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    Single crystals of EuScCuSe3: Synthesis, experimental and DFT investigations / M. V. Grigoriev, A. V. Ruseikina, V. A. Chernyshev [et al.] // Materials. - 2023. - Vol. 16, Is. 4. - Ст. 1555, DOI 10.3390/ma16041555. - Cited References: 39. - This research was funded by the Tyumen Oblast Government as part of the West-Siberian Interregional Science and Education Center’s project No. 89-DON (3). The work was supported by The Ministry of Science and Higher Education of the Russian Federation, project, No. FEUZ-2023-0017 . - ISSN 1996-1944
   Перевод заглавия: Монокристаллы EuScCuSe3: синтез, экспериментальные и DFT-исследования
Кл.слова (ненормированные):
quaternary chalcogenides -- crystal structure -- DFT calculations -- semiconductors -- vibrational spectroscopy
Аннотация: EuScCuSe3 was synthesized from the elements for the first time by the method of cesium-iodide flux. The crystal belongs to the orthorhombic system (Cmcm) with the unit cell parameters a = 3.9883(3) Å, b = 13.2776(9) Å, c = 10.1728(7) Å, V = 538.70(7) Å3. Density functional (DFT) methods were used to study the crystal structure stability of EuScCuSe3 in the experimentally obtained Cmcm and the previously proposed Pnma space groups. It was shown that analysis of elastic properties as Raman and infrared spectroscopy are powerless for this particular task. The instability of EuScCuSe3 in space group Pnma space group is shown on the basis of phonon dispersion curve simulation. The EuScCuSe3 can be assigned to indirect wide-band gap semiconductors. It exhibits the properties of a soft ferromagnet at temperatures below 2 K.

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Держатели документа:
Laboratory of Theory and Optimization of Chemical and Technological Processes, University of Tyumen, Tyumen 625003, Russia
Institute of Inorganic Chemistry, University of Stuttgart, D-70569 Stuttgart, Germany
Institute of Natural Sciences and Mathematics, Ural Federal University named after the First President of Russia B.N. Yeltsin, Mira Str. 19, Ekaterinburg 620002, Russia
Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
Institute of Physics and Technology, University of Tyumen, Tyumen 625003, Russia
Institute of Engineering Physics and Radioelectronic of Siberian State University, Krasnoyarsk 660041, Russia
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Russia

Доп.точки доступа:
Grigoriev, Maxim V.; Ruseikina, Anna V.; Chernyshev, Vladimir A.; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Garmonov, Alexander A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Locke, Ralf J. C.; Elyshev, Andrey V.; Schleid, Thomas
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Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation / S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov, H. Abdelbaki // J. Mater. Sci.: Mater. Electron. - 2023. - Vol. 34, Is. 4. - Ст. 284, DOI 10.1007/s10854-022-09731-3. - Cited References: 32. - Council on grants of the President of the Russian Federation, MK-620.2021.1.2, Maksim Sitnikov . - ISSN 1573-482X
Аннотация: The dielectric properties of the HoxMn1−xS (x ≤ 0.1) semiconductors in the frequency range of 100 ˂ ω ˂ 106 Hz at temperatures of 80−550 K have been studied. The temperature crossover from the Debye behavior of the permittivity to the resonance behavior has been found at low holmium concentrations in the compounds. The frequency of the crossover from the migration to dipole orientation polarization with the minimum dielectric loss has been determined. The positive and negative magnetocapacitances for two concentrations of holmium ions have been found. The temperature and frequency ranges of the magnetocapacitance sign change have been established and this phenomenon has been explained using the model of the transition from electrically inhomogeneous to homogeneous states.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russia

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Abdelbaki, H.
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Magnetoimpedance in manganese sulfide substituted with lutetium / M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.] // Phys. Solid State. - 2023. - Vol. 65, Is. 2. - P. 211-217, DOI 10.21883/PSS.2023.02.55402.527. - Cited References: 28. - This study was supported by a grant of the President of the Russian Federation No. MK-620.2021.1.2 . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
Semiconductors -- impedance -- magnetoimpedance -- attenuation of ultrasound
Аннотация: The components of the impedance, the impedance of the LuxMn1–xS (x ˃ 0.2) solid solution in the temperature range of 80-500 K and the frequency of 100-106 Hz were studied. A change in the sign of the magnetoimpedance in concentration and temperature is found. The contribution of the reactive and active components to the magnetoimpedance is determined. The correlation of magnetoimpedance temperatures with the temperatures of the maximum attenuation of ultrasound and electrosound has been established. The frequency dependences of the reactive part of the impedance are described in the Cole-Cole model.

