostructures: physics, chemistry, biology, foundations of technology", the Russian Fund for Basic Research (grants #16-02-00073, #18-32-00443), the Government of Krasnoyarsk Krai, the Krasnoyarsk Regional Fund for Science within the scientific projects: "Connected Majorana fermions in nanomaterials with strong electron correlations and quantum transport of electrons in systems based on them" (No. 17-42-240441) and "Manifestation of Coulomb interactions and the effects of limited geometry in properties of topological regional states of nanostructures from spin-orbital interaction" (No. 18-42-243017). S.A. expresses his gratitude for a grant of the President of the Russian Federation MK-3722.2018.2.
Предметные рубрики: SINGLE-MOLECULE
Аннотация: Based on the nonequilibrium Keldysh technique in the atomic representation, the effect of inducing a varied population of magnetic states of a spin dimer interacting with electrons transported through a system in a zero magnetic field was studied. In order to find the filling numbers of the quantum states of the system under the strong nonequilibrium condition, a system of kinetic equations was derived and solved by the method of nonequilibrium diagram technique for Hubbard operators. Numerical analysis of these equations made it possible to reveal nonequilibrium renormalizations when accounting for strong spin-fermion correlations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Har'kov A. M., Gorev M. V., Balaev A. D., Eremin E. V., Bovina A. F.
Заглавие : The magnetoelastic effect in CoxMn1-xS solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: The magnetoelastic effect in Cox Mn1 - x S solid solutions
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2010. - Vol. 150, Is. 13-14. - P564-567. - ISSN 0038-1098, DOI 10.1016/j.ssc.2010.01.009
Примечания : Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a.
Предметные рубрики: YVO3 SINGLE-CRYSTAL
SPIN-STATE
TRANSITION
TRANSPORT
PHYSICS
LACOO3
Ключевые слова (''Своб.индексиров.''): semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--coefficient of thermal expansion--magnetoelastic effects--orbital ordering--temperature hysteresis--temperature range--zero magnetic fields--crystallization--electric resistance--magnetic field effects--magnetoresistance--manganese--manganese compounds--neon--organic polymers--scattering--semiconductor quantum dots--solid solutions--solidification--thermal stress--x ray scattering--thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H 0.1 T and at T 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Matsunin A. A., Mikhlin Y. L., Zhigalov V. S., Bykova L. E., Tambasov I. A., Bondarenko G. N., Patrin G. S., Velikanov D. A.
Заглавие : Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed. S. G. Ovchinnikov: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.167-172. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.167. - ISSN 1662-9779
Примечания : Cited References: 28
Ключевые слова (''Своб.индексиров.''): diluted semiconductors--manganese germanides--solid-state reactions--spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Yanushkevich K. I., Sokolov V. V.
Заглавие : Synthesis and magnetic and electrical study of TmxMn1–xS solid solutions
Место публикации : Bull. Russ. Acad. Sci. Phys.: Allerton Press Incorporation, 2016. - Vol. 80, Is. 6. - P.679-681. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873816060265
Примечания : Cited References: 12
Ключевые слова (''Своб.индексиров.''): activation energy--magnetism--temperature distribution--antiferromagnetic semiconductors--electrical studies--fcc lattice--magnetic transitions--nacl type--temperature dependence of resistivities--manganese
Аннотация: New antiferromagnetic semiconductor compounds TmxMn1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Yakovlev I. A., Volochaev M. N., Lukyanenko A. V., Tarasov A. S., Volkov N. V.
Заглавие : Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 14. - P.88-92. - ISSN 1063-7826 (ISSN), DOI 10.1134/S1063782619140045. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 27. - The work was supported by the Russian Foundation for Basic Research project no. 17-02-00302.
Предметные рубрики: NANOSTRUCTURE DEVICES
Аннотация: Lateral photovoltaic effect in metal/insulator/semiconductor hybrid structures is a significant phenomenon for spintronics, as it establishes the interplay between the optical irradiation, electronic transport and spin-dependent properties of carriers. In present work we investigated photovoltaic phenomena in Mn/SiO2/n-Si MOS structure. The sample was prepared on a single-crystal n-Si (phosphorus-doped) substrate. The SiO2 layer with thickness of 1.5 nm was formed on the substrate surface by a chemical method. Manganese film with thickness of 15nm was deposited by thermal evaporation in ultrahigh vacuum in the “Angara” chamber. It was observed that at T 45 K the values of lateral and transversal photovoltage nonmonotonically depend on the temperature and such dependences show complex behavior. Features of the photovoltage dependence on temperature, in the region above 20 K are explained by the change of carriers’ mobility and the competition between carriers’ drift velocity in the electric field of the space-charge region and their diffusion rate in the transverse and lateral directions. Below 20 K, the main contribution into the photovoltage is given by hot electrons injected from surface states levels to the conduction band. A strong magnetic field influence on the photovoltage below 20 K was observed. We associate it with the Lorenz force effect on the hot electrons, although we also don’t exclude the presence of mechanisms caused by spindependent scattering and recombination of hot electrons at occupied donor states.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Denisova E. A., Chekanova L. A., Komogortsev S. V., Nemtsev I. V., Iskhakov R. S.
Заглавие : Structure and Magnetic Properties of the FeCo–C Films Reduced by Carbohydrates
Место публикации : Semiconductors. - 2020. - Vol. 54, Is. 14. - P.1840-1842. - ISSN 1063-7826 (ISSN), DOI 10.1134/S1063782620140079. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 9. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure)
Аннотация: The structural and magnetic properties of FeCo–C films produced by electroless plating with differentcarbohydrates as reducing agents have been investigated. The surface morphology and coercivities of FeCo–C films are dependent on the iron content and type of reducing agent. The local magnetic anisotropy field value increases with a decrease in Fe content. For all systems, deposits with good soft magnetic properties were obtained, with coercivities less than 12 Oe and saturation magnetizations close to 240 emu/g for FeCo–C film with 30% cobalt. The best soft magnetic properties corresponded to the deposits with bcc structure and grain sizes less than 20 nm.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Kalinin, Yu E., Kashirin M. A., Makagonov V. A., Pankov, S. Yu, Bassarab V. V.
Заглавие : Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films
Коллективы : Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 11. - P.1465-1471. - ISSN 1063-7826, DOI 10.1134/S106378261911023X. - ISSN 1090-6479(eISSN)
Примечания : Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6.
Предметные рубрики: HETEROSTRUCTURES
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).
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