Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chen Y., Liu F., Zhang Z., Hong J., Molokeev M. S., Bobrikov I. A., Shi J., Zhou J., Wu M.
Заглавие : A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs
Место публикации : J. Mater. Chem. C. - 2022. - Vol. 10, Is. 18. - P.7049-7057. - ISSN 20507534 (ISSN), DOI 10.1039/d2tc00132b
Примечания : Cited References: 56. - This work was financially supported by grants from the National Natural Science Foundation of China (NSFC) (No. 51802359), the Joint Funds of NSFC and Yunnan Province (No. U1702254), and Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556)
Аннотация: Red-light-emitting materials, as pivotal components of warm white light-emitting diodes (WLEDs), have drawn increasing public focus. Among these, Mn4+-doped red light-emitting fluorides have drawn considerable attention when combined with an InGaN chip; however, they suffer from poor water stability under humid conditions. In this work, a novel fluoride red phosphor, Cs30(Nb2O2F9)9(OH)3·H2O:xMn4+ (CNOFM), with good water resistance was synthesized for the first time using a facile co-precipitation method at ambient temperature. Experiments were implemented for the precise analysis of its crystal structure, optical properties, micro-morphology, thermal behavior, and waterproof properties. 6.66% Mn4+-doped CNOFM maintained a stable crystal structure and possessed strong PL intensity located at 633 nm with high color purity of 96%. CNOFM showed better thermal and waterproof stability compared with the commercial K2SiF6:Mn4+ red phosphor. Without any surface modifications, the PL intensity remained at about 83% of the initial value after immersion in water for 60 min, and the mechanism was investigated. Finally, a warm WLED with a CRI of 92.3 and CCT of 3271 K was fabricated using the CNOFM red phosphor.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hu T., Molokeev M. S., Xia Z., Zhang Q.
Заглавие : Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance
Место публикации : J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P.14594-14600. - ISSN 20507534 (ISSN), DOI 10.1039/c9tc05354a
Примечания : Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980).
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Smolyarova T. E.
Заглавие : Alternative technology for creating nanostructures using Dip Pen Nanolithography
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P.636-638. - ISSN 1063-7826, DOI 10.1134/S1063782618050202. - ISSN 1090-6479(eISSN)
Примечания : Cited References:9. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Аннотация: For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Voronin A. S., Masiygin A. N., Molokeev M. S., Khartov S. V.
Заглавие : Atomic layer deposition ZnO on porous Al2O3 nanofibers film
Коллективы : International Scientific Conference on Applied Physics, Information Technologies and Engineering
Место публикации : J. Phys. Conf. Ser. - 2020. - Vol. 1679, Is. 2. - Ст.022072. - DOI 10.1088/1742-6596/1679/2/022072
Примечания : Cited References: 10. - Studies by scanning electron microscopy and X-ray powder diffraction were performed on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS». The transmission electron microscopy investigations were conducted in the SFU Joint Scientific Center supported by the State assignment (#FSRZ-2020-0011) of the Ministry of Science and Higher Education of the Russian Federation
Аннотация: The paper presents the results of the formation and study of the morphological and structural characteristics of the mesoporous ZnO / Al2O3 nanofibers film (ZANF). The deposition of a ZnO layer on Al2O3 nanofibers film (ANF) ~ 1 µm thick was carried out by the method of atomic layer deposition. The morphology of the mesoporous composite layer ZnO / Al2O3 (ZANF) has been studied by scanning and transmission electron microscopy. It is shown that in the process of atomic layer deposition, the ZnO layer grows according to the Stranski-Krastanov mechanism. A ZnO layer less than 5 nm thick gives an island structure in which Al2O3 nanofibers are uniformly coated with ZnO particles, an increase in the ZnO layer thickness to 15 nm demonstrates a continuous coating of Al2O3 nanofibers. The system has a core-shell structure. The resulting composite structures are promising for applications in photocatalysis and gas sensing.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ERUKHIMOV M. S., Ovchinnikov S. G.
Заглавие : CARRIER ENERGY FLUCTUATION SHIFT IN WIDE-GAP ANTIFERROMAGNETIC SEMICONDUCTORS
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1986. - Vol. 28, Is. 8. - P2306-2309. - ISSN 0367-3294
Примечания : Cited References: 9
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density
Место публикации : Phys. Solid State: AMER INST PHYSICS, 1999. - Vol. 41, Is. 1. - P59-66. - ISSN 1063-7834, DOI 10.1134/1.1130731
Примечания : Cited References: 26
Предметные рубрики: QUANTUM TEMPERATURE OSCILLATIONS
MAGNETIC SEMICONDUCTORS
HGCR2SE4
RESISTIVITY
FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kovaleva E. A., Kuzubov A. A., Avramov P. V., Kuklin A. V., Mikhaleva N. S., Krasnov P. O.
Заглавие : Characterization of LSMO/C60 spinterface by first-principle calculations
Место публикации : Org. Electron.: Phys. Mater. Appl.: Elsevier, 2016. - Vol. 37. - P.55-60. - ISSN 15661199 (ISSN), DOI 10.1016/j.orgel.2016.06.021
Примечания : Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers.