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Публикация на русском языке Магнитоимпеданс в сульфиде марганца, замещенного лютецием [Текст] / М. Н. Ситников, С. С. Аплеснин, А. М. Харьков [и др.] // Физ. тверд. тела. - 2023. - Т. 65 Вып. 2. - С. 219-225

Держатели документа:
Siberian State University of Science and Technology, Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia

Доп.точки доступа:
Sitnikov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kharkov, A. M.; Abdelbaki, H.; Zelenov, F. V.
}
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Phase transitions in a polycrystalline compound Ho0.1Mn0.9S / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // Solid State Commun. - 2023. - Vol. 364. - Ст. 115134, DOI 10.1016/j.ssc.2023.115134. - Cited References: 35. - The investigation of microstructural properties of the samples was carried out using equipment's (SEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center « Krasnoyarsk Science Center SB RAS». This work was supported by the Russian Science Foundation, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Science Foundation project no. 23-22-10016 «The colossal Nernst-Ettingshausen effect in manganese chalcogenides with rare earth substitution» . - ISSN 0038-1098. - ISSN 1879-2766
Кл.слова (ненормированные):
Semiconductors -- Structural transitions -- Electronic transitions -- Mott - Anderson model
Аннотация: Sequence of structural transitions in the magnetically ordered region and a displacement-type structural transition at T = 220 K accompanied by the variation in the thermal expansion coefficient, ultrasound attenuation coefficient, g factor, and polarization current in the polycrystalline compound Ho0.1Mn0.9S was found. The electronic transitions above room temperature were established on the basis of the measurements of the conductivity, ultrasound attenuation maxima, and IR spectra.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, 660036, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsky Rabochy Av., 31, Krasnoyarsk, 660014, Krasnoyarsk, Russia

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Zelenov, F. V.
}
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    A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs / Y. Chen, F. Liu, Z. Zhang [et al.] // J. Mater. Chem. C. - 2022. - Vol. 10, Is. 18. - P. 7049-7057, DOI 10.1039/d2tc00132b. - Cited References: 56. - This work was financially supported by grants from the National Natural Science Foundation of China (NSFC) (No. 51802359), the Joint Funds of NSFC and Yunnan Province (No. U1702254), and Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556) . - ISSN 2050-7534
   Перевод заглавия: Новый Mn4+-активированный фторидный красный люминофор Cs30(Nb2O2F9)9(OH)3ћH2O:Mn4+ с хорошей водонепроницаемостью для WLED
Кл.слова (ненормированные):
Crystal structure -- Fluorine compounds -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light emission -- Light emitting diodes -- Optical properties -- Phosphors -- Precipitation (chemical) -- Waterproofing
Аннотация: Red-light-emitting materials, as pivotal components of warm white light-emitting diodes (WLEDs), have drawn increasing public focus. Among these, Mn4+-doped red light-emitting fluorides have drawn considerable attention when combined with an InGaN chip; however, they suffer from poor water stability under humid conditions. In this work, a novel fluoride red phosphor, Cs30(Nb2O2F9)9(OH)3·H2O:xMn4+ (CNOFM), with good water resistance was synthesized for the first time using a facile co-precipitation method at ambient temperature. Experiments were implemented for the precise analysis of its crystal structure, optical properties, micro-morphology, thermal behavior, and waterproof properties. 6.66% Mn4+-doped CNOFM maintained a stable crystal structure and possessed strong PL intensity located at 633 nm with high color purity of 96%. CNOFM showed better thermal and waterproof stability compared with the commercial K2SiF6:Mn4+ red phosphor. Without any surface modifications, the PL intensity remained at about 83% of the initial value after immersion in water for 60 min, and the mechanism was investigated. Finally, a warm WLED with a CRI of 92.3 and CCT of 3271 K was fabricated using the CNOFM red phosphor.

