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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Sakai, Seiji, Ohtomo, Manabu, Entani, Shiro, Matsumoto, Yoshihiro, Naramoto, Hiroshi, Eleseeva N. S.
Заглавие : Contact-induced spin polarization in graphene/h-BN/Ni nanocomposites
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 11. - Ст.114303. - P. - ISSN 0021-8979, DOI 10.1063/1.4767134
Примечания : Cited References: 47. - This work was supported by JAEA Research fellowship (P.V.A.). P.V.A. also acknowledges JAEA ASRC and Molecular Spintronics Group for hospitality and fruitful collaboration. The authors are grateful to the ICS SB RAS and SFU CC (Krasnoyarsk), ISC RAS and MSU CRC, (SKIF MSU "Chebyshev", Moscow) for computer resources. This work was partially supported by the RFBR grant 12-02-31417.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
TRILAYER GRAPHENE
NI(111) SURFACE
GRAPHITE
APPROXIMATION
SPINTRONICS
DIFFRACTION
SIMULATION
SUBSTRATE
CARBON
Аннотация: Atomic and electronic structure of graphene/Ni(111), h-BN/Ni(111) and graphene/h-BN/Ni(111) nanocomposites with different numbers of graphene and h-BN layers and in different mutual arrangements of graphene/Ni and h-BN/Ni at the interfaces was studied using LDA/PBC/PW technique. Using the same technique corresponding graphene, h-BN and graphene/h-BN structures without the Ni plate were calculated for the sake of comparison. It was suggested that C-top:C-fcc and N-top:B-fcc configurations are energetically favorable for the graphene/Ni and h-BN/Ni interfaces, respectively. The Ni plate was found to induce a significant degree of spin polarization in graphene and h-BN through exchange interactions of the electronic states located on different fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767134]
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Baron F. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier
Коллективы : Russian Foundation for Basic Research [11-02-00367-a]; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures [20.8]; Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; Russian Ministry of Education and Science [N 02.G25.31.0043]
Место публикации : J. Appl. Phys.: American Institute of Physics, 2013. - Vol. 114, Is. 9. - Ст.093903. - P. - ISSN 0021-8979, DOI 10.1063/1.4819975
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 43, 85 and 102; Project of the Russian Ministry of Education and Science N 02.G25.31.0043.
Предметные рубрики: SPIN POLARIZATION
SPINTRONICS
SILICON
Аннотация: We report giant magnetoresistance (MR) effect that appears under the influence of optical radiation in common planar device built on Fe/SiO2/p-Si hybrid structure. Our device is made of two Schottky diodes connected to each other by the silicon substrate. Photo-induced MR is positive and the MR ratio reaches the values in excess of 10(4)%. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. To explain such unexpected behavior of the MR, one needs to take into account contribution of several physical mechanisms. The main contribution comes from the existence of localized interface states at the SiO2/p-Si interface, which provide the spots for the photo-current conduction by virtue of the sequential tunneling through them or thermal generation and optical excitation of mobile charges. External magnetic field changes the probability of these processes due to its effect on the energy states of the conduction centers. Two possible mechanisms that may be responsible for the observed dependence of magneto-resistance on the field polarity are discussed: the effect of the Lorentz force on moving carriers and spin splitting of electrons moving in the electrostatic potential gradient (Rashba effect). The most significant observation, in our opinion, is that the observed MR effect is seen exclusively in the subsystem of minority carriers transferred into non-equilibrium state by optical excitation. We suggest that building such magneto-sensitive devices based on this mechanism may set a stage for new types of spintronic devices to emerge. (C) 2013 AIP Publishing LLC.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Rautskii M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.125-128. - ISBN 978, DOI 10.4028/www.scientific.net/SSP.190.125. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): magnetic tunnel structure--microwave detection effect--spintronics--current flowing--current-in-plane geometry--magnetic tunnels--magnetization dynamics--microwave detection--non-linearity--rectification effects--spin-polarized currents--voltage signals--magnetic materials--magnetoelectronics--manganese oxide--microwaves--magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Eremin A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Frequency-dependent magnetotransport phenomena in a hybrid Fe/SiO2/p-Si structure
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 12. - Ст.123906. - ISSN 0021-8979, DOI 10.1063/1.4769788
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, Integration Projects Nos. 85 and 102, and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State Contract No. NK-556P_15).