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
ORGANIC SPIN-VALVES
BASIS-SET
SEMICONDUCTORS
INJECTION
SPINTRONICS
TEMPERATURE
ALGORITHM
Ключевые слова (''Своб.индексиров.''): c60--lsmo--spinterface--dft--magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Stolyar S. V., Yaroslavtsev R. N., Ladygina V. P., Balaev D. A., Pankrats A. I., Iskhakov R. S.
Заглавие : Collective Spin Glass State in Nanoscale Particles of Ferrihydrite
Коллективы : International Symposium “Nanostructures: Physics and Technology”
Место публикации : Semiconductors. - 2020. - Vol. 54, Is. 12. - P.1710-1712. - DOI 10.1134/S1063782620120362
Примечания : Cited References: 16. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 19-42-240012 r_a “Magnetic resonance in ferrihydrite nanoparticles: Effects associated with the “core–shell” structure). This work was supported by a grant from the President of the Russian Federation for state support of young Russian scientists – candidates of sciences no. MK-1263.2020.3
Аннотация: Ferromagnetic resonance was used to study three types of ferrihydrite nanoparticles: nanoparticles formed as a result of the cultivation of microorganisms Klebsiella oxytoca; chemically prepared ferrihydrite nanoparticles; chemically prepared ferrihydrite nanoparticles doped with Cu. It is established from the ferromagnetic resonance data that the frequency-field dependence (in the temperature range ТP ‹ T ‹ T*) is described by the expression: 2πν/γ ⁼ НR + HA(T = 0)(1 – T/Т*), where γ is the gyromagnetic ratio, HR is the resonance field. The induced anisotropy HA is due to the spin-glass state of the near-surface regions. TP temperature characterizes the energy of the interparticle interaction of nanoparticles.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovskii G. A., Ryabinkina L. I., Kiselev N. I., Velikanov D. A., Bovina A. F., Abramova G. M.
Заглавие : Colossal magnetoresistance of FexMn1-xS magnetic semiconductors
Место публикации : JETP Letters. - 1999. - Vol. 69, Is. 12. - P.949-953. - ISSN 0021-3640, DOI 10.1134/1.568118
Примечания : Cited References: 8
Предметные рубрики: MANGANITES
Аннотация: The magnetic, electric, magnetoresistive, and structural properties are investigated in the sulfide solid solutions FexMn1-xS, which are based on the antiferromagnetic semiconductor alpha-MnS (the fcc NaCl lattice). Colossal negative magnetoresistance (delta(H)similar to-83% at 160 K for x similar to 0.29), comparable to that observed in La-Ca-Mn-O polycrystals and films (delta(H)similar to-90% at 100 K and 40 kOe), is observed in compounds with intermediate concentrations 0.26 x 0.4, corresponding to the region of incipient ferromagnetism. (C) 1999 American Institute of Physics. [S0021-3640(99)01212-8].
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N.
Заглавие : Conductivity of HoxMn1-xS magnetic semiconductors with orbital ordering
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.47
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Tarasov A. S., Sokolov A. Е.
Заглавие : Dip-Pen Nanolithography method for fabrication of biofunctionalized magnetic nanodiscs applied in medicine
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [17-42-240080, 16-42-243046, 16-42-242036]; Russian Federation [NSh-7559.2016.2]
Место публикации : Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P.675-677. - ISSN 1063-7826, DOI 10.1134/S1063782618050305. - ISSN 1090-6479(eISSN)
Примечания : Cited References:22. - The study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 17-42-240080, 16-42-243046, 16-42-242036 and the Grant of the President of the Russian Federation no. NSh-7559.2016.2.
Предметные рубрики: DRUG-DELIVERY
FORCE MICROSCOPY
NANOPARTICLES
HYPERTHERMIA
THERAPY
Аннотация: The magnetic properties of ferromagnetic nanodiscs coated with gold, manufactured using the Dip-Pen Nanolithography method, and were studied by atomic-force and magnetic force microscopy methods. The magnetic discs (dots) are represented as nanoagents (nanorobots) applied in medicine for the cancer cell destruction. The motivation of this work stem from the necessity of the understanding of the magnetization distribution in ferromagnetic discs that is crucial for their application in biomedicine. We have performed the theoretical calculations in order to compare the theoretical image contrast to experimental results. Herein, we report about the fabrication and analysis of biocompatible ferromagnetic nanodiscs with the homogenous magnetized state.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Erementchouk M. V., Kusmartsev F. V.
Заглавие : Direct-current generation due to wave mixing in semiconductors
Место публикации : Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P.595-600. - ISSN 0295-5075, DOI 10.1209/epl/i1999-00430-0
Примечания : Cited References: 34
Предметные рубрики: BLOCH OSCILLATOR
SUPERLATTICES
PHOTOCURRENT
TRANSPORT
FREQUENCY
FIELD
RECTIFIERS
EMISSION
CHAOS
GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Knyazev, Yu. V., Kazak N. V., Platunov M. S., Ivanova N. B., Bezmaternykh L. N., Arauzo A., Bartolome J., Ovchinnikov S. G.
