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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Nemtsev I. V., Bykova L. E., Bondarenko G. N., Mihlin J. L., Maksimov I. A., Ivanov V. V., Balashov S. V., Karpenko D. S.
Заглавие : Structural and optical properties of thin In2O3 films produced by autowave oxidation
Место публикации : Semiconductors. - 2013. - Vol. 47, Is. 4. - P.569-573. - DOI 10.1134/S1063782613040210
Аннотация: Cubic-phase In2O3 films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In2O3 films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10–2Ω cm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Har'kov A. M., Balaev D. A., Gorev M. V., Vorotynov A. M., Sokolov V. V., Pichugin A.
Заглавие : Metal–semiconductor transition in SmxMn1−xS solid solutions
Место публикации : Phys. Status Solidi B. - 2012. - Vol. 249, Is. 4. - P.812-817. - ISSN 0370-1972, DOI 10.1002/pssb.201147327
Примечания : Cited References: 27. - This study was supported by the Russian Foundation for Basic Research project No 09-02-00554_a; No 09-02-92001-NNS_a; No 11-02-98018 r_sibir_a; ADTP "Development of scientific potential of the higher school" No. 2.1.1/11763.
Предметные рубрики: Magnetic-properties
Phase-transition
SmS
Valence
Pressure
Crystal
Lattice
CeRhSb
Ключевые слова (''Своб.индексиров.''): kondo effect--metal-semiconductor transition--semiconductors--variable-valence elements
Аннотация: The electrical resistivity of the SmxMn1−xS (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at xc = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm0.2Mn0.8S is found.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Har'kov A. M., Eremin E. V., Romanova O. B., Balaev D. A., Sokolov V. V., Pichugin A. Yu.
Заглавие : Nonuniform magnetic states and electrical properties of SmXMn1-XS solid solutions
Коллективы : IEEE International Magnetics Conference
Место публикации : IEEE Trans. Magn.: IEEE-Institute Electrical and Electronics Engineers, 2011. - Vol. 47, Is. 10. - P.4413-4416. - ISSN 0018-9464, DOI 10.1109/TMAG.2011.2160715
Примечания : Cited References: 13
Ключевые слова (''Своб.индексиров.''): conductivity--magnetic semiconductors--magnetization processes
Аннотация: The real and imaginary parts of magnetic permeability at the three frequencies 100 Hz, 1 kHz and 10 kHz and magnetic moment in magnetic field H = 0.05 T in the SmXMn1-XS(0.1
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S. S., Har'kov A. M., Romanova O. B., Sokolov V. V., Yanushkevich K. I.
Заглавие : Magnеtic propеrtiеs of semiconductors YbxMn1-xS
Коллективы : Joint European Magnetic Symposia (6; 2012 ; Sent. ; 9-14; Parma, Italy)
Место публикации : Joint Europ. Magn. Symp. (JEMS-2012): Book of abstracts. - 2012. - P.271-272
Материалы конференции
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Bondarenko G. V., Bondarenko G. N., Patrin G. S., Velikanov D. A.
Заглавие : Phase transformations in the Mn-Ge system and in Ge x Mn1-x diluted semiconductors
Место публикации : JETP Letters. - 2012. - Vol. 96, Is. 1. - P.40-43. - ISSN 0021-3640, DOI 10.1134/S0021364012130097
Примечания : Cited References: 36
Предметные рубрики: HIGH-PRESSURE SYNTHESIS
MAGNETIC-PROPERTIES
THIN-FILMS
Аннотация: Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn5Ge3 phase is formed first on the Ge/Mn interface after annealing at similar to 120A degrees C. The further increase in the annealing temperature to 300A degrees C leads to the beginning of the synthesis of the Mn11Ge8 phase, which becomes dominating at 400A degrees C. The existence of new structural transitions in the Mn-Ge system in the region of similar to 120 and similar to 300A degrees C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn5Ge3 and Mn11Ge8 phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge (x) Mn1 - x (x 0.95) diluted semiconductors has been substantiated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Tambasov I. A., Bayukov O. A., Zhigalov V. S., Bykova L. E., Mikhlin Yu. L., Volochaev M. N., Bondarenko G. N.
Заглавие : Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films
Место публикации : J. Alloys Compd.: Elsevier Science, 2014. - Vol. 612. - P.189-194. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2014.05.176. - ISSN 1873-4669
Примечания : Cited References: 56
Предметные рубрики: HIGH-TEMPERATURE FERROMAGNETISM
PHASE-FORMATION
In2O
OXIDE
NANOPARTICLES
CO
SEMICONDUCTORS
NANOCRYSTALS
COMBUSTION
SYSTEMS
Ключевые слова (''Своб.индексиров.''): thermite reactions--reactive films--ferromagnetic nanocomposite films--transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Matsunin A. A., Mikhlin Y. L., Zhigalov V. S., Bykova L. E., Tambasov I. A., Bondarenko G. N., Patrin G. S., Velikanov D. A.
Заглавие : Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed. S. G. Ovchinnikov: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.167-172. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.167. - ISSN 1662-9779
Примечания : Cited References: 28
Ключевые слова (''Своб.индексиров.''): diluted semiconductors--manganese germanides--solid-state reactions--spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Abramova G. M., Schefer, Juerg, Aliouane N., Boehm M., Petrakovskiy G. A., Vorotynov A. M., Gorev M. V., Bovina A. F., Sokolov V. V.
Заглавие : Single-crystal and powder neutron diffraction study of the FeXMn1−XS solid solutions
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 632. - P.563-567. - ISSN 0925, DOI 10.1016/j.jallcom.2015.01.162. - ISSN 18734669(eISSN)DOI 10.1002/chin.201522001
Примечания : Cited References:23. - This study was supported in part by the INTAS project no. 06-1000013-9002 and the CRDF-SB RAS project no. RUP1-7054-KR-11, N 16854.
Предметные рубрики: PHASE-TRANSITIONS
ALPHA-MNS
MAGNETIC STRUCTURES
HIGH-PRESSURE
FEO
Ключевые слова (''Своб.индексиров.''): magnetic semiconductors--neutron diffraction
Аннотация: The α-MnS-based FeXMn1−XS (0 < x < 0.3) solid solutions are synthesized and shown to be new Mott materials with the rock salt structure. Neutron diffraction data show that the chemical-pressure-induced Neel temperature shift from 150 (x = 0) to 200 K (x = 0.29) observed in these materials is accompanied by a decrease in the NaCl-type cubic lattice parameters. It is established that at the symmetry transformation in the compositions with x = 0.25 and 0.29 the structural transition occurs, which is followed by the magnetic transition. These features make the FeXMn1−XS solid solutions interesting for both fundamental study of the interrelation between the magnetic, electrical, and structural properties in MnO-type strongly correlated electron systems and application.
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