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Каталог книг и брошюр библиотеки ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin L. A., Matsynin A. A., Balashov Yu. Yu., Myagkov V. G., Zhigalov V. S., Bykova L. E., Komogortsev S. V.
Заглавие : The phases formed in Sn/Co thin bilayer upon heating
Колич.характеристики :5 с
Место публикации : J. Solid State Chem. - 2024. - Vol. 334. - Ст.124693. - ISSN 00224596 (ISSN), DOI 10.1016/j.jssc.2024.124693. - ISSN 1095726X (eISSN)
Примечания : Cited References: 33
Аннотация: The structure and phases formed in Sn/Co thin films are interesting both from the solid-state chemistry point of view and due to applications of such a metallic bilayer. The phases forming in thin films Sn/Co obtained by thermal vacuum evaporation on two different substrates SiO2 and MgO(100) at different annealing temperatures have been studied. Annealing above 110°С results in intermetallics formation in the films. The hcp-cobalt is grown in the films on SiO2 substrate, and the fcc-Co is observed on MgO(100) substrate. It is found that the stable α-Co3Sn2 intermetallic is formed at higher annealing temperature in film on MgO(100) substrate. We show that transformations related to mass transfer in the Sn/Co bilayers were up to 500°С and were finished upon reaching the thermodynamically equilibrium phase composition at this temperature.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Zharkov S. M., Ivanenko A. A., Bondarenko G. N., Velikanov D. A.
Заглавие : Solid-state synthesis, magnetic and structural properties of epitaxial D03-Fe3Rh(001) thin films
Место публикации : Intermetallics. - 2023. - Vol. 157. - Ст.107871. - ISSN 09669795 (ISSN), DOI 10.1016/j.intermet.2023.107871. - ISSN 18790216 (eISSN)
Примечания : Cited References: 27. - The authors are grateful to L.A. Solovyov for carrying out the XRD φ-scan experiments and I.V. Nemtsev for the measurements of the sample composition. The work is partially based upon the experiments performed at Krasnoyarsk Regional Center of Research Equipment of Federal Research Center « Krasnoyarsk Science Center SB RAS». This research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors
Аннотация: Here we first report on the formation of epitaxial D03-Fe3Rh(001) films grown during solid-state reaction in Rh/Fe(001) bilayers on MgO(001) substrates. Samples of the Fe68Rh32 composition above 400 °C showed the formation of a new ordered phase, in addition to the ordered B2–FeRh phase (space group Pm-3m, lattice constant a = 0.2993 nm), which becomes the dominant phase in Fe76Rh24 samples. These results and the results of the asymmetrical XRD φ-scan prove that the new ordered phase is the ordered D03-Fe3Rh(001) phase (space group Fm-3m, lattice constant a = 0.5888 nm), forming a cube-on-cube orientation relationship with respect to the MgO(001) substrate. The D03-Fe3Rh sample is a soft magnetic material with high saturation magnetization.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Rautskii M. V., Neznakhin D. S., Stepanova E. A., Edelman I. S., Chou, Hsiung
Заглавие : Particles–matrix bond in ZnCoO:H and ZnCoAlO:H films: Issues of magnetism and spin injection
Место публикации : Materials. - 2023. - Vol. 16, Is. 10. - Ст.3659. - ISSN 19961944 (eISSN), DOI 10.3390/ma16103659
Примечания : Cited References: 45. - This work was supported by the Russian Science Foundation [grant number 21-72-00061]
Аннотация: ZnCoO:H and ZnCoAlO:H films were synthesized by radio frequency magnetron sputtering in a (1 − x)Ar + xH2 mixed atmosphere with x = 0.2–0.5. The films contain different amounts of metallic Co particles (from 7.6% and higher) ~4–7 nm in size. The magnetic and magneto-optical (MO) behavior of the films was analyzed in combination with their structural data. The samples exhibit high values of magnetization (up to 377 emu/cm3) and MO response at room temperature. Two situations are considered: (1) the film magnetism is associated only with isolated metal particles and (2) magnetism is present both in the oxide matrix and in metal inclusions. It has been established that the formation mechanism of the magnetic structure of ZnO:Co2+ is due to the spin-polarized conduction electrons of metal particles and zinc vacancies. It was also found that in the presence of two magnetic components in the films, these components are exchange-coupled. In this case, the exchange coupling generates a high spin polarization of the films. The spin-dependent transport properties of the samples have been studied. A high value of the negative magnetoresistance of the films at room temperature (~4%) was found. This behavior was explained in terms of the giant magnetoresistance model. Thus, the ZnCoO:H and ZnCoAlO:H films with high spin polarization can be considered as sources of spin injection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balashov Yu. Yu., Myagkov V. G., Bykova L. E., Volochaev M. N., Zhigalov V. S., Matsynin A. A., Galushka K. A., Bondarenko G. N., Komogortsev S. V.