Заглавие : Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 642. - P.232-237. - ISSN 0925, DOI 10.1016/j.jallcom.2015.04.056. - ISSN 18734669(eISSN)
Примечания : Cited References:32. - This work has been financed by Council for Grants of the President of the Russian Federation (Project Nos. NSh-2886.2014.2, SP-938.2015.5), Russian Foundation for Basic Research (Project Nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of coauthors (M.S.P.) was supported by the grant of KSAI "Krasnoyarsk Regional Fund of Supporting Scientific and Technological Activities'' and by the Program of Foundation for Promoting the Development of Small Enterprises in Scientific and Technical Sphere ("UMNIK'' program). Financial support from the Spanish MINECO MAT11/23791 and DGA IMANA project E-34 is acknowledged.
Предметные рубрики: WARWICKITE
Fe2OBO3
FeBO3
Ключевые слова (''Своб.индексиров.''): transition metal alloys and compounds--disordered system--semiconductors--electrical transport
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1−xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.Температурная зависимость сопротивления монокристаллических образцов Mg1- XCoxFeBO4 с х = 0,0; 0.5, 1.0 исследована в интервале температур (210-400 К). Было установлено, что проводимость регулируется Мотт-переменной длиной прыжка (VRH) в области низких температур (T = 210-270 К) и термо-активационным механизмом в области высоких температур (Т = 280-400 К). Микроскопические электронные параметры, такие как плотность локализованных состояний вблизи уровня Ферми, длины локализации, длина прыжка, и энергия активации были получены. Изменение энергии активации наблюдается при высокой температурном Диапазоне, что было связано с локальными искажениями структуры вокруг Fe и Co атомов. Сложный механизм поведения переноса заряда обсуждается на основе двух подходов: атомный беспорядок и электронная корреляция.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : GAVRICHKOV V. A.
Заглавие : DISTORTION OF A COMPLEX DEFECT WITH A WEAK BINDING
Место публикации : Semiconductors: AMER INST PHYSICS, 1993. - Vol. 27, Is. 10. - P921-924. - ISSN 1063-7826
Примечания : Cited References: 6
Аннотация: A simple non-self-consistent approach is used in an analysis of the distortion of a complex defect characterized by a weak binding. The dependences of the magnitude of the distortion of a two-component defect on the position of its local population levels and on the number of carriers in a band are given.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : KARYAGIN V. V., LYAPILIN I. I., DYAKIN V. V.
Заглавие : DRAG THERMOELECTRIC-POWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GAAIAS HETEROSTRUCTURE
Место публикации : SOVIET PHYSICS SEMICONDUCTORS-USSR: AMER INST PHYSICS, 1988. - Vol. 22, Is. 8. - P954-955. - ISSN 0038-5700
Примечания : Cited References: 3
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Udod L. V.
Заглавие : Effect of electron and hole doping on the transport characteristics of chalcogenide systems
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 5. - P.754-757. - ISSN 1063-7834, DOI 10.1134/S1063783421050152. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 21. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005
Предметные рубрики: MAGNETIC-PROPERTIES
TRANSITION
Аннотация: The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80-400 K in a magnetic field of 12 kOe. Using the I-V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Rautskii M. V., Yakovlev I. A., Volochaev M. N.
Заглавие : Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001)
Коллективы : International Symposium on Nanostructures - Physics and Technology , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243060, 16-42-243035]; Russian Foundation for Basic Research, Government of the Republic of Khakassia [17-42-190308]
Место публикации : Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P.654-659. - ISSN 1063-7826, DOI 10.1134/S1063782618050330. - ISSN 1090-6479(eISSN)
Примечания : Cited References:31. - The work was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects no. 16-42-243060 and 16-42-243035 and Russian Foundation for Basic Research, Government of the Republic of Khakassia, research project no. 17-42-190308. We also thank L.A. Solovyov for his assistance in XRD analysis.
Предметные рубрики: BETA-FESI2 THIN-FILMS
LOW-TEMPERATURE
GROWTH
FESI2
SI(100)
SI(111)
Аннотация: Self-assembled growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)-or (111)-textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi2(001)/Si(100) and α-FeSi2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi2/p-Si interfaces.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin Y. E., Kashirin M. A., Sitnikov A. V., Chehonadskih M. V., Yanchenko L. I.
Заглавие : Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P.1100-1103. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873820090051
Примечания : Cited References: 11. - This work was supported by the RF Ministry of Science and Higher Education as part of State Task no. FZGM-2020-0007
Аннотация: An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40Fe40B20)34(SiO2)66 composite layer and ZnO and In2O3 semiconductor spacers. The sample structure in the initial state and after heat treatment is studied by means of X-ray diffraction. It is shown that the samples are stable at temperatures of up to 500°С. Zn2SiO4, InBO3, CoFe, and In2O3 phases form during annealing.
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