Предметные рубрики: SILICON
IRON
SPINTRONICS
PAIRS
Аннотация: We report the large magnetoimpedance effect in a hybrid Fe/SiO2/p-Si structure with the Schottky barrier. The pronounced effect of magnetic field on the real and imaginary parts of the impedance has been found at temperatures 25-100K in two relatively narrow frequency ranges around 1 kHz and 100MHz. The observed frequency-dependent magnetotransport effect is related to the presence of localized "magnetic" states near the SiO2/p-Si interface. In these states, two different recharging processes with different relaxation times are implemented. One process is capture-emission of carriers that involves the interface levels and the valence band; the other is the electron tunneling between the ferromagnetic electrode and the interface states through SiO2 potential barrier. In the first case, the applied magnetic field shifts energy levels of the surface states relative to the valence band, which changes recharging characteristic times. In the second case, the magnetic field governs the spin-dependent tunneling of carriers through the potential barrier. The "magnetic" interface states originate, most likely, from the formation of the centers that contain Fe ions, which can easily diffuse through the SiO2 layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769788]
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S.
Заглавие : Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier Science BV, 2012. - Vol. 324, Is. 21. - P.3579-3583. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2012.02.095
Примечания : Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15).
Ключевые слова (''Своб.индексиров.''): spintronics--magnetic tunnel junction--high-frequency rectification--photoelectric effect
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Rautskiy M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Место публикации : J. Phys. D. - 2012. - Vol. 45, Is. 25. - Ст.255301. - ISSN 0022-3727, DOI 10.1088/0022-3727/45/25/255301
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, project no 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Fundamentals for Basic Research of Nanotechnology and Nanomaterials, project no 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin-Dependent Effects in Solids and Spintronics, project no 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos 5 and 134; and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State contract no NK-556P_15).
Предметные рубрики: IDENTICAL METALS
JUNCTIONS
RECTIFICATION
SPINTRONICS
MECHANISM
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a typical voltage signal due to the rectification effect. We performed measurements in current-in-plane geometry when a current flows parallel to the interfaces in the structure. The value of the microwave-induced voltage strongly depends on the bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristics and within the mechanism involving the interplay between the spin-polarized current and the magnetization dynamics in the magnetic tunnel structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V.
Заглавие : Spintronics: manganite-based magnetic tunnel structures
Место публикации : Phys. Usp.: Turpion LTD, 2012. - Vol. 55, Is. 3. - P.250-269. - ISSN 1063-7869, DOI 10.3367/UFNe.0182.201203b.0263
Примечания : Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15).
Предметные рубрики: HIGH-FREQUENCY RECTIFICATION
THIN INSULATING FILM
COLOSSAL MAGNETORESISTANCE
GIANT MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
SANDWICH STRUCTURES
SPIN POLARIZATION
IDENTICAL METALS
PHASE-SEPARATION
ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N.
Заглавие : Magnetotransport effects in paramagnetic GdxMn1-xS
Коллективы : Russian Foundation for Basic Research [12-02-00125-a, 14-02-90010-Bel_a]
Место публикации : JETP Letters. - 2014. - Vol. 100, Is. 2. - P.95-101. - ISSN 0021-3640, DOI 10.1134/S0021364014140021. - ISSN 1090-6487
Примечания : Cited References: 12. - This work was supported by the Russian Foundation for Basic Research (project nos. 12-02-00125-a and 14-02-90010-Bel_a).
Предметные рубрики: PHASE-SEPARATION
SPINTRONICS
MANGANITES
Аннотация: The electrical resistance of GdxMn1 − xS solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K ˂ T ˂ 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Petrakovskii G. A.
Заглавие : Materials of spintronics
Коллективы : China-Russia Symposium on Advaced Materials and Technologies (12; 2013 ; Nov. 18-22; Kunming, China)
Место публикации : Adv. metals, ceramics and composites: 12th China-Russia Symposium on Advaced Materials and Technologies. - 2013. - Pt. 1. - P.155-159: Proceedings. - ISBN 978-7-5415-7650-5
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism , Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156], Presidium of the Russian Academy of Sciences [20.8], Ministry of Education and Science of the Russian Federation [02.G25.31.0043]
Место публикации : J. Magn. Magn. Mater./ Moscow International Symposium on Magnetism (6th ; Moscow) (29 June – 3 July 2014): Elsevier Science, 2015. - Vol. 383. - P.69-72. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.11.014
Примечания : Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043.