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Держатели документа:
MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Sun Yat-Sen University, School of Chemistry/School of Marine Sciences, 510275/Zhuhai, Guangzhou, 519082, China
Laboratory of Crystal Physics, Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation
Institute of Resources Utilization and Rare Earth Development, Guangdong Academy of Sciences, Guangzhou, 510650, China

Доп.точки доступа:
Chen, Y.; Liu, F.; Zhang, Z.; Hong, J.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Bobrikov, I. A.; Shi, J.; Zhou, J.; Wu, M.
}
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    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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    Highly efficient Fe3+-doped A2 BB′O6 (A = Sr2+, Ca2+; B, B′ = In3+, Sb5+, Sn4+) broadband near-infrared-emitting phosphors for spectroscopic analysis / D. Liu, G. Li, P. Dang [et al.] // Light Sci. Appl. - 2022. - Vol. 11, Is. 1. - Ст. 112, DOI 10.1038/s41377-022-00803-x. - Cited References: 50. - This work was financially supported by the National Natural Science Foundation of China (NSFC Nos. 51720105015, 51932009, 51929201, 52072349), the Projects for Science and Technology Development Plan of Jilin Province (20210402046GH), and the Natural Science Foundation of Zhejiang Province (LR22E020004) . - ISSN 2095-5545
   Перевод заглавия: Высокоэффективные люминофоры A2BB'O6, легированные Fe3+ (A = Sr2+, Ca2+; B, B' = In3+, Sb5+, Sn4+), широкополосные люминофоры ближнего инфракрасного диапазона для спектроскопического анализа
Рубрики:
Optical properties of diamond
   Inorganic LEDs
Кл.слова (ненормированные):
Antimony compounds -- Efficiency -- III-V semiconductors -- Light emission -- Near infrared spectroscopy -- Optical properties -- Phosphors -- Spectroscopic analysis
Аннотация: Near-infrared (NIR)-emitting phosphor-converted light-emitting diodes have attracted widespread attention in various applications based on NIR spectroscopy. Except for typical Cr3+-activated NIR-emitting phosphors, next-generation Cr3+-free NIR-emitting phosphors with high efficiency and tunable optical properties are highly desired to enrich the types of NIR luminescent materials for different application fields. Here, we report the Fe3+-activated Sr2−yCay(InSb)1−zSn2zO6 phosphors that exhibit unprecedented long-wavelength NIR emission. The overall emission tuning from 885 to 1005 nm with broadened full-width at half maximum from 108 to 146 nm was realized through a crystallographic site engineering strategy. The NIR emission was significantly enhanced after complete Ca2+ incorporation owing to the substitution-induced lower symmetry of the Fe3+ sites. The Ca2InSbO6:Fe3+ phosphor peaking at 935 nm showed an ultra-high internal quantum efficiency of 87%. The as-synthesized emission-tunable phosphors demonstrated great potential for NIR spectroscopy detection. This work initiates the development of efficient Fe3+-activated broadband NIR-emitting phosphors and opens up a new avenue for designing NIR-emitting phosphor materials.

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Держатели документа:
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
University of Science and Technology of China, Hefei, 230026, China
Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China
Zhejiang Institute, China University of Geosciences, Hangzhou, 311305, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Research and Development Department, Kemerovo State University, Kemerovo, 650000, Russian Federation
School of Material Science and Engineering, Shandong University, Jinan, 266071, China

Доп.точки доступа:
Liu, D.; Li, G.; Dang, P.; Zhang, Q.; Wei, Y.; Qiu, L.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Lian, H.; Shang, M.; Lin, J.
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Evolution of structural, thermal, optical, and vibrational properties of Sc2S3, ScCuS2, and BaScCuS3 semiconductors / N. O. Azarapin, A. S. Oreshonkov, I. A. Razumkova [et al.] // Eur. J. Inorg. Chem. - 2021. - Vol. 2021, Is. 33. - P. 3355-3366, DOI 10.1002/ejic.202100292. - Cited References: 50. - The work was partially carried out using the resources of the Research Resource Center "Natural Resources Management and Physico-Chemical Research" (Tyumen University) with financial support from the Ministry of Science and Higher Education of the Russian Federation (contract No. 05.594.21.0019, UIN RFMEFI59420X0019). The Raman spectroscopic studies were carried out at the collaborative research center for vibrational spectroscopy at ISSC UB RAS (Ekaterinburg, Russia). I.I.L. would like to acknowledge the support from the Research Program No. AAAA-A19-119031890025-9 (ISSC UB RAS). The use of the equipment of Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center "Krasnoyarsk Science Center SB RAS" is acknowledged." The authors are grateful to Dr. Elena V. Vladimirova (ISSC UB RAS) for technical assistance . - ISSN 1434-1948. - ISSN 1099-0682

