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1.


   
    Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties / A. S. Tarasov, A. V. Lukyanenko, I. A. Yakovlev [et al.] // Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P. S133-S146, DOI 10.1134/S1062873823704518. - Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculations. - Supported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science . - ISSN 1062-8738. - ISSN 1934-9432
Кл.слова (ненормированные):
iron silicide -- manganese germanide -- MBE -- FMR -- electronic transport -- spintronics
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041, Krasnoyarsk, Russia
Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Sukhachev, A. L.; Сухачев, Александр Леонидович; Shanidze, L. V.; Шанидзе, Лев Викторович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович
}
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2.


   
    Ferromagnetic silicides and germanides epitaxial films and multilayered hybryd structures: synthesys, magnetic and transport properties / I. A. Tarasov, I. A. Yakovlev, M. V. Rautskii [et al.] // VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022) : Book of abstracts / program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect. : Spintronics and magnetic nanostructures. - Ст. A.O2. - P. 31-32. - Cited References: 10. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory . - ISBN 978-5-94469-051-7

Материалы симпозиума, ,
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Krasnoyarsk Scientiؤc Center, SB RAS, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \program com.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Sukhachev, A. L.; Сухачев, Александр Леонидович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН; Казанский (Приволжский) федеральный университет; Euro-Asian Symposium "Trends in MAGnetism"(8 ; 2022 ; Aug. ; 22-26 ; Kazan); "Trends in MAGnetism", Euro-Asian Symposium(8 ; 2022 ; Aug. ; 22-26 ; Kazan)
}
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3.


   
    Tailoring the preferable orientation relationship and shape of α-FeSi2nanocrystals on Si(001): The impact of gold and the Si/Fe flux ratio, and the origin of α/Si boundaries / I. A. Tarasov, T. E. Smolyarova, I. V. Nemtsev [et al.] // CrystEngComm. - 2020. - Vol. 22, Is. 23. - P. 3943-3955, DOI 10.1039/d0ce00399a. - Cited References: 52. - The experimental part of the reported study was funded by the Russian Science Foundation, project no. 16-13-00060-Π. Theoretical analysis of the ORs of the α-FeSi2 nanocrystals grown was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science via research project No. 18-42-243013. We also acknowledge the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for support with carrying out the microscopic investigations. I. A. Tarasov personally thanks M. A. Visotin for continuous fruitful discussion about the energetics of the formation of the α-FeSi2 nanocrystals . - ISSN 1466-8033
Кл.слова (ненормированные):
Gold -- Morphology -- Nanocrystals -- Silicides
Аннотация: The growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratios via molecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphology at a given Si/Fe flux ratio. α-FeSi2 free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an α(001)//Si(001) basic OR under gold-assisted conditions and an α(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of α-FeSi2 nanocrystals grown. Three types of interfaces typical for nanoplates with an α(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of α-FeSi2 nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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4.


   
    Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing / I. V. Chepkasov, V. S. Baidyshev, E. V. Sukhanova [et al.] // Appl. Surf. Sci. - 2020. - Vol. 527. - Ст. 146736, DOI 10.1016/j.apsusc.2020.146736. - Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009) . - ISSN 0169-4332
Кл.слова (ненормированные):
Fe3Si -- Epitaxial films -- Sputtering -- Annealing -- MD simulation
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.

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Держатели документа:
Skolkovo Institute of Science and Technology, 30, bld. 1 Bolshoy Boulevard, Moscow, 121205, Russian Federation
Katanov Khakas State University, 90 Lenin pr., Abakan, 655017, Russian Federation
Moscow Institute of Physics and Technology (National Research University), 9 Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russian Federation
Emanuel Institute of Biochemical Physics RAS, Moscow, 199339, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 50/38 Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation
EK-MFA, Dept. of Nanostructures, Budapest, Hungary
National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow, 119049, Russian Federation
Plekhanov Russian University of Economics, 36 Stremyanny per., Moscow, 199339, Russian Federation

Доп.точки доступа:
Chepkasov, I. V.; Baidyshev, V. S.; Sukhanova, E. V.; Visotin, M. A.; Высотин, Максим Александрович; Sule, P.; Popov, Z. I.
}
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5.