Предметные рубрики: SILICON
SPINTRONICS
FIELD
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--magnetoresistance--magnetoimpedance--photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Куклин, Артем Валентинович, Кузубов, Александр Александрович, Денисов, Виктор Михайлович, Ковалева, Евгения Андреевна, Шостак С. А.
Заглавие : Квантово-химическое исследование структуры и свойств моно- и бислоев CrN
Место публикации : Вестник СибГАУ. - Красноярск: СибГАУ, 2015. - Т. 16, № 2. - С. 450-455. - ISSN 1816-9724
Примечания : Библиогр.: 32. - Авторы выражают благодарность Сибирскому суперкомпьютерному центру СО РАН (Новосибирск), Межведомственному суперкомпьютерному центру РАН (Москва), а также НИВЦ МГУ «Лаборатория параллельных информационных технологий» [25] (система СКИФ МГУ «Чебышев») за предоставленные возможности использования вычислительных кластеров, на которых были проведены расчеты. Работа выполнена в рамках государственного задания Министерства образования Сибирскому федеральному университету (грант № 16.1500.2014/K).
Ключевые слова (''Своб.индексиров.''): crn--тонкие пленки--монослои--dft--ab initio--спинтроника--thin films--monolayers--spintronics
Аннотация: В последнее время такие материалы, как графен, h-BN и дихалькогениды переходных металлов, получают широкое применение в различных областях (спинтроника, фотовольтаика, валлейтроника) в связи с их низкой размерностью и проявлением свойств, отличных от их объемных аналогов. В то же время на данном этапе развития науки активно исследуются другие двумерные материалы, в том числе нитриды и карбиды переходных металлов. Некоторые из них уже экспериментально получены, охарактеризованы и имеют большой потенциал применения в наноэлектронике. Схожие с графеном 2D-структуры могут быть основаны на нитриде хрома, магнитные своиства которого будут зависеть от координационного числа и, соответственно, количества неспаренных электронов. В данной работе, используя метод PAW и обобщенное градиентное приближение GGA-PBE в рамках теории функционала плотности (DFT+U) с коррекцией слабого дисперсионного взаимодействия, было предсказано существование моно- и бислоев нитрида хрома с кристаллографическими индексами поверхностей (100) и (111). Показано изменение геометрии двумерных структур относительно кристаллической фазы. Полученные 2D CrN (100) и (111) являются идеально плоскими. Для сравнения энергетической стабильности двумерного CrN была рассчитана относительная энергия образования монослоя. Проведены спин-поляризованные расчеты ферромагнитного и антиферромагнитного состояний. Анализ электронной структуры указывает на то, что данные материалы являются ферромагнетиками со 100 % спиновой поляризацией. В соответствии с классической моделью Гейзенберга был рассчитан обменный параметр J для монослоя (100). Исследована зависимость изменения свойств при переходе от моно- к бислойным структурам.Lately, such materials as graphene h-BN and transition metal dichalcogenides have been widely used in various fields and have received a lot of attention owing to its numerous device applications (spintronics, photovoltaic, valleitronics). This is due to the low dimensionality and different properties from those bulk materials. At the same time, at this stage of scientific development, other two-dimensional materials have been actively studied, including carbides and nitrides of transition metals. Some of them have been experimentally obtained, characterized and have great potential for application in nanoelectronics. Similar to the 2D graphene structures can be based on chromium nitride whose magnetic properties will depend on the coordination number and the number of uncoupled electrons correspondingly.In this work, using PAW method and the gradient corrected density functional GGA-PBE within the framework of generalized Kohn-Sham density functional theory (DFT+U) considering weak dispersion interaction, we have predicted the existence of a chromium nitride mono- and bilayers of (100) and (111) crystallographic surface. It was shown that the monolayers geometry relative to the crystalline phase was changed. The 2D CrN (100) and (111) are perfectly flat. To comparison of the energy stability of two dimensional CrN the relative energy of monolayer formation was calculated. Using spin-polarized calculations we calculate ferromagnetic and antiferromagnetic states. The analysis of electronic structure shows that these materials are ferromagnets with 100 % spin polarization. According to the classical Heisenberg model, the exchange parameter J has been calculated (for monolayer 100). The dependence of the changes in the properties during the transition from mono to bilayers structures was investigated.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Vorotynov A. M., Makovetskii G. I., Demidenko O. F., Yanushkevich K. I.