РУБ Chemistry, Inorganic & Nuclear
Рубрики:
RARE-EARTH
QUATERNARY CHALCOGENIDES
CRYSTAL-STRUCTURES
Кл.слова (ненормированные):
Complex sulfides -- Density functional calculations -- DTA -- Polychalcogenides -- Rare earths
Аннотация: In the present work, we report on the synthesis of Sc2S3, ScCuS2 and BaScCuS3 powders using a method based on oxides sulfidation and modification of their properties. The crystal structures and morphology of samples are verified by XRD and SEM techniques. Thermal stability has been studied by DTA which has revealed that Sc2S3 decomposes to ScS through melting at 1877 K. ScCuS2 and BaScCuS3 melt incongruently at temperatures of 1618 K and 1535 K, respectively. The electronic structure calculations show that the investigated compounds are semiconductors with indirect band gap (Eg). According to the diffuse reflection spectroscopy, Sc2S3, ScCuS2 and BaScCuS3 are wide-bandgap semiconductors featured the Eg values of 2.53 eV, 2.05 eV and 2.06 eV, respectively. The band gap decreases with the introduction of copper (I) and barium cations into the crystal structure of the compounds. Variation of local structure has been verified by Raman and infrared spectroscopy. The calculated vibrational modes of ScCuS2 correspond to CuS4 and Sc−S layer vibrations, even though ScS6 octahedra-like structural units can be found in the structure.

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Держатели документа:
Tyumen State Univ, Dept Inorgan & Phys Chem, Tyumen 625003, Russia.
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Lab Mol Spect, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Sch Engn & Construct, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Nanotechnol Spect & Quantum Chem, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Inst Chem & Chem Technol, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Ural Branch, Inst Solid State Chem, Ekaterinburg 620990, Russia.

Доп.точки доступа:
Azarapin, N. O.; Oreshonkov, A. S.; Орешонков, Александр Сергеевич; Razumkova, I. A.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Maximov, N. G.; Leonidov, I. I.; Shestakov, N. P.; Шестаков, Николай Петрович; Andreev, O. V.; Ministry of Science and Higher Education of the Russian Federation [05.594.21.0019, UIN RFME-FI59420X0019]; ISSC UB RAS [AAAA-A19-119031890025-9]
}
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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10.

Romanova, O. B.
Effect of electron and hole doping on the transport characteristics of chalcogenide systems / O. B. Romanova, S. S. Aplesnin, L. V. Udod // Phys. Solid State. - 2021. - Vol. 63, Is. 5. - P. 754-757, DOI 10.1134/S1063783421050152. - Cited References: 21. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
MAGNETIC-PROPERTIES
TRANSITION
Кл.слова (ненормированные):
semiconductors -- conductivity -- Hall constant -- mobility
Аннотация: The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80-400 K in a magnetic field of 12 kOe. Using the I-V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.

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Публикация на русском языке Романова, Оксана Борисовна. Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем [Текст] / О. Б. Романова, С. С. Аплеснин, Л. В. Удод // Физ. тверд. тела. - 2021. - Т. 63 Вып. 5. - С. 606-609

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Романова, Оксана Борисовна; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
}
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11.

Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P. 1100-1103, DOI 10.3103/S1062873820090051. - Cited References: 11. - This work was supported by the RF Ministry of Science and Higher Education as part of State Task no. FZGM-2020-0007 . - ISSN 1062-8738
Кл.слова (ненормированные):
After-heat treatment -- Binary alloys -- Film preparation -- II-VI semiconductors -- Ion beams -- Magnetic semiconductors -- Multilayers -- Oxide minerals -- Semiconducting indium compounds -- Semiconducting silicon compounds -- Semiconducting zinc compounds -- Silica -- Silicon -- Sputtering -- Wide band gap semiconductors -- Zinc oxide
Аннотация: An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40Fe40B20)34(SiO2)66 composite layer and ZnO and In2O3 semiconductor spacers. The sample structure in the initial state and after heat treatment is studied by means of X-ray diffraction. It is shown that the samples are stable at temperatures of up to 500°С. Zn2SiO4, InBO3, CoFe, and In2O3 phases form during annealing.

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Публикация на русском языке Влияние термообработки на стабильность наноразмерных многослойных структур (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Изв. РАН. Сер. физич. - 2020. - Т. 84 № 9. - С. 1293-1296

Держатели документа:
Voronezh State Technical University, Voronezh, 394026, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Y. E.; Kashirin, M. A.; Sitnikov, A. V.; Chehonadskih, M. V.; Yanchenko, L. I.
}
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12.

    Structure and Magnetic Properties of the FeCo–C Films Reduced by Carbohydrates / E. A. Denisova, L. A. Chekanova, S. V. Komogortsev [et al.] // Semiconductors. - 2020. - Vol. 54, Is. 14. - P. 1840-1842, DOI 10.1134/S1063782620140079. - Cited References: 9. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure) . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Структура и магнитные свойства пленок FeCo–C, восстановленных углеводами
Кл.слова (ненормированные):
FeCo–C alloy -- electroless deposition -- magnetic properties
Аннотация: The structural and magnetic properties of FeCo–C films produced by electroless plating with differentcarbohydrates as reducing agents have been investigated. The surface morphology and coercivities of FeCo–C films are dependent on the iron content and type of reducing agent. The local magnetic anisotropy field value increases with a decrease in Fe content. For all systems, deposits with good soft magnetic properties were obtained, with coercivities less than 12 Oe and saturation magnetizations close to 240 emu/g for FeCo–C film with 30% cobalt. The best soft magnetic properties corresponded to the deposits with bcc structure and grain sizes less than 20 nm.

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Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, 660041 Russia
Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Chekanova, L. A.; Чеканова, Лидия Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Nemtsev, I. V.; Iskhakov, R. S.; Исхаков, Рауф Садыкович
}
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13.

Electrical properties of thin In2O3/C films / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P. 374-381, DOI 10.1134/S0020168520040019. - Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6). . - ISSN 0020-1685. - ISSN 1608-3172

РУБ Materials Science, Multidisciplinary
Рубрики:
SEMICONDUCTORS
GAS
Кл.слова (ненормированные):
amorphous and crystalline structures -- electrical resistance -- heat treatment
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h <70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.

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Публикация на русском языке Электрические свойства тонких пленок In2O3/С [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Неорган. матер. - 2020. - Т. 56 № 4. - С. 393-401

Держатели документа:
Voronezh State Tech Univ, Moskovskii Pr 14, Voronezh 394026, Russia.
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk Sci Ctr,Fed Res Ctr, Akademgorodok 50-38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Yu. E.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.; Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
}
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14.

    Аверьянов, Евгений Михайлович.
    Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.41. - Библиогр.: 7 . - ISSN 1991-3966
   Перевод заглавия: New methods for studying the orientation order of uniaxial molecular films on the base of optical data
Кл.слова (ненормированные):
тонкие молекулярные пленки -- органические полупроводники -- PTCDA -- ориентационный порядок -- эффекты локального поля -- molecular thin films -- organic semiconductors -- PTCDA -- orientation order -- local-field effects
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).
The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.

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Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, 50, строение № 38, 660036 Красноярск, Россия

Доп.точки доступа:
Aver'yanov, E. M.

}
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15.