Заглавие : Features of the course of the solid-state reactions in a Sn/Fe/Cu trilayer film system
Колич.характеристики :5 с
Коллективы : Nanophysics & Nanoelectronics, International Symposium
Место публикации : Tech. Phys. - 2023. - Vol. 68, Is. 7. - P.940-944. - ISSN 10637842 (ISSN), DOI 10.61011/TP.2023.07.56642.73-23. - ISSN 10906525 (eISSN)
Примечания : Cited References: 18
Аннотация: Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Komogortsev S. V., Vazhenina I. G., Kleshnina S. A., Iskhakov R. S., Lepalovskij V. N., Pasynkova A. A., Svalov A. V.
Заглавие : Advanced characterization of FeNi-based films for the development of magnetic field sensors with tailored functional parameters
Место публикации : Sensors. - 2022. - Vol. 22, Is. 9. - Ст.3324. - ISSN 14248220 (ISSN), DOI 10.3390/s22093324
Примечания : Cited References: 35. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/en/project/22-29-00980/ (accessed on 20 March 2022)
Аннотация: Magnetometry and ferromagnetic resonance are used to quantitatively study magnetic anisotropy with an easy axis both in the film plane and perpendicular to it. In the study of single-layer and multilayer permalloy films, it is demonstrated that these methods make it possible not only to investigate the average field of perpendicular and in-plane anisotropy, but also to characterize their inhomogeneity. It is shown that the quantitative data from direct integral and local measurements of magnetic anisotropy are consistent with the direct and indirect estimates based on processing of the magnetization curves. The possibility of estimating the perpendicular magnetic anisotropy constant from the width of stripe domains in a film in the transcritical state is demonstrated. The average in-plane magnetic anisotropy field of permalloy films prepared by magnetron sputtering onto a Corning glass is almost unchanged with the thickness of a single-layer film. The inhomogeneity of the perpendicular anisotropy field for a 500 nm film is greater than that for a 100 nm film, and for a multilayer film with a total permalloy thickness of 500 nm, it is greater than that for a homogeneous film of the same thickness.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykova L. E., Zharkov S. M., Myagkov V. G., Balashov Yu. Yu., Patrin G. S.
Заглавие : Formation of the Cu6Sn5 intermetallics in Cu/Sn thin films
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 2. - P.33-37. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783422010048
Примечания : Cited References: 16. - The study was supported by the Russian Foundation for Basic Research, project no. 19-43-240003. The electron microscopy study was carried out at the Krasnoyarsk Regional Center for Collective Use of the Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences and at the Laboratory of Electron Microscopy of the Center for Collective Use of the Siberian Federal University within the state assignment of the Ministry of Science and Higher Education of the Russian Federation, research theme code FSRZ-2020-0011
Аннотация: The formation of the Cu6Sn5 intermetallic in Sn(55nm)/Cu(30nm) thin-film bilayers has been studied upon heating the film sample from room temperature to 300°C directly in a column of a transmission electron microscope in the electron diffraction mode with recording electron diffraction patterns. The thin films synthesized by the solid-state reaction have been found to be single-phase and consist of the η-Cu6Sn5 hexagonal phase (95‒260°C). It has been suggested basing on the effective interdiffusion coefficient (5 × 10‒16 m2/s) estimated in the course of the reaction that the main mechanism of the formation of the Cu6Sn5 thin films is diffusion along grain boundaries and dislocations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shvets P., Shabanov A. V., Maksimova K., Goikhman A.