Заглавие : Peculiarities of transport, resonance and optical properties of the anion-substituted manganese chalcogenides
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.447-450. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.447. - ISSN 978-3-03835-482-6
Предметные рубрики: Achievements in magnetism
Spintronics and magnetotransport
Ключевые слова (''Своб.индексиров.''): chalcogenides--magnetoresistance effect--optical absorption spectra--resonance properties
Аннотация: Present paper reports of resonance properties of Mn2GeO4 single crystals. The data confirm the formation of a complex spiral magnetic structure at low temperatures. It is shown that the spin reorientation may be associated with the competition anisotropic contributions of the various subsystems of the manganese ions.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Romanova O. B., Eremin E. V., Sokolov V. V., Pichugin A. Y.
Заглавие : Magnetoresistance and magnetic properties CexMn1-xS
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.419-422. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.419. - ISSN 978-3-03835-482-6
Предметные рубрики: Achievements in magnetism
Spintronics and magnetotransport
Ключевые слова (''Своб.индексиров.''): curie temperature--hysteresis--magnetoresistance effect--variable valence
Аннотация: The transport and magnetic properties of cation-substituted manganese sulphides CexMn1-ХS in the 4K - 450K temperature range in magnetic fields up to 90 kOe are studied. The hysteresis of curve magnetization for X=0.01 and nonlinear field behavior of the magnetization at X = 0.05, the sharp Curie temperature drop were found. The sharp maximum in the temperature dependence of resistivity was observed. The shift of the maximum temperature to low temperatures at cerium ion concentration increasing and in magnetic field was established. Model of orbital polaron for explanation of experimental datа was used.
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Galyas A. I., Yanushkevich K. I., Sokolov V. V.
Заглавие : Cation-substituted TmXMn1-XS solid solutions with special magnetic and electrical properties
Коллективы : International Conference on Magnetism
Место публикации : 20th Int. Conf. on Magnetism (ICM-2015): book of abstracts. - 2015. - P.241
Предметные рубрики: Semiconductor spintronics
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Marushchenko E. A., Kobyakov A. V., Maltsev V. K., Yushkov V. I.
Заглавие : Magnetic and magnetoresistance properties of (Co/Ge)n films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.423-426. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.423. - ISSN 978-3-03835-482-6
Предметные рубрики: Achievements in magnetism
Spintronics and magnetotransport
Ключевые слова (''Своб.индексиров.''): bilayer structure magnetization--cobalt--coercivity--ferromagnetic metal/semiconductor films--germanium interface--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of (Co/Ge)nfilms are experimentally studied. It is established that at the Co/Ge interfacean intermediate magnetic layer forms. Twophases of cobalt, one is a face-centered cubic phase and the other ispresumably a Co–Ge alloy with a weakly ferromagnetic order, have been found toexist. A “dead” layer no more than 2 nm in thickness is formed at the interface.This layer affects the magnetic behavior andmagnetoresistive effect in the investigated structures.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuzubov A. A., Avramov P. V., Nikolaeva K. M., Mikhaleva N. S., Kovaleva E. A., Kuklin A. V., Fedorov A. S.
Заглавие : Study of interaction between transition metal atoms and bigraphene monovacancy by means of quantum chemistry
Место публикации : Comput. Mater. Sci.: Elsevier, 2016. - Vol. 112, Part A. - P.269-275. - ISSN 0927-0256, DOI 10.1016/j.commatsci.2015.11.002
Примечания : Cited References: 39. - The authors would like to thank Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; and L.V. Kirensky Institute of Physics of SB RAS, Krasnoyarsk, for providing the access to their supercomputers. This work was supported by the government contract of the Ministry of Education and Science of the Russian Federation to Siberian Federal University (Grant No. 16.1500.2014/K).
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
MASSLESS DIRAC FERMIONS
GRAPHENE
VACANCIES
POINTS
GAS
Ключевые слова (''Своб.индексиров.''): bigraphene--spintronics--transition metal--adsorption--migration
Аннотация: First-row transition metal atoms adsorption on bigraphene monovacancy was studied within the framework of DFT in periodic boundary conditions. Electronic and magnetic properties of composites were analyzed and their potential utilization in spintronics was discussed. Barriers of metal atoms migration from bigraphene surface to the interlayer space through the vacancy were estimated in order to consider both thermodynamic and kinetic aspects of composites experimental preparation. Formation of metal atoms inner-sorbed on bigraphene was found to demand harsh synthesis conditions; whereas outer-sorbed composites demonstrate significantly higher degree of spin polarization which makes them perspective for usage in spintronic devices. © 2015 Elsevier B.V.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ковалева, Евгения Андреевна, Кузубов, Александр Александрович, Куклин, Артем Валентинович, Михалев, Юрий Глебович, Popov Z. I.