   
    Growth and thermoelectric properties of composite thin films based on higher iron and manganese silicides / I. A. Tarasov, I. A. Yakovlev, M. N. Volochaev [et al.] // The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials : Proceedings. - VLadivostok : Dalnauka Publishing, 2020. - Ст. III.30.04p. - P. 90 . - ISBN 978-5-8044-1698-1

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Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Nazarova, Z.I.; Nazarov, A.; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(5 ; 2020 ; 30 Jul - 3 Aug ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(5 ; 2013 ; 30 июля - 3 авг. ; Владивосток)
}
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6.


   
    Electronic structure and magnetic properties of iron silicides / S. G. Ovchinnikov, V. S. Zhandun, N. G. Zamkova [et al.] // The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials : Proceedings. - VLadivostok : Dalnauka Publishing, 2020. - Ст. PS.03.04i. - P. 26 . - ISBN 978-5-8044-1698-1

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Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Maximova, O. A.; Максимова, Ольга Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Vysotin, M. A.; Высотин, Максим Александрович; Sandalov, I. S.; Сандалов, Игорь Семёнович; Asian School-Conference on Physics and Technology of Nanostructured Materials(5 ; 2020 ; 30 Jul - 3 Aug ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(5 ; 2013 ; 30 июля - 3 авг. ; Владивосток)
}
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7.


    Draganyuk, O. N.
    Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study / O. N. Draganyuk, V. S. Zhandun, N. G. Zamkova // Phys. Status Solidi B. - 2019. - Vol. 256, Is. 12. - Ст. 1900228, DOI 10.1002/pssb.201900228. - Cited References: 34. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research Project No. 18‐42‐243019: “First‐principles studies of the polarization, magnetic, electronic, and magnetoelectric properties of functional compounds with a spinel structure containing 3d and 4f ions.” . - ISSN 0370-1972
Кл.слова (ненормированные):
ab initio calculations -- magnetic properties -- magnetic-instability boundaries -- manganese silicides -- mapping -- multiorbital model
Аннотация: The effect of the local environment on the formation of magnetic moments on Mn atoms in manganese silicide Mn3Si is studied by the combination of ab initio calculations and the model analysis. The suggested approach is related to the self-consistent mapping of the results of ab initio calculations to a multiorbital model. The model analysis allows to reveal the role played by the local environment of the transition metal atoms on the magnetic moments formation. It is found that the formation of the magnetic moment is controlled rather by hopping parameters between Mn atoms, not by the number of Mn–Si nearest neighbors. Particularly, the formation of magnetic moment on MnI atom is mainly controlled by the hopping parameter between nearest Mn atoms, while the magnetic moment on MnII atom is primarily determined by the hoppings between next-nearest Mn atoms. The obtained phase diagrams of the magnetic state show the presence of a sharp boundary with respect to the hopping between Mn atoms. This opens the opportunity to turn on or turn off the magnetic state by the external impacts. The ab initio calculations of Mn3Si well agree with the results of model consideration and confirm the model conclusions.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center Krasnoyarsk Science Centre, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Драганюк, Оксана Николаевна
}
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8.


   
    Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7 / I. A. Tarasov [et al.] // J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P. 7571–7594, DOI 10.1007/s10853-018-2105-y. - Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used. . - ISSN 0022-2461
Кл.слова (ненормированные):
Semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.