Заглавие : Micro-Raman mapping of VO2 (T) microcrystals orientation
Место публикации : Vib. Spectrosc. - 2022. - Vol. 118. - Ст.103328. - ISSN 09242031 (ISSN), DOI 10.1016/j.vibspec.2021.103328
Примечания : Cited References: 38. - This work was prepared with support from Ministry of Science and Higher Education of the Russian Federation (project FZWM-2020-0008)
Аннотация: Microcrystals orientation distribution in triclinic vanadium dioxide VO2 (T) films was investigated by polarized Raman scattering with a resolution of few ?m and confirmed by electron backscatter diffraction. Euler angles used to describe the orientation of the crystal were determined by two different techniques and good agreement between the values was achieved. Finally, it was demonstrated that Raman scattering could be used to identify the direction of the lattice vector c for (002) crystals in consequence of the triclinic nature of VO2 (T)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhandun V. S., Draganyuk O. N.
Заглавие : The spin-state transition in ACo2O4 spinels (A = Be, Mg, Ca, Cd, Zn)
Место публикации : J. Magn. Magn. Mater. - 2022. - Vol. 552. - Ст.169206. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2022.169206
Примечания : Cited References: 51. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects № 19-42-240016: «Control of structural, magnetic, electronic, and optical properties by pressure and intercalation into functional compounds with a spinel structure containing 3d and 4f ions» and № 20-42-240004: “The effect of the composition, pressure, and dimension on the magnetic, electronic, optical, and elastic properties of the magnetic Mn+1AXn (M = Cr, Mn; Fe, A = Al, Ga, Si, Ge, P, In; X = C, N; n = 1-3) MAX-phases”. The calculations were performed with the computer resources of “Complex modeling and data processing research installations of mega-class” SRC “Kurchatovsky Institute” (http://ckp.urcki.ru)
Аннотация: The magnetic and electronic properties of the Co-based spinel oxides ACo2O4 (A = Be, Mg, Ca, Zn, Cd) were studied within GGA + U approach. It was found that the Co3+ ion is in a low-spin state due to the effect of the crystal field of octahedral symmetry. It is shown that Co3+ ion undergoes a spin-state transition into the high-spin state under the critical pressure of P = −10 GPa – −20 GPa. This pressure-induced spin-state transition is caused by the redistribution of electrons between the t2g- and eg-orbitals arising with increasing interatomic distances. The role of interatomic distances between Co3+ ion and its ligands is discussed. Thin-film form also favors the appearance of a high-spin state of Co3+ ion. At the same critical pressure, there is a sharp increase in the majority spin bandgap and a sharp decrease in the minority spin bandgap. These findings allow manipulating the spin state of Co3+ ions and bandgap width through the pressure or strain arising in thin films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykova L. E., Zharkov S. M., Myagkov V. G., Balashov Yu. Yu., Patrin G. S.
Заглавие : Formation of Cu6Sn5 intermetallic in Cu/Sn thin films
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 14. - P.2414-2418. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2022.14.54350.139. - ISSN 10906460 (eISSN)
Примечания : Cited References: 16. - This research was supported financially by the Russian Foundation for Basic Research (grant No. 19-43-240003). Electron microscopic studies were carried out at the Krasnoyarsk Regional Research Equipment Sharing Center of the Federal Research Center Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences and the Electron Microscopy Laboratory of the Research Equipment Sharing Center of the Siberian Federal University, supported under the state assignment of the Ministry of Science and Higher Education of the Russian Federation (scientific topic code FSRZ-2020-0011)
Аннотация: The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55 nm)/Cu(30 nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300oC and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Shanidze L. V., Rautskiy M. V., Mikhlin Yu. L., Lukyanenko A. V., Konovalov S. O., Zelenov F. V., Shvets P. V., Goikhman A. Yu., Volkov N. V., Tarasov A. S.
Заглавие : Titanium oxynitride thin films wide temperature range sensors
Место публикации : Tech. Phys. Lett. - 2022. - Vol. 48, Is. 10. - P.74-77. - ISSN 10637850 (ISSN), DOI 10.21883/TPL.2022.10.54805.19292. - ISSN 10906533 (eISSN)
Примечания : Cited References: 14. - This study was supported financially by the Russian Foundation for Basic Research, the Government of Krasnoyarsk Krai, and the Krasnoyarsk Krai Foundation of Science as part of scientific project No. 20-42-240013. The Rutherford backscattering study of samples was performed at Research and Education Center ” Functional Nanomaterials“ of the Baltic Federal University with financial support from the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Аннотация: The temperature dependence of the resistivity of titanium oxynitride TiNxOy thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40 nm thick TiN0.87O0.97 is presented.
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