Заглавие : Квантово-химическое исследование атомной и электронной структуры интерфейсов LSMO с углеродными нанотрубками различной хиральности
Место публикации : Вестник СибГАУ. - Красноярск, 2015. - Т. 16, № 3. - С. 729-734. - ISSN 1816-9724
Примечания : Библиогр.: 31. - Работа выполнена в рамках государственного задания Министерства образования Сибирскому федеральному университету (грант No 16.1500.2014/K). Авторы выражают благодарность Институту вычислительного моделирования СО РАН, г. Красноярск; Межведомственному суперкомпьютерному центру РАН, г. Москва; Центру коллективного пользования СФУ, г. Красноярск; а также Сибирскому суперкомпьютерному центру СО РАН, г. Новосибирск, за предоставленные возможности использования вычислительных кластеров, на которых были проведены расчеты
Ключевые слова (''Своб.индексиров.''): углеродные нанотрубки--спиновая поляризация--спинтроника--lsmo--gga+u--carbon nanotubes--spin polarization--spintronics
Аннотация: Замещенные манганиты лантана с общей формулой La1-xSrxMnO3 (LSMO) являются перспективными материалами спинтроники и спинкалоритроники, что обусловлено практически стопроцентной спиновой поляризацией данных материалов. На основе интерфейсов LSMO-графен были созданы высокоэффективные органические светодиоды (ОLED) и спиновые клапаны. Многостенные углеродные нанотрубки, соединяющие электроды на основе La0,7Sr0,3MnO3, являющегося полуметаллом, демонстрируют высокое магнитное сопротивление, большое время жизни ориентированного спина, высокую скорость Ферми. Полученные экспериментальные результаты подтверждаются также данными квантово-химических расчетов. Тем не менее интерфейсы замещенных манганитов лантана с углеродными нанотрубками в настоящее время изучены недостаточно. В ходе квантово-химического исследования взаимодействия углеродных нанотрубок различной хиральности с поверхностью замещенного манганита лантана La0,67Sr0,33MnO3 при помощи теории функционала плотности в обобщенно-градиентном приближении с использованием поправки Хаббарда и коррекции вандерваальсова взаимодействия рассмотрены различные варианты расположения нанотрубок относительно атомов пластины. Рассмотрены нанотрубки как конфигурации «зигзаг» (хиральности (9,0)), так и конфигурации «кресло» (хиральности (5,5)). Построены парциальные плотности состояний атомов нанотрубок, исследовано влияние подложки на электронную структуру нанотрубок, а также возможность применения исследуемых нанокомпозитов в устройствах спинтроники. Показано, что при взаимодействии углеродных нанотрубок с поверхностью LSMO (001) вследствие несовпадения структурных параметров наблюдается деформация нанотрубок по сравнению с исходной структурой. Нанотрубка хиральности (9,0) после взаимодействия с пластиной оказывается сжатой примерно на 9 %, в то время как нанотрубка хиральности (5,5) растягивается примерно на 5 %. Установлено, что указанная деформация приводит к значительному изменению электронной структуры нанотрубок и смещению уровня Ферми. Однако несмотря на то, что композиты в целом оказываются практически полностью спин-поляризованными, данный эффект обусловлен присутствием LSMO в составе системы, в то время как различия в заселенности разных спиновых подсистем для нанотрубок практически отсутствуют.Complex half-metallic manganites La1-xSrxMnO3 (LSMO) are promising materials for spintronic and spicaloritronic applications due to 100 % of spin polarization. Using spin-polarized currents through LSMO-graphene interfaces a number of LSMO-based high-efficiency organic LED and spin-valve nanodevices have been developed. Large magnetoresistance effects bonded with large output signals were detected in a nanodevice. The device of multiwall carbon nanotube that spans a gap between spin-polarized half-metallic La0.7Sr0.3MnO3 electrodes demonstrated long spin lifetime and high Fermi velocity in the nanotube, the high spin polarization of the manganite electrodes and the resistance of the interfacial barrier for spin injection. The experimental results were supported by density functional theory calculations. Interfaces of La0,67Sr0,33MnO3 with armchair and zigzag carbon nanotubes (CNT) were studied by means of quantum chemistry within density functional theory. All calculations were performed using generalized gradient approximation with Hubbard correction (GGA+U) and Grimme correction of dispersion interaction. Different configurations of composite compartments mutual arrangement were considered. The analysis of partial densities of states (PDOS) reveals the influence of substrate on nanotube’s electronic structure. The possibility of nanotubes’ spin polarization and utilization of such nanocomposites in spintronics is also discussed. It was found that interaction between carbon nanotubes and LSMO slab lead to major deformation of the tube due to the difference in structural parameters of composite compartments. Zigzag (9,0) nanotube is contracted by 9% while armchair (5,5) nanotube is stretched by 5 %. Although this deformation results in significant change in nanotube’s electronic structure, there is no visible difference between spin-up and spin-down PDOSes of the tubes. Composites are then almost totally spin-polarized due to the presence of LSMO.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Izotov A. V.