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Держатели документа:
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
M.N. Miheev Institute of Metal Physics of the UB RAS, Yekaterinburg, Russian Federation
Institute of Physics and Technology, Ural Federal University, Yekaterinburg, Russian Federation
Siberian Federal University, Institute of Nanotechnology, Quantum Chemistry and Spectroscopy, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Natural Sciences, Ural Federal University, Yekaterinburg, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин Максим Александрович; Kuznetzova, T. V.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Solovyov, L. A.; Kuzubov, A. A.; Nikolaeva, K. M.; Fedorov, A. S.; Федоров, Александр Семенович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Tomilin, F. N.; Томилин, Феликс Николаевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Pryahina, V. I.; Esin, A. A.; Yarmoshenko, Y. M.; Shur, V. Y.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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9.


   
    Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites / A. Usenko [et al.] // Scripta Mater. - 2018. - Vol. 146. - P. 295-299, DOI 10.1016/j.scriptamat.2017.12.019. - Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged. . - ISSN 1359-6462
Кл.слова (ненормированные):
Cost optimization -- Lattice thermal conductivity -- Magnesium silicides -- Spark plasma -- Thermo-Electric materials -- Thermoelectric figure of merit -- Thermoelectric performance -- Thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.

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Держатели документа:
National University of Science and Technology “MISiS”, Moscow, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
National Research South Ural State University, Chelyabinsk, Russian Federation

Доп.точки доступа:
Usenko, A.; Moskovskikh, D.; Korotitskiy, A.; Gorshenkov, M.; Zakharova, E.; Fedorov, A. S.; Федоров, Александр Семенович; Parkhomenko, Y.; Khovaylo, V.
}
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10.


   
    A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features / I. A. Tarasov [et al.] // International school/workshop on actual problems of condensed matter physics : Program. Book of abstracts / ed. S. G. Ovchinnikov. - Norilsk, 2018. - P. 14-15 . - ISBN 978-5-904603-08-3

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Kuznetsova, T. V.; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Research Institute of Agriculture and Ecology of the Arctic; Siberian Federal Univercity
}
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11.


   
    Эллипсометрический контроль параметров многослойных наноструктур Fe/Si в процессе роста / И. А. Тарасов [и др.] // Космич. аппараты и технол. - 2018. - Т. 2, № 4. - С. 220-224, DOI 10.26732/2618-7957-2018-4-220-224. - Библиогр.: 10. - Работа выполнена при финансовой поддержке программ Президиума РАН № 32, проект 0356-2018-0061, Министерства образования и науки Российской Федерации и Сибирского отделения Российской академии наук, проект II.8.70. . - ISSN 2618-7957
   Перевод заглавия: Ellipsometric control of parameters of multilayer Fe/Si nanostructures during growth
Кл.слова (ненормированные):
эллипсометрия -- силициды железа -- многослойные Fe/Si наноструктуры -- ellipsometry -- iron silicides -- multilayer Fe/Si nanostructures
Аннотация: С использованием метода одноволновой лазерной эллипсометрии in situ проведено исследование процесса формирования многослойной структуры [Si/Fe57/Fe56]3/SiO2/Si(100). Были получены сведения об оптических и структурных свойствах данной структуры. Изменение морфологии поверхности растущих слоев и их оптических характеристик оказываются неидентичными для случаев осаждения железа на поверхность слоя кремния и осаждения кремния на поверхность слоя железа. Полученные профили оптических постоянных свидетельствуют об увеличении толщины переходных слоев, содержащих твердые растворы «железо-кремний» и силициды. Характер изменения оптических постоянных усложняется с каждым последующим слоем железа, осаждаемым на поверхность кремния. Поведение профилей n и k, соответствующих формированию кремниевых слоев, имеет более простой характер по сравнению с поведением подобных профилей железа. Эти профили имеют лишь некоторые особенности на начальных этапах роста и соответствуют формированию аморфных слоев кремния. Полученные данные согласуются с данными просвечивающей электронной микроскопии.
Using in situ single-wave laser ellipsometry method, the formation of the [Si/Fe57/Fe56]3/SiO2/Si(100) multilayer structure was studied. Information about the optical and structural properties of this structure was obtained. The change in the morphology of the surface of the growing layers and their optical characteristics are not identical for the cases of iron deposition on the surface of the silicon layer and deposition of silicon on the surface of the iron layer. The refractive index and coefficient of absorption indicate an increase of the thickness of transition layers containing iron-silicon solid solutions and silicides. The nature of the change in the optical constants become more complicated with each subsequent iron layer deposited on the silicon surface. The behavior of n and k profiles corresponding to the formation of silicon layers is simpler than the behavior of similar iron profiles. These profiles have only some features at the initial stages of growth and correspond to the formation of amorphous silicon layers. The obtained data are consistent with the data of transmission electron microscopy.

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Держатели документа:
Институт физики им. Л. В. Киренского СО РАН, ФИЦ КНЦ СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Тарасов, Иван Анатольевич; Tarasov, I. A.; Яковлев, Иван Александрович; Yakovlev, I. A.; Варнаков, Сергей Николаевич; Varnakov, S. N.; Жарков, Сергей Михайлович; Zharkov, S. M.; Овчинников, Сергей Геннадьевич; Ovchinnikov, S. G.
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12.


   
    A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features / I. A. Tarasov [et al.] // Nanostructures: physics and technology : proc. 26th Int. symp. - 2018. - P. 209-210. - Cited References: 3 . - ISBN 978-985-7202-35-5

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Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nanostructures: Physics and Technology, International Symposium(26 ; 2018 ; June ; 18-22 ; Minsk, Belarus); Институт физики им. Б. И. Степанова НАН Беларуси; Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук; Физико-технический институт им. А.Ф. Иоффе РАН; Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
}
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13.


   
    Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [et al.] // International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 23

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Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Solovyov, L. A.; Соловьев, Леонид Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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14.


   
    The microscopic origin of ferromagnetism in Fe silicides : Invited / I. S. Sandalov [et al.] // Int. workshop on actual probl. of cond. matt. phys. : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 16

Материалы совещания

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Sandalov, I. S.; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
}
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15.


   
    International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. ; предс. прогр. ком. S. G. Ovchinnikov. - Krasnoyarsk : [s. n.], 2017. - 30 p.
    Содержание:
Bondarev, I. A. Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate / I. A. Bondarev. - P .25
Yakovlev, I. A. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on / I. A. Yakovlev [и др.]. - P .12
Другие авторы: Belyaev B. A., Rautskii M. V., Tarasov, I. A., Varnakov S. N, Ovchinnikov, S. G.
Popkov, S. I. Inverted opals as the Josephson networks of weak links : Invited / S. I. Popkov [и др.]. - P .24
Другие авторы: Gokhfeld D. M., Bykov A., Mistonov A., Shabanov A., Terentiev K.
Nikolaev, S. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation : Invited / S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. - P .27
Fedorov, A. S. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3 : Invited / A. S. Fedorov [и др.]. - P .20
Другие авторы: Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A.
Ovchinnikov, S. G. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle : Invited / S. G. Ovchinnikov [и др.]. - P .26
Другие авторы: Orlov Yu. S., Nikolaev S., Nesterov A., Ovchinnikova T.
Tarasov, I. A. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure / I. A. Tarasov [и др.]. - P .21
Другие авторы: Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Volkov, N. V. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures : Invited / N. V. Volkov [et al.]. - P .10
Другие авторы: Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Bondarev I. A., Ovchinnikov S. G.
Lukyanenko, A. V. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111) / A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. - P .28
Другие авторы: Tarasov A. S., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Yakovlev I. A., Volochaev M. N., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Rautskii, M. V. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier / M. V. Rautskii [и др.]. - P .29
Другие авторы: Tarasov A. S., Varnakov S. N., Bondarev I. A., Volochaev M. N., Lukyanenko A. V., Volkov N. V.
Moryachkov, R. Small angle X-ray scattering and atomic structure of aptamer biomolecules / R. Moryachkov [и др.]. - P .14-15
Другие авторы: Tomilin F. N., Shchugoreva I., Spiridonova V., Peters G., Zabluda V.
Tarasov, I. A. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [и др.]. - P .23
Другие авторы: Visotin M. A., Solovyov L. A., Rautskii M. V., Zhandun, V. S., Nemtsev I. V., Yakovlev I. A., Varnakov S. N, Ovchinnikov, S. G.
Sokolov, A. E. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer : Invited / A. E. Sokolov [и др.]. - P .13
Другие авторы: Zamay S., Zamay T., Svetlichnyi V., Velikanov D.
Sandalov, I. S. The microscopic origin of ferromagnetism in Fe silicides : Invited / I. S. Sandalov [и др.]. - P .16
Другие авторы: Zamkova N. G., Zhandun V. S., Ovchinnikov, S. G.

Материалы конференции
Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Lukyanenko, A. V.; Varnakov, S. N.; Bondarev, I. A.; Ovchinnikov, S. G.; Tarasov, I. A.; Svetlichnyi, V.; Velikanov, D. A.; Spiridonova, V.; Peters, G.; Zabluda, V. N.; Popova, M. I.; Kholtobina, A. S.; Mikhaleva, N. S.; Visotin, M. A.; Yakovlev, I. A.; Volkov, N. V.; Rautskii, M. V.; Zhandun, V. S.; Nemtsev, I. V.; Varnakov, S. N; Mistonov, A.; Shabanov, A. V.; Terentiev, K. Yu.; Nesterov, A.; Ovchinnikova, T.; Smolyarova, T. E.; Volochaev, M. N.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
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16.


   
    Reflection electron energy loss spectroscopy of structures based on silicon and transition metals / A. S. Parshin [et al.] // IOP Conf. Ser.: Mater. Sci. Eng. - 2017. - Vol. 255, Is. 1. - Ст. 012019, DOI 10.1088/1757-899X/255/1/012019. - Cited References: 24
Кл.слова (ненормированные):
Dissociation -- Electron emission -- Electron energy levels -- Electron scattering -- Electrons -- Energy dissipation -- Iron -- Iron compounds -- Silicides -- Silicon compounds -- Transition metals
Аннотация: The investigation of iron silicides FeSi2, FeSi and Fe5Si3 with the methods of reflection electron energy loss spectroscopy and inelastic electron scattering cross-section spectroscopy was carried out. It is shown that the shape and peak energy position of electron energy loss spectra are almost identical to silicides with different composition, while the amplitude of inelastic electron scattering cross-section spectra decreases with increasing of iron content. The decomposition of inelastic electron scattering cross-section spectra of FeSi2, FeSi and Fe5Si3 to Tougaard peaks is used for unresolved energy loss peaks analysis, determination its energies and identification bulk and surface peaks. The amplitude of fitting peak describing bulk plasmon excitation can be used for identification of the iron silicides with different composition.

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Доп.точки доступа:
Parshin, A. S.; Паршин, Анатолий Сергеевич; Igumenov, A. Y.; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович; International Scientific Conference Reshetnev Readings(20 ; 2016 ; Nov. 9-12 ; Krasnoyarsk)
}
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17.


   
    Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
}
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18.


   
    Effect of local environment on moment formation in iron silicides / N. G. Zamkova [et al.] // J. Alloys Compd. - 2017. - Vol. 695. - P. 1213-1222, DOI 10.1016/j.jallcom.2016.10.248. - Cited References: 40. - This work was supported by the Grants of Russian Foundation for Basic Research № 14-02-00186, № 17-02-00161 and by the Grants of Russian Foundation for Basic Research and Government of Krasnoyarsk Territory № 16-42-243035, 16-42-242036. The authors would like to thank AS Shinkorenko for the technical support. . - ISSN 0925-8388
   Перевод заглавия: Влияние локального окружения на формирование магнитного момента в силицидах железа
Кл.слова (ненормированные):
Ab initio calculations -- Iron silicides -- Magnetic properties -- Multiorbital model -- Spin-crossover
Аннотация: he effect of local environment on the formation of magnetic moments on Fe atoms in iron silicides is studied by combination of ab initio and model calculations. The suggested model includes all Fe d- and Si p-orbitals, intra-atomic Coulomb interactions, inter-atomic Fe-Fe exchange and hopping of electrons to nearest and next nearest neighboring atoms. The parameters of the model are found from the requirement that self-consistent moments on atoms and density of states found from ab initio and model calculations within the Hartree-Fock approximation are close to each other as much as possible. Contrary to the commonly accepted statement that in the ordered Fe3Si and FexSi1−x alloys an increase of the Si concentration within nearest environment of Fe atoms results in a decrease of Fe magnetic moment we find that a crucial role in the formation of magnetic moments is played by the second coordination sphere of Fe atoms. Particularly, the Fe atoms have higher magnetic moments in amorphous films compared to the epitaxial ones due to decreasing the number of iron-atoms in the next nearest environment. Both our model and ab initio calculations confirm existence of known spin crossover with pressure and predict second crossover at higher pressure.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50, Krasnoyarsk, Russian Federation
National Research Nuclear University MEPhI, Kashurskoe sh. 31, Moscow, Russian Federation

Доп.точки доступа:
Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Sandalov, I. S.; Сандалов, Игорь Семёнович
}
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19.


   
    Reflection electron energy loss spectroscopy of iron monosilicide / A. S. Parshin [et al.] // Russ. Phys. J. - 2017. - Vol. 59, Is. 10. - P. 1610-1615, DOI 10.1007/s11182-017-0952-7. - Cited References:14 . - ISSN 1064-8887. - ISSN 1573-9228
РУБ Physics, Multidisciplinary
Рубрики:
SCATTERING CROSS-SECTION
   SPECTRA

Кл.слова (ненормированные):
iron silicides -- iron monosilicide -- inelastic electron scattering cross -- section spectroscopy -- reflection electron energy loss spectroscopy -- x-ray photoelectron spectroscopy
Аннотация: X-ray photoelectron spectra, reflection electron energy loss spectra, and inelastic electron scattering cross section spectra of iron monosilicide FeSi are investigated. It is shown that the spectra of inelastic electron scattering cross section have advantages over the reflection electron energy loss spectra in studying the processes of electron energy losses. An analysis of the fine structure of the inelastic electron scattering cross section spectra allows previously unresolved peaks to be identified and their energy, intensity, and nature to be determined. The difference between energies of fitting loss peaks in the spectra of inelastic electron scattering cross section of FeSi and pure Fe are more substantial than the chemical shifts in X-ray photoelectron spectra, which indicates the possibility of application of the fine structure of the spectra of inelastic electron scattering cross section for elemental analysis.

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Публикация на русском языке Спектроскопия потерь энергии отраженных электронов моносилицида железа [Текст] / А. С. Паршин [и др.] // Изв. вузов. Физика. - 2016. - Т. 59 № 10. - С. 82-86

Держатели документа:
MF Reshetnev Siberian State Aerosp Univ, Krasnoyarsk, Russia.
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk, Russia.
Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Novosibirsk, Russia.
Russian Acad Sci, LV Kirensky Inst Phys, Krasnoyarsk, Russia.

Доп.точки доступа:
Parshin, A. S.; Igumenov, A. Yu.; Mikhlin, Yu. L.; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович
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20.


   
    MBE of iron silicide heterostructures for spintronics / S. N. Varnakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.3. - P. 213. - References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
molecular beam epitaxy -- iron silicides -- spintronic devices


Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Belyaev, B. A.; Беляев, Борис Афанасьевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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