    Atomic layer deposition ZnO on porous Al2O3 nanofibers film / A. S. Voronin, A. N. Masiygin, M. S. Molokeev, S. V. Khartov // J. Phys. Conf. Ser. - 2020. - Vol. 1679, Is. 2. - Ст. 022072DOI 10.1088/1742-6596/1679/2/022072. - Cited References: 10. - Studies by scanning electron microscopy and X-ray powder diffraction were performed on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS». The transmission electron microscopy investigations were conducted in the SFU Joint Scientific Center supported by the State assignment (#FSRZ-2020-0011) of the Ministry of Science and Higher Education of the Russian Federation
   Перевод заглавия: Нанесение атомного слоя ZnO на пленку из пористых нановолокон Al2O3
Кл.слова (ненормированные):
Alumina -- Aluminum oxide -- Atomic layer deposition -- Atoms -- Composite structures -- High resolution transmission electron microscopy -- II-VI semiconductors -- Nanofibers -- Oxide minerals -- Scanning electron microscopy
Аннотация: The paper presents the results of the formation and study of the morphological and structural characteristics of the mesoporous ZnO / Al2O3 nanofibers film (ZANF). The deposition of a ZnO layer on Al2O3 nanofibers film (ANF) ~ 1 µm thick was carried out by the method of atomic layer deposition. The morphology of the mesoporous composite layer ZnO / Al2O3 (ZANF) has been studied by scanning and transmission electron microscopy. It is shown that in the process of atomic layer deposition, the ZnO layer grows according to the Stranski-Krastanov mechanism. A ZnO layer less than 5 nm thick gives an island structure in which Al2O3 nanofibers are uniformly coated with ZnO particles, an increase in the ZnO layer thickness to 15 nm demonstrates a continuous coating of Al2O3 nanofibers. The system has a core-shell structure. The resulting composite structures are promising for applications in photocatalysis and gas sensing.

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Federal Research Center Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences (KSC SB RAS), Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Reshetnev Siberian State University Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics (FRC KSC SB RAS), Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Voronin, A. S.; Masiygin, A. N.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Khartov, S. V.; International Scientific Conference on Applied Physics, Information Technologies and Engineering(2nd ; 25 September - 4 October 2020 ; Krasnoyarsk, Russian Federation)
}
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16.

Collective Spin Glass State in Nanoscale Particles of Ferrihydrite / S. V. Stolyar, R. N. Yaroslavtsev, V. P. Ladygina [et al.] // Semiconductors. - 2020. - Vol. 54, Is. 12. - P. 1710-1712DOI 10.1134/S1063782620120362. - Cited References: 16. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 19-42-240012 r_a “Magnetic resonance in ferrihydrite nanoparticles: Effects associated with the “core–shell” structure). This work was supported by a grant from the President of the Russian Federation for state support of young Russian scientists – candidates of sciences no. MK-1263.2020.3
Кл.слова (ненормированные):
nanoparticles -- ferrihydrite -- magnetic anisotropy -- magnetic resonance
Аннотация: Ferromagnetic resonance was used to study three types of ferrihydrite nanoparticles: nanoparticles formed as a result of the cultivation of microorganisms Klebsiella oxytoca; chemically prepared ferrihydrite nanoparticles; chemically prepared ferrihydrite nanoparticles doped with Cu. It is established from the ferromagnetic resonance data that the frequency-field dependence (in the temperature range ТP ‹ T ‹ T*) is described by the expression: 2πν/γ ⁼ НR + HA(T = 0)(1 – T/Т*), where γ is the gyromagnetic ratio, HR is the resonance field. The induced anisotropy HA is due to the spin-glass state of the near-surface regions. TP temperature characterizes the energy of the interparticle interaction of nanoparticles.

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Держатели документа:
Kirensky Institute of Physics, SB Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Stolyar, S. V.; Столяр, Сергей Викторович; Yaroslavtsev, R. N.; Ярославцев, Роман Николаевич; Ladygina, V. P.; Balaev, D. A.; Балаев, Дмитрий Александрович; Pankrats, A. I.; Панкрац, Анатолий Иванович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; International Symposium “Nanostructures: Physics and Technology”(28th ; Sept 28 - Oct 2, 2020 ; Minsk, Republic of Belarus)
}
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17.

    Engineering of K3YSi2O7 to Tune Photoluminescence with Selected Activators and Site Occupancy / J. Qiao [et al.] // Chem. Mater. - 2019. - Vol. 31, Is. 18. - P. 7770-7778, DOI 10.1021/acs.chemmater.9b02990. - Cited References: 48. - This work was supported by the National Natural Science Foundation of China (Nos. 51722202, 51972118 and 51572023), Natural Science Foundations of Beijing (2172036), Fundamental Research Funds for the Central Universities (FRF-TP-18-002C1), and Guangdong Provincial Science & Technology Project (2018A050506004). This work was also supported by the National Science Foundation, Ceramics Program (No. 1911372), and the computational resources were provided by the Extreme Science and Engineering Discovery Environment (XSEDE) supported by the National Science Foundation (No. ACI-1548562). . - ISSN 0897-4756
   Перевод заглавия: Производство K3YSi2O7 для настройки фотолюминесценции с выбранными активаторами и заселением позиций
Кл.слова (ненормированные):
Citrus fruits -- Density functional theory -- Doping (additives) -- Energy gap -- Gallium alloys -- III-V semiconductors -- Indium alloys -- Light -- Light emitting diodes -- Metal ions -- Phosphors -- Photoluminescence -- Rare earths -- Rietveld refinement -- Semiconductor alloys
Аннотация: The luminescence of rare earth ions (Eu2+, Ce3+, and Eu3+)-doped inorganic solids is attractive for the screening of phosphors applied in solid-state lighting and displays and significant to probe the occupied crystallographic sites in the lattice also offering new routes to photoluminescence tuning. Here, we report on the discovery of the Eu- and Ce-activated K3YSi2O7 phosphors. K3YSi2O7:Eu is effectively excited by 450 nm InGaN blue light-emitting diodes (LEDs) and displays an orange-red emission originated from characteristic transitions of both Eu2+ and Eu3+, while K3YSi2O7:Ce3+ shows green emission upon 394 nm near-ultraviolet (NUV) light excitation. Rietveld refinement verifies the successful doping of the activators, and density functional theory (DFT) calculations further support that Eu2+ occupies both K1 and Y2 crystallographic sites, while Ce3+ and Eu3+ only occupy the Y2 site; hence, the broad-band red emission of Eu2+ are attributed to a small DFT band gap (3.69 eV) of K3YSi2O7 host and a selective occupancy of Eu2+ in a highly distorted K1 site and a high crystal field splitting around Y2 sites. The white LEDs device utilizing orange-red-emitting K3YSi2O7:Eu and green-emitting K3YSi2O7:Ce3+ exhibits an excellent CRI of 90.1 at a correlated color temperature of 4523 K. Our work aims at bridging multivalent Eu2+/Eu3+ and Ce3+ site occupancy in the same host to realize photoluminescence tuning and especially exposes new ways to explore new phosphors with multicolor emission pumped by blue and NUV light for white LEDs.

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School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
Department of Nanoengineering, University of California, San Diego, 9500 Gilman Drive, San Diego, CA 92093, United States
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
National Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China

Доп.точки доступа:
Qiao, J.; Amachraa, M.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Chuang, Y. -C.; Ong, S. P.; Zhang, Q.; Xia, Z.
}
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18.

Bikbaev, R. G.
Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons / R. G. Bikbaev, S. Ya Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P. 2817-2823, DOI 10.1364/JOSAB.36.002817. - Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006. . - ISSN 0740-3224
Кл.слова (ненормированные):
Aluminum oxide -- II-VI semiconductors -- Indium compounds -- Infrared devices -- Optical films -- Phonons -- Photons -- Plasmons -- Q factor measurement -- Tin oxides -- Transfer matrix method -- Transparent conducting oxides -- Zinc oxide
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович
}
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19.

Mikhaleva, N. S.
Theoretical investigation of NiI2 based bilayer heterostructures / N. S. Mikhaleva, M. A. Visotin, Z. I. Popov // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 10-16, DOI 10.4028/www.scientific.net/KEM.806.10. - Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Кл.слова (ненормированные):
2D semiconductors -- Ab initio calculations -- Heterostructures -- NiI2 -- Transition metal dichalcogenides
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland

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Держатели документа:
Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Popov, Z. I.; Попов, Захар Иванович; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
}
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20.

Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states / D. A. Smolyakov [et al.] // Thin Solid Films. - 2019. - Vol. 671. - P. 18-21, DOI 10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance -- Spintronics -- Metal/insulator/semiconductor structures -- Nanosized semiconductors
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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