Заглавие : FMR study of the anisotropic properties of an epitaxial Fe3Si film on a Si(111) vicinal surface
Место публикации : JETP Letters. - 2016. - Vol. 103, Is. 1. - P.41-45. - ISSN 00213640 (ISSN), DOI 10.1134/S0021364016010033
Примечания : Cited References: 28
Предметные рубрики: Thin magnetic-films
Ferromagnetic-resonance
Cobalt films
Metal-films
Spectrometer
Spintronics
Roughness
Аннотация: The anisotropic characteristics of an iron silicide (Fe3Si) epitaxial thin magnetic film grown on a Si(111) silicon vicinal surface with a misorientation angle of 0.14° have been measured by the ferromagnetic resonance method. It has been shown that the polar and azimuth misorientation angles of the crystallographic plane of the substrate can be determined simultaneously from the angular dependences of the ferromagnetic resonance field of the epitaxial film. The effective saturation magnetization of the film M eff = 1105 G and the constant of the cubic magnetocrystalline anisotropy K 4 = 1.15 × 105 erg/cm3 have been determined. The misorientation of the substrate plane leads to the formation of steps on the film surface and, as a result, to the appearance of uniaxial magnetic anisotropy of the magnetic dipole nature with the constant K 2 = 796 erg/cm3. Small unidirectional magnetic anisotropy (K 1 = 163 erg/cm3), which may be associated with symmetry breaking on the steps of the film and is due to the Dzyaloshinskii–Moriya interaction, has been detected.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuzubov A. A., Kovaleva E. A., Avramov P. V., Kholtobina A. S., Mikhaleva N. S., Kuklin A. V.
Заглавие : Buckminsterfullerene's movability on the Fe(001) surface
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2016. - Vol. 410. - P.41-46. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2016.03.023
Примечания : Cited References: 32. - This work was supported by the Russian Scientific Fund (Project no. 14-13-00139) and the Foundation for Assistance to Small Innovative Enterprises (FASIE) (Project no. 0011742). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers.
Предметные рубрики: Initio molecular-dynamics
Total-energy calculations
Augmented-wave
Ключевые слова (''Своб.индексиров.''): buckminsterfullerene--c60--fe(001)--spintronics--adsorption--relocation--dft
Аннотация: Organic-based spintronics is one of the most fast-developing fields in nanoelectronics. Buckminsterfullerene-based composites are widely investigated due to its unique properties and there is a number of studies concerned with its interfaces with various types of substrates. Ferromagnetic surfaces are of a particular interest for potential spintronics applications. Based on the data reported in literature, we suppose that there are more than one stable structure in C60/Fe(001) composite system. Here we investigate different possible adsorption sites of C60 molecule and reveal the possibility of their coexistence and its influence on the composite properties. © 2016 Elsevier B.V.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kovaleva E. A., Kuzubov A. A., Avramov P. V., Kuklin A. V., Mikhaleva N. S., Krasnov P. O.
Заглавие : Characterization of LSMO/C60 spinterface by first-principle calculations
Место публикации : Org. Electron.: Phys. Mater. Appl.: Elsevier, 2016. - Vol. 37. - P.55-60. - ISSN 15661199 (ISSN), DOI 10.1016/j.orgel.2016.06.021
Примечания : Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers.
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
ORGANIC SPIN-VALVES
BASIS-SET
SEMICONDUCTORS
INJECTION
SPINTRONICS
TEMPERATURE
ALGORITHM
Ключевые слова (''Своб.индексиров.''): c60--lsmo--spinterface--dft--magